FDC6329L [ONSEMI]

集成式负载开关;
FDC6329L
型号: FDC6329L
厂家: ONSEMI    ONSEMI
描述:

集成式负载开关

开关 驱动 光电二极管 接口集成电路 驱动器
文件: 总6页 (文件大小:311K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Integrated Load Switch  
FDC6329L  
Description  
This device is particularly suited for compact power management  
in portable electronic equipment where 2.5 V to 8 V input and 2.5 A  
output current capability are needed. This load switch integrates  
a small NChannel power MOSFET (Q1) which drives a large  
www.onsemi.com  
TM  
PChannel power MOSFET (Q2) in one tiny SUPERSOT 6  
package.  
Features  
V  
V  
= 0.20 V @ V = 5 V, I = 2.8 A, R = 0.07 W  
(on)  
DROP  
DROP  
IN  
L
TSOT236  
CASE 419BL  
= 0.20 V @ V = 2.5 V, I = 1.9 A, R = 0.105 W  
(on)  
IN  
L
Control MOSFET (Q1) Includes Zener Protection for ESD  
Ruggedness (> 6 kV Human Body Model)  
MARKING DIAGRAM  
High Performance Trench Technology for Extremely Low  
OnResistance  
SUPERSOT6 Package Design Using Copper Lead Frame for  
Superior Thermal and Electrical Capabilities  
This is a PbFree and Halide Free Device  
&E&Y  
&.329&G  
&E  
&Y  
&.  
329  
&G  
= Designates Space  
= Binary Calendar Year Coding Scheme  
= Pin One Dot  
= Specific Device Code  
= Date Code  
V
IN  
,R1  
4
5
3
2
V
, C1  
OUT  
Q2  
ON/OFF  
R1, C1  
V
OUT  
, C1  
ORDERING INFORMATION  
Q1  
Device  
FDC6329L  
Package  
Shipping  
TSOT236  
(PbFree)  
3000 /  
6
R2  
1
Tape & Reel  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
See Application Circuit (Figure 3)  
Figure 1.  
V
DROP  
+
IN  
OUT  
ON/OFF  
Figure 2. Equivalent Circuit  
© Semiconductor Components Industries, LLC, 1998  
1
Publication Order Number:  
June, 2021 Rev. 4  
FDC6329L/D  
FDC6329L  
ABSOLUTE MAXIMUM RATINGS T = 25°C unless otherwise noted  
A
Symbol  
Parameter  
Value  
2.58  
1.58  
2.5  
Unit  
V
V
Input Voltage Range (Note 1)  
On/Off Voltage Range  
IN  
ON/OFF  
V
V
I
L
Load Current Continuous (Note 2)  
Load Current Pulsed  
A
10  
P
Maximum Power Dissipation (Note 2)  
0.7  
W
°C  
kV  
D
T , T  
Operating and Storage Temperature Range  
55 to 150  
6
J
STG  
ESD  
Electrostatic Discharge Rating MILSTD883D Human Body Model (100 pF / 1500 W)  
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality  
should not be assumed, damage may occur and reliability may be affected.  
THERMAL CHARACTERISTICS T = 25°C unless otherwise noted  
A
Symbol  
Parameter  
Thermal Resistance, JunctiontoAmbient (Note 2)  
Thermal Resistance, JunctiontoCase (Note 2)  
Value  
180  
60  
Unit  
°C/W  
°C/W  
R
q
JA  
R
q
JC  
ELECTRICAL CHARACTERISTICS T = 25°C unless otherwise noted  
A
Symbol  
OFF CHARACTERISTICS  
Forward Leakage Current  
ON CHARACTERISTICS (Note 3)  
Parameter  
Test Conditions  
Min  
Typ  
Max  
Unit  
mA  
V
I
FL  
V
V
= 8 V, V  
= 5 V, V  
= 0 V  
1
IN  
ON/OFF  
V
Conduction Voltage  
= 3.3 V, I = 2.8 A  
0.12  
0.14  
0.2  
0.2  
0.07  
0.105  
DROP  
DS(on)  
IN  
ON/OFF  
L
V
= 2.5 V, V  
= 3.3 V, I = 1.9 A  
ON/OFF L  
IN  
R
Q
Static OnResistance  
V
V
V
V
= 5 V, I = 2.5 A  
0.047  
0.073  
W
2
GS  
D
= 2.5 V, I = 2.0 A  
GS  
D
I
L
Load Current  
= 0.2 V, V = 5 V, V = 3.3 V  
ON/OFF  
2.8  
1.9  
A
DROP  
DROP  
IN  
= 0.2 V, V = 2.5 V, V  
= 3.3 V  
IN  
ON/OFF  
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product  
performance may not be indicated by the Electrical Characteristics if operated under different conditions.  
NOTES:  
1. Range of V can be up to 8 V, but R and R must be scaled such that V of Q2 does not exceed 8 V.  
in  
1
2
GS  
2. R  
is the sum of the junctiontocase and casetoambient thermal resistance where the case thermal reference is defined as the solder  
q
JA  
mounting surface of the drain pins. R  
3. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%.  
is guaranteed by design while R  
is determined by the user’s board design.  
q
q
JC  
CA  
www.onsemi.com  
2
 
