FDC2512 [ONSEMI]
N 沟道，PowerTrench® MOSFET，150V，1.4A，425mΩ;
| 型号： | FDC2512 |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道，PowerTrench® MOSFET，150V，1.4A，425mΩ PC 开关 光电二极管 晶体管 |
| 文件： | 总7页 (文件大小：351K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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MOSFET – N-Channel,
POWERTRENCH)
V
R
MAX
I MAX
D
DSS
DS(ON)
150 V
425 mW @ 10 V
475 mW @ 6 V
1.4 A
150 V
S
D
FDC2512
D
G
D
General Description
D
This N−Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using either
synchronous or conventional switching PWM controllers. It has been
TSOT23 6−Lead
(SUPERSOTt−6)
CASE 419BL
optimized for low gate charge, low R
and fast switching speed.
DS(ON)
MARKING DIAGRAM
Features
• 1.4 A, 150 V.
R
R
= 425 mW @ V = 10 V
GS
DS(ON)
= 475 mW @ V = 6 V
DS(ON)
GS
252 MG
• High Performance Trench Technology for Extremely Low R
• Low Gate Charge (8 nC Typ)
G
DS(ON)
• High Power and Current Handling Capability
• Fast Switching Speed
252
M
G
= Specific Device Code
= Date Code
= Pb−Free Package
• This is a Pb−Free and Halide Free Device
(Note: Microdot may be in either location)
Applications
• DC/DC Converter
PIN ASSIGNMENT
ABSOLUTE MAXIMUM RATINGS T = 25°C unless otherwise noted
A
1
2
3
6
5
4
Symbol
Parameter
Drain−Source Voltage
Gate−Source Voltage
Value
150
20
Unit
V
V
DSS
GSS
V
V
I
D
Drain Current
A
−Continuous (Note 1a.)
1.4
8
−Pulsed
E
Single Pulse Avalanche Energy
(Note 3)
13.5
mJ
W
ORDERING INFORMATION
AS
†
Device
Package
Shipping
3000 /
Tape & Reel
P
Maximum Power Dissipation
(Note 1a.)
D
1.6
0.8
TSOT−23−6
(SUPERSOTt−6)
(Pb−Free)
FDC2512
(Note 1b.)
T , T
Operating and Storage Junction
Temperature Range
−55 to
+150
°C
J
STG
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Symbol
Parameter
Value
Unit
R
Thermal Resistance,
Junction−to−Ambient (Note 1a.)
78
°C/W
q
JA
R
Thermal Resistance,
Junction−to−Case (Note 1)
30
°C/W
q
JC
© Semiconductor Components Industries, LLC, 2017
1
Publication Order Number:
April, 2022 − Rev. 2
FDC2512/D
FDC2512
ELECTRICAL CHARACTERISTICS T = 25°C unless otherwise noted
A
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
BV
Drain–Source Breakdown Voltage
V
I
= 0 V, I = 250 mA
150
−
−
−
V
DSS
GS
D
Breakdown Voltage Temperature
Coefficient
= 250 mA, Referenced to 25°C
−
147
mV/°C
DBVDSS
DTJ
D
I
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
V
DS
V
GS
V
GS
= 120 V, V = 0 V
−
−
−
−
−
−
1
mA
nA
nA
DSS
GS
I
= 20 V, V = 0 V
100
−100
GSSF
GSSR
DS
I
= −20 V, V = 0 V
DS
ON CHARACTERISTICS (Note 2)
V
Gate Threshold Voltage
V
I
= V , I = 250 mA
2
2.6
4
V
GS(th)
DS
GS
D
Gate Threshold Voltage Temperature
Coefficient
= 250 mA, Referenced to 25°C
−
−5.6
−
mV/°C
DVGS(th)
DTJ
D
R
Static Drain–Source On–Resistance
V
GS
V
GS
V
GS
= 10 V, I = 1.4 A
−
−
−
319
332
624
425
475
875
mW
DS(on)
D
= 6.0 V, I = 1.3 A
D
= 10 V, I = 1.4 A, T = 125°C
D
J
I
On–State Drain Current
V
GS
V
DS
= 10 V, V = 5 V
4
−
−
−
A
S
D(on)
DS
g
FS
Forward Transconductance
= 10 V, I = 1.4 A
−
4
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
DS
= 75 V, V = 0 V, f = 1.0 MHz
−
−
344
22
9
−
−
pF
pF
pF
W
iss
GS
C
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
oss
C
−
−
rss
R
0.1
1.4
3.0
g
SWITCHING CHARACTERISTICS (Note 2)
t
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
V
V
= 75 V, I = 1 A,
−
−
−
−
−
−
−
6.5
3.5
22
4
13
7
ns
ns
d(on)
DD
GS
D
= 10 V, R
= 6 W
GEN
t
r
t
33
8
ns
d(off)
t
f
ns
Q
V
DS
V
GS
= 75 V, I = 1.4 A,
8
11
−
nC
nC
nC
g
D
= 10 V
Q
1.5
2.3
gs
gd
Q
−
DRAIN−SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Maximum Continuous Drain–Source Diode Forward Current
I
S
−
−
−
−
−
1.3
1.2
−
A
V
V
SD
Drain–Source Diode Forward Voltage
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
V
GS
= 0 V, I = 1.3 A (Note 2)
0.8
S
t
rr
I = 1.4 A, d /dt = 300 A/ms (Note 2)
45.8
119
ns
nC
F
iF
Q
−
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
NOTES:
1. R
is the sum of the junction−to−case and case−to−ambient thermal resistance where the case thermal reference is defined as the solder
q
JA
mounting surface of the drain pins. R
is guaranteed by design while R
is determined by the user’s board design.
