FDC6320C [ONSEMI]
双 N 和 P 沟道数字 FET，25V;
| 型号： | FDC6320C |
| 厂家： | 
ONSEMI |
| 描述： | 双 N 和 P 沟道数字 FET，25V 开关 光电二极管 晶体管 |
| 文件： | 总9页 (文件大小：484K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi
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liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,
regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
FDC6320C
Dual N & P Channel , Digital FET
Features
N-Ch 25 V, 0.22 A, RDS(ON) = 5 W @ VGS= 2.7 V.
General Description
These dual N & P Channel logic level enhancement mode
field
effect
transistors
are
produced
using
ON
P-Ch 25 V, -0.12 A, RDS(ON) = 13 W @ VGS= -2.7 V.
Semiconductor's proprietary, high cell density, DMOS
technology. This very high density process is especially
tailored to minimize on-state resistance. The device is an
improved design especially for low voltage applications as a
replacement for bipolar digital transistors in load switching
applications. Since bias resistors are not required, this dual
digital FET can replace several digital transistors with
difference bias resistors.
Very low level gate drive requirements allowing direct
operation in 3 V circuits. VGS(th) < 1.5 V.
Gate-Source Zener for ESD ruggedness.
>6kV Human Body Model
Replace NPN & PNP digital transistors.
SuperSOTTM-6
SuperSOTTM-8
SOT-23
SOIC-16
SO-8
SOT-223
4
3
2
1
5
6
Absolute Maximum Ratings TA = 25oC unless other wise noted
Symbol Parameter
N-Channel
P-Channel
Units
VDSS, VCC Drain-Source Voltage, Power Supply Voltage
25
8
-25
-8
V
V
A
Gate-Source Voltage,
Drain/Output Current
VGSS, VIN
ID, IO
- Continuous
- Pulsed
0.22
0.5
-0.12
-0.5
Maximum Power Dissipation
(Note 1a)
(Note 1b)
0.9
W
PD
0.7
Operating and Storage Tempature Ranger
-55 to 150
6
°C
kV
TJ,TSTG
ESD
Electrostatic Discharge Rating MIL-STD-883D
Human Body Model (100pf / 1500 Ohm)
THERMAL CHARACTERISTICS
RqJA
RqJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
140
60
°C/W
°C/W
© 1997 Semiconductor Components Industries, LLC.
October-2017, Rev. 3
Publication Order Number:
FDC6320C/D
DMOS Electrical Characteristics (TA = 25 OC unless otherwise noted )
Symbol
Parameter
Conditions
Min
Typ
Max
Units
Type
OFF CHARACTERISTICS
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
VGS = 0 V, ID = -250 µA
ID= 250 µA, Referenced to 25 oC
ID = -250 µA, Referenced to 25 oC
VDS= 20 V, VGS= 0 V,
TJ = 55°C
N-Ch
25
V
mV /oC
µA
P-Ch -25
N-Ch
Breakdown Voltage Temp. Coefficient
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
Gate - Body Leakage Current
25
DBVDSS/DTJ
P-Ch
-20
IDSS
N-Ch
1
10
P-Ch
-1
µA
IDSS
VDS =-20 V, VGS = 0 V,
TJ = 55°C
-10
100
-100
N-Ch
P-Ch
nA
nA
IGSS
VGS = 8 V, VDS= 0 V
VGS = -8 V, VDS= 0 V
ON CHARACTERISTICS (Note 2)
ID = 250 µA, Referenced to 25 o C
ID= -250 µA, Referenced to 25 o C
VDS = VGS, ID= 250 µA
VDS = VGS, ID= -250 µA
VGS = 2.7 V, ID = 0.2 A
TJ =125°C
mV / oC
V
Gate Threshold Voltage Temp. Coefficient
N-Ch
-2.1
1.9
0.85
-1
DVGS(th)/DTJ
P-Ch
Gate Threshold Voltage
N-Ch 0.65
P-Ch -0.65
N-Ch
1.5
-1.5
5
VGS(th)
Static Drain-Source On-Resistance
3.8
6.3
3.1
