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FDBL86066-F085 [ONSEMI]

N 沟道 PowerTrench® MOSFET，100 V，240 A，4.1 mΩ;
FDBL86066-F085
型号： FDBL86066-F085
厂家： ONSEMI    ONSEMI
描述：

N 沟道 PowerTrench® MOSFET，100 V，240 A，4.1 mΩ

PC
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FDBL86066-F085  
N‐Channel POWERTRENCH)  
MOSFET  
100 V, 240 A, 4.1 mW  
Features  
www.onsemi.com  
• Typical R  
• Typical Q  
= 3.3 mW at V = 10 V, I = 80 A  
GS D  
DS(on)  
= 47 nC at V = 10 V, I = 80 A  
g(tot)  
GS  
D
V
R
MAX  
I MAX  
D
• UIS Capability  
DSS  
DS(ON)  
• Qualified to AEC Q101  
100 V  
4.1 mW @ 10 V  
240 A  
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS  
Compliant  
D
Applications  
• Automotive Engine Control  
• PowerTrain Management  
• Solenoid and Motor Drivers  
• Electrical Power Steering  
• Integrated Starter/Alternator  
• Distributed Power Architectures and VRM  
• Primary Switch for 12 V Systems  
G
S
N-CHANNEL MOSFET  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
A
Symbol  
Parameter  
Drain-to-Source Voltage  
Gate-to-Source Voltage  
Value  
100  
20  
Unit  
V
V
DSS  
H−PSOF8L  
V
GS  
V
CASE 100CU  
I
D
Drain Current − Continuous,  
185  
A
(V = 10 V) T = 25°C (Note 1)  
GS  
C
MARKING DIAGRAM  
Pulsed Drain Current, T = 25°C  
(See Figure 4)  
93.6  
A
C
E
AS  
Single Pulse Avalanche Energy  
(Note 2)  
mJ  
P
Power Dissipation  
300  
2
W
W/°C  
°C  
D
$Y&Z&3&K  
FDBL  
86066  
Derate Above 25°C  
T , T  
Operating and Storage  
Temperature  
−55 to +175  
J
STG  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
1. Current is limited by silicon.  
$Y  
= ON Semiconductor Logo  
= Assembly Plant Code  
= Numeric Date Code  
= Lot Code  
&Z  
&3  
&K  
2. Starting T = 25°C, L = 30 mH, I = −79 A, V = 100 V during inductor  
J
AS  
DD  
charging and V = 0 V during time in avalanche.  
DD  
FDBL86066  
= Specific Device Code  
ORDERING INFORMATION  
See detailed ordering and shipping information on page 7 of  
this data sheet.  
© Semiconductor Components Industries, LLC, 2017  
1
Publication Order Number:  
January, 2018 − Rev. 2  
FDBL86066−F085/D  
 
FDBL86066−F085  
THERMAL CHARACTERISTICS  
Symbol  
Parameter  
Value  
0.5  
Unit  
Thermal Resistance, Junction to Case  
Thermal Resistance, Junction to Ambient (Note 3)  
°C/W  
R
q
q
JC  
R
43  
JA  
3. R  
is the sum of the junction-to-case and case-to-ambient thermal resistance, where the case thermal reference is defined as the solder  
q
JA  
mounting surface of the drain pins. R  
presented here is based on mounting on a 1 in pad of 2oz copper.  
is guaranteed by design, while R  
is determined by the board design. The maximum rating  
q
q
JC  
JA  
2
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
J
Symbol  
Parameter  
Test Condition  
Min  
Typ  
Max  
Unit  
OFF CHARACTERISTICS  
BV  
Drain-to-Source Breakdown Voltage  
Drain-to-Source Leakage Current  
I
= 250 mA, V = 0 V  
100  
−
−
V
DSS  
D
GS  
I
V
= 100 V, V = 0 V  
mA  
DSS  
DS  
GS  
T = 25°C  
J
−
−
−
−
1
1
J
T = 175°C (Note 4)  
I
Gate-to-Source Leakage Current  
V
GS  
=
20 V  
−
−
100  
nA  
GSS  
ON CHARACTERISTICS  
V
Gate to Source Threshold Voltage  
Static Drain to Source On Resistance  
V
V
= V , I = 250 mA  
2
2.9  
4.0  
V
GS(th)  
DS(on)  
GS  
DS  
D
R
= 10 V, I = 80 A  
mW  
GS  
D
T = 25°C  
J
−
−
3.3  
7.3  
4.1  
8.8  
J
T = 175°C (Note 4)  
DYNAMIC CHARACTERISTICS  
C
Input Capacitance  
V
= 50 V, V = 0 V, f = 1 MHz  
−
−
−
−
−
−
−
−
3240  
1950  
26  
−
−
pF  
pF  
pF  
W
iss  
DS  
GS  
C
Output Capacitance  
oss  
C
Reverse Transfer Capacitance  
Gate Resistance  
−
rss  
R
V
GS  
V
GS  
V
GS  
V
DD  
V
DD  
= 0.5 V, f = 1 MHz  
0.5  
47  
−
g
Q
Total Gate Charge  
= 0 V to 10 V, V = 50 V, I = 80 A  
69  
−
nC  
nC  
nC  
nC  
g(tot)  
DD  
D
Q
Threshold Gate Charge  
Gate to Source Charge  
Gate to Drain “Miller” Charge  
= 0 V to 2 V, V = 50 V, I = 80 A  
6
g(th)  
DD  
D
Q
= 50 V, I = 80 A  
15  
−
gs  
gd  
D
Q
= 50 V, I = 80 A  
10  
−
D
SWITCHING CHARACTERISTICS  
t
Turn-On Time  
Turn-On Delay  
Rise Time  
V
R
= 50 V, I = 80 A, V = 10 V,  
−
−
−
−
−
−
−
18  
9
35  
−
ns  
ns  
ns  
ns  
ns  
ns  
on  
DD  
D
GS  
= 6 W  
GEN  
t
d(on)  
t
r
−
t
Turn-Off Delay  
Fall Time  
36  
13  
−
−
d(off)  
t
f
−
t
Turn-Off Time  
68  
off  
DRAIN-SOURCE DIODE CHARACTERISTICS  
V
Source to Drain Diode Forward  
Voltage  
I
I
= 80 A, V = 0 V  
−
−
−
−
−
−
0.9  
0.85  
36  
1.25  
1.2  
54  
V
SD  
SD  
GS  
= 40 A, V = 0 V  
SD  
GS  
t
Reverse Recovery Time  
Reverse Recovery Charge  
Reverse Recovery Time  
Reverse Recovery Charge  
I = 80 A, dI /dt = 300 A/ms  
F
ns  
nC  
ns  
rr  
SD  
Q
84  
126  
48  
rr  
t
I = 80 A, dI /dt = 1000 A/ms  
F
32  
rr  
SD  
Q
243  
365  
nC  
rr  
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product  
performance may not be indicated by the Electrical Characteristics if operated under different conditions.  
4. The maximum value is specified by design at T = 175°C. Product is not tested to this condition in production.  
J
www.onsemi.com  
2
 
