FDC86244 [ONSEMI]
N 沟道，屏蔽门极，Power Trench® MOSFET，150 V，2.3 A，144 mΩ;
| 型号： | FDC86244 |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道，屏蔽门极，Power Trench® MOSFET，150 V，2.3 A，144 mΩ |
| 文件： | 总8页 (文件大小：531K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MOSFET – N-Channel,
Shielded Gate,
POWERTRENCH)
150 V, 2.3 A, 144 mW
FDC86244
www.onsemi.com
General Description
This N−Channel MOSFET is produced using ON Semiconductor’s
advanced POWERTRENCH process that incorporates Shielded Gate
technology. This process has been optimized for r , switching
DS(on)
performance and ruggedness.
TSOT23 6−Lead
Features
CASE 419BL
• Shielded Gate MOSFET Technology
• Max r
• Max r
= 144 mW at V = 10 V, I = 2.3 A
GS D
DS(on)
= 188 mW at V = 6 V, I = 1.9 A
MARKING DIAGRAM
DS(on)
GS
D
• High Performance Trench Technology for Extremely Low r
• High Power and Current Handling Capability in a Widely Used
Surface Mount Package
DS(on)
&E&Y
&.244&G
• Fast Switching Speed
• 100% UIL Tested
1
XXX = Specific Device Code
&E = Space Designator
&Y = Year of Production
• This Device is Pb−Free, Halogen Free/BFR Free and is RoHS
Compliant
&.
G
= Pin One Identifier
= Pb−Free Package
Applications
• Load Switch
• Synchronous Rectifier
• Primary Switch
PINOUT
S
D
D
G
D
D
4
3
2
1
5
6
SuperSOTTM−6
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2010
1
Publication Order Number:
March, 2020 − Rev. 2
FDC86244/D
FDC86244
MOSFET MAXIMUM RATINGS TA = 25°C unless otherwise noted
Symbol Parameter
Ratings
150
Units
V
DS
V
GS
Drain to Source Voltage
Gate to Source Voltage
V
V
A
20
I
D
Drain Current
− Continuous (Note 1a)
2.3
10
− Pulsed
E
Single Pulse Avalanche Energy (Note 3)
Power Dissipation (Note 1a)
12
1.6
mJ
W
AS
P
D
Power Dissipation (Note 1b)
0.8
T , T
Operating and Storage Junction Temperature Range
−55 to +150
°C
J
STG
THERMAL CHARACTERISTICS
Symbol
Parameter
Ratings
Units
°C/W
RθJC
RθJA
Thermal Resistance, Junction to Case
30
78
Thermal Resistance, Junction to Ambient (Note 1a)
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Package
Reel Size
Tape Width
8 mm
Quantity
0.244
FDC86244
SSOT−6
7”
3000 Units
www.onsemi.com
2
FDC86244
ELECTRICAL CHARACTERISTICS TJ = 25°C unless otherwise noted
Symbol
OFF CHARACTERISTICS
BV
Drain to Source Breakdown Voltage
Parameter
Test Conditions
Min
Typ
Max
Units
I
I
= 250 mA, V = 0 V
GS
150
V
D
DSS
DBV
= 250 mA, referenced to 25 °C
Breakdown Voltage Temperature
Coefficient
103
mV/°C
DSS
D
DT
J
μA
I
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
V
V
= 120 V, V = 0 V
1
DSS
DS
GS
I
=
20 V, V = 0 V
100
nA
GSS
GS
DS
ON CHARACTERISTICS
Gate to Source Threshold Voltage
V
I
= V , I = 250 mA
DS D
V
GS(th)
2.0
2.5
4.0
V
GS
Gate to Source Threshold Voltage
Temperature Coefficient
= 250 mA, referenced to 25 °C
−9
mV/°C
DV
D
GS(th)
DT
J
r
Static Drain to Source On Resistance
mW
V
V
V
V
= 10 V, I = 2.3 A
113
128
214
6
144
188
273
DS(on)
GS
D
= 6 V, I = 1.9 A
GS
GS
DD
D
= 10 V, I = 2.3 A, T = 125 °C
D
J
g
FS
Forward Transconductance
= 5 V, I = 2.3 A
S
D
DYNAMIC CHARACTERISTICS
V
= 75 V, V = 0 V,
C
Input Capacitance
260
32
345
45
5
pF
pF
pF
W
DS
GS
iss
f = 1 MHz
C
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
oss
C
1.7
1.3
rss
R
g
SWITCHING CHARACTERISTICS
V
= 75 V, I = 2.3 A, V = 10 V, R
= 6 W
t
Turn−On Delay Time
Rise Time
4.7
1.4
10
10
10
20
10
6
ns
ns
DD
D
GS
GEN
d(on)
t
r
t
Turn−Off Delay Time
Fall Time
ns
d(off)
t
f
3.1
4.2
2.4
1.0
1.0
ns
Q
V
DD
= 75 V
Total Gate Charge
Total Gate Charge
Total Gate Charge
Gate to Drain “Miller” Charge
V
V
I
= 0 V to 10 V
= 0 V to 5 V
nC
nC
nC
nC
g(TOT)
GS
4
GS
= 2.3 A
Q
D
gs
Q
gd
DRAIN−SOURCE DIODE CHARACTERISTICS
V
Source to Drain Diode Forward Voltage
Reverse Recovery Time
V
= 0 V, I = 2.3 A (Note 2)
0.8
45
33
1.3
73
53
V
SD
GS
S
I = 2.3 A, di/dt = 100 A/ms
F
t
ns
nC
rr
Q
Reverse Recovery Charge
rr
1. R
is the sum of the junction−to−case and case−to−ambient thermal resistance where the case thermal reference is defined as the solder
θ
JA
mounting surface of the drain pins. R
is guaranteed by design while R
is determined by the user’s board design.
