FDD4243 [ONSEMI]
P 沟道，PowerTrench® MOSFET，-40V，-14A，44mΩ;
| 型号： | FDD4243 |
| 厂家： | 
ONSEMI |
| 描述： | P 沟道，PowerTrench® MOSFET，-40V，-14A，44mΩ PC 脉冲 晶体管 |
| 文件： | 总7页 (文件大小：410K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
+
MOSFET – P-Channel,
POWERTRENCH)
D
G
S
-40 V, -14 A, 44 mW
DPAK3 (TO−252 3 LD)
CASE 369AS
FDD4243, FDD4243-G
S
General Description
This P−Channel MOSFET has been produced using onsemi’s
G
proprietary POWERTRENCH technology to deliver low R
and
DS(on)
optimized Bvdss capability to offer superior performance benefit in
the applications.
Features
D
• Max R
• Max R
= 44 mW at V = −10 V, I = −6.7 A
GS D
DS(on)
= 64 mW at V = −4.5 V, I = −5.5 A
P−Channel MOSFET
DS(on)
GS
D
• High Performance Trench Technology for Extremely Low r
• Pb−Free, Halide Free and RoHS Compliant
DS(on)
MARKING DIAGRAM
ABSOLUTE MAXIMUM RATINGS
T
= 25°C unless otherwise noted.
$Y&Z&3&K
FDD
4243
C
Symbol
Parameter
Drain to Source Voltage
Ratings
−40
Unit
V
V
V
DS
GS
Gate to Source Voltage
Drain Current
− Continuous (Package Limited) T = 25°C
− Continuous (Silicon Limited)
(Note 1)
20
V
I
A
D
−14
−24
C
FDD4243
$Y
&Z
&3
&K
= Specific Device Code
= onsemi Logo
= Assembly Plant Code
= 3−Digit Date Code
T = 25°C
C
− Continuous
(Note 1a)
− Pulsed
T = 25°C
A
−6.7
−60
= 2−Digits Lot Run Traceability Code
E
Single Pulse Avalanche Energy (Note 3)
Power dissipation
84
AS
P
W
ORDERING INFORMATION
D
− T = 25°C
42
3
C
− (Note 1a)
†
Device
Package
Shipping
T ,
STG
Operating and Storage Junction
Temperature Range
−55 to
+150
°C
J
DPAK3 (TO−252 3LD)
(Pb−Free/
FDD4243
2500 /
Tape & Reel
T
Halide Free)
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
DPAK3 (TO−252 3LD)
(Pb−Free/
FDD4243−G
2500 /
Tape & Reel
Halide Free)
THERMAL CHARACTERISTICS
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Symbol
Parameter
Ratings
Unit
R
Thermal Resistance,
Junction to Case
3.0
°C/W
q
JC
R
Thermal Resistance,
Junction to Ambient (Note 1a)
40
°C/W
q
JA
© Semiconductor Components Industries, LLC, 2007
1
Publication Order Number:
March, 2022 − Rev. 2
FDD4243/D
FDD4243, FDD4243−G
ELECTRICAL CHARACTERISTICS T = 25°C unless otherwise noted.
