FDBL9406-F085T6 [ONSEMI]
Power MOSFET, Single N-Channel, TOLL, 40 V, 1.21 mΩ, 259 A;
| 型号： | FDBL9406-F085T6 |
| 厂家： | 
ONSEMI |
| 描述： | Power MOSFET, Single N-Channel, TOLL, 40 V, 1.21 mΩ, 259 A |
| 文件： | 总7页 (文件大小：517K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MOSFET - Power, Single
N-Channel, TOLL
40 V, 1.21 mW, 240 A
FDBL9406-F085T6
Features
• Low R
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to Minimize Conduction Losses
DS(on)
• Low Q and Capacitance to Minimize Driver Losses
G
• Lowers Switching Noise/EMI
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
• AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
40 V
1.21 mW @ 10 V
240 A
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
D (9)
J
Parameter
Drain−to−Source Voltage
Symbol
Value
40
Unit
V
V
DSS
Gate−to−Source Voltage
V
+20/−16
240
V
GS
Continuous Drain
T
= 25°C
= 100°C
= 25°C
I
A
G (1)
C
D
Current R
(Note 2)
q
JC
T
C
179.4
136.4
68.2
45
Steady
State
Power Dissipation
(Note 2)
T
C
P
W
A
D
R
q
JC
S (2 − 8)
T
C
= 100°C
Continuous Drain
Current R
T = 25°C
A
I
D
q
JA
T = 100°C
A
31.8
4.3
(Notes 1, 2)
Steady
State
Power Dissipation
T = 25°C
A
P
W
D
R
(Notes 1, 2)
q
JA
T = 100°C
A
2.1
Pulsed Drain Current
T = 25°C, t = 10 ms
I
DM
2817
A
A
p
Operating Junction and Storage Temperature
Range
T , T
−55 to
+175
°C
J
stg
H−PSOF8L
CASE 100CU
Source Current (Body Diode)
I
221
271
A
S
Single Pulse Drain−to−Source Avalanche
E
AS
mJ
Energy (I
= 42.5 A)
L(pk)
ORDERING INFORMATION
Lead Temperature Soldering Reflow for Solder-
ing Purposes (1/8″ from case for 10 s)
T
L
260
°C
†
Device
Package
Shipping
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
FDBL9406−F085T6 H−PSOF8L 2000 / Tape &
(Pb−Free) Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Value
1.1
Unit
Junction−to−Case − Steady State (Note 2)
Junction−to−Ambient − Steady State (Note 2)
R
°C/W
q
JC
R
35
q
JA
2
1. Surface−mounted on FR4 board using a 1 in pad size, 1 oz. Cu pad.
2. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
© Semiconductor Components Industries, LLC, 2019
1
Publication Order Number:
June, 2020 − Rev. 0
FDBL9406−F085T6/D
FDBL9406−F085T6
Table 1. ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Parameter
OFF CHARACTERISTICS
Symbol
Test Conditions
Min
Typ
Max
Units
Drain−to−Source Breakdown Voltage
V
I
I
= 250 mA, V = 0 V
40
V
(BR)DSS
D
GS
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/T
= 250 mA, V = 0 V
24.9
mV/°C
(BR)DSS
J
D
GS
V
DS
= 40 V, V = 0 V
T = 25°C
10
mA
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
I
GS
J
DSS
I
V
DS
= 0 V, V = +20/−16 V
100
nA
GSS
GS
V
GS(th)
V
GS
= V , I = 190 mA
2
2.8
−6.9
1.1
3.5
V
mV/°C
mW
S
DS
D
Negative Threshold Temperature Coefficient
Drain−to−Source On Resistance
Forward Transconductance
CHARGES & CAPACTIANCES
Input Capacitance
V
/T
GS(th)
J
R
V
GS
= 10 V, I = 50 A
1.21
DS(on)
D
g
V
DS
= 15 V, I = 50 A
143
FS
D
C
V
GS
= 0 V, V = 25 V, f = 1 MHz
4960
2800
62
pF
pF
pF
nC
nC
nC
nC
iss
DS
Output Capacitance
C
oss
Reverse Transfer Capacitance
Total Gate Charge
C
rss
Q
V
GS
= 10 V, V = 20 V,
75
G(tot)
DS
I
= 50 A
D
Threshold Gate Charge
Q
9
G(th)
Gate−to−Source Charge
Q
22
gs
Gate−to−Drain Charge
Q
16
gd
SWITCHING CHARACTERISTICS, V = 10 V (Note 3)
GS
Turn−On Delay Time
Rise Time
t
V
= 10 V, V = 20 V,
27
44
61
26
ns
ns
ns
ns
d(on)
GS
D
DS
I
= 50 A, R = 6 W
G
t
r
Turn−Off Delay Time
Fall Time
t
d(off)
t
f
