FDC6321C [ONSEMI]
双 N 和 P 沟道，数字 FET，25V;
| 型号： | FDC6321C |
| 厂家： | 
ONSEMI |
| 描述： | 双 N 和 P 沟道，数字 FET，25V 开关 光电二极管 晶体管 |
| 文件： | 总10页 (文件大小：332K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
Dual, N & P-Channel,
Digital FET
N−Channel
MAX
V
DSS
R
I MAX
D
DS(ON)
25 V
0.45 W @ 4.5 V
P−Channel
0.68 A
FDC6321C
General Description
These dual N & P Channel logic level enhancement mode field
effect transistors are produced using onsemi’s proprietary, high cell
density, DMOS technology. This very high density process is
especially tailored to minimize on−state resistance. This device has
been designed especially for low voltage applications as a replacement
for digital transistors in load switching applications. Since bias
resistors are not required this dual digital FET can replace several
digital transistors with different bias resistors.
V
R
MAX
I MAX
D
DSS
DS(ON)
−25 V
1.1 W @ −4.5 V
−0.46 A
D2
S1
D1
G2
S2
G1
Features
TSOT23 6−Lead
SUPERSOTt−6
CASE 419BL
• N−Channel 0.68 A, 25 V
R
= 0.45 W @ V = 4.5 V
GS
DS(ON)
• P−Channel −0.46 A, −25 V
= 1.1 W @ V = −4.5 V
R
DS(ON)
GS
MARKING DIAGRAM
• Very Low Level Gate Drive Requirements Allowing Direct
Operation in 3 V Circuits. V < 1.0 V.
GS(th)
• Gate−Source Zener for ESD Ruggedness. >6 kV Human Body Model
• Replace Multiple Dual NPN & PNP Digital Transistors
• This is a Pb−Free Device
321 MG
G
1
321 = Specific Device Code
M
G
= Assembly Operation Month
= Pb−Free Package
(Note: Microdot may be in either location)
PINOUT
4
5
6
3
2
1
ORDERING INFORMATION
†
Device
FDC6321C
Package
Shipping
3000 /
Tape & Reel
TSOT−23−6
(Pb−free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 1999
1
Publication Order Number:
February, 2022 − Rev. 3
FDC6321C/D
FDC6321C
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Symbol
, V
Parameter
Drain−Source Voltage, Power Supply Voltage
Gate−Source Voltage
N−Channel
P−Channel
−25
Unit
V
V
25
8
DSS CC
V , V
GSS IN
−8
V
I , I
Drain/Output Current
− Continuous
− Pulsed
0.68
2
−0.46
−1.5
A
D
O
A
P
Power Dissipation
(Note 1a)
(Note 1b)
0.9
W
W
°C
kV
D
0.7
−55 to +150
6
T , T
Operating and Storage Temperature Range
J
STG
ESD
Electrostatic Discharge Rating MIL−STD−883D
Human Body Model (100 pF / 1500 W)
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Symbol
Parameter
Ratings
Unit
RqJA
Thermal Resistance, Junction−to−Ambient
(Note 1a)
140
°C/W
RqJC
Thermal Resistance, Junction−to−Case (Note 1)
60
°C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol Parameter Test Conditions
OFF CHARACTERISTICS
Type
Min
Typ
Max
Unit
BV
Drain–Source Breakdown Volt-
age
V
GS
V
GS
= 0 V, I = 250 mA
N−Ch
P−Ch
25
−25
−
−
−
−
V
DSS
D
= 0 V, I = −250 mA
D
Breakdown Voltage Temperature
Coefficient
I
D
= 250 mA,Referenced to 25°C
= −250 mA,Referenced to 25°C
N−Ch
P−Ch
−
−
26
−22
−
−
mV/°C
DBVDSS
DTJ
D
I
I
Zero Gate Voltage Drain Current
Gate–Body Leakage Current
V
V
= 20 V, V = 0 V
N−Ch
P−Ch
−
−
−
−
1
mA
