FDC6327C [ONSEMI]
双 N 和 P 沟道，PowerTrench® MOSFET，2.5V 指定;
| 型号： | FDC6327C |
| 厂家： | 
ONSEMI |
| 描述： | 双 N 和 P 沟道，PowerTrench® MOSFET，2.5V 指定 开关 光电二极管 晶体管 |
| 文件： | 总10页 (文件大小：357K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
MOSFET – Dual,
N & P-Channel,
POWERTRENCH)
V
R
MAX
I
MAX
D
DSS
DS(ON)
20 V
0.08 W @ 4.5 V
0.12 W @ 2.5 V
2.7 A
V
DSS
R
MAX
I MAX
D
2.5 V Specified
DS(ON)
−20 V
0.17 W @ −4.5 V
0.25 W @ −2.5 V
−1.6 A
FDC6327C
General Description
These N & P−Channel 2.5 V specified MOSFETs are produced
using onsemi’s advanced POWERTRENCH process that has been
especially tailored to minimize on−state resistance and yet maintain
low gate charge for superior switching performance.
These devices have been designed to offer exceptional power
dissipation in a very small footprint for applications where the bigger
more expensive SO−8 and TSSOP−8 packages are impractical.
D2
S1
D1
G2
S2
G1
TSOT23 6−Lead
SUPERSOTt−6
CASE 419BL
Features
• N−Channel 2.7 A, 20 V
MARKING DIAGRAM
R
R
= 0.08 W @ V = 4.5 V
GS
DS(ON)
= 0.12 W @ V = 2.5 V
DS(ON)
GS
• P−Channel −1.6 A, −20 V
327 MG
R
R
= 0.17 W @ V = −4.5 V
GS
DS(ON)
G
= 0.25 W @ V = −2.5 V
DS(ON)
GS
1
• Fast Switching Speed
327 = Specific Device Code
• Low Gate Charge
M
G
= Assembly Operation Month
= Pb−Free Package
• High Performance Trench Technology for Extremely Low R
DS(ON)
• SUPERSOTt−6 Package: Small Footprint (72% Smaller than
(Note: Microdot may be in either location)
SO−8); Low Profile (1 mm Thick)
• This is a Pb−Free Device
PINOUT
Applications
• DC/DC Converter
• Load Switch
• Motor Driving
3
2
1
4
5
6
ORDERING INFORMATION
†
Device
FDC6327C
Package
Shipping
3000 /
Tape & Reel
TSOT−23−6
(Pb−free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 1999
1
Publication Order Number:
February, 2022 − Rev. 6
FDC6327C/D
FDC6327C
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Symbol
Parameter
Drain−Source Voltage
N−Channel
P−Channel
Unit
V
V
DSS
GSS
20
8
−20
8
V
Gate−Source Voltage
V
I
D
Drain Current
− Continuous (Note 1a)
− Pulsed
2.7
8
−1.9
−8
A
A
P
Power Dissipation
(Note 1a)
0.96
0.9
W
W
W
°C
D
(Note 1b)
(Note 1c)
0.7
T , T
Operating and Storage Junction Temperature
Range
−55 to +150
J
STG
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Symbol
Parameter
Ratings
Unit
RqJA
Thermal Resistance, Junction−to−Ambient
(Note 1a)
130
°C/W
RqJC
Thermal Resistance, Junction−to−Case (Note 1)
60
°C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol Parameter Test Conditions
OFF CHARACTERISTICS
Type
Min
Typ
Max
Unit
BV
Drain–Source Breakdown Volt-
age
V
GS
V
GS
= 0 V, I = 250 mA
N−Ch
P−CH
20
−20
−
−
−
−
V
DSS
D
= 0 V, I = −250 mA
D
Breakdown Voltage Temperature
Coefficient
I
D
= 250 mA,Referenced to 25°C
= −250 mA,Referenced to 25°C
N−Ch
P−CH
−
−
12
−19
−
−
mV/°C
DBVDSS
DTJ
D
I
I
Zero Gate Voltage Drain Current
V
