FDC855N [ONSEMI]
N 沟道，PowerTrench® MOSFET，逻辑电平，30V，6.1A，27 mΩ;
| 型号： | FDC855N |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道，PowerTrench® MOSFET，逻辑电平，30V，6.1A，27 mΩ |
| 文件： | 总8页 (文件大小：394K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
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January 2008
FDC855N
tm
®
Single N-Channel, Logic Level, PowerTrench MOSFET
30V, 6.1A, 27mΩ
Features
General Description
Max rDS(on) = 27mΩ at VGS = 10V, ID = 6.1A
This N-Channel Logic Level MOSFET is an efficient solution for
low voltage and battery powered applications. Utilizing Fairchild
Semiconductor’s advanced PowerTrench® process, this device
possesses minimized on-state resistance to optimize the power
consumption. They are ideal for applications where in-line power
loss is critical.
Max rDS(on) = 36mΩ at VGS = 4.5V, ID = 5.3A
SuperSOTTM -6 package: small footprint (72% smaller than
standard SO-8; low profile (1mm thick).
RoHS Compliant
Application
Power Management in Notebook, Hard Disk Drive
S
D
D
D
D
D
S
D
SuperSOTTM-6
G
D
D
G
Pin 1
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDS
VGS
Parameter
Ratings
Units
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
30
±20
V
V
TA = 25°C
(Note 1a)
6.1
ID
A
20
Power Dissipation (Steady State)
Power Dissipation (Steady State)
(Note 1a)
(Note 1b)
1.6
PD
W
0.8
TJ, TSTG
Operating and Storage Junction Temperature Range
-55 to +150
°C
Thermal Characteristics
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
(Note 1)
30
78
°C/W
(Note 1a)
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
7”
Tape Width
8 mm
Quantity
.855
FDC855N
SuperSOT-6
3000 units
1
©2008 Fairchild Semiconductor Corporation
FDC855N Rev.C
www.fairchildsemi.com
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250µA, VGS = 0V
30
V
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
ID = 250µA, referenced to 25°C
24
mV/°C
VGS = 0V, VDS = 24V,
TC = 125°C
1
IDSS
IGSS
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
µA
250
±100
VGS = ±20V, VDS = 0V
nA
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250µA
1.0
2.0
-6
3.0
V
∆VGS(th)
∆TJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = 250µA, referenced to 25°C
mV/°C
VGS = 10V, ID = 6.1A
20.7
28.2
30.1
20
27.0
36.0
39.3
rDS(on)
gFS
Static Drain to Source On Resistance
Forward Transconductance
VGS = 4.5V, ID = 5.3A
mΩ
VGS = 10V, ID = 6.1A, TJ =125°C
VDD = 10V, ID = 6.1A
S
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
493
108
62
655
145
95
pF
pF
pF
Ω
VDS = 15V, VGS = 0V,
f = 1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
f = 1MHz
1.0
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
6
12
10
23
10
13
7.0
ns
ns
VDD = 15V, ID = 6.1A,
VGS = 10V, RGEN = 6Ω
2
Turn-Off Delay Time
Fall Time
14
2
ns
ns
Qg
Total Gate Charge at 10V
Total Gate Charge at 5V
Gate to Source Charge
Gate to Drain “Miller” Charge
V GS= 0 V t o 1 0 V
9.2
4.9
1.7
3.1
nC
nC
nC
nC
VDD = 15V,
ID = 6.1A
Qg
VGS = 0V to 5V
Qgs
Qgd
Drain-Source Diode Characteristics
VSD
trr
Source to Drain Diode Forward Voltage
Reverse Recovery Time
VGS = 0V, IS = 1.3A (Note 2)
0.80
17
6
1.2
31
12
V
ns
nC
IF = 6.1A, di/dt = 100A/µs
Qrr
Reverse Recovery Charge
Notes:
1: R
is the sum of the junction-to-case and case-to- ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
θJA
R
is guaranteed by design while R
is determined by the user’s board design.
θCA
θJC
a. 78°C/W when mounted on a
b. 156°C/W when mounted on a
minimum pad of 2 oz copper.
2
1 in pad of 2 oz copper.
2: Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.