q
q
JC
CA
a. 78°C/W when mounted
b. 156°C/W when mounted
on a minimum pad of 2 oz copper
2
on a 1 in pad of 2 oz copper
2. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%.
3. E of 13.5 mJ is based on starting T = 25°C, N−ch: L = 3 mH, I = 3 A, V = 150 V, V = 10 V.
AS
J
AS
DD
GS
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2
FDC2512
TYPICAL CHARACTERISTICS
6
4
1.4
1.3
V
= 10 V
GS
4.5 V
6.0 V
4.0 V
V
GS
= 4.0 V
1.2
1.1
1
4.5 V
5.0 V
6.0 V
2
0
10 V
0.9
1
8
0
3
0
2
I , Drain Current (A)
3
4
10
1.2
2
4
6
0
V
, Drain−Source Voltage (V)
D
DS
Figure 1. On−Region Characteristics
Figure 2. On−Resistance Variation with Drain
Current and Gate Voltage
2.2
1.8
1.4
1
0.8
0.7
I
D
= 0.7 A
I
V
= 1.4 A
D
= 10 V
GS
0.6
0.5
0.4
0.3
0.2
T = 125°C
A
0.6
0.2
T = 25°C
A
−50
−25
0
25
50
75
100
125
150
4
5
6
7
8
9
V
GS
, Gate to Source Voltage (V)
T , Junction Temperature (5C)
J
Figure 3. On−Resistance Variation with Temperature
Figure 4. On−Resistance Variation
with Gate−to−Source Voltage
8
10
1
V
GS
= 0 V
T = −55°C
A
25°C
V
= 25 V
DS
125°C
6
4
T = 125°C
A
0.1
25°C
0.01
−55°C
2
0
0.001
0.0001
4
0.2
0.4
0.6
0.8
1
2
3
5
6
V
GS
, Gate to Source Voltage (V)
V
SD
, Body Diode Forward Voltage (V)
Figure 5. Transfer Characteristics
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature
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3
FDC2512
TYPICAL ELECTRICAL CHARACTERISTICS (continued)
5
4
500
f = 1 MHz
= 0 V
I
D
= 1.4 A
V
DS
= 50 V
V
GS
75 V
400
C
100 V
ISS
3
2
1
0
300
200
100
0
C
OSS
C
RSS
0
2
0
25
50
75
100
125
150
1
3
4
5
6
7
8
9
V
DS
, Drain to Source Voltage (V)
Q , Gate Charge (nC)
g
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance Characteristics
10
40
30
R
Limit
Single Pulse
DS(ON)
100 ms
1 ms
10 ms
R
= 156°C/W
q
JA
T = 25°C
A
1
100 ms
1 s
20
10
0
0.1
DC
V
= 10 V
0.01
GS
Single Pulse
= 156°C/W
R
q
JA
T = 25°C
A
0.001
0.1
1
100
, Drain−Source Voltage (V)
1000
10
0.001
0.01
0.1
1
10
100
1000
t , Time (s)
1
V
DS
Figure 9. Maximum Safe Operating Area
Figure 10. Single Pulse Maximum
Power Dissipation
1
D = 0.5
0.2
R
R
(t) = r(t) + R
= 156°C/W
q
q
q
JA
JA
JA
0.1
0.1
P(pk)
0.05
t
1
0.01
t
2
0.02
T − T = P * R (t)
Duty Cycle, D = t /t
q
JA
J
A
0.01
Single Pulse
1
2
0.001
1000
0.001
0.01
0.1
t , Time (s)
1
10
100
0.0001
1
Figure 11. Transient Thermal Response Curve
NOTE: Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
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4
FDC2512
POWERTRENCH is a registered trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States
and/or other countries.
SUPERSOT is a trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other
countries.
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5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TSOT23 6−Lead
CASE 419BL
ISSUE A
1
DATE 31 AUG 2020
SCALE 2:1
GENERIC
MARKING DIAGRAM*
XXX MG
G
1
XXX = Specific Device Code
M
= Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present. Some products
may not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON83292G
TSOT23 6−Lead
PAGE 1 OF 1
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are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
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© Semiconductor Components Industries, LLC, 2018
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