10.6
15
RDS(ON)
W
9
4
VGS = 4.5 V, ID = 0.4 A
VGS = -2.7 V, ID = -0.05 A
TJ =125°C
P-Ch
13
21
10
7.9
VGS = -4.5 V, ID = -0.2 A
VGS = 2.7 V, VDS = 5 V
VGS = -2.7 V, VDS = -5 V
VDS = 5 V, ID= 0.4 A
VDS = -5 V, ID= -0.2 A
On-State Drain Current
N-Ch 0.2
P-Ch -0.05
N-Ch
A
S
ID(ON)
Forward Transconductance
0.2
gFS
P-Ch
0.135
DYNAMIC CHARACTERISTICS
Input Capacitance
N-Channel
VDS = 10 V, VGS = 0 V,
f = 1.0 MHz
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
9.5
11
6
pF
pF
pF
Ciss
Coss
Crss
Output Capacitance
P-Channel
VDS = -10 V, VGS = 0 V,
f = 1.0 MHz
7
Reverse Transfer Capacitance
1.3
1.4
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2
DMOS Electrical Characteristics (TA = 25 OC unless otherwise noted )
Symbol
Parameter
Conditions
Min
Typ
Max Units
Type
SWITCHING CHARACTERISTICS (Note 2)
tD(on)
Turn - On Delay Time
Turn - On Rise Time
N-Channel
N-Ch
P-Ch
N-Ch
5
6
11
12
10
nS
nS
VDD = 6 V, ID = 0.5 A,
4.5
tr
VGS = 4.5 V, RGEN = 50 W
P-Ch
N-Ch
P-Ch
N-Ch
6
4
12
10
15
8
Turn - Off Delay Time
Turn - Off Fall Time
P-Channel
nS
nS
tD(off)
VDD = -6 V, ID = -0.5 A,
7.4
3.2
tf
VGEN= -4.5 V, RGEN = 50 W
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
4
10
0.4
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
N-Channel
VDS = 5 V,
ID = 0.2 A, VGS = 4.5 V
0.29
0.23
0.105
0.12
0.045
0.03
nC
nC
nC
Qg
0.32
Qgs
Qgd
P-Channel
VDS = -5 V,
ID = -0.2A, VGS = -4.5 V
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Maximum Continuous Drain-Source Diode Forward Current
N-Ch
P-Ch
N-Ch
P-Ch
0.5
-0.5
1.3
A
V
IS
Drain-Source Diode Forward Voltage
0.97
-1
VSD
VGS = 0 V, IS = 0.5 A (Note 2)
VGS = 0 V, IS = -0.5 A (Note 2)
-1.3
Notes:
1. RqJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RqJC is guaranteed by
design while RqCA is determined by the user's board design.
Typical RqJA using the board layouts shown below on FR-4 PCB in a still air environment:
a. 140OC/W on a 0.125 in2 pad of
2oz copper.
b. 180OC/W on a 0.005 in2 of pad
of 2oz copper.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
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3
Typical Electrical Characteristics: N-Channel
0.5
1.4
1.2
1
VGS = 4.5V
4.0
3.5
3.0
VGS = 2.0V
0.4
0.3
0.2
0.1
0
2.7
2.5
2.5
2.7
3.0
2.0
3.5
4.0
0.8
0.6
4.5
1.5
0
0.5
1
1.5
2
2.5
3
0
0.1
0.2
0.3
0.4
0.5
V
, DRAIN-SOURCE VOLTAGE (V)
DS
I
, DRAIN CURRENT (A)
D
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
15
12
9
1.8
1.6
1.4
1.2
1
I D = 0.2A
I
= 0.2A
D
V
= 2.7 V
GS
25°C
125°C
6
3
0.8
0
0.6
-50
2
2.5
V
3
3.5
4
-25
0
25
50
75
100
125
150
, GATE TO SOURCE VOLTAGE (V)
GS
T
, JUNCTION TEMPERATURE (°C)
J
Figure 3. On-Resistance Variation
Figure 4. On Resistance Variation with
with Temperature.
Gate-To- Source Voltage.
0.5
0.2
0.15
0.1
V GS = 0V
T
= -55°C
V DS = 5.0V
J
0.2
0.1
25°C
T
= 125°C
25°C
J
125°C
0.01
-55°C
0.001
0.05
0
0.5
0.0001
1
1.5
2
2.5
0.2
0.4
V
0.6
0.8
1
1.2
V
, GATE TO SOURCE VOLTAGE (V)
, BODY DIODE FORWARD VOLTAGE (V)
GS
SD
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage
Variation with Source Current and
Temperature.
