FDC5614P [ONSEMI]
P 沟道，PowerTrench® MOSFET， 逻辑电平，60V，-3A，105mΩ;
| 型号： | FDC5614P |
| 厂家： | 
ONSEMI |
| 描述： | P 沟道，PowerTrench® MOSFET， 逻辑电平，60V，-3A，105mΩ PC 开关 光电二极管 晶体管 |
| 文件： | 总7页 (文件大小：330K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
MOSFET – P-Channel,
POWERTRENCH), Logic
Level
V
R
MAX
I MAX
D
DSS
DS(on)
0.105 ꢀ @ −10 V
0.135 ꢀ @ −4.5 V
−60 V
−3 A
60 V
S
D
D
FDC5614P
G
D
D
Description
This 60 V P−Channel MOSFET uses onsemi’s high voltage
POWERTRENCH process. It has been optimized for power
management applications.
TSOT23 6−Lead
(SUPERSOTt−6)
CASE 419BL
Features
• −3 A, −60 V
MARKING DIAGRAM
♦ R
♦ R
= 0.105 ꢀ @ V = −10 V
GS
DS(on)
= 0.135 ꢀ @ V = −4.5 V
DS(on)
GS
• Fast Switching Speed
• High Performance Trench Technology for Extremely Low R
• This is a Pb−Free and Halide Free Device
564 MG
G
DS(on)
1
564 = Specific Device Code
Applications
M
= Date Code
• DC−DC Converters
• Load Switch
• Power Management
G
= Pb−Free Package
(Note: Microdot may be in either location)
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted)
A
PIN ASSIGNMENT
Symbol
Parameter
Drain−Source Voltage
Value
−60
20
Unit
V
V
DSS
GSS
1
2
3
6
5
4
V
Gate−Source Voltage
V
Drain Current
− Continuous
− Pulsed
I
D
(Note 1a)
−3
−20
A
Maximum Power Dissipation
(Note 1a)
(Note 1b)
P
D
W
1.6
0.8
T , T
Operating and Storage Junction
Temperature Range
−55 to 150
°C
J
STG
ORDERING INFORMATION
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
†
Device
Package
Shipping
FDC5614P
TSOT−23−6
(SUPERSOTt−6)
(Pb−Free)
3000 /
Tape & Reel
THERMAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifica-
tions Brochure, BRD8011/D.
Symbol
Parameter
Value
Unit
R
Thermal Resistance,
Junction−to−Ambient
78
°C/W
ꢁ
JA
(Note 1a)
(Note 1)
R
Thermal Resistance,
Junction−to−Case
30
°C/W
ꢁ
JC
© Semiconductor Components Industries, LLC, 2022
1
Publication Order Number:
July, 2022 − Rev. 4
FDC5614P/D
FDC5614P
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
BV
Drain–Source Breakdown Voltage
V
= 0 V, I = −250 ꢂ A
−60
−
−
−
V
DSS
GS
D
Breakdown Voltage Temperature
Coefficient
I
D
= −250 μA,
−
−49
mV/°C
ꢃ BVDSS
ꢃ TJ
Referenced to 25°C
I
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
V
V
= −48 V, V = 0 V
−
−
−
−
−
−
−1
ꢂ
A
DSS
DS
GS
I
= 20 V, V = 0 V
100
nA
GSSF
GSSR
GS
DS
I
V
= −20 V, V = 0 V
−100
GS
DS
ON CHARACTERISTICS (Note 2)
V
Gate Threshold Voltage
V
I
= V , I = −250 ꢂ A
−1
−1.6
−3
V
GS(th)
DS
GS D
Gate Threshold Voltage Temperature
Coefficient
= −250 ꢂ A,
Referenced to 25°C
−
4
−
mV/°C
ꢃ VGS(th)
ꢃ TJ
D
R
Static Drain–Source On–Resistance
V
V
V
= −10 V, I = −3 A
−
−
−
82
105
135
190
mꢀ
DS(on)
GS
GS
GS
D
= −4.5 V, I = −2.7 A
105
130
D
= −10 V, I = −3 A,
D
T = 125°C
J
I
On–State Drain Current
V
GS
V
DS
= −10 V, V = −5 V
−20
−
−
−
A
D(on)
DS
g
FS
Forward Transconductance
= −5 V, I = −3 A
−
8
S
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
= −30 V, V = 0 V,
−
−
−
759
90
−
−
−
pF
iss
DS
GS
f = 1.0 MHz
C
Output Capacitance
oss
C
Reverse Transfer Capacitance
39
rss
SWITCHING CHARACTERISTICS (Note 2)
t
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
V
V
= −30 V, I = −1 A,
−
−
−
−
−
−
−
7
14
20
34
22
24
−
ns
d(on)
DD
GS
D
= −10 V, R
= 6 ꢀ
GEN
t
r
10
19
12
15
2.5
3.0
t
d(off)
t
f
Q
V
DS
V
GS
= −30 V, I = −3.0 A,
nC
g
D
= −10 V
Q
gs
gd
Q
−
DRAIN−SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Maximum Continuos–Source Diode Forward Current
Drain–Source Diode Forward Voltage = 0 V, I = −1.3 A (Note 2)
I
−
−
−
−1.3
−1.2
A
V
S
V
SD
V
GS
−0.8
S
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. R
is the sum of the junction−to−case and case−to−ambient thermal resistance where the case thermal reference is defined as the solder
ꢁ
JA
mounting surface of the drain pins. R
is guaranteed by design while R
is determined by the user’s board design.