J
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
BV
Drain to Source Breakdown Voltage
I
I
= −250 mA, V = 0 V
−40
−
−
−
V
DSS
D
GS
Breakdown Voltage Temperature
Coefficient
= −250 mA,
Referenced to 25°C
−
−32
mV/°C
DBVDSS
DTJ
D
I
Zero Gate Voltage Drain Current
V
V
= −32 V, V = 0 V
−
−
−
−
−1
mA
DSS
DS
DS
GS
= −32 V, V = 0 V, T = 125°C
−100
GS
J
I
Gate to Source Leakage Current
V
GS
=
20 V, V = 0 V
100
nA
GSS
DS
ON CHARACTERISTICS (Note 2)
V
Gate to Source Threshold Voltage
V
I
= V , I = −250 mA
−1.4
−1.6
−3.0
V
GS(th)
DS
GS D
Gate to Source Threshold Voltage
Temperature Coefficient
= −250 mA, Referenced to 25°C
−
4.7
−
mV/°C
DVGS(th)
DTJ
D
R
Drain to Source On Resistance
I
I
I
= −6.7 A, V = −10 V,
−
−
−
−
36
48
53
16
44
64
69
−
mW
DS(on)
D
D
D
GS
= −5.5 A, V = −4.5 V
GS
= −6.7 A, V = −10 V, T = 125°C
GS
J
g
FS
Forward Transconductance
V
= −5 V, I = −6.7 A
S
DS
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
= −20 V, V = 0 V, f = 1.0 MHz
−
−
−
−
1165
165
90
1550
220
135
−
pF
iss
DS
GS
C
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
oss
C
rss
R
f = 1 MHz
4
W
g
SWITCHING CHARACTERISTICS (Note 2)
t
Turn–On Delay Time
Rise Time
V
= −20 V, I = −6.7 A,
−
−
−
−
−
−
−
6
15
22
7
12
26
35
14
29
−
ns
ns
d(on)
DD
GS
D
V
= −10 V, R
= 6 W
GEN
t
r
t
Turn–Off Delay Time
Fall Time
ns
d(off)
t
f
ns
Q
Total Gate Charge at 10 V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
V
DS
V
GS
= −20 V, I = −6.7 A,
21
3.4
4
nC
nC
nC
g(TOT)
D
= −10 V
Q
Q
gs
−
gd
DRAIN−SOURCE DIODE CHARACTERISTICS
V
Source to Drain Diode Forward Voltage
Reverse Recovery Time
V
= 0 V, I = −6.7 A (Note 2)
−
−
−
0.86
29
1.2
43
44
V
SD
GS
S
t
I = −6.7 A, di/dt = 100 A/ms
F
ns
nC
rr
Q
Reverse Recovery Charge
30
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. R
is the sum of the junction−to−case and case−to−ambient thermal resistance where the case thermal reference is defined as the solder
q
JA
mounting surface of the drain pins. R
is guaranteed by design while R
is determined by the user’s board design.
q
q
JC
CA
2
a. 40°C/W when mounted on a 1 in pad of 2 oz copper.
b. 96°C/W when mounted on a minimum pad.
2. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
3. Starting T = 25°C, L = 3 mH, I = 7.5 A, V = 40 V, V = 10 V
J
AS
DD
GS
www.onsemi.com
2
FDD4243, FDD4243−G
TYPICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
60
50
40
30
20
10
0
3.5
V
V
V
V
= −3.0 V
= −4 V
= −4.5 V
= −5 V
GS
GS
V
= −10 V
= −6 V
3.0
2.5
2.0
1.5
1.0
0.5
GS
GS
V
= −4.5 V
= −4 V
V
GS
GS
GS
V
= −5 V
V
= −6 V
GS
GS
V
GS
Pulse Duration = 80 ms
Duty Cycle = 0.5% Max
V
GS
= −3.0 V
V
= −10 V
GS
Pulse Duration = 80 ms
Duty Cycle = 0.5% Max
0
1
2
3
0
4
5
10
20
30
40
50
60
−I , Drain Current (A)
D
−V , Drain to Source Voltage (V)
DS
Figure 1. On Region Characteristics
Figure 2. Normalized On−Resistance
vs. Drain Current and Gate Voltage
1.8
1.6
1.4
1.2
1.0
0.8
0.6
120
100
80
Pulse Duration = 80 ms
Duty Cycle = 0.5% Max
I
V
= −6.7 A
D
I
D
= −6.7 A
= −10 V
GS
T = 125°C
J
60
T = 25°C
J
40
20
−50 −25
0
25
50
75
100 125 150
2
3
4
5
6
7
8
9
10
T , Junction Temperature (°C)
J
−V , Gate to Source Voltage (V)