FDC6329L  
Q2  
IN  
OUT  
C1  
R1  
ON/OFF  
Load  
Ci  
Q1  
Co  
R2  
Figure 3. FDC6329L Load Switch Application  
External Component Recommendation:  
For applications where Co 1 mF.  
For slew rate control, select R2 in the range of 1k 4.7 kW.  
For additional inrush current control, C1 1000 pF can be added.  
Select R1 so that the R1/R2 ratio ranges from 10 100. R1 is required to turn Q2 off.  
TYPICAL CHARACTERISTICS  
0.2  
0.2  
V
V
= 5 V  
IN  
= 1.58 V  
ON/OFF  
T = 125°C  
A
PW = 300 ms, D 2%  
0.15  
0.15  
T = 25°C  
J
T = 125°C  
J
0.1  
0.05  
0
0.1  
0.05  
0
T = 25°C  
J
V
V
= 2.5 V  
IN  
= 1.58 V  
ON/OFF  
PW = 300 ms, D 2%  
0
0.6  
1.2  
1.8  
2.4  
3
0
0.6  
1.2  
1.8 2.4  
3
I (A)  
L
I (A)  
L
Figure 4. Conduction Voltage Drop Variation  
with Load Current  
Figure 5. Conduction Voltage Drop Variation  
with Load Current  
0.2  
0.16  
0.12  
0.08  
I = 1 A  
L
V
= 1.58 V  
ON/OFF  
PW = 300 ms, D 2%  
T = 125°C  
J
25°C  
0.04  
0
1
2
3
4
5
V
IN  
(V)  
Figure 6. OnResistance Variation with Input Voltage  
www.onsemi.com  
3
FDC6329L  
TYPICAL CHARACTERISTICS (continued)  
1
D = 0.5  
0.5  
0.2  
R
R
(t) = r(t) * R  
q
JA  
= See Note 2  
0.2  
0.1  
q
q
JA  
JA  
0.1  
0.05  
P(pk)  
0.05  
t
1
0.02  
0.01  
0.02  
0.01  
t
2
Single Pulse  
T T = P * R (t)  
q
JA  
J
A
Duty Cycle, D = t /t  
1
2
0.005  
0.00001  
0.0001  
0.001  
0.01  
t , Time (s)  
0.1  
1
10  
100 300  
1
Figure 7. Transient Thermal Response Curve  
NOTE: Thermal characterization performed on the conditions described in Note 2.  
Transient thermal response will change depending on the circuit board design.  
SUPERSOT is a trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other  
countries.  
www.onsemi.com  
4
MECHANICAL CASE OUTLINE  
PACKAGE DIMENSIONS  
TSOT23 6Lead  
CASE 419BL  
ISSUE A  
1
DATE 31 AUG 2020  
SCALE 2:1  
GENERIC  
MARKING DIAGRAM*  
XXX MG  
G
1
XXX = Specific Device Code  
M
= Date Code  
G
= PbFree Package  
(Note: Microdot may be in either location)  
*This information is generic. Please refer to  
device data sheet for actual part marking.  
PbFree indicator, “G” or microdot “ G”,  
may or may not be present. Some products  
may not follow the Generic Marking.  
Electronic versions are uncontrolled except when accessed directly from the Document Repository.  
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.  
DOCUMENT NUMBER:  
DESCRIPTION:  
98AON83292G  
TSOT23 6Lead  
PAGE 1 OF 1  
ON Semiconductor and  
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.  
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding  
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically  
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the  
rights of others.  
© Semiconductor Components Industries, LLC, 2018  
www.onsemi.com  
onsemi,  
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates  
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.  
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ADDITIONAL INFORMATION  
TECHNICAL PUBLICATIONS:  
Technical Library: www.onsemi.com/design/resources/technicaldocumentation  
onsemi Website: www.onsemi.com  
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