FDC3601N [ONSEMI]
双 N 沟道，100V 指定 PowerTrench® MOSFET，1.0A，500mΩ;
| 型号： | FDC3601N |
| 厂家： | 
ONSEMI |
| 描述： | 双 N 沟道，100V 指定 PowerTrench® MOSFET，1.0A，500mΩ PC 开关 光电二极管 晶体管 |
| 文件： | 总7页 (文件大小：328K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
MOSFET – Dual, N-Channel,
POWERTRENCH)
V
R
MAX
I MAX
D
DSS
DS(ON)
100 V
500 mW @ 10 V
550 mW @ 6.0 V
1.0 A
100 V Specified
FDC3601N
D2
S1
General Description
D1
These N−Channel 100 V specified MOSFETs are produced using
onsemi’s advanced POWERTRENCH process that has been
especially tailored to minimize on−state resistance and yet maintain
low gate charge for superior switching performance.
These devices have been designed to offer exceptional power
dissipation in a very small footprint for applications where the bigger
more expensive SO−8 and TSSOP−8 packages are impractical.
G2
S2
G1
TSOT23 6−Lead
SUPERSOT−6
CASE 419BL
Features
MARKING DIAGRAM
• 1.0 A, 100 V
R
R
= 500 W @ V = 10 V
GS
DS(ON)
XXX MG
= 550 W @ V = 6.0 V
DS(ON)
GS
G
• Low Gate Charge (3.7 nC Typical)
1
• Fast Switching Speed
XXX = Specific Device Code
• High Performance Trench Technology for Extremely Low R
M
G
= Date Code
= Pb−Free Package
(Note: Microdot may be in either location)
DS(ON)
• SUPERSOTt−6 Package: Small Footprint 72% (Smaller than
Standard SO−8); Low Profile (1 mm Thick)
• This is a Pb−Free Device
PINOUT
Applications
• Load Switch
• Battery Protection
• Power Management
4
5
6
3
2
1
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Symbol
Parameter
Drain−Source Voltage
Ratings
100
20
Unit
V
V
DSS
V
GSS
Gate−Source Voltage
V
I
D
Drain Current
− Continuous (Note 1a)
− Pulsed
1.0
A
4.0
A
P
Power
Dissipation for
Single Operation
(Note 1a)
0.96
0.9
W
W
W
°C
D
ORDERING INFORMATION
See detailed ordering and shipping information on page 5 of
this data sheet.
(Note 1b)
(Note 1c)
0.7
T , T
Operating and Storage Temperature Range −55 to +150
J
STG
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Symbol
Parameter
Ratings
Unit
RqJA
Thermal Resistance, Junction−to−Ambient
(Note 1a)
130
°C/W
RqJC
Thermal Resistance, Junction−to−Case
(Note 1)
60
°C/W
© Semiconductor Components Industries, LLC, 2001
1
Publication Order Number:
December, 2021 − Rev. 4
FDC3601N/D
FDC3601N
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
BV
Drain–Source Breakdown Voltage
V
I
= 0 V, I = 250 mA
100
−
−
−
V
DSS
GS
D
Breakdown Voltage Temperature
Coefficient
= 250 mA,Referenced to 25°C
−
105
mV/°C
DBVDSS
DTJ
D
I
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
V
DS
V
GS
V
GS
= 80 V, V = 0 V
−
−
−
−
−
−
10
mA
nA
nA
DSS
GS
I
= 20 V, V = 0 V
100
GSSF
GSSR
DS
I
= –20 V, V = 0 V
–100
DS
ON CHARACTERISTICS (Note 2)
V
Gate Threshold Voltage
V
I
= V , I = 250 mA
2
2.6
–5
4
V
GS(th)
DS
GS
D
Gate Threshold Voltage Temperature
Coefficient
= 250 mA, Referenced to 25°C
−
−
mV/°C
DVGS(th)
DTJ
D
R
Static Drain–Source On–Resistance
V
GS
V
GS
V
GS
= 10 V, I = 1.0 A
−
−
−
370
396
685
500
550
976
mW
DS(on)
D
= 6 V, I = 0.9 A
D
= 10 V, I = 1.0 A, T = 125°C
D
J
I
On−State Drain Current
V
GS
V
DS
= 10 V, V = 10 V
3
−
−
−
A
S
D(on)
DS
g
FS
Forward Transconductance
= 5 V, I = 1.0 A
−
3.6
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
DS
= 50 V, V = 0 V, f = 1.0 MHz
−
−
−
153
5
−
−
−
pF
pF
pF
iss
GS
C
Output Capacitance
oss
C
Reverse Transfer Capacitance
1
rss
SWITCHING CHARACTERISTICS (Note 2)
t
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
V
= 50 V, I = 1 A, V = 10 V,
GEN
−
−
−
−
−
−
−
8
4
16
8
ns
ns
d(on)
DD
D
GS
R
= 6 W
t
r
t
11
6
20
12
5
ns
d(off)
t
f
ns
Q
V
DS
= 50 V, I = 1.0 A, V = 10 V
3.7
0.8
1
nC
nC
nC
g
D
GS
Q
−
gs
gd
Q
−
DRAIN−SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward Voltage = 0 V, I = 0.8 A (Note 2)
I
−
−
−
0.8
1.2
A
V
S
V
SD
V
GS
0.8
S
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. R
is the sum of the junction−to−case and case−to−ambient thermal resistance where the case thermal reference is defined as the solder
q
JA
mounting surface of the drain pins. R
is guaranteed by design while R
is determined by the user’s board design.
q
q
JC
CA
a. 130°C/W when mounted
b. 140°C/W when mounted
c. 180°C/W when mounted
on a minimum pad.
