FDB8860 [ONSEMI]

N 沟道，逻辑电平，PowerTrench® MOSFET，30V，80A，2.6mΩ;


型号：	FDB8860
厂家：	ONSEMI
描述：	N 沟道，逻辑电平，PowerTrench® MOSFET，30V，80A，2.6mΩ PC 开关晶体管
文件：	总9页 (文件大小：522K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Is Now Part of

To learn more about ON Semiconductor, please visit our website at

www.onsemi.com

Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers

will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor

product management systems do not have the ability to manage part nomenclature that utilizes an underscore

(_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain

device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated

device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please

email any questions regarding the system integration to Fairchild_questions@onsemi.com.

ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number

of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right

to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability

arising out of the application or use of any product or circuit, and speciﬁcally disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON

Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON

Semiconductor data sheets and/or speciﬁcations can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s

technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA

Class 3 medical devices or medical devices with a same or similar classiﬁcation in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended

or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its ofﬁcers, employees, subsidiaries, afﬁliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out

of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor

is an Equal Opportunity/Afﬁrmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

December 2010

FDB8860

N-Channel Logic Level PowerTrench MOSFET

30V, 80A, 2.6mΩ

Features

Applications

R_DS(ON)= 1.9mΩ (Typ), V_GS= 5V, I_D= 80A

DC-DC Converters

Q_g(5)= 89nC (Typ), V_GS= 5V

Low Miller Charge

Low Q_RRBody Diode

UIS Capability (Single Pulse and Repetitive Pulse)

RoHS Compliant

FDB8860 Rev A2

FDB8860 Rev.A2

www.fairchildsemi.com

MOSFET Maximum Ratings T_C= 25°C unless otherwise noted

Symbol

V_DSS

V_GS

Parameter

Ratings

Units

Drain to Source Voltage

Gate to Source Voltage

Drain Current

±20

Continuous (V_GS= 10V, T_C< 163^oC)

Continuous (V_GS= 5V, T_C< 162^oC)

Continuous (V_GS= 10V, T_C= 25^oC, with R_θJA= 43^oC/W)

Pulsed

I_D

Figure 4

9 4 7

E_AS

S i n g l e P u l s e A v a l a n c h e E n e r g y ( N o t e 1 )

Power Dissipation

Derate above 25^oC

254

P_D

1.7

W/^oC

^oC

T_J, T_STG

Operating and Storage Temperature

-55 to +175

Thermal Characteristics

R_θJC

R_θJA

Thermal Resistance Junction to Case

0.59

^oC/W

Thermal Resistance Junction to Ambient (Note 2)

Thermal Resistance Junction to Ambient TO-263,1in²copper pad area

Package Marking and Ordering Information

Device Marking

Device

Package

Reel Size

Tape Width

Quantity

800units

FDB8860

TO-263AB

330mm

24mm

Electrical Characteristics ^T_J^{= 25°C unless otherwise noted}

Symbol

Parameter

Test Conditions

Min

Typ

Max

Units

Off Characteristics

BV_DSS

Drain to Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate to Source Leakage Current

I_D= 1mA, V_GS= 0V

V_DS= 24V

I_DSS

μA

_GS= 0V

T_J= 150°C

250

±100

I_GSS

V_GS= ±20V

On Characteristics

V_GS(th)

Gate to Source Threshold Voltage

V_DS= V_GS, I_D= 250μA

I_D= 80A, V_GS= 10V

I_D= 80A, V_GS= 5V

I_D= 80A, V_GS= 4.5V

1.7

1.6

1.9

2.1

2.3

2.6

2.7

R_DS(ON)

Drain to Source On Resistance

mΩ

_D= 80A, V_GS= 10V,

2.5

3.6

T_J= 175°C

Dynamic Characteristics

C_ISS

C_OSS

C_RSS

R_G

Input Capacitance

9460 12585

V_DS= 15V, V_GS= 0V,

f = 1MHz

Output Capacitance

1710

1050

1.8

165

2275

Reverse Transfer Capacitance

Gate Resistance

1575

f = 1MHz

214

115

Q_g(TOT)

Q_g(5)

Q_g(TH)

Q_gs

Total Gate Charge at 10V

Total Gate Charge at 5V

Threshold Gate Charge

Gate to Source Gate Charge

Gate Charge Threshold to Plateau

Gate to Drain “Miller” Charge

V_GS= 0V to 10V

V_GS= 0V to 5V

V_DD= 15V

_D= 80A

I_g= 1.0mA

V_GS= 0V to 1V

9.1

Q_gs2

Q_gd

FDB8860 Rev.A2

www.fairchildsemi.com

Electrical Characteristics T_J= 25°C unless otherwise noted

Symbol

Parameter

Test Conditions

Min

Typ

Max

Units

Switching Characteristics

t_(on)

t_d(on)

t_r

Turn-On Time

213

340

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

Turn-Off Time

_DD= 15V, I_D= 80A

_GS= 5V, R_GS= 1Ω

t_d(off)

t_f

t_off

192

Drain-Source Diode Characteristics

_SD= 80A

1.25

1.0

V_SD

Source to Drain Diode Voltage

I_SD= 40A

t_rr

Reverse Recovery Time

Reverse Recovery Charge

I_SD= 80A, dI_SD/dt = 100A/μs

Q_rr

Notes:

1: Starting T = 25 C, L =0.47mH, I = 64A , V = 30V, V = 10V.