ꢁ
ꢁ
JC
JA
2
a) 78°C/W when mounted on a 1in pad of 2oz copper on FR−4 board.
b) 156°C/W when mounted on a minimum pad.
2. Pulse Test: Pulse Width ≤ 300 ꢂ s, Duty Cycle ≤ 2.0%
www.onsemi.com
2
FDC5614P
TYPICAL CHARACTERISTICS
15
12
1.8
1.6
V
GS
= −10 V
−6.0 V
−5.0 V
−4.5 V
V
GS
= −3.5 V
−4.0 V
−4.0 V
−3.5 V
−4.5 V
−5.0 V
9
6
3
0
1.4
1.2
1.0
0.8
−6.0 V
−7.0 V
−3.0 V
−2.5 V
−10.0 V
−8.0 V
10
0
2
4
6
8
0
1
2
3
4
5
V
DS
, Drain−Source Voltage (V)
I , Drain Current (A)
D
Figure 1. On−Region Characteristics
Figure 2. On−Resistance Variation with
Drain Current and Gate Voltage
1.8
1.6
1.4
1.2
1.0
0.8
0.4
0.3
I
V
= −3.0 A
D
I
D
= −1.5 A
= −10 V
GS
0.2
0.1
0
T = 125°C
A
T = 25°C
A
0.6
0.4
−50 −25
0
25
50
75
100
125 150
2
4
6
8
10
T , Junction Temperature (5C)
J
V
GS
, Gate to Source Voltage (V)
Figure 3. On−Resistance Variation with Temperature
Figure 4. On−Resistance Variation with
Gate−to−Source Voltage
15
100
10
V
DS
= −5 V
T = −55°C
A
V
GS
= 0 V
25°C
12
125°C
9
6
3
0
1
0.1
T = 125°C
A
0.01
0.001
25°C
−55°C
1
2
3
4
5
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
V
GS
, Gate to Source Voltage (V)
V
SD
, Body Diode Forward Voltage (V)
Figure 5. Transfer Characteristics
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature
www.onsemi.com
3
FDC5614P
TYPICAL CHARACTERISTICS (continued)
10
8
1200
f = 1 Mhz
GS
V
= −10 V
I
D
= −3.0 A
DS
V
= 0 V
1000
800
600
400
C
ISS
−20 V
6
4
2
0
−30 V
C
C
OSS
200
0
RSS
60
0
4
8
12
16
0
10
20
30
40
50
Q , Gate Charge (nC)
g
V
DS
, Drain to Source Voltage (V)
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance Characteristics
30
10
1000
100
10
This Area is Limited
by R
DS(on)
Single Pulse
R
= 156°C/W
ꢁ
JA
T = 25°C
A
100 ꢂ s
1
1 ms
10 ms
Single Pulse
T = Max Rated
0.1
100 ms
1
J
R
= 156°C/W
ꢁ
JA
1 s
T = 25°C
A
DC
0.01
0.1
10
−4
−3
−2
−1
1000
0.01
0.1
1
10
100 300
10
10
1
100
10
10
V
DS
, Drain to Source Voltage (V)
t, Pulse Width (s)
Figure 11. Single Pulse Maximum Power
Dissipation
Figure 9. Maximum Safe Opening Area
2
1
Duty Cycle−Descending Order
D = 0.5
0.2
0.1
0.05
0.1
0.01
P
DM
t
0.02
1
0.01
t
2
R
R
(t)= r(t) x R
ꢁ
JA
ꢁ
ꢁ
JA
156 °C/W
JA =
Single Pulse
Peak T = P
x Z (t) + T
ꢁ
J
DM
JA
A
Duty Cycle, D = t / t
1
2
0.001
−4
−3
−2
−1
10
10
10
10
1
10
100
1000
t, Regular Pulse Duration (s)
Figure 10. Transient Thermal Response Curve
NOTE: Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
www.onsemi.com
4
FDC5614P
POWERTRENCH is registered trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United
States and/or other countries.
SUPERSOT is a trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or
other countries.
www.onsemi.com
5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TSOT23 6−Lead
CASE 419BL
ISSUE A
1
DATE 31 AUG 2020
SCALE 2:1
GENERIC
MARKING DIAGRAM*
XXX MG
G
1
XXX = Specific Device Code
M
= Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present. Some products
may not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON83292G
TSOT23 6−Lead
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2018
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
ADDITIONAL INFORMATION
TECHNICAL PUBLICATIONS:
Technical Library: www.onsemi.com/design/resources/technical−documentation
onsemi Website: www.onsemi.com
ONLINE SUPPORT: www.onsemi.com/support
For additional information, please contact your local Sales Representative at
www.onsemi.com/support/sales
相关型号：
FDC5614PD84Z
Small Signal Field-Effect Transistor, 3A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6
FAIRCHILD
FDC5614PD87Z
Small Signal Field-Effect Transistor, 3A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6
FAIRCHILD
FDC5614PS62Z
Small Signal Field-Effect Transistor, 3A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6
FAIRCHILD
FDC5614PT/R_NL
Small Signal Field-Effect Transistor, 3A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SUPERSOT-6
FAIRCHILD
FDC5614P_NL
Small Signal Field-Effect Transistor, 3A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SUPERSOT-6
FAIRCHILD
©2020 ICPDF网 联系我们和版权申明