DS
V
DS
= 16 V, V = 0 V
N−Ch
P−CH
−
−
−
−
1
−1
mA
DSS
GS
= −16 V, V = 0 V
GS
I
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
V
GS
V
GS
= 8 V, V = 0 V
All
All
−
−
−
−
100
nA
nA
GSSF
DS
I
= –8 V, V = 0 V
–100
GSSR
DS
ON CHARACTERISTICS (Note 2)
V
GS(th)
Gate Threshold Voltage
V
DS
V
DS
= V , I = 250 mA
N−Ch
P−CH
0.4
−0.4
0.9
−0.9
1.5
−1.5
V
GS
D
= V , I = −250 mA
GS
D
Gate Threshold Voltage
Temperature Coefficient
I
D
= 250 mA, Referenced to 25°C
= −250 mA, Referenced to 25°C
N−Ch
P−CH
−
−
–2.1
2.3
−
−
mV/°C
DVGS(th)
DTJ
D
I
R
Static Drain–Source
On–Resistance
V
GS
V
GS
V
GS
V
GS
V
GS
V
GS
= 4.5 V, I = 2.7 A
N−Ch
N−Ch
N−Ch
P−CH
P−CH
P−CH
−
−
−
−
−
−
0.069
0.094
0.093
0.141
0.203
0.205
0.08
0.13
0.12
0.17
0.27
0.25
W
DS(on)
D
= 4.5 V, I = 2.7 A, T = 125°C
D
J
= 2.5 V, I = 2.2 A
D
= −4.5 V, I = −1.6 A
D
= −4.5 V, I = −1.6 A, T = 125°C
D
J
= −2.5 V, I = −1.3 A
D
I
On−State Drain Current
V
V
= 4.5 V, V = 5 V
N−Ch
P−CH
8
−
−
−
−
A
S
D(on)
GS
GS
DS
= −4.5 V, V = −5 V
−8
DS
g
FS
Forward Transconductance
V
DS
V
DS
= 5 V, I = 2.7 A
N−Ch
P−CH
−
−
7.7
4.5
−
−
D
= −5 V, I = −1.9 A
D
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2
FDC6327C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (continued)
Symbol
Parameter
Test Conditions
Type
Min
Typ
Max
Unit
DYNAMIC CHARACTERISTICS
C
Input Capacitance
N−Channel
= 10 V, V = 0 V, f = 1.0 MHz
N−Ch
P−CH
−
−
325
315
−
−
pF
pF
pF
iss
V
DS
GS
C
Output Capacitance
N−Ch
P−CH
−
−
75
65
−
−
oss
P−Channel
= 10 V, V = 0 V, f = 1.0 MHz
V
DS
GS
C
Reverse Transfer Capacitance
N−Ch
P−CH
−
−
35
24
−
−
rss
SWITCHING CHARACTERISTICS (Note 2)
t
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
N−Channel
N−Ch
P−CH
−
−
5
7
15
14
ns
ns
d(on)
V
DD
V
GS
= 10 V, I = 1 A,
D
= 4.5 V, R
= 6 W
GEN
t
r
N−Ch
P−CH
−
−
9
14
18
25
t
N−Ch
P−CH
−
−
12
14
22
25
ns
d(off)
P−Channel
V
DD
V
GS
= −10 V, I = −1 A,
= −4.5 V, R
D
= 6 W
GEN
t
f
N−Ch
P−CH
−
−
3
3
9
9
ns
Q
N−Channel
= 10 V, I = 2.7 A, V = 4.5 V
N−Ch
P−CH
−
−
3.25
2.85
4.5
4.0
nC
nC
nC
g
V
DS
D
GS
Q
N−Ch
P−CH
−
−
0.65
0.68
−
−
gs
gd
P−Channel
= −10 V, I = −1.9 A, V = −4.5 V
V
DS
D
GS
Q
N−Ch
P−CH
−
−
0.90
0.65
−
−
DRAIN−SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Maximum Continuous Drain–Source Diode Forward Current
I
S
N−Ch
P−CH
−
−
−
−
0.8
A
V
−0.8
V
SD
Drain–Source Diode Forward
Voltage
V
GS
V
GS
= 0 V, I = 0.8 A (Note 2)
N−Ch
P−CH
−
−
0.76
−0.79
1.2
−1.2
S
= 0 V, I = −0.8 A (Note 2)
S
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. R
is the sum of the junction−to−case and case−to−ambient thermal resistance where the case thermal reference is defined as the solder
q
JA
mounting surface of the drain pins. R
is guaranteed by design while R
is determined by the user’s board design. Both devices are
q
q
JC
CA
assumed to be operating and sharing the dissipated heat energy equally.
