FDC608PZ-F171 [ONSEMI]

P 沟道，PowerTrench® MOSFET，2.5V 指定，-20V，-5.8A，30mΩ;


型号：	FDC608PZ-F171
厂家：	ONSEMI
描述：	P 沟道，PowerTrench® MOSFET，2.5V 指定，-20V，-5.8A，30mΩ
文件：	总6页 (文件大小：330K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

DATA SHEET

www.onsemi.com

MOSFET – P-Channel,

POWERTRENCH⁾

2.5 V Specified

TSOT−23−6

CASE 419BL

FDC608PZ, FDC608PZ-F171

Description

This P−Channel 2.5 V specified MOSFET is produced using

onsemi’s advanced POWERTRENCH process that has been

especially tailored to minimize the on−state resistance and yet

maintain low gate charge for superior switching performance. These

devices are well suited for battery power applications: load switching

and power management, battery power circuits, and dc−dc

conversions.

Features

MARKING DIAGRAM

• –5.8 A, –20 V. R

= 30 mW @ V = –4.5 V

= 43 mW @ V = –2.5 V

DS(ON)

608Z MG

• Low Gate Charge

• High Performance Trench Technology for Extremely Low R

DS(ON)

• SuperSOT

–6 Package: Small Footprint (72% Smaller than

Standard SO–8) Low Profile (1 mm Thick)

608Z

= Specific Device Code

= Date Code

= Pb−Free Package

• These Devices are Pb−Free and Halide Free

(Note: Microdot may be in either location)

ABSOLUTE MAXIMUM RATINGS

Values are at T = 25°C unless otherwise noted.

ORDERING INFORMATION

Symbol

Parameter

Drain−Gate Voltage

Gate−Source Voltage

Drain Current – Continuous (Note 1a)

Ratings

–20

Unit

DSS

GSS

†

Package

Device

Shipping

TSOT−23−6

(Pb-Free/

3000 /

Tape & Reel

FDC608PZ

–5.8

–20

Halide Free)

– Pulsed

Maximum Power Dissipation (Note 1a)

(Note 1b)

1.6

0.8

TSOT−23−6

(Pb-Free/

3000 /

Tape & Reel

FDC608PZ−F171

Halide Free)

T , T

Operating and Storage Junction

Temperature Range

–55 to +150

°C

STG

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

THERMAL CHARACTERISTICS

Values are at T = 25°C unless otherwise noted.

Symbol

Parameter

Value

Unit

Thermal Resistance, Junction−to−Ambient

(Note 1a)

°C/W

Thermal Resistance, Junction−to−Case

(Note 1)

°C/W

Publication Order Number:

FDC608PZ/D

March 2022 − Rev. 3

FDC608PZ, FDC608PZ−F171

ELECTRICAL CHARACTERISTICS Values are at T = 25°C unless otherwise noted.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain–Source Breakdown Voltage

= 0 V, I = –250 mA

–20

−

DSS

Breakdown Voltage Temperature

Coefficient

= −250 mA, Referenced to 25°C

−

−10

mV/°C

DBV_DSS

DT_J

Zero Gate Voltage Drain Current

Gate–Body Leakage

= –16 V, V = 0 V

−

−1

DSS

GSS

12 V, V = 0 V

ON CHARACTERISTICS (Note 2)

Gate Threshold Voltage

= V , I = –250 mA

–0.4

–1.0

–1.5

GS(th)

Gate Threshold Voltage

Temperature Coefficient

= −250 mA, Referenced to 25°C

−

mV/°C

DV_GS(th)

DT_J

Static Drain–Source On–Resistance

= –4.5 V, I = –5.8 A

−

DS(on)

= –2.5 V, I = –5.0 A

= –4.5 V, I = –5.8 A, T = 125°C

−

)

On–State Drain Current

= –4.5 V, V = –5 V

–20

−

D(on

Forward Transconductance

= –10 V, I = –5.8 A

−

DYNAMIC CHARACTERISTICS

Input Capacitance

= –10 V, V = 0 V,

−

1330

270

230

−

iss

f = 1.0 MHz

Output Capacitance

Reverse Transfer Capacitance

Input Capacitance

oss

rss

= 15 mV, f = 1.0 MHz

SWITCHING CHARACTERISTICS (Note 2)

Turn–On Delay Time

Turn–On Rise Time

Turn–Off Delay Time

Turn–Off Fall Time

Total Gate Charge

Gate–Source Charge

Gate–Drain Charge

= –10 V, I = –1 A,

−

145

−

d(on)