nA
nA
DSS
DS
DS
GS
= 20 V, V = 0 V, T = 55°C
10
GS
J
V
DS
V
DS
= −20 V, V = 0 V
−
−
−
−
−1
−10
GS
= −20 V, V = 0 V, T = 55°C
GS
J
I
V
GS
V
GS
= 8 V, V = 0 V
N−Ch
P−Ch
−
−
100
−100
GSS
DS
= –8 V, V = 0 V
DS
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
Temperature Coefficient
I
D
= 250 mA, Referenced to 25°C
= −250 mA, Referenced to 25°C
N−Ch
P−Ch
−
−
–2.6
2.1
−
−
mV/°C
DVGS(th)
DTJ
D
I
V
GS(th)
Gate Threshold Voltage
V
DS
V
DS
= V , I = 250 mA
N−Ch
P−Ch
0.65
−0.65
0.8
−0.86
1.5
−1.5
V
GS
D
= V , I = −250 mA
GS
D
R
Static Drain–Source
On–Resistance
V
GS
V
GS
V
GS
V
GS
V
GS
V
GS
= 4.5 V, I = 0.5 A
N−Ch
N−Ch
N−Ch
P−Ch
P−Ch
P−Ch
−
−
−
−
−
−
0.33
0.51
0.44
0.87
1.21
1.22
0.45
0.72
0.6
W
DS(on)
D
= 4.5 V, I = 0.5 A, T = 125°C
D
J
= 2.7 V, I = 0.25 A
D
= −4.5 V, I = −0.5 A
1.1
D
= −4.5 V, I = −0.5 A, T = 125°C
1.8
1.5
D
J
= −2.7 V, I = −0.25 A
D
I
On−State Drain Current
V
V
= 4.5 V, V = 5 V
N−Ch
P−Ch
1
−
−
−
−
A
S
D(on)
GS
GS
DS
= −4.5 V, V = −5 V
−1
DS
g
FS
Forward Transconductance
V
DS
V
DS
= 5 V, I = 0.5 A
N−Ch
P−Ch
−
−
1.45
0.8
−
−
D
= −5 V, I = −0.5 A
D
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2
FDC6321C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (continued)
Symbol
Parameter
Test Conditions
Type
Min
Typ
Max
Unit
DYNAMIC CHARACTERISTICS
C
Input Capacitance
N−Channel
= 10 V, V = 0 V, f = 1.0 MHz
N−Ch
P−Ch
−
−
50
63
−
−
pF
pF
pF
iss
V
DS
GS
C
Output Capacitance
N−Ch
P−Ch
−
−
28
34
−
−
oss
P−Channel
= −10 V, V = 0 V, f = 1.0 MHz
V
DS
GS
C
Reverse Transfer Capacitance
N−Ch
P−Ch
−
−
9
10
−
−
rss
SWITCHING CHARACTERISTICS (Note 2)
t
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
N−Channel
N−Ch
P−Ch
−
−
3
7
6
ns
ns
d(on)
V
DD
V
GS
= 6 V, I = 0.5 A,
20
D
= 4.5 V, R
= 50 W
GEN
t
r
N−Ch
P−Ch
−
−
8
9
16
18
t
N−Ch
P−Ch
−
−
17
55
30
110
ns
d(off)
P−Channel
V
DD
V
GS
= −6 V, I = −0.5 A,
= −4.5 V, R
D
= 50 W
GEN
t
f
N−Ch
P−Ch
−
−
13
35
25
70
ns
Q
N−Channel
= 5 V, I = 0.5 A, V = 4.5 V
N−Ch
P−Ch
−
−
1.64
1.1
2.3
1.5
nC
nC
nC
g
V
DS
D
GS
Q
N−Ch
P−Ch
−
−
0.38
0.32
−
−
gs
gd
P−Channel
= −5 V, I = −0.25 A, V = −4.5 V
V
DS
D
GS
Q
N−Ch
P−Ch
−
−
0.45
0.25
−
−
DRAIN−SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Maximum Continuous Drain–Source Diode Forward Current
I
S
N−Ch
P−Ch
−
−
−
−
0.3
A
V
−0.5
V
SD
Drain–Source Diode Forward
Voltage (Note 2)
V
GS
V
GS
V
GS
V
GS
= 0 V, I = 0.5 A
N−Ch
N−Ch
P−Ch
P−Ch
−
−
−
−
0.83
0.69
−0.89
−0.75
1.2
0.85
−1.2
−0.85
S
= 0 V, I = 0.5 A, T = 125°C
S
J
= 0 V, I = −0.5 A
S
= 0 V, I = −0.5 A, T = 125°C
S
J
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. R
is the sum of the junction−to−case and case−to−ambient thermal resistance where thecase thermal reference is defined as the solder
q
JA
mounting surface of the drain pins. R
is guaranteed by design while R
is determined by the user’s board design.
q
q
JC
CA
2
a. 140°C/W on a 0.125 in pad
b. 180°C/W on a 0.005 in2 pad
of 2 oz. copper.
of 2 oz. copper.
