FDC6561AN [ONSEMI]
双 N 沟道 PowerTrench® MOSFET，逻辑电平，30V，2.5A，95mΩ;
| 型号： | FDC6561AN |
| 厂家： | 
ONSEMI |
| 描述： | 双 N 沟道 PowerTrench® MOSFET，逻辑电平，30V，2.5A，95mΩ |
| 文件： | 总6页 (文件大小：271K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
MOSFET – Dual, N-Channel,
Logic Level, POWERTRENCH)
V
R
MAX
I MAX
D
DSS
DS(ON)
30 V
0.095 W @ 10 V
0.145 W @ 4.5 V
2.5 A
FDC6561AN
General Description
These N−Channel Logic Level MOSFETs are produced using
onsemi’s advanced POWERTRENCH process that has been
especially tailored to minimize the on−state resistance and yet
maintain low gate charge for superior switching performance. These
devices are well suited for all applications where small size is
desireable but especially low cost DC/DC conversion in battery
powered systems.
D2
S1
D1
G2
S2
G1
Pin 1
TSOT23 6−Lead
(SUPERSOT−6)
CASE 419BL
Features
• 2.5 A, 30 V
MARKING DIAGRAM
♦ R
♦ R
= 0.095 W @ V = 10 V
GS
DS(ON)
= 0.145 W @ V = 4.5 V
DS(ON)
GS
• Very Fast Switching. Low Gate Charge (2.1 nC Typical)
• SUPERSOTt−6 Package: Small Footprint (72% Smaller than
Standard SO−8); Low Profile (1 mm Thick)
561 M
1
561 = Device Code
• This is a Pb−Free Device
M
= Date Code
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted)
A
Symbol
Parameter
Drain−Source Voltage
Ratings
Unit
V
PIN ASSIGNMENT
V
DSS
V
GSS
30
20
Gate−Source Voltage
Drain Current
− Continuous
− Continuous
− Pulsed
V
4
5
6
3
2
1
I
D
2.5
A
10
P
D
Maximum Power
Dissipation
(Note 1a)
0.96
0.9
W
(Note 1b)
(Note 1c)
0.7
T , T
Operating and Storage Temperature
Range
−55 to 150
°C
J
STG
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
ORDERING INFORMATION
†
Device
Package
Shipping
FDC6561AN
TSOT23 6−Lead
(SUPERSOT−6)
3000 / Tape
& Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 1999
1
Publication Order Number:
July, 2022 − Rev. 4
FDC6561AN/D
FDC6561AN
THERMAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Symbol
Parameter
Ratings
130
Unit
°C/W
°C/W
R
Thermal Resistance, Junction−to−Ambient (Note 1a)
Thermal Resistance, Junction−to−Case (Note 1)
q
JA
JC
JA
R
q
60
1. R
is the sum of the junction−to−case and case−to−ambient thermal resistance where the case thermal reference is defined as the solder
q
mounting surface of the drain pins. R
is guaranteed by design while R
is determined by the user’s board design.
q
q
CA
JC
2
2
a. 130°C/W on a 0.125 in
pad of 2oz copper.
b. 140°C/W on a 0.005 in
pad of 2oz copper.
c. 180°C/W on a minimum pad.
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
BV
Drain−Source Breakdown Voltage
V
I
= 0 V, I = 250 mA
30
−
−
23.6
−
−
−
V
mV/°C
mA
DSS
GS
D
DBV
/ DT Breakdown Voltage Temp. Coefficient
= 250 mA, Referenced to 25°C
DSS
J
D
I
Zero Gate Voltage Drain Current
V
V
V
V
= 24 V, V = 0 V
−
1
DSS
DS
GS
= 24 V, V = 0 V, T = 55°C
−
−
10
mA
DS
GS
GS
GS
J
I
Gate − Body Leakage, Forward
Gate − Body Leakage, Reverse
= 20 V, V = 0 V
−
−
100
−100
nA
GSSF
DS
I
= −20 V, V = 0 V
−
−
nA
GSSR
DS
ON CHARACTERISTICS (Note 2)
V
Gate Threshold Voltage
/ DT Gate Threshold Voltage Temp. Coefficient
V
I
= V , I = 250 mA
1
−
1.8
−4
3
−
V
mV/°C
W
GS(th)
DS
GS D
DV
= 250 mA, Referenced to 25°C
GS(th)
J
D
R
DS(ON)
Static Drain−Source On−Resistance
V
GS
V
GS
V
GS
V
GS
V
DS
= 10 V, I = 2.5 A
−
0.082
0.122
0.113
−
0.095
0.152
0.145
−
D
= 10 V, I = 2.5 A, T = 125°C
−
D
J
= 4.5 V, I = 2.0 A
−
D
I
On−State Drain Current
= 10 V, V = 5 V
10
−
A
S
D(on)
DS
g
FS
Forward Transconductance
= 5 V, I = 2.5 A
5
−
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
DS
= 15 V, V = 0 V, f = 1.0 MHz
−
−
−
220
50
−
−
−
pF
pF
pF
iss
GS
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
25
SWITCHING CHARACTERISTICS (Note 2)
t
Turn − On Delay Time
Turn − On Rise Time
Turn − Off Delay Time
Turn − Off Fall Time
Total Gate Charge
V
R
= 5 V, I = 1 A, V = 10 V,
−
−
−
−
−
−
−
6
12
18
22
6
ns
ns
D(on)
DD
D
GS
= 6 W
GEN
t
r
10
12
2
t
ns
D(off)
t
f
ns
Q
g
V
DS
= 15 V, I = 2.5 A, V = 5 V
2.3
0.7
0.9
3.2
1
nC
nC
nC
D
GS
Q
gs
Q
gd
Gate−Source Charge
Gate−Drain Charge
1.3
DRAIN−SOURCE DIODE CHARACTERISTICS
I
Continuous Source Diode Current
−
−
−
0.75
1.2
A
V
S
V
SD
Drain−Source Diode Forward Voltage
V
GS
= 0 V, I = 0.75 A (Note 2)
0.78
S
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%.
