FDB86366-F085 [ONSEMI]
N 沟道,PowerTrench® MOSFET,80V,110A,3.6mΩ;型号: | FDB86366-F085 |
厂家: | ONSEMI |
描述: | N 沟道,PowerTrench® MOSFET,80V,110A,3.6mΩ |
文件: | 总7页 (文件大小:535K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi
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liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,
regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
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Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
FDB86366-F085
®
N-Channel PowerTrench MOSFET
80 V, 110 A, 3.6 mΩ
Features
Typical R
= 2.8 mΩ at V = 10V, I = 80 A
GS D
DS(on)
D
D
Typical Q
= 86 nC at V = 10V, I = 80 A
g(tot)
GS
D
UIS Capability
RoHS Compliant
Qualified to AEC Q101
G
Applications
G
S
Automotive Engine Control
PowerTrain Management
Solenoid and Motor Drivers
Integrated Starter/Alternator
Primary Switch for 12V Systems
TO-263
FDB SERIES
S
MOSFET Maximum Ratings TJ = 25°C unless otherwise noted.
Symbol
VDSS
Parameter
Ratings
Units
Drain-to-Source Voltage
Gate-to-Source Voltage
80
±20
V
V
VGS
Drain Current - Continuous (VGS=10) (Note 1)
Pulsed Drain Current
TC = 25°C
TC = 25°C
110
ID
A
See Figure 4
178
EAS
PD
Single Pulse Avalanche Energy
(Note 2)
(Note 3)
mJ
W
W/oC
oC
oC/W
oC/W
Power Dissipation
Derate Above 25oC
176
1.2
TJ, TSTG Operating and Storage Temperature
-55 to + 175
0.85
RθJC
RθJA
Thermal Resistance, Junction to Case
Maximum Thermal Resistance, Junction to Ambient
43
Notes:
1: Current is limited by bondwire configuration.
2: Starting T = 25°C, L = 87uH, I = 64A, V = 80V during inductor charging and V = 0V during time in avalanche.
J
AS
DD
DD
3: R
is the sum of the junction-to-case and case-to-ambient thermal resistance, where the case thermal reference is defined as the solder
θJA
mounting surface of the drain pins.
presented here is based on mounting on a 1 in pad of 2oz copper.
R
is guaranteed by design, while R is determined by the board design. The maximum rating
θJC θJA
2
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FDB86366
FDB86366-F085
D2-PAK(TO-263)
330mm
24mm
800units
©2014Semiconductor Components Industries, LLC.
August-2017, Rev 3
Publication Order Number:
FDB86366-F085/D
Electrical Characteristics TJ = 25°C unless otherwise noted.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BVDSS
IDSS
Drain-to-Source Breakdown Voltage
Drain-to-Source Leakage Current
Gate-to-Source Leakage Current
ID = 250μA, VGS = 0V
80
-
-
-
-
-
-
1
V
V
DS= 8 0 V , T J = 25oC
μA
mA
nA
VGS = 0V
TJ = 175oC (Note 4)
-
1
IGSS
VGS = ±20V
-
±100
On Characteristics
VGS(th)
RDS(on)
Gate to Source Threshold Voltage
Drain to Source On Resistance
VGS = VDS, ID = 250μA
2.0
3.0
2.8
5.5
4.0
3.6
7.0
V
TJ = 25oC
-
-
mΩ
mΩ
ID = 80A,
TJ = 175oC (Note 4)
V
GS= 10V
Dynamic Characteristics
Ciss
Input Capacitance
-
-
-
-
-
-
-
-
6280
1010
32
-
pF
pF
pF
Ω
V
DS = 40V, VGS = 0V,
Coss
Crss
Rg
Output Capacitance
-
f = 1MHz
Reverse Transfer Capacitance
Gate Resistance
-
f = 1MHz
2.1
86
-
Qg(ToT)
Qg(th)
Qgs
Total Gate Charge
VGS = 0 to 10V
VGS = 0 to 2V
112
nC
nC
nC
nC
VDD = 64V
ID = 80A
Threshold Gate Charge
Gate-to-Source Gate Charge
Gate-to-Drain “Miller“ Charge
12
-
-
-
30
Qgd
18
Switching Characteristics
ton
td(on)
tr
Turn-On Time
Turn-On Delay
Rise Time
-
-
-
-
-
-
-
144
ns
ns
ns
ns
ns
ns
30
76
40
17
-
-
-
V
DD = 40V, ID = 80A,
VGS = 10V, RGEN = 6Ω
td(off)
tf
Turn-Off Delay
Fall Time
-
-
toff
Turn-Off Time
83
Drain-Source Diode Characteristics
I
SD =80A, VGS = 0V
-
-
-
-
-
1.25
1.2
V
VSD
Source-to-Drain Diode Voltage
ISD = 40A, VGS = 0V
-
V
trr
Reverse-Recovery Time
67
80
87
ns
nC
IF = 80A, dISD/dt = 100A/μs
VDD = 64V
Qrr
Reverse-Recovery Charge
104
Note:
4: The maximum value is specified by design at T = 175°C. Product is not tested to this condition in production.