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
I
= 50 A, V = 0 V
T = 25°C
0.8
0.6
78
1.2
V
V
SD
S
GS
J
I
S
= 50 A, V = 0 V
T = 125°C
J
GS
Reverse Recovery Time
Charge Time
t
ns
ns
ns
nC
V
GS
= 0 V, dI /d = 100 A/ms,
S t
rr
I
= 50 A
S
t
39
a
Discharge Time
t
39
b
Reverse Recovery Charge
Q
101
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Switching characteristics are independent of operating junction temperatures
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2
FDBL9406−F085T6
TYPICAL CHARACTERISTICS
600
500
400
300
200
100
0
600
8.0 V
V
= 10 V
GS
V
DS
= 5 V
7.0 V
500
400
300
200
9.0 V
6.0 V
5.0 V
T = 25°C
J
100
0
T = 175°C
J
T = −55°C
J
0
0.5
1.0
1.5
2.0
2
3
4
5
6
7
8
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
2.5
2.0
1.5
10
8
I
D
= 50 A
T = 25°C
J
V
GS
= 6 V
6
4
V
GS
= 10 V
T = 175°C
J
1.0
0.5
2
0
T = 25°C
J
3
4
5
6
7
8
9
10
10 20
30
40
50
60
70
80
90 100
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 3. On−Resistance vs. Gate−to−Source
Figure 4. On−Resistance vs. Drain Current and
Voltage
Gate Voltage
2.0
1.8
1.6
1.4
1.2
1000
100
10
V
= 10 V
= 50 A
GS
T = 175°C
J
I
D
T = 150°C
J
T = 125°C
J
T = 85°C
J
1
0.1
1.0
0.8
0.6
T = 25°C
J
0.01
0.001
−75 −50 −25
0
25 50 75 100 125 150 175 200
5
10
V
15
20
25
30
35
40
T , JUNCTION TEMPERATURE (°C)
J
, DRAIN−TO−SOURCE VOLTAGE (V)
DS
Figure 5. On−Resistance Variation with
Figure 6. Drain−to−Source Leakage Current
Temperature
vs. Voltage
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3
FDBL9406−F085T6
TYPICAL CHARACTERISTICS
10K
1K
10
C
Q
ISS
G(tot)
9
C
OSS
RSS
8
7
6
5
Q
Q
GD
GS
100
4
3
2
1
0
C
10
1
V
DS
= 20 V
V
= 0 V
GS
T = 25°C
J
f = 1 MHz
I
D
= 50 A
0.1
1
10
100
0
20
40
60
80
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q , TOTAL GATE CHARGE (nC)
G
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source Voltage vs. Total
Charge
300
100
1000
100
10
V
= 0 V
GS
V
V
= 10 V
= 20 V
= 50 A
GS
DS
I
D
10
1
0.1
t
t
T = 175°C
J
d(off)
t
r
0.01
d(on)
T = 25°C
J
T = −55°C
J
t
f
0.001
1
10
R , GATE RESISTANCE (W)
100
0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
G
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
400
100
6000
1000
10 ms
T
= 25°C
J(initial)
100
10
100 ms
Operation in
this area may
be limited
10
1
T
= 150°C
J(initial)
1 ms
R
Limit
10 ms
DS(on)
1
Thermal Limit
Package Limit
0.1
0.1
1
10
100
0.001 0.01
0.1
1
10
100
1000
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
t , TIME IN AVALANCHE (S)
AV
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Drain Current vs. Time in
Avalanche
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4
FDBL9406−F085T6
TYPICAL CHARACTERISTICS
200
150
100
T = 25°C
J
50
0
0
10
20
30
40
50
I , DRAIN−TO−SOURCE CURRENT (A)
D
Figure 13. GFS vs. ID
2
1
50% Duty Cycle
20%
10%
5%
0.1
2%
1%
0.01
Single Pulse
0.000001
0.001
0.00001
0.0001
0.001
0.01
0.1
1
t, RECTANGULAR PULSE DURATION (s)
Figure 14. Thermal Response
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5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
H−PSOF8L 11.68x9.80
CASE 100CU
ISSUE C
DATE 22 MAY 2023
GENERIC
MARKING DIAGRAM*
AYWWZZ
XXXXXXXX
XXXXXXXX
A
Y
= Assembly Location
= Year
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
WW = Work Week
ZZ
XXXX = Specific Device Code
= Assembly Lot Code
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13813G
H−PSOF8L 11.68x9.80
PAGE 1 OF 1
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