= –4.5 V, R

= 6 W

GEN

d(off)

= –10 V, I = –5.8 A,

= –4.5 V

−

DRAIN–SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

Maximum Continuous Drain–Source Diode Forward Current

−

–0.7

–1.3

–1.2

Drain–Source Diode Forward Voltage

Diode Reverse Recovery Time

Diode Reverse Recovery Charge

V = 0 V, I = –1.3 A (Note 2)

GS S

I = –5.8 A, d /d = 100 A/ms

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

1. R

is the sum of the junction−to−case and case−to−ambient resistance where the case thermal reference is defined as the solder mounting

surface of the drain pins. R

is guaranteed by design while R

is determined by the user’s board design.

a. 78°C/W when mounted on a 1 in pad of 2oz copper on FR−4 board.

b. 156°C/W when mounted on a minimum pad.

2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤2.0%.

www.onsemi.com

FDC608PZ, FDC608PZ−F171

TYPICAL CHARACTERISTICS

2.6

−2.5 V

−3.0 V

−4.5 V

−3.5 V

= −2.0 V

2.2

1.8

1.4

= −2.0 V

−2.5 V

−3.0 V

−3.5 V

−4.0 V

−4.5 V

0.6

0.5

1.5

2.5

1.4

−V , Drain To Source Voltage (V)

−I , Drain Current (A)

Figure 2. On−Resistance Variation with

Figure 1. On−Region Characteristics

Drain Current and Gate Voltage

1.5

1.3

0.1

= −5.8 A

= −2.9 A

= −4.5 V

0.08

1.1

0.06

T = 125°°CC

0.9

0.7

0.04

0.02

T = 25°C

−50

−25

100 124 150

T , Junction Temperature (5C)

−V , Gate To Source Voltage (V)

Figure 4. On−Resistance Variation with

Gate−to−Source Voltage

Figure 3. On-Resistance Variation With

Temperature

100

= 0 V

= −5 V

0.1

T = 125°C

T = −55°C

0.01

125°C

25°C

0.001

−55°C

25°C

0.0001

0.5

1.5

2.5

0.2 0.4

0.6

0.8

1.2

−V , Gate To Source Voltage (V)

−V , Body Diode Forward Voltage (V)

Figure 6. Body Diode Forward Voltage Variation

with Source Current and Temperature

Figure 5. Transfer Characteristics

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FDC608PZ, FDC608PZ−F171

2500

f = 1 MHz

= −5 V

= −5.8 A

−15 V

= 0 V

2000

iss

1500

1000

−10 V

oss

500

rss

Q , Gate Charge (nC)

−V , Drain To Source Voltage (V)

Figure 8. Capacitance Characteristics

Figure 7. Gate Charge Characteristics

100

SINGLE PULSE

LIMIT

DS(ON)

= 156°C/W

100 ms

T = 25°C

1 ms

10 ms

100 ms

= −4.5 V

0.1

0.01

SINGLE PULSE

= 156°C/W

T = 25°C

0.01

0.1

100

0.1

100

−V , Drain−Source Voltage (V)

t , Time (sec)

Figure 10. Single Pulse Maximum Power

Dissipation

Figure 9. Maximum Safe Operating Area

D = 0.5

(t) = r(t) * R

0.2

= 156°C/W

0.1

P(pk)

0.05

0.02

0.01

T − T = P * R (t)

Duty Cycle, D = t / t

SINGLE PULSE

0.001

0.1

t , TIME (sec)

0.01

0.00001

0.0001

0.001

100

1000

Figure 11. Transient Thermal Response Curve

Thermal characterization performed using the conditions described in Note 1b.

Transient thermal response will change depending on the circuit board design.

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MECHANICAL CASE OUTLINE

PACKAGE DIMENSIONS

TSOT23 6−Lead

CASE 419BL

ISSUE A

DATE 31 AUG 2020

SCALE 2:1

GENERIC

MARKING DIAGRAM*

XXX MG

XXX = Specific Device Code

= Date Code

= Pb−Free Package

(Note: Microdot may be in either location)

*This information is generic. Please refer to

device data sheet for actual part marking.

Pb−Free indicator, “G” or microdot “ G”,

may or may not be present. Some products

may not follow the Generic Marking.

Electronic versions are uncontrolled except when accessed directly from the Document Repository.

Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

DOCUMENT NUMBER:

DESCRIPTION:

98AON83292G

TSOT23 6−Lead

PAGE 1 OF 1

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For additional information, please contact your local Sales Representative at

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

FDC608PZ-F171 [ONSEMI]

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