2: Pulse width = 100s

FDB8860 Rev.A2

www.fairchildsemi.com

Typical Characteristics T_J= 25°C unless otherwise noted

1.2

1.0

0.8

0.6

0.4

0.2

0.0

300

225

150

V_GS= 10V

CURRENT LIMITED

BY PACKAGE

V_GS= 5V

100

125

150

175

100

125

150

175

T_C, CASE TEMPERATURE(^oC)

T_C, CASE TEMPERATURE (^oC)

Figure 1. Normalized Power Dissipation vs Case

Temperature

Figure 2. Maximum Continuous Drain Current vs

Case Temperature

DUTY CYCLE-DESCENDING ORDER

D = 0.5

0.2

0.1

0.05

0.02

0.01

0.1

NOTES:

DUTY FACTOR: D = t /t

SINGLE PULSE

PEAK T = P

x Z

x R

+ T

θJC

θJC C

0.01

10^-5

10^-4

10^-3

10^-2

10^-1

10⁰

10¹

t, RECTANGULAR PULSE DURATION (s)

Figure 3. Normalized Maximum Transient Thermal Impedance

3000

= 25 C

FOR TEMPERATURES

ABOVE 25 C DERATE PEAK

1000

CURRENT AS FOLLOWS:

175 - T

150

I = I

100

SINGLE PULSE

10^-5

10^-4

10^-3

10^-2

t, PULSE WIDTH (s)

10^-1

10⁰

10¹

Figure 4. Peak Current Capability

FDB8860 Rev.A2

www.fairchildsemi.com

Typical Characteristics ^T_J^{= 25°C unless otherwise noted}

1000

100

500

100

If R = 0

= (L)(I )/(1.3*RATED BV

10us

- V

)

DSS

If R

≠ 0

= (L/R)ln[(I *R)/(1.3*RATED BV

- V ) +1]

DSS DD

100us

STARTING T = 25 C

CURRENT LIMITED

BY PACKAGE

1ms

10ms

OPERATION IN THIS

AREA MAY BE

STARTING T = 150 C

SINGLE PULSE

T_J= MAX RATED

T_C= 25^oC

100ms

LIMITED BY R_DS(ON)

0.1

100

1000

10000

t_AV, TIME IN AVALANCHE (ms)

V_DS, DRAIN TO SOURCE VOLTAGE(V)

NOTE: Refer to Fairchild Application Notes AN7514 and AN7515

Figure 6. Unclamped Inductive Switching

Capability

Figure 5. Forward Bias Safe Operating Area

160

120

V_GS= 4V

PULSE DURATION = 80μs

DUTY CYCLE = 0.5% MAX

V_GS= 3V

100

V_DD= 5V

120

V_GS= 5V

V_GS= 10V

T_J= 175^oC

T_J= 25^oC

T_J= -55^oC

PULSE DURATION = 80μs

DUTY CYCLE = 0.5% MAX

1.0

1.5

2.0

2.5

3.0

3.5

0.0

0.2

0.4

0.6

0.8

1.0

V_GS, GATE TO SOURCE VOLTAGE (V)

V_DS, DRAIN TO SOURCE VOLTAGE (V)

Figure 7. Transfer Characteristics

Figure 8. Saturation Characteristics

4.0

1.6

PULSE DURATION = 80μs

DUTY CYCLE = 0.5% MAX

PULSE DURATION = 80μs

DUTY CYCLE=0.5% MAX

I_D= 40A

3.5

3.0

2.5

2.0

1.5

1.4

1.2

1.0

0.8

0.6

T_J= 175^oC

T_J= 25^oC

ID = 80A

VGS = 10V

-80

-40

120

160

200

T_J, JUNCTION TEMPERATURE( ^OC)

V_GS, GATE TO SOURCE VOLTAGE (V)

Figure 9. Drain to Source On-Resistance

Variation vs Gate to Source Voltage

Figure 10. Normalized Drain to Source On

Resistance vs Junction Temperature

FDB8860 Rev.A2

www.fairchildsemi.com

Typical Characteristics T_J= 25°C unless otherwise noted

1.10

1.4

1.2

1.0

0.8

0.6

0.4

0.2

I_D= 1mA

V_GS= V_DS

I_D= 250μA

1.05

1.00

0.95

0.90

-80

-40

120

160

200

-80

-40

120

160

200

T_J, JUNCTION TEMPERATURE(^oC)