2
2
on a 0.125 in pad of 2 oz.
on a .005 in pad of 2 oz.
copper.
copper.
Scale 1:1 on letter size paper
2. Pulse Test: Pulse Width < 300 ms, Duty cycle < 2.0 %.
www.onsemi.com
2
FDC3601N
TYPICAL CHARACTERISTICS
1.6
4
3
2
1
0
V
= 10 V
GS
V
GS
= 4.0 V
6.0 V
5.0 V
1.4
1.2
1.0
0.8
4.5 V
4.0 V
4.5 V
5.0 V
6.0 V
10 V
0
2
4
6
8
0
1
2
3
4
V
DS
, Drain−Source Voltage (V)
I , Drain Current (A)
D
Figure 1. On−Region Characteristics
Figure 2. On−Resistance Variation with
Drain Current and Gate Voltage
2.6
2.2
1.8
1.25
I
V
= 1.0 A
I
D
= 0.5 A
D
= 10 V
GS
1
0.75
0.5
T = 125°C
A
1.4
1
T = 25°C
A
0.6
0.2
0.25
−50 −25
0
25
50
75 100 125 150
2
4
6
8
10
T , Junction Temperature (°C)
J
V
GS
, Gate to Source Voltage (V)
Figure 3. On−Resistance Variation with
Figure 4. On−Resistance Variation with
Gate−to−Source Voltage
Temperature
10
1
6
V
DS
= 5 V
V
GS
= 0 V
4.5
3
T = 125°C
A
0.1
25°C
−55°C
0.01
T = 125°C
A
25°C
1.5
0.001
0.0001
−55°C
0
1.5
2.5
3.5
4.5
5.5
0
0.2
0.4
0.6
0.8
1
1.2
V
GS
, Gate to Source Voltage (V)
V
SD
, Body Diode Forward Voltage (V)
Figure 5. Transfer Characteristics
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature
www.onsemi.com
3
FDC3601N
TYPICAL ELECTRICAL CHARACTERISTICS (continued)
200
10
8
I
D
= 1.0 A
f = 1 MHz
= 0 V
V
DS
= 30 V
70 V
C
V
ISS
GS
150
100
50
50 V
6
4
C
C
RSS
2
OSS
0
0
0
1
2
3
4
0
10
20
30
40
50
Q , Gate Charge (nC)
g
V
DS
, Drain to Source Voltage (V)
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance Characteristics
10
1
50
SINGLE PULSE
= 180°C/W
T = 25°C
A
R
LIMIT
DS(ON)
100 ms
1 ms
10 ms
100 ms
1 s
R
q
JA
40
30
20
10
0.1
DC
V
GS
= 10 V
SINGLE PULSE
= 180°C/W
0.01
R
q
JA
T = 25°C
A
0.001
0
0.1
1
10
100
1000
0.001 0.01
0.1
1
10
100
1000
V
DS
, Drain−Source Voltage (V)
t , Time (s)
1
Figure 9. Maximum Safe Operating Area
Figure 10. Single Pulse Maximum Power
Dissipation
1
D = 0.5
R
R
(t) = r(t) * R
q
JA
= 180°C/W
q
q
JA
JA
0.2
0.1
0.1
0.05
P(pk)
0.02
0.01
t1
0.01
t2
SINGLE PULSE
T − T = P * R (t)
q
JA
J
A
Duty Cycle, D = t / t
1
2
0.001
0.0001
0.001
0.1
1
10
100
1000
0.01
t , Time (s)
1
Figure 11. Transient Thermal Response Curve
(Note: Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.)
www.onsemi.com
4
FDC3601N
ORDERING INFORMATION
†
Device
Device Marking
.601
Package Type
Reel Size
Tape Width
Shipping
FDC3601N
TSOT−23−6
(Pb−free)
7”
8 mm
3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
POWERTRENCH is registered trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United
States and/or other countries.
SUPERSOT is a trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other
countries.
www.onsemi.com
5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TSOT23 6−Lead
CASE 419BL
ISSUE A
1
DATE 31 AUG 2020
SCALE 2:1
GENERIC
MARKING DIAGRAM*
XXX MG
G
1
XXX = Specific Device Code
M
= Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present. Some products
may not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON83292G
TSOT23 6−Lead
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2018
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
ADDITIONAL INFORMATION
TECHNICAL PUBLICATIONS:
Technical Library: www.onsemi.com/design/resources/technical−documentation
onsemi Website: www.onsemi.com
ONLINE SUPPORT: www.onsemi.com/support
For additional information, please contact your local Sales Representative at
www.onsemi.com/support/sales
相关型号：
FDC3601ND84Z
Small Signal Field-Effect Transistor, 1A I(D), 100V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6
FAIRCHILD
FDC3601ND87Z
Small Signal Field-Effect Transistor, 1A I(D), 100V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6
FAIRCHILD
FDC3601NL99Z
Small Signal Field-Effect Transistor, 1A I(D), 100V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6
FAIRCHILD
FDC3601NS62Z
Small Signal Field-Effect Transistor, 1A I(D), 100V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6
FAIRCHILD
FDC3601N_NL
Small Signal Field-Effect Transistor, 1A I(D), 100V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6
FAIRCHILD
FDC3612_NL
Small Signal Field-Effect Transistor, 2.6A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6
FAIRCHILD
©2020 ICPDF网 联系我们和版权申明