FDBL86066−F085  
TYPICAL CHARACTERISTICS  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
200  
160  
120  
80  
CURRENT LIMITED  
BY SILICON  
VGS = 10 V  
40  
0
0
25  
50  
75  
100  
125 150  
175  
25  
50  
75  
100  
125  
150  
175  
TC, CASE TEMPERATURE(oC)  
TC, CASE TEMPERATURE(oC)  
Figure 1. Normalized Power Dissipation vs. Case  
Temperature  
Figure 2. Maximum Continuous Drain Current vs.  
Case Temperature  
2
DUTY CYCLE − DESCENDING ORDER  
1
D = 0.50  
0.20  
P
DM  
0.10  
0.05  
0.02  
0.01  
t
1
0.1  
t
2
NOTES:  
DUTY FACTOR: D = t /t  
1
2
SINGLE PULSE  
PEAK T = P x Z  
x R  
+ T  
J
DM  
qJC  
qJC C  
0.01  
100  
101  
10−5  
10−4  
10−3  
10−2  
10−1  
t, RECTANGULAR PULSE DURATION(s)  
Figure 3. Normalized Maximum Transient Thermal Impedance  
1000  
100  
10  
VGS = 10 V  
o
T
= 25  
C
C
FOR TEMPERATURES  
o
ABOVE 25 C DERATE PEAK  
CURRENT AS FOLLOWS:  
175 − T  
150  
C
I = I  
25  
SINGLE PULSE  
10−5  
10−4  
10−3  
10−2  
10−1  
100  
101  
t, RECTANGULAR PULSE DURATION(s)  
Figure 4. Peak Current Capability  
www.onsemi.com  
3
FDBL86066−F085  
TYPICAL CHARACTERISTICS  
1000  
100  
10  
1000  
If R = 0  
tAV = (L)(I AS )/(1.3*RATED BV DSS − VDD  
)
0
If R  
0
tAV = (L/R)ln[(I AS *R)/(1.3*RATED BV DSS − VDD) +1]  
100  
100us  
STARTING T = 25oC  
J
OPERATION IN THIS  
AREA MAY BE  
LIMITED BY r  
DS(on)  
10  
1
SINGLE PULSE  
1ms  
STARTING TJ = 150oC  
T
J
= MAX RATED  
10ms  
100ms  
o
T
C
= 25  
C
0.1  
1
0.0001 0.001 0.01 0.1  
1
10  
100 300  
1
10  
100 1000  
tAV, TIME IN AVALANCHE (ms)  
VDS, DRAIN TO SOURCE VOLTAGE (V)  
Figure 5. Forward Bias Safe Operating Area  
Figure 6. Unclamped Inductive Switching Capability  
240  
300  
PULSE DURATION = 250 ms  
DUTY CYCLE = 0.5% MAX  
VGS = 0 V  
100  
200  
V
DD  
= 10 V  
10  
1
TJ = 175 o  
C
160  
120  
80  
40  
0
TJ = 25 o  
C
T
J = 175oC  
0.1  
T
J = 25oC  
0.01  
0.001  
TJ = −55oC  
TJ = −55oC  
1
2
3
4
5
6
7
0.0  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
VSD, BODY DIODE FORWARD VOLTAGE (V)  
VGS, GATE TO SOURCE VOLTAGE (V)  
Figure 7. Transfer Characteristics  
Figure 8. Forward Diode Characteristics  
300  
200  
100  
0
300  
VGS  
15V Top  
10V  
250 ms PULSE WIDTH  
Tj=25oC  
VGS  
15V Top  
8V  
240  
10V  
8V  
7V  
6V  
5.5V  
5V Bottom  
7V  
6V  
5.5V  
5V Bottom  
180  
120  
60  
250 ms PULSE WIDTH  
Tj=175oC  
0
0
1
2
3
4
5
0
1
2
3
4
5
VDS, DRAIN TO SOURCE VOLTAGE (V)  
VDS, DRAIN TO SOURCE VOLTAGE (V)  
Figure 9. Saturation Characteristics  
Figure 10. Saturation Characteristics  
www.onsemi.com  
4
FDBL86066−F085  
TYPICAL CHARACTERISTICS  
30  
25  
20  
15  
10  
5
2.8  
PULSE DURATION = 250 ms  
DUTY CYCLE = 0.5% MAX  
ID = 80 A  
PULSE DURATION = 250 ms  
DUTY CYCLE = 0.5% MAX  
2.4  
2.0  
1.6  
1.2  
0.8  
0.4  
ID = 80 A  
VGS = 10 V  
T
J = 175oC  
TJ = 25oC  
6
0
4
5
7
8
9
10  
−80 −40  
0
40  
80  
120 160  
200  
TJ, JUNCTION TEMPERATURE ( oC)  
VGS, GATE TO SOURCE VOLTAGE (V)  
Figure 11. RDS(on) vs. Gate Voltage  
Figure 12. Normalized RDS(on) vs. Junction  
Temperature  
1.2  
1.10  
VGS = VDS  
ID = 1 mA  
I
D
= 250 mA  
1.0  
0.8  
0.6  
0.4  
1.05  
1.00  
0.95  
0.90  
−80 −40  
0
40  
80  
120 160  
200  
−80 −40  
0
40  
80  
120 160  
200  