GS
Figure 3. Normalized On−Resistance vs. Junction
Figure 4. On−Resistance vs. Gate to Source
Temperature
Voltage
60
30
10
Pulse Duration = 80 ms
Duty Cycle = 0.5% Max
V
GS
= 0 V
50
40
30
20
10
0
T = 150°C
J
T = 150°C
J
T = 25°C
J
T = 25°C
J
1
T = −55°C
J
T = −55°C
J
0.1
0.4
0.6
0.8
1.0
1.2
2
3
5
6
1
4
−V , Body Diode Forward Voltage (V)
SD
−V , Gate to Source Voltage (V)
GS
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode Forward
Voltage vs. Source Current
www.onsemi.com
3
FDD4243, FDD4243−G
TYPICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (continued)
J
10
8
3000
I
D
= −6.7 A
V
DD
= −10 V
1000
C
C
iss
V
= −20 V
DD
6
V
DD
= −30 V
4
oss
2
100
50
f = 1 MHz
= 0 V
C
rss
V
GS
0
4
0
8
12
16
20
24
0.1
1
10
30
Q , Gate Charge (nC)
g
−V , Drain to Source Voltage (V)
DS
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs. Drain to Source
Voltage
10
8
25
20
15
10
5
V
GS
= −10 V
6
T = 25°C
J
4
Limited by Package
T = 125°C
J
V
GS
= −4.5 V
2
1
R
= 3.0°C/W
q
JA
0
25
50
75
100
125
150
0.01
0.1
1
10
30
T , Case Temperature (°C)
C
t , Time in Avalanche (ms)
AV
Figure 9. Unclamped Inductive Switching
Capability
Figure 10. Maximum Continuous Drain Current
vs. Case Temperature
100
10
10000
For temperatures
above 25C derate peak
current as follows:
V
GS
= −10 V
100 ms
150 * TC
1000
Ǹ
I = I
25 ƪ ƫ
125
1 ms
10 ms
T
C
= 25°C
1
Operation in this
area may be
Single Pulse
T = Max Rated
100
30
100 ms
J
Single Pulse
limited by r
T
C
= 25°C
DS(on)
0.1
0.5
−5
−4
−3
−2
−1
0
1
100
10
10
10
10
10
10
10
1
10
−V , Drain to Source Voltage (V)
DS
t, Pulse Width (s)
Figure 12. Single Pulse Maximum Power
Dissipation
Figure 11. Forward Bias Safe Operating Area
www.onsemi.com
4
FDD4243, FDD4243−G
TYPICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (continued)
J
2
1
Duty Cycle−Descending Order
D = 0.5
0.2
0.1
P
0.05
0.02
0.01
DM
0.1
t
1
t
2
NOTES:
Duty Factor D = t / t
0.01
1
2
Single Pulse
PEAK T = P
× Z
× R
+ T
JC C
q
q
J
DM
JC
0.003
−5
−4
−3
−2
−1
0
1
10
10
10
10
10
10
10
t, Rectangular Pulse Duration (s)
Figure 13. Transient Thermal Response Curve
POWERTRENCH is a registered trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United
States and/or other countries.
www.onsemi.com
5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
DPAK3 (TO−252 3 LD)
CASE 369AS
ISSUE A
DATE 28 SEP 2022
GENERIC
MARKING DIAGRAM*
XXXXXX
XXXXXX
AYWWZZ
XXXX = Specific Device Code
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
A
Y
= Assembly Location
= Year
WW = Work Week
ZZ
= Assembly Lot Code
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
98AON13810G
DPAK3 (TO−252 3 LD)
PAGE 1 OF 1
DESCRIPTION:
onsemi and
are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves
the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
ADDITIONAL INFORMATION
TECHNICAL PUBLICATIONS:
Technical Library: www.onsemi.com/design/resources/technical−documentation
onsemi Website: www.onsemi.com
ONLINE SUPPORT: www.onsemi.com/support
For additional information, please contact your local Sales Representative at
www.onsemi.com/support/sales
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