www.fairchildsemi.com
©2008 Fairchild Semiconductor Corporation
FDC855N Rev.C
2
Typical Characteristics TJ = 25°C unless otherwise noted
20
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
VGS = 4.5V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
VGS = 4.0V
16
VGS = 3.5V
VGS = 10V
VGS = 6V
VGS = 4.0V
12
8
VGS = 3.5V
VGS = 4.5V
4
0
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
VGS = 10V
16
VGS = 6V
0
1
2
3
4
0
4
8
12
20
VDS, DRAIN TO SOURCE VOLTAGE (V)
ID, DRAIN CURRENT(A)
Figure 1. On-Region Characteristics
Figure2. N o r m a l i z e d O n - R e s i s ta n c e
vs Drain Current and Gate Voltage
1.6
60
ID = 6.1A
GS = 10V
PULSE DURATION = 300µs
DUTY CYCLE = 2%MAX
V
1.4
1.2
1.0
0.8
0.6
50
40
30
20
ID = 6.1A
TJ = 125oC
TJ = 25oC
-75 -50 -25
0
25 50 75 100 125 150
3
4
5
6
7
8
9
10
TJ, JUNCTION TEMPERATURE (oC)
VGS, GATE TO SOURCE VOLTAGE (V)
F i gu re 3 . N orma li zed On - Res is ta nc e
vs Junction Temperature
Figure4. On-Resistance vs Gate to
Source Voltage
20
20
10
VGS = 0V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
16
VDS = 10V
1
12
TJ = 150oC
TJ = 25oC
0.1
8
TJ = 150oC
TJ = 25oC
TJ = -55oC
0.01
TJ = -55oC
4
0
0.001
0.2
0.4
0.6
0.8
1.0
1.2
1
2
3
4
5
VSD, BODY DIODE FORWARD VOLTAGE (V)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure6. Source to Drain Diode
Forward Voltage vs Source Current
www.fairchildsemi.com
©2008 Fairchild Semiconductor Corporation
FDC855N Rev.C
3
Typical Characteristics TJ = 25°C unless otherwise noted
10
1000
ID = 6.1A
Ciss
8
VDD = 15V
Coss
6
VDD = 10V
VDD = 20V
100
20
4
2
0
Crss
f = 1MHz
= 0V
V
GS
0
3
6
9
12
0.1
1
10
30
VDS, DRAIN TO SOURCE VOLTAGE (V)
Q , GATE CHARGE(nC)
g
Figure 7. Gate Charge Characteristics
Figure8. C a p a c i t a n c e v s D r a i n
to Source Voltage
30
100
10
VGS = 10V
100µs
SINGLE PULSE
RθJA = 156oC/W
10
T
A = 25oC
1ms
1
10ms
THIS AREA IS
LIMITED BY r
100ms
DS(on)
SINGLE PULSE
TJ = MAX RATED
RθJA = 156oC/W
0.1
0.01
1s
1
DC
T
A = 25oC
0.5
10-3
10-2
10-1
t, PULSE WIDTH (s)
1
10
0.01
0.1
1
10
100
100
1000
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 9. Forward Bias Safe
Operating Area
Figure10. Single Pulse Maximum
Power Dissipation
2
1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
P
DM
0.1
t
1
t
2
NOTES:
DUTY FACTOR: D = t /t
SINGLE PULSE
1
2
+ T
R
θJA = 156oC/W
PEAK T = P
J
x Z
x R
DM
θJA
θJA A
0.01
10-3
10-2
10-1
1
10
100
1000
t, RECTANGULAR PULSE DURATION (sec)
Figure 11. Transient Thermal Response Curve
www.fairchildsemi.com
©2008 Fairchild Semiconductor Corporation
FDC855N Rev.C
4
Dimensional Outline and Pad Layout
www.fairchildsemi.com
©2008 Fairchild Semiconductor Corporation
FDC855N Rev.C
5
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global
subsidianries, and is not intended to be an exhaustive list of all such trademarks.
ACEx®
FPS™
PDP-SPM™
SupreMOS™
SyncFET™
®
The Power Franchise®
Build it Now™
CorePLUS™
CROSSVOLT™
CTL™
Current Transfer Logic™
EcoSPARK®
FRFET®
Power220®
Global Power ResourceSM
Green FPS™
Green FPS™ e-Series™
GTO™
i-Lo™
IntelliMAX™
ISOPLANAR™
MegaBuck™
MICROCOUPLER™
MicroFET™
POWEREDGE®
Power-SPM™
PowerTrench®
Programmable Active Droop™
QFET®
TinyBoost™
TinyBuck™
TinyLogic®
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
µSerDes™
UHC®
EZSWITCH™ *
QS™
™
QT Optoelectronics™
Quiet Series™
RapidConfigure™
SMART START™
SPM®
STEALTH™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
®
Fairchild®
Fairchild Semiconductor®
FACT Quiet Series™
FACT®
MicroPak™
MillerDrive™
Motion-SPM™
OPTOLOGIC®
FAST®
Ultra FRFET™
UniFET™
VCX™
FastvCore™
OPTOPLANAR®
®
FlashWriter®
*
tm
* EZSWITCH™ and FlashWriter® are trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
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As used herein:
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(a) are intended for surgical implant into the body or (b)
support or sustain life, and (c) whose failure to perform when
properly used in accordance with instructions for use provided
in the labeling, can be reasonably expected to result in a
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2. A critical component in any component of a life support, device
or system whose failure to perform can be reasonably
expected to cause the failure of the life support device or
system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
This datasheet contains the design specifications for product development.
Specifications may change in any manner without notice.
Advance Information
Formative or In Design
This datasheet contains preliminary data; supplementary data will be pub-
lished at a later date. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve design.
Preliminary
First Production
Full Production
Not In Production
This datasheet contains final specifications. Fairchild Semiconductor reserves
the right to make changes at any time without notice to improve design.
No Identification Needed
Obsolete
This datasheet contains specifications on a product that has been discontin-
ued by Fairchild Semiconductor. The datasheet is printed for reference infor-
mation only.
Rev. I33
©2008 Fairchild Semiconductor Corporation
FDC855N Rev.C
www.fairchildsemi.com
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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