2. Pulse Test: Pulse Width < 300 ms, Duty cycle < 2.0 %.
www.onsemi.com
3
FDC6321C
TYPICAL CHARACTERISTICS: N−CHANNEL
1.5
1.2
0.9
0.6
0.3
0
2
V
= 4.5 V
GS
3.5
3.0
V
GS
= 2.0 V
2.0
1.5
2.7
1.5
1
2.5
2.5
2.7
3.0
0.8
3.5
4.5
1
0.5
0
0
0.5
1
1.5
2
0.2
0.4
0.6
1.2
V
DS
, Drain−Source Voltage (V)
I , Drain Current (A)
D
Figure 1. On−Region Characteristics
Figure 2. On−Resistance Variation with
Drain Current and Gate Voltage
1.6
1.4
1.2
1
2
1.6
1.2
0.8
0.4
0
I
V
= 0.5 A
I
= 0.5 A
D
D
= 4.5 V
GS
125°C
25°C
0.8
0.6
−50 −25
1
1.5
2
2.5
3
3.5
4
4.5
5
0
25
50
75 100 125 150
V
GS
, Gate to Source Voltage (V)
T , Junction Temperature (°C)
J
Figure 3. On−Resistance Variation with
Figure 4. On−Resistance Variation with
Gate−to−Source Voltage
Temperature
1
1
V
GS
= 0 V
V
DS
= 5 V
25°C
T = −55°C
J
T = 125°C
J
0.8
0.6
0.4
25°C
0.1
125°C
−55°C
0.01
0.001
0.2
0
0.0001
0
0.2
V
0.4
0.6
0.8
1
1.2
0.5
1
2
2.5
0
1.5
V
GS
, Gate to Source Voltage (V)
, Body Diode Forward Voltage (V)
SD
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature
Figure 5. Transfer Characteristics
www.onsemi.com
4
FDC6321C
TYPICAL CHARACTERISTICS: N−CHANNEL (continued)
150
5
4
3
2
1
0
I
D
= 0.5 A
V
= 5 V
DS
100
10 V
50
C
ISS
15 V
C
OSS
20
10
5
f = 1 MHz
= 0 V
V
GS
C
RSS
0.1
0.5
, Drain to Source Voltage (V)
DS
1
2
5
10
25
0
0.4
0.8
1.2
1.6
2
Q , Gate Charge (nC)
g
V
Figure 8. Capacitance Characteristics
Figure 7. Gate Charge Characteristics
5
4
3
2
1
0
5
SINGLE PULSE
100 ms
1 ms
R
= 180°C/W
q
JA
R
LIMIT
DS(ON)
T = 25°C
A
1
10 ms
0.3
0.1
100 ms
1 s
V
= 4.5 V
GS
SINGLE PULSE
R
T = 25°C
DC
0.03
0.01
= 180°C/W
q
JA
A
0.01
0.1
1
10
100 300
1
0.1 0.2
0.5
2
5
10 20 40
t , Single Pulse Time (s)
1
V
DS
, Drain−Source Voltage (V)
Figure 10. Single Pulse Maximum Power
Dissipation
Figure 9. Maximum Safe Operating Area
www.onsemi.com
5
FDC6321C
TYPICAL CHARACTERISTICS: P−CHANNEL
1.5
1.25
1
2.4
V
GS
= −4.5 V
−3.5
−3.0
2.2
−2.7
V
GS
= −2.0 V
2
1.8
1.6
1.4
1.2
1
−2.5
0.75
0.5
0.25
0
−2.5
−2.0
−1.5
−2.7
−3.0
−3.5
−4.0
−4.5
0.8
0.4
0
1
2
3
4
5
0
0.2
0.6
0.8
1
−V , Drain−Source Voltage (V)
DS
−I , Drain Current (A)
D
Figure 11. On−Region Characteristics
Figure 12. On−Resistance Variation with
Drain Current and Gate Voltage
5
4
3
2
1
0
1.6
1.4
1.2
1
I
V
= −0.5 A
D
I
= −0.5 A
D
= −4.5 V
GS
125°C
25°C
0.8
0.6
−50 −25
0
25
50
75
100 125 150
−1 −1.5 −2 −2.5 −3 −3.5 −4 −4.5 −5
, Gate to Source Voltage (V)
T , Junction Temperature (°C)
J
V
GS
Figure 13. On−Resistance Variation with
Figure 14. On−Resistance Variation with
Gate−to−Source Voltage
Temperature
−1
−0.75
−0.5
−0.25
0
0.5
0.1
V
GS
= 0 V
T = −55°C
V
= −5 V
J
DS
25°C
T = 125°C
J
25°C
125°C
0.01
−55°C
0.001
0.0001
0
0.2
0.4
0.6
0.8
1
1.2
−0.5
−1
−1.5
−2
−2.5
−3
−V , Body Diode Forward Voltage (V)
SD
V
GS
, Gate to Source Voltage (V)
Figure 15. Transfer Characteristics
Figure 16. Body Diode Forward Voltage