a. 130°C/W when mounted
b. 140°C/W when mounted
c. 180°C/W when mounted on
a 0.0015 in2 pad of 2 oz.
copper.
2
2
on a 0.125 in pad of 2 oz.
on a 0.005 in pad of 2 oz.
copper.
copper.
Scale 1:1 on letter size paper
2. Pulse Test: Pulse Width < 300 ms, Duty cycle < 2.0 %.
www.onsemi.com
3
FDC6327C
TYPICAL CHARACTERISTICS: N−CHANNEL
10
8
2.4
2.2
2
V
= 4.5 V
GS
3.0 V
2.5 V
V
GS
= 2.0 V
1.8
1.6
1.4
1.2
1
6
2.0 V
1.5 V
4
2.5 V
3.0 V
3.5 V
2
4.5 V
0.8
0
0
2
4
6
8
10
0
1
2
3
4
V
DS
, Drain−Source Voltage (V)
I , Drain Current (A)
D
Figure 1. On−Region Characteristics
Figure 2. On−Resistance Variation with
Drain Current and Gate Voltage
1.6
0.25
0.2
I
V
= 2.7 A
D
I
D
= 1.3 A
1.5
1.4
1.3
1.2
1.1
1
= 4.5 V
GS
0.15
T = 125°C
A
0.1
0.05
0
T = 25°C
A
0.9
0.8
0.7
−50 −25
0
25
50
75 100 125 150
1
2
3
4
5
T , Junction Temperature (°C)
J
V
GS
, Gate to Source Voltage (V)
Figure 3. On−Resistance Variation with
Figure 4. On−Resistance Variation with
Gate−to−Source Voltage
Temperature
10
10
1
V
GS
= 0 V
V
= 5 V
T = −55°C
DS
A
125°C
25°C
8
6
4
2
0
T = 125°C
A
25°C
0.1
−55°C
0.01
0.001
0.0001
0
0.4
0.8
1.2
1.6
0
1
2
3
4
V
GS
, Gate to Source Voltage (V)
V
SD
, Body Diode Forward Voltage (V)
Figure 5. Transfer Characteristics
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature
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4
FDC6327C
TYPICAL CHARACTERISTICS: N−CHANNEL (continued)
5
4
3
2
1
0
500
f = 1 MHz
V
= 5 V
I
D
= 2.7 A
DS
V
GS
= 0 V
400
300
200
100
0
10 V
C
ISS
15 V
C
OSS
RSS
C
0
4
8
12
16
20
0
0.5
1
1.5
2
2.5
3
3.5
4
V
DS
, Drain to Source Voltage (V)
Q , Gate Charge (nC)
g
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance Characteristics
5
10
SINGLE PULSE
100 ms
R
LIMIT
DS(ON)
R
= 180°C/W
q
JA
1 ms
4
3
2
1
T = 25°C
A
10 ms
1
0.1
100 ms
1 s
DC
V
= 4.5 V
GS
SINGLE PULSE
= 180°C/W
R
q
JA
T = 25°C
A
0
0.01
0.1
1
10
100
0.01
0.1
1
10
100
1000
t , Single Pulse Time (s)
1
V
DS
, Drain−Source Voltage (V)
Figure 10. Single Pulse Maximum Power
Dissipation
Figure 9. Maximum Safe Operating Area
www.onsemi.com
5
FDC6327C
TYPICAL CHARACTERISTICS: P−CHANNEL
10
8
2.4
2.2
V
GS
= −4.5 V
−3.5 V
−3.0 V
−2.5 V
V
GS
= −2.0 V
2
1.8
1.6
1.4
1.2
1
6
−2.5 V
−3.0 V
−3.5 V
4
−2.0 V
−4.0 V
−4.5 V
2
−1.5 V
0
0.8
1
0
2
3
4
5
0
2
4
6
8
10
−V , Drain−Source Voltage (V)
DS
−I , Drain Current (A)
D
Figure 11. On−Region Characteristics
Figure 12. On−Resistance Variation with
Drain Current and Gate Voltage
1.5
1.4
1.3
1.2
1.1
1
0.5
0.4
0.3
0.2
0.1
I
V
= −1.9 A
D
I
D
= −1 A
= −4.5 V
GS
T = 125°C
A
T = 25°C
A
0.9
0.8
0.7
0
−50 −25
0
25
50