T_J, JUNCTION TEMPERATURE( C)

Figure 11. Normalized Gate Threshold Voltage vs

Junction Temperature

Figure 12. Normalized Drain to Source

Breakdown Voltage vs Junction Temperature

20000

10000

V_DD= 15V

C_iss

C_oss

C_rss

f = 1MHz

1000

I_D= 80A

_GS= 0V

I_D= 1A

500

0.1

20 40 60 80 100 120 140 160 180

Q_g, GATE CHARGE (nC)

V_DS, DRAIN TO SOURCE VOLTAGE (V)

Figure 13. Capacitance vs Drain to Source

Voltage

Figure 14. Gate Charge vs Gate to Source Voltage

FDB8860 Rev.A2

www.fairchildsemi.com

TRADEMARKS

The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not

intended to be an exhaustive list of all such trademarks.

AccuPower™

Auto-SPM™

F-PFS™

FRFET

PowerTrench

PowerXS™

The Power Franchise

The Right Technology for Your Success™

Build it Now™

CorePLUS™

Global Power Resource

Green FPS™

Programmable Active Droop™

QFET

CorePOWER™

CROSSVOLT™

CTL™

Green FPS™ e-Series™

Gmax™

GTO™

IntelliMAX™

ISOPLANAR™

MegaBuck™

MICROCOUPLER™

MicroFET™

QS™

TinyBoost™

TinyBuck™

TinyCalc™

Quiet Series™

RapidConfigure™

™

Current Transfer Logic™

TinyLogic

DEUXPEED

TINYOPTO™

TinyPower™

TinyPWM™

Dual Cool™

Saving our world, 1mW/W/kW at a time™

SignalWise™

SmartMax™

EcoSPARK

EfficentMax™

ESBC™

TinyWire™

MicroPak™

SMART START™

TriFault Detect™

TRUECURRENT™*

μSerDes™

MicroPak2™

MillerDrive™

MotionMax™

Motion-SPM™

OptiHiT™

SPM

STEALTH™

SuperFET

SuperSOT™-3

SuperSOT™-6

SuperSOT™-8

Fairchild

Fairchild Semiconductor

FACT Quiet Series™

UHC

OPTOLOGIC

FACT

FAST

Ultra FRFET™

UniFET™

VCX™

VisualMax™

XS™

OPTOPLANAR

SupreMOS

SyncFET™

Sync-Lock™

®*

FastvCore™

FETBench™

FlashWriter

FPS™

PDP SPM™

Power-SPM™

*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE

RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY

PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY

THEREIN, WHICH COVERS THESE PRODUCTS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE

EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used here in:

1. Life support devices or systems are devices or systems which, (a) are

intended for surgical implant into the body or (b) support or sustain life,

and (c) whose failure to perform when properly used in accordance with

instructions for use provided in the labeling, can be reasonably

expected to result in a significant injury of the user.

2. A critical component in any component of a life support, device, or

system whose failure to perform can be reasonably expected to cause

the failure of the life support device or system, or to affect its safety or

effectiveness.

ANTI-COUNTERFEITING POLICY

Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website,

www.Fairchildsemi.com, under Sales Support.

Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their

parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed

application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the

proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild

Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild

Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of

up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and

warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is

committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification

Product Status

Definition

Datasheet contains the design specifications for product development. Specifications

may change in any manner without notice.

Advance Information

Formative / In Design

Datasheet contains preliminary data; supplementary data will be published at a later

date. Fairchild Semiconductor reserves the right to make changes at any time without

notice to improve design.

Preliminary

First Production

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to

make changes at any time without notice to improve the design.

No Identification Needed

Obsolete

Full Production

Datasheet contains specifications on a product that is discontinued by Fairchild

Semiconductor. The datasheet is for reference information only.

Not In Production

Rev. I51

www.fairchildsemi.com

FDB8860 Rev.A2

ON Semiconductor and

are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.

ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent

coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.

ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,

regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or

specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer

application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not

designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification

in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized

application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and

expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such

claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This

literature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATION

LITERATURE FULFILLMENT:

N. American Technical Support: 800−282−9855 Toll Free

USA/Canada

Europe, Middle East and Africa Technical Support:

Phone: 421 33 790 2910

Japan Customer Focus Center

Phone: 81−3−5817−1050

ON Semiconductor Website: www.onsemi.com

Order Literature: http://www.onsemi.com/orderlit

Literature Distribution Center for ON Semiconductor

19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA

Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada

Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada

Email: orderlit@onsemi.com

For additional information, please contact your local

Sales Representative

www.onsemi.com

FDB8860 [ONSEMI]

相关型号：

SI9130DB

SI9135LG-T1

SI9135LG-T1-E3

SI9135_11

SI9136_11

SI9130CG-T1-E3

SI9130LG-T1-E3

SI9130_11

SI9137

SI9137DB

SI9137LG

SI9122E