Variation with Source Current and Temperature
www.onsemi.com
6
FDC6321C
TYPICAL CHARACTERISTICS: P−CHANNEL (continued)
5
4
3
2
150
V
DS
= −5 V
I
D
= −0.5 A
100
−10 V
C
ISS
−15 V
50
20
10
5
C
OSS
C
RSS
1
0
f = 1 MHz
= 0 V
V
GS
0
0.3
0.6
0.9
1.2
1.5
1.8
0.1
1
5
10 15 25
0.3 0.5
−V , Drain to Source Voltage (V)
DS
Q , Gate Charge (nC)
g
Figure 17. Gate Charge Characteristics
Figure 18. Capacitance Characteristics
5
4
3
2
1
0
2
SINGLE PULSE
1
1 ms
R
= 180°C/W
q
JA
R
LIMIT
DS(ON)
T = 25°C
A
10 ms
0.3
100 ms
0.1
1 s
DC
V
= −4.5 V
GS
SINGLE PULSE
= 180°C/W
0.03
0.01
R
q
JA
T = 25°C
A
0.1 0.2
0.5
1
2
5
10 20 40
0.01
0.1
1
10
100 300
−V , Drain−Source Voltage (V)
DS
Single Pulse Time (s)
Figure 19. Maximum Safe Operating Area
Figure 20. Single Pulse Maximum Power
Dissipation
1
D = 0.5
R
R
(t) = r(t) * R
q
JA
= 180°C/W
q
q
JA
JA
0.2
0.1
0.1
P(pk)
0.05
0.02
t1
t2
0.01
SINGLE PULSE
T − T = P * R (t)
q
JA
J
A
Duty Cycle, D = t / t
1
2
0.01
0.0001
0.001
0.01
0.1
t , Time (s)
1
10
100
300
1
Figure 21. Transient Thermal Response Curve
Note: Thermal characterization performed using the conditions described in note 1b. Transient
thermal response will change depending on the circuit board design.
www.onsemi.com
7
FDC6321C
SUPERSOT is a trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other
countries.
www.onsemi.com
8
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TSOT23 6−Lead
CASE 419BL
ISSUE A
1
DATE 31 AUG 2020
SCALE 2:1
GENERIC
MARKING DIAGRAM*
XXX MG
G
1
XXX = Specific Device Code
M
= Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present. Some products
may not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON83292G
TSOT23 6−Lead
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2018
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
ADDITIONAL INFORMATION
TECHNICAL PUBLICATIONS:
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For additional information, please contact your local Sales Representative at
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Multi-Output, Sequence Selectable Power-Supply Controller for Mobile ApplicationsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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VISHAY
SI9137DB
Multi-Output, Sequence Selectable Power-Supply Controller for Mobile ApplicationsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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VISHAY
SI9137LG
Multi-Output, Sequence Selectable Power-Supply Controller for Mobile ApplicationsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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VISHAY
SI9122E
500-kHz Half-Bridge DC/DC Controller with Integrated Secondary Synchronous Rectification DriversWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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VISHAY
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