75 100 125 150
1
2
3
4
5
T , Junction Temperature (°C)
J
−V , Gate to Source Voltage (V)
GS
Figure 13. On−Resistance Variation with
Figure 14. On−Resistance Variation with
Gate−to−Source Voltage
Temperature
10
10
8
V
DS
= −5 V
V
GS
= 0 V
T = −55°C
A
1
25°C
T = 125°C
A
0.1
6
125°C
25°C
4
0.01
0.001
−55°C
2
0.0001
0
0
0
1
2
3
4
0.4
0.8
1.2
1.6
−V , Body Diode Forward Voltage (V)
SD
−V , Gate to Source Voltage (V)
GS
Figure 15. Transfer Characteristics
Figure 16. Body Diode Forward Voltage
Variation with Source Current and Temperature
www.onsemi.com
6
FDC6327C
TYPICAL CHARACTERISTICS: P−CHANNEL (continued)
5
4
3
2
1
0
450
f = 1 MHz
= 0 V
I
D
= −1.9 A
V
= −5.0 V
−15 V
DS
400
350
300
250
200
150
100
V
GS
C
ISS
−10 V
C
OSS
50
0
C
RSS
3
0
4
8
12
16
20
0
0.5
1
1.5
2
2.5
3.5
−V , Drain to Source Voltage (V)
DS
Q , Gate Charge (nC)
g
Figure 17. Gate Charge Characteristics
Figure 18. Capacitance Characteristics
10
1
5
4
3
2
1
100 ms
SINGLE PULSE
R
LIMIT
DS(ON)
1 ms
10 ms
100 ms
1 s
DC
R
= 180°C/W
q
JA
T = 25°C
A
0.1
V
= −4.5 V
GS
SINGLE PULSE
= 180°C/W
R
q
JA
T = 25°C
A
0.01
0.1
0
100
1
10
0.01
0.1
1
10
100
1000
−V , Drain−Source Voltage (V)
DS
Single Pulse Time (s)
Figure 19. Maximum Safe Operating Area
Figure 20. Single Pulse Maximum Power
Dissipation
TYPICAL CHARACTERISTICS: N & P−CHANNEL
1
D = 0.5
0.2
R
R
(t) = r(t) * R
q
JA
= 180°C/W
q
q
JA
JA
0.1
0.1
P(pk)
0.05
t1
0.02
t2
0.01
T − T = P * R (t)
Duty Cycle, D = t / t
q
JA
J
A
SINGLE PULSE
1
2
0.01
0.0001
0.001
0.01
0.1
t , Time (s)
1
10
0
300
1
Figure 21. Transient Thermal Response Curve
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7
FDC6327C
POWERTRENCH is registered trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United
States and/or other countries.
SUPERSOT is a trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other
countries.
www.onsemi.com
8
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TSOT23 6−Lead
CASE 419BL
ISSUE A
1
DATE 31 AUG 2020
SCALE 2:1
GENERIC
MARKING DIAGRAM*
XXX MG
G
1
XXX = Specific Device Code
M
= Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present. Some products
may not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON83292G
TSOT23 6−Lead
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2018
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal
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ADDITIONAL INFORMATION
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SI9137LG
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SI9122E
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