FDC6301N [ONSEMI]

双 N 沟道，数字 FET，25V，0.22A，4Ω;


型号：	FDC6301N
厂家：	ONSEMI
描述：	双 N 沟道，数字 FET，25V，0.22A，4Ω 开关光电二极管晶体管
文件：	总6页 (文件大小：315K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

DATA SHEET

www.onsemi.com

Dual, N-Channel, Digital FET

FDC6301N

General Description

These dual N−Channel logic level enhancement mode field effect

transistors are produced using onsemi’s proprietary, high cell density,

DMOS technology. This very high density process is especially

tailored to minimize on−state resistance. This device has been

designed especially for low voltage applications as a replacement for

digital transistors. Since bias resistors are not required, these

N−Channel FET’s can replace several digital transistors, with a variety

of bias resistors.

TSOT23 6−Lead

SUPERSOTt−6

CASE 419BL

MARKING DIAGRAM

301 MG

Features

• 25 V, 0.22 A Continuous, 0.5 A Peak

301 = Specific Device Code

♦ R

= 5 W @ V = 2.7 V

DS(on)

= Assembly Operation Month

= 4 W @ V = 4.5 V

DS(on)

= Pb−Free Package

• Very Low Level Gate Drive Requirements Allowing Direct

Operation in 3 V Circuits. V < 1.5 V

(Note: Microdot may be in either location)

GS(th)

• Gate−Source Zener for ESD Ruggedness. >6 kV Human Body Model

• This is a Pb−Free and Halide Free Device

PIN ASSIGNMENT

ABSOLUTE MAXIMUM RATINGS (T_A= 25°C unless otherwise noted)

Symbol

, V

Parameter

Ratings

Unit

Drain−Source Voltage,

DSS

Power Supply Voltage

Gate−Source Voltage, V

Drain / Output Current

GSS

, V

−0.5 to + 8

0.22

I , I

− Continuous

− Pulsed

OUT

0.5

Maximum Power

Dissipation

(Note 1a)

(Note 1b)

0.9

0.7

T , T

Operating and Storage Temperature

Range

−55 to +150

°C

STG

INVERTER APPLICATION

ESD

Electrostatic Discharge Rating

MIL−STD−883D Human Body Model

(100 pF / 1500 W)

6.0

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

OUT

GND

THERMAL CHARACTERISTICS

Symbol

Parameter

Ratings

Unit

RqJA

Thermal Resistance, Junction−to−Ambient

(Note 1a)

140

°C/W

RqJC

Thermal Resistance, Junction−to−Case

(Note 1)

°C/W

ORDERING INFORMATION

†

Device

Package

Shipping

FDC6301N

TSOT−23−6

(SUPERSOTt−6)

(Pb−Free)

3000 /

Tape & Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

Publication Order Number:

May, 2023 − Rev. 5

FDC6301N/D

FDC6301N

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise noted)

Symbol

Parameter

Test Conditions

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain–Source Breakdown Voltage

= 0 V, I = 250 mA

−

DSS

Breakdown Voltage Temperature

Coefficient

= 250 mA, Referenced to 25°C

−

mV/°C

DBV_DSS

DT_J

Zero Gate Voltage Drain Current

= 20 V, V = 0 V

−

DSS

= 20 V, V = 0 V, T = 55°C

Gate–Body Leakage Current

= 8 V, V = 0 V

100

GSS

ON CHARACTERISTICS (Note 2)

Gate Threshold Voltage Temperature

= 250 mA, Referenced to 25°C

−

–2.1

0.85

−

mV/°C

DV_GS(th)

DT_J

Coefficient

GS(th)

DS(on)

Gate Threshold Voltage

= V , I = 250 mA

0.65

1.5

Static Drain–Source On–Resistance

= 2.7 V, I = 0.2 A

−

3.8

6.3

3.1

= 2.7 V, I = 0.2 A, T = 125°C

= 4.5 V, I = 0.4 A

On−State Drain Current

= 10 V, V = 10 V

0.2

−

D(on)

Forward Transconductance

= 5 V, I = 1.0 A

−

0.25

DYNAMIC CHARACTERISTICS

Input Capacitance

= 10 V, V = 0 V, f = 1.0 MHz

−

9.5

−

iss

Output Capacitance

oss

Reverse Transfer Capacitance

1.3

rss

SWITCHING CHARACTERISTICS (Note 2)

Turn–On Delay Time

Turn–On Rise Time

Turn–Off Delay Time

Turn–Off Fall Time

Total Gate Charge

Gate–Source Charge

Gate–Drain Charge

= 6 V, I = 0.5 A,

−

D(on)

= 4.5 V, R

= 50 W

GEN

4.5

D(off)

3.2

0.49

0.22

0.07

= 5 V, I = 0.2 A,

0.7

−

= 4.5 V

−

INVERTER ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise noted)

Symbol

Parameter

Zero Input Voltage Output Current

Input Voltage

Test Conditions

= 20 V, V = 0 V

Min

−

Typ

−

Max

Unit

O(off)

= 5 V, I = 10 mA

−

0.5

−

I(off)

I(on)

= 0.3 V, I = 0.005 A

−

Output to Ground Resistance

V = 2.7 V, I = 0.2 A

−

3.8

O(on)

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

NOTES:

1. R

is the sum of the junction−to−case and case−to−ambient thermal resistance where the case thermal reference is defined as the solder

mounting surface of the drain pins. R

is guaranteed by design while R

is determined by the user’s board design. R

shown below

for single device operation on FR−4 in still air.

a. 140°C/W on a 0.125 in pad

b. 180°C/W on a 0.005 in2 pad

of 2 oz. copper.

