FDB8860-F085 [ONSEMI]
30 V、80 A、1.9 mΩ、D2PAK、逻辑电平N 沟道 PowerTrench®;
| 型号： | FDB8860-F085 |
| 厂家： | 
ONSEMI |
| 描述： | 30 V、80 A、1.9 mΩ、D2PAK、逻辑电平N 沟道 PowerTrench® 开关 晶体管 |
| 文件： | 总8页 (文件大小：311K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ON Semiconductor
Is Now
To learn more about onsemi™, please visit our website at
www.onsemi.com
onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi
product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without
notice. The information herein is provided “as-is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality,
or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all
liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,
regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
FDB8860-F085
®
N-Channel Logic Level PowerTrench MOSFET
30V, 80A, 2.6mꢀ
Features
Applications
12V Automotive Load Control
RDS(ON) = 1.9mꢀ (Typ), VGS = 5V, ID = 80A
Qg(5) = 89nC (Typ), VGS = 5V
Low Miller Charge
Start / Alternator Systems
Electronic Power Steering Systems
ABS
Low QRR Body Diode
UIS Capability (Single Pulse and Repetitive Pulse)
Qualified to AEC Q101
DC-DC Converters
RoHS Compliant
©2010 Semiconductor Components Industries, LLC.
September-2017,Rev1
Publication Order Number:
FDB8860-F085/D
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
VGS
Parameter
Ratings
30
Units
V
V
Drain to Source Voltage
Gate to Source Voltage
Drain Current
20
80
A
Continuous (VGS = 10V, TC < 163oC)
Continuous (VGS = 5V, TC < 162oC)
Continuous (VGS = 10V, TC = 25oC, with RꢃJA = 43oC/W)
Pulsed
80
31
Figure 4
9 4 7
A
A
ID
A
EAS
Si n g l e P u l s e A v a l a n c h e E n e r g y ( N o t e 1 )
mJ
W
W/oC
oC
Power Dissipation
Derate above 25oC
254
PD
1.7
TJ, TSTG
Operating and Storage Temperature
-55 to +175
Thermal Characteristics
RꢃJC
RꢃJA
RꢃJA
Thermal Resistance Junction to Case
0.59
62
oC/W
oC/W
oC/W
Thermal Resistance Junction to Ambient (Note 2)
Thermal Resistance Junction to Ambient TO-263,1in2 copper pad area
43
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FDB8860
TO-263AB
330mm
24mm
800units
FDB8860-F085
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
ID = 1mA, VGS = 0V
30
-
-
-
-
-
-
V
1
V
DS = 24V
IDSS
ꢁA
nA
VGS = 0V
TJ = 150°C
-
250
ꢂ100
IGSS
VGS = ꢂ20V
-
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VDS = VGS, ID = 250ꢁA
ID = 80A, VGS = 10V
ID = 80A, VGS = 5V
ID = 80A, VGS = 4.5V
1
-
1.7
1.6
1.9
2.1
3
V
2.3
2.6
2.7
-
RDS(ON)
Drain to Source On Resistance
mꢀ
-
ID = 80A, VGS = 10V,
TJ = 175°C
-
2.5
3.6
Dynamic Characteristics
CISS
COSS
CRSS
RG
Input Capacitance
-
-
-
-
-
-
-
-
-
-
9460 12585
pF
pF
pF
ꢀ
V
DS = 15V, VGS = 0V,
Output Capacitance
1710
1050
1.8
165
89
2275
f = 1MHz
Reverse Transfer Capacitance
Gate Resistance
1575
f = 1MHz
-
214
115
12
-
Qg(TOT)
Qg(5)
Qg(TH)
Qgs
Total Gate Charge at 10V
Total Gate Charge at 5V
Threshold Gate Charge
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
VGS = 0V to 10V
VGS = 0V to 5V
VGS = 0V to 1V
nC
nC
nC
nC
nC
nC
VDD = 15V
ID = 80A
Ig = 1.0mA
9.1
26
Qgs2
Qgd
18
-
33
-
www.onsemi.com
2
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Switching Characteristics
t(on)
td(on)
tr
Turn-On Time
-
-
-
-
-
-
-
14
213
79
49
-
340
ns
ns
ns
ns
ns
ns
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Turn-Off Time
-
-
VDD = 15V, ID = 80A
VGS = 5V, RGS = 1ꢀ
td(off)
tf
-
-
toff
192
Drain-Source Diode Characteristics
I
SD = 80A
-
-
-
-
-
-
-
-
1.25
1.0
43
V
V
VSD
Source to Drain Diode Voltage
ISD = 40A
trr
Reverse Recovery Time
Reverse Recovery Charge
ISD = 80A, dISD/dt = 100A/ꢁs
ISD = 80A, dISD/dt = 100A/ꢁs
ns
nC
Qrr
29
Notes:
o
1: Starting T = 25 C, L =0.47mH, I = 64A , V = 30V, V = 10V.