J
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2
Typical Characteristics
1.2
1.0
0.8
0.6
0.4
0.2
0.0
200
150
100
50
CURRENT LIMITED
BY PACKAGE
VGS = 10V
CURRENT LIMITED
BY SILICON
0
0
25
50
75
100
125
150
175
25
50
75
100
125
150
175
200
TC, CASE TEMPERATURE(oC)
TC, CASE TEMPERATURE(oC)
Figure 2. Maximum Continuous Drain Current vs.
Case Temperature
Figure 1. Normalized Power Dissipation vs. Case
Temperature
2
DUTY CYCLE - DESCENDING ORDER
1
D = 0.50
0.20
P
0.10
DM
0.05
0.02
0.01
t
0.1
1
t
2
NOTES:
DUTY FACTOR: D = t /t
1
2
SINGLE PULSE
PEAK T = P
x Z
x R
+ T
J
DM
θJC
θJC C
0.01
10-5
10-4
10-3
10-2
10-1
100
101
t, RECTANGULAR PULSE DURATION(s)
Figure 3. Normalized Maximum Transient Thermal Impedance
10000
VGS = 10V
TC = 25oC
FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:
1000
100
10
175 - TC
I = I2
150
SINGLE PULSE
10-5
10-4
10-3
10-2
10-1
100
101
t, RECTANGULAR PULSE DURATION(s)
Figure 4. Peak Current Capability
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3
Typical Characteristics
500
100
1000
100
10
If R = 0
= (L)(I )/(1.3*RATED BV
t
AV
- V
)
AS
DSS
DD
If R
AV
≠ 0
t
= (L/R)ln[(I *R)/(1.3*RATED BV
- V ) +1]
DSS DD
AS
100us
STARTING TJ = 25oC
OPERATION IN THIS
AREA MAY BE
10
1
LIMITED BY R
DS(on)
1
SINGLE PULSE
TJ = MAX RATED
TC = 25oC
STARTING TJ = 150oC
1ms
10ms
100ms
0.1
0.001
0.01
0.1
1
10
100
1000
0.1
1
10
100 200
tAV, TIME IN AVALANCHE (ms)
VDS, DRAIN TO SOURCE VOLTAGE (V)
NOTE: Refer to ON Semiconductor Application Notes AN7514
and AN7515
Figure 5. Forward Bias Safe Operating Area
Figure 6. Unclamped Inductive Switching
Capability
300
300
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
VGS = 0 V
100
250
VDD = 5V
200
150
10
TJ = 175 o
C
TJ = 25 o
C
TJ = 175oC
100
1
TJ = 25oC
TJ = -55oC
50
0
0.1
2
3
4
5
6
7
8
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 7. Transfer Characteristics
Figure 8. Forward Diode Characteristics
300
250
200
150
100
50
300
80μs PULSE WIDTH
VGS
15V Top
10V
8V
7V
6V
T
= 175oC
80μs PULSE WIDTH
J
VGS
15V Top
10V
8V
7V
6V
T
J
= 25oC
250
200
150
100
50
5.5V
5V Bottom
5.5V
5V Bottom
5V
5V
0
0
0
1
2
3
4
5
0
1
2
3
4
5
VDS, DRAIN TO SOURCE VOLTAGE (V)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 9. Saturation Characteristics
Figure 10. Saturation Characteristics
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4
Typical Characteristics
50
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
ID = 80A
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
40
30
20
10
0
TJ = 25oC
TJ = 175oC
ID = 80A
VGS = 10V
4
5
6
7
8
9
10
-80
-40
0
40
80
120
160
200
TJ, JUNCTION TEMPERATURE(oC)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 11. RDSON vs. Gate Voltage
Figure 12. Normalized RDSON vs. Junction
Temperature
1.4
1.10
VGS = VDS
ID = 5mA
I
D
= 250μA
1.2
1.0
0.8
0.6
0.4
0.2
1.05
1.00
0.95
0.90
-80
-40
0
40
80
120
160
200
-80
-40
0
40
80
120
160
200
TJ, JUNCTION TEMPERATURE (oC)
TJ, JUNCTION TEMPERATURE(oC)
Figure 13. Normalized Gate Threshold Voltage vs.
Temperature
Figure 14. Normalized Drain to Source
Breakdown Voltage vs. Junction Temperature
100000
10
ID = 80A
VDD =32V
8
6
4
2
0
VDD = 40V
Ciss
10000
VDD = 48V
Coss
1000
100
f = 1MHz
VGS = 0V
Crss
10
0.1
1
10
100
0
15
30
45
60
75
90
Qg, GATE CHARGE(nC)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 15. Capacitance vs. Drain to Source
Voltage
Figure 16. Gate Charge vs. Gate to Source
Voltage
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5
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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