TJ, JUNCTION TEMPERATURE ( oC)  
TJ, JUNCTION TEMPERATURE ( oC)  
Figure 13. Normalized Gate Threshold Voltage  
vs. Temperature  
Figure 14. Normalized Drain to Source  
Breakdown Voltage vs. Junction Temperature  
10000  
10  
ID = 80 A  
Ciss  
VDD = 50 V  
8
1000  
Coss  
VDD = 40 V  
VDD = 60 V  
6
4
2
0
100  
10  
f = 1 MHz  
GS = 0 V  
Crss  
V
1
0.1  
1
10  
100  
0
10  
20  
30  
40  
50  
V
DS, DRAIN TO SOURCE VOLTAGE (V)  
Qg, GATE CHARGE(nC)  
Figure 15. Capacitance vs. Drain to Source  
Voltage  
Figure 16. Gate Charge vs. Gate to Source  
Voltage  
POWERTRENCH is registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other  
countries.  
www.onsemi.com  
5
FDBL86066−F085  
PACKAGE MARKING AND ORDERING INFORMATION  
Device  
Marking  
Package  
Reel Size  
Tape Width  
Quantity  
FDBL86066−F085  
FDBL86066  
H−PSOF8L  
(Pb-Free / Halogen Free)  
13″  
24 mm  
2000 Units  
www.onsemi.com  
6
MECHANICAL CASE OUTLINE  
PACKAGE DIMENSIONS  
H−PSOF8L 11.68x9.80  
CASE 100CU  
ISSUE C  
DATE 22 MAY 2023  
GENERIC  
MARKING DIAGRAM*  
AYWWZZ  
XXXXXXXX  
XXXXXXXX  
A
Y
= Assembly Location  
= Year  
*This information is generic. Please refer to  
device data sheet for actual part marking.  
Pb−Free indicator, “G” or microdot “G”, may  
or may not be present. Some products may  
not follow the Generic Marking.  
WW = Work Week  
ZZ  
XXXX = Specific Device Code  
= Assembly Lot Code  
Electronic versions are uncontrolled except when accessed directly from the Document Repository.  
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.  
DOCUMENT NUMBER:  
DESCRIPTION:  
98AON13813G  
H−PSOF8L 11.68x9.80  
PAGE 1 OF 1  
onsemi and  
are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves  
the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular  
purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation  
special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.  
© Semiconductor Components Industries, LLC, 2019  
www.onsemi.com  
onsemi,  
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates  
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.  
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any  
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the  
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use  
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products  
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information  
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may  
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license  
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems  
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should  
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,  
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death  
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal  
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.  
ADDITIONAL INFORMATION  
TECHNICAL PUBLICATIONS:  
Technical Library: www.onsemi.com/design/resources/technical−documentation  
onsemi Website: www.onsemi.com  
ONLINE SUPPORT: www.onsemi.com/support  
For additional information, please contact your local Sales Representative at  
www.onsemi.com/support/sales  

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