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4
Typical Electrical Characteristics: N-Channel (continued)
5
4
3
2
1
0
30
20
ID = 0.2A
VDS = 5.0V
10
5
C
C
iss
oss
3
2
f = 1 MHz
VGS = 0V
C
rss
1
0.1
0.5
1
2
5
10
25
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
V
, DRAIN TO SOURCE VOLTAGE (V)
DS
Q
, GATE CHARGE (nC)
g
Figure 7. Capacitance Characteristics.
Figure 8. Gate Charge Characteristics.
0.8
5
4
3
2
1
0.5
SINGLE PULSE
RqJA =See note 1b
0.2
0.1
T = 25°C
A
0.05
VGS = 2.7V
SINGLE PULSE
R JA =See note 1b
0.02
0.01
q
TA = 25°C
0
0.01
0.1
1
10
100
300
0.5
1
2
5
10
20
40
SINGLE PULSE TIME (SEC)
V
, DRAI N-SOURCE VOLTAGE (V)
DS
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power
Dissipation.
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5
Typical Electrical Characteristics: P-Channel
2
1.5
1
0.2
-4.0
-3.5
V
= -5.0V
-4.5
GS
V
= -2.0 V
GS
-3.0
0.15
0.1
0.05
0
-2.5
-2.7
-2.7
-2.5
-3.0
-4.0
-2.0
-3.5
-4.5
0.5
0
0.05
0.1
-I , DRAIN CURRENT (A)
0.15
0.2
0
1
2
3
4
D
-V , DRAIN-SOURCE VOLTAGE (V)
DS
Figure 11. On-Region Characteristics.
Figure 12. On-Resistance Variation with
Drain Current and Gate Voltage.
25
20
15
10
5
1.6
ID = -0.05A
I
= -0.05A
= -2.7V
T = 25°C
A
D
V
1.4
1.2
1
GS
125 °C
0.8
0.6
0
-50
-25
0
25
50
75
100
125
150
0
1
2
3
4
5
6
7
8
T , JUNCTION TEMPERATURE (°C)
-V
,GATE TO SOURCE VOLTAGE (V)
J
GS
Figure 13. On-Resistance Variation
Figure 14. On Resistance Variation with
Gate-To- Source Voltage.
with Temperature.
0.5
0.1
-1
T
J
= -55°C
VDS = -5V
VGS = 0V
T
J
= 125°C
25°C
-0.75
-0.5
-0.25
0
125°C
25°C
0.01
-55°C
0.0001
-0.5
-1
V
-1.5
-2
-2.5
-3
0
0.2
-V
0.4
0.6
0.8
1
1.2
, GATE TO SOURCE VOLTAGE (V)
GS
, BODY DIODE FORWARD VOLTAGE (V)
SD
Figure 15. Transfer Characteristics.
Figure 16. Body Diode Forward Voltage
Variation with Source Current and
Temperature.
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Typical Electrical Characteristics: P-Channel (continued)
8
6
4
2
0
0.8
0.5
I D = -0.2A
VDS= -5V
-10
-15
0.2
0.1
0.05
VGS = -2.7V
SINGLE PULSE
RqJA=See Note 1b
TA = 25°C
0.02
0.01
0
0.1
0.2
0.3
0.4
0.5
1
2
5
10
20
40
Q
, GATE CHARGE (nC)
g
- V , DRAIN-SOURCE VOLTAGE (V)
DS
Figure 18. Maximum Safe Operating Area.
Figure 17. Gate Charge Characteristics.
25
5
4
3
2
1
0
15
10
SINGLE PULSE
C
iss
RqJA =See note 1b
TA = 25°C
C
oss
5
3
2
f = 1 MHz
VGS = 0 V
C
rss
1
0.1
0.01
0.1
1
10
100
300
0.3
1
2
5
10 15
25
SINGLE PULSE TIME (SEC)
-V , DRAIN TO SOURCE VOLTAGE (V)
DS
Figure 19. Capacitance Characteristics.
Figure 20. Single Pulse Maximum Power
Dissipation.
1
D = 0.5
0.5
R
(t) = r(t) * R
JA
q
JA
q
R
= See Note 1b
0.2
0.2
JA
q
0.1
0.1
P(pk)
0.05
0.05
t
1
t
2
0.02
0.01
T
- T = P * R
(t)
JA
J
A
q
Single Pulse
0.02
0.01
Duty Cycle, D = t / t
1
2
0.0001
0.001
0.01
0.1
, TIME (sec)
1
10
100
300
t
1
Figure 21. Transient Thermal Response Curve.
Note: Thermal characterization performed using the conditions described in note 1b.Transient thermal
response will change depending on the circuit board design.
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ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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