J
AS
DD
GS
2: Pulse width = 100s
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For
a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
All ON Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
certification.
www.onsemi.com
3
Typical Characteristics TJ = 25°C unless otherwise noted
1.2
1.0
0.8
0.6
0.4
0.2
0.0
300
225
150
75
VGS = 10V
CURRENT LIMITED
BY PACKAGE
VGS = 5V
0
25
50
75
100
125
150
175
0
25
50
75
100
125
150
175
o
TC, CASE TEMPERATURE( C)
o
TC, CASE TEMPERATURE ( C)
Figure 1. Normalized Power Dissipation vs Case
Temperature
Figure 2. Maximum Continuous Drain Current vs
Case Temperature
2
DUTY CYCLE-DESCENDING ORDER
1
D = 0.5
0.2
0.1
0.05
P
DM
0.02
0.01
0.1
t
1
t
2
NOTES:
DUTY FACTOR: D = t /t
SINGLE PULSE
1
2
PEAK T = P
x Z
x R
+ T
J
DM
ꢃJC
ꢃJC C
0.01
10-5
10-4
10-3
10-2
10-1
100
101
t, RECTANGULAR PULSE DURATION (s)
Figure 3. Normalized Maximum Transient Thermal Impedance
3000
o
T
= 25 C
C
FOR TEMPERATURES
o
ABOVE 25 C DERATE PEAK
1000
CURRENT AS FOLLOWS:
175 - T
150
C
I = I
25
100
50
SINGLE PULSE
10-5
10-4
10-3
10-2
t, PULSE WIDTH (s)
10-1
100
101
Figure 4. Peak Current Capability
www.onsemi.com
4
Typical Characteristics TJ = 25°C unless otherwise noted
1000
100
10
500
100
If R = 0
= (L)(I )/(1.3*RATED BV
10us
t
AV
- V
)
AS
DSS
DD
If Rꢄꢅ
0
t
= (L/R)ln[(I *R)/(1.3*RATED BV
- V ) +1]
DD
AV
AS
DSS
100us
o
STARTING T = 25 C
J
CURRENT LIMITED
BY PACKAGE
10
1
1ms
1
10ms
OPERATION IN THIS
AREA MAY BE
o
STARTING T = 150 C
J
SINGLE PULSE
TJ = MAX RATED
TC = 25oC
100ms
DC
LIMITED BY RDS(ON)
0.1
0.1
1
10
100
1000
10000
1
10
60
tAV, TIME IN AVALANCHE (ms)
VDS, DRAIN TO SOURCE VOLTAGE(V)
NOTE: Refer to ON Semiconductor Application Notes AN7514
and AN7515
Figure 5. Forward Bias Safe Operating Area
Figure 6. Unclamped Inductive Switching
Capability
160
120
VGS = 4V
PULSE DURATION = 80ꢁs
DUTY CYCLE = 0.5% MAX
VGS = 3V
100
VDD = 5V
VGS = 5V
120
80
40
0
VGS = 10V
80
TJ = 175oC
TJ = 25oC
60
40
TJ = -55oC
20
PULSE DURATION = 80ꢁs
DUTY CYCLE = 0.5% MAX
0
1.0
1.5
2.0
2.5
3.0
3.5
0.0
0.2
0.4
0.6
0.8
1.0
VGS, GATE TO SOURCE VOLTAGE (V)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Transfer Characteristics
Figure 8. Saturation Characteristics
4.0
3.5
1.6
PULSE DURATION = 80ꢁs
PULSE DURATION = 80ꢁs
ID = 40A
DUTY CYCLE = 0.5% MAX
DUTY CYCLE=0.5% MAX
1.4
1.2
1.0
0.8
0.6
3.0
2.5
2.0
1.5
TJ = 175oC
TJ = 25oC
ID = 80A
VGS = 10V
3
4
5
6
7
8
9
10
-80
-40
0
40
80
120
160
200
TJ, JUNCTION TEMPERATURE( OC)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 9. Drain to Source On-Resistance
Figure 10. Normalized Drain to Source On
Resistance vs Junction Temperature
Variation vsꢀꢀGate to Source Voltage
www.onsemi.com
5
Typical Characteristics TJ = 25°C unless otherwise noted
1.10
1.4
1.2
1.0
0.8
0.6
0.4
0.2
ID = 1mA
VGS = VDS
ID = 250ꢁA
1.05
1.00
0.95
0.90
0
40
80
120
160
200
-80
-40
-80
-40
0
40
80
120
160
200
o
o
TJ, JUNCTION TEMPERATURE( C)
TJ, JUNCTION TEMPERATURE( C)
Figure 11. Normalized Gate Threshold Voltage vs
Junction Temperature
Figure 12. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
10
20000
10000
VDD = 15V
Ciss
8
6
4
Coss
Crss
f = 1MHz
1000
2
ID = 80A
V
GS = 0V
ID = 1A
0
500
0.1
30
1
10
0
20 40 60 80 100 120 140 160 180
Qg, GATE CHARGE (nC)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 13. Capacitance vs Drain to Source
Voltage
Figure 14. Gate Charge vs Gate to Source Voltage
www.onsemi.com
6
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
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© Semiconductor Components Industries, LLC
www.onsemi.com
❖
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