www.onsemi.com
2
FDC6561AN
TYPICAL ELECTRICAL CHARACTERISTICS
2
10
8
V
= 10 V
6.0 V
GS
1.8
1.6
1.4
1.2
1
4.5 V
4.0 V
V
GS
= 4.0 V
6
4.5 V
5.0 V
3.5 V
4
6.0 V
10 V
3.0 V
2
7.0 V
0
0.8
0
2
4
6
8
10
0
1
2
3
4
V
DS
, DRAIN−SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 1. On Region Characteristics
Figure 2. On−Resistance Variation with
Drain Current and Gate Voltage
1.6
1.4
1.2
1
0.3
I
V
= 2.5 A
I = 1.3 A
D
D
= 10 V
GS
0.25
0.2
T = 125°C
A
0.15
0.1
0.8
T = 25°C
A
0.6
−50 −25
0.05
0
25
50
75 100 125 150
2
4
6
8
10
T , JUNCTION TEMPERATURE (°C)
J
V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 3. On−Resistance Variation with
Temperature
Figure 4. On−Resistance Variation with
Gate−to−Source Voltage
10
10
V
GS
= 0 V
V
DS
= 5 V
T = −55°C
A
125°C
25°C
8
6
4
2
0
1
0.1
T = 125°C
A
25°C
−55°C
0.01
0.001
0.0001
1
2
3
4
5
6
0
0.2
0.4
0.6
0.8
1
1.2
1.4
V
GS
, GATE TO SOURCE VOLTAGE (V)
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Body Diode Forward Voltage
Variation with Source Current and Temperature
www.onsemi.com
3
FDC6561AN
TYPICAL ELECTRICAL CHARACTERISTICS (continued)
500
200
10
8
I
D
= 2.5 A
C
iss
V
DS
= 5 V
15 V
6
4
2
100
50
10 V
Coss
Crss
20
10
f = 1 MHz
= 0 V
V
GS
0
0
1
2
3
4
0.1
0.5
1
2
5
10
30
Q , GATE CHARGE (nC)
g
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance Characteristics
30
5
SINGLE PULSE
100 ms
10
R
= 180°C/W
q
JA
RDS(ON)
LIMIT
4
3
2
1
0
T = 25°C
A
1 ms
10 ms
100 ms
1 s
3
1
0.3
0.1
DC
3
V
GS
= 10 V
SINGLE PULSE
R
q
JA
= 180°C/W
0.03
0.01
T = 25°C
A
0.1
0.3
1
10
30 50
0.01
0.1
1
10
100 300
V
DS
, DRAIN−SOURCE VOLTAGE (V)
SINGLE PULSE TIME (s)
Figure 9. Maximum Safe Operating Area
Figure 10. Single Pulse Maximum Power
Dissipation
1
D = 0.5
0.5
R
R
(t) = r(t) x R
= 180°C/W
q
q
q
JA
JA
JA
0.2
0.2
0.1
0.1
P(pk)
0.05
0.05
0.02
0.01
t1
t 2
T − T = P x R (t)
J
Duty Cycle, D = t / t
0.02
0.01
q
JA
A
Single Pulse
1
2
0.0001
0.001
0.01
0.1
t , TIME (s)
1
10
100
300
1
Figure 11. Transient Thermal Response Curve
(Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.)
POWERTRENCH is registered trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United
States and/or other countries.
SUPERSOT is trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other
countries.
www.onsemi.com
4
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TSOT23 6−Lead
CASE 419BL
ISSUE A
1
DATE 31 AUG 2020
SCALE 2:1
GENERIC
MARKING DIAGRAM*
XXX MG
G
1
XXX = Specific Device Code
M
= Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present. Some products
may not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON83292G
TSOT23 6−Lead
PAGE 1 OF 1
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© Semiconductor Components Industries, LLC, 2018
www.onsemi.com
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相关型号：
FDC6561AND87Z
Small Signal Field-Effect Transistor, 2.5A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6
FAIRCHILD
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