θ
θ
CA
JC
b. 175 °C/W when mounted on
a minimum pad of 2 oz copper
a. 78 °C/W when mounted on
2
a 1 in pad of 2 oz copper
2. Pulse Test: Pulse Width < 300 ms, Duty cycle < 2.0 %.
3. Starting TJ = 25°C, L = 1.0 mH, IAS = 5.0 A, VDD = 135 V, VGS = 10 V.
www.onsemi.com
3
FDC86244
TYPICAL CHARACTERISTICS T = 25°C Unless Otherwise Noted
J
5
10
8
VGS = 10 V
VGS = 6 V
VGS = 4 V
VGS = 4.5 V
4
3
2
1
0
VGS = 5 V
VGS = 5 V
6
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
VGS = 4.5 V
4
VGS = 6 V
2
VGS = 4 V
VGS = 10 V
PULSE DURATION = 80ms
DUTY CYCLE = 0.5% MAX
0
0
1
2
3
4
5
0
2
4
6
8
10
ID, DRAIN CURRENT (A)
V
DS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Normalized On−Resistance
vs Drain Current and Gate Voltage
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
500
400
300
200
100
0
ID = 2.3 A
VGS = 10 V
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
ID = 2.3 A
TJ = 125 o
C
TJ = 25 o
C
−75 −50 −25
0
25 50 75 100 125 150
2
4
6
8
10
TJ, JUNCTION TEMPERATUREoC( )
V
GS, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On− Resistance
Figure 4. On−Resistance vs Gate to
vs Junction Temperature
Source Voltage
10
8
10
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
VGS = 0 V
1
0.1
VDS = 5 V
TJ = 150oC
6
T
J = 25 oC
T
J = 150oC
4
TJ = 25 oC
TJ = −55oC
0.01
2
T
J = −55oC
0
0.001
1
2
3
4
5
6
0.2
0.4
0.6
0.8
1.0
1.2
VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
www.onsemi.com
4
FDC86244
TYPICAL CHARACTERISTICS T = 25°C Unless Otherwise Noted (continued)
J
10
8
400
ID = 2.3 A
VDD = 50 V
Ciss
100
VDD = 75 V
6
Coss
VDD = 100 V
4
10
2
f = 1 MHz
VGS = 0 V
Crss
1
0
0.1
1
10
100
0
1
2
3
4
5
VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs Drain
to Source Voltage
7
6
5
4
3
2
1
2.5
2.0
1.5
1.0
0.5
0.0
VGS = 10 V
TJ = 25oC
VGS = 6 V
TJ = 100oC
TJ = 125oC
R
qJA = 78oC/W
25
50
75
100
125
150
0.01
0.1
1
2
tAV, TIME IN AVALANCHE (ms)
T
A, AMBIENT TEMPERATUREo(C)
Figure 9. Unclamped Inductive
Switching Capability
Figure 10. Maximum Continuous Drain
Current vs Ambient Temperature
1000
100
10
20
10
SINGLE PULSE
qJA = 175oC/W
A = 25oC
R
100 us
T
1
1 ms
THIS AREA IS
LIMITED BY r
10 ms
0.1
DS(on)
100 ms
SINGLE PULSE
TJ = MAX RATED
1 s
0.01
0.001
10 s
R
qJA = 175 oC/W
DC
1
T
A = 25oC
0.5
10−4
10−3
10−2
t, PULSE WIDTH (sec)
10−1
1
10
100 1000
0.1
1
10
100
500
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe Operating Area
Figure 12. Single Pulse Maximum
Power Dissipation
www.onsemi.com
5
FDC86244
TYPICAL CHARACTERISTICS T = 25°C unless otherwise noted (continued)
J
2
1
DUTY CYCLE−DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
0.1
0.01
P
DM
t
1
t
2
NOTES:
DUTY FACTOR: D = t /t
SINGLE PULSE
qJA = 175 oC/W
1
2
R
PEAK T = P x Z
x R
+ T
qJA A
J
DM
qJA
0.001
10−4
10−3
10−2
10−1
t, RECTANGULAR PULSE DURATION (sec)
11
0
100
1000
Figure 13. Junction−to−Ambient Transient Thermal Response Curve
www.onsemi.com
6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TSOT23 6−Lead
CASE 419BL
ISSUE A
1
DATE 31 AUG 2020
SCALE 2:1
GENERIC
MARKING DIAGRAM*
XXX MG
G
1
XXX = Specific Device Code
M
= Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present. Some products
may not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON83292G
TSOT23 6−Lead
PAGE 1 OF 1
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