2. Pulse Test: Pulse Width ≤ 300 ms, Duty cycle ≤ 2.0 %.

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FDC6301N

TYPICAL CHARACTERISTICS

1.4

0.5

0.4

= 4.5 V

= 3 V

= 3.5 V

= 2.0 V

1.2

1.0

0.8

0.6

= 2.7 V

= 2.5 V

2.5 V

2.7 V

3.0 V

0.3

0.2

0.1

0.0

3.5 V

= 2 V

4.0 V

0.4

4.5 V

= 1.5 V

0.1

0.2

0.3

0.5

I , Drain Current (A)

, Drain − Source Voltage (V)

Figure 2. On−Resistance Variation with

Figure 1. On Region Characteristics

Drain Current and Gate Voltage

1.8

1.6

1.4

1.2

1.0

0.8

0.6

= 0.2 A

= 2.7 V

T = 125°C

T = 25°C

2.5

3.5

4.5

−50

−25

100

125

150

, Gate to Source Voltage (V)

T , Junction Temperature (5C)

Figure 3. On Resistance Variation

with Temperature

Figure 4. On−Resistance Variation with

Gate−to−Source Voltage

0.5

0.2

= 0 V

= 5 V

T = −55°C

0.2

0.1

T = 25°C

T = 125°C

0.15

0.1

T = 125°C

T = 25°C

0.01

T = −55°C

0.001

0.05

0.0

0.0001

0.2

0.5

1.5

2.5

0.4

0.6

0.8

1.0

1.2

, Gate to Source Voltage (V)

, Body Diode Forward Voltage (V)

Figure 5. Transfer Characteristics

Figure 6. Body Diode Forward Voltage

Variation with Source Current

and Temperature

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FDC6301N

TYPICAL CHARACTERISTICS (continued)

= 0.2 A

= 5 V

= 10 V

iss

oss

= 15 V

rss

f = 1 MHz

= 0 V

0.1

0.5

0.1

0.2

0.3

0.4

0.5

0.6

, Drain to Source Voltage (V)

Q , Gate Charge (nC)

Figure 8. Capacitance Characteristics

Figure 7. Gate Charge Characteristics

Single Pulse

1 ms

= See Note 1b

0.5

10 ms

T = 25°C

100 ms

0.2

0.1

1 s

This Area is

Limited by R

DS(on)

0.05

= 2.7 V

Single Pulse

0.02

0.01

= See Note 1b

T = 25°C

0.5

10 15

25 35

0.01

0.1

100 300

Single Pulse Time (s)

, Drain − N−Source Voltage (V)

Figure 9. Single Pulse Maximum

Power Dissipation

Figure 10. Maximum Safe Operating Area

0.5

D = 0.5

0.2

(t) = r(t) * R

= See Note 1b

0.2

0.1

P(pk)

0.05

0.02

0.01

Single pulse

T − T = P * R (t)

0.02

0.01

Duty Cycle, D = t /t

0.0001

0.001

0.01

0.1

t , Time (s)

100

300

Figure 11. Transient Thermal Response Curve

Thermal characterization performed using the conditions described in Note 1b.

Transient thermal response will change depending on the circuit board design.

SUPERSOT is a trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other

countries.

www.onsemi.com

MECHANICAL CASE OUTLINE

PACKAGE DIMENSIONS

TSOT23 6−Lead

CASE 419BL

ISSUE A

DATE 31 AUG 2020

SCALE 2:1

GENERIC

MARKING DIAGRAM*

XXX MG

XXX = Specific Device Code

= Date Code

= Pb−Free Package

(Note: Microdot may be in either location)

*This information is generic. Please refer to

device data sheet for actual part marking.

Pb−Free indicator, “G” or microdot “ G”,

may or may not be present. Some products

may not follow the Generic Marking.

Electronic versions are uncontrolled except when accessed directly from the Document Repository.

Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

DOCUMENT NUMBER:

DESCRIPTION:

98AON83292G

TSOT23 6−Lead

PAGE 1 OF 1

ON Semiconductor and

are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.

ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding

the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically

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onsemi,

, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates

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A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any

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provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may

vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license

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TECHNICAL PUBLICATIONS:

Technical Library: www.onsemi.com/design/resources/technical−documentation

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For additional information, please contact your local Sales Representative at

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

FDC6301N [ONSEMI]

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