FDD4685-F085P [ONSEMI]
P 沟道，PowerTrench® MOSFET，-40 V，-32 A，35 mΩ;
| 型号： | FDD4685-F085P |
| 厂家： | 
ONSEMI |
| 描述： | P 沟道，PowerTrench® MOSFET，-40 V，-32 A，35 mΩ |
| 文件： | 总7页 (文件大小：735K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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FDD4685-F085
®
P-Channel PowerTrench MOSFET
-40 V, -32 A, 35 mΩ
Features
Typical R
Typical R
Typical Q
= 23 m at V = -10V, I = -8.4 A
GS D
DS(on)
= 30 m at V = -4.5V, I = -7 A
DS(on)
GS
D
= 19 nC at V = -5V, I = -8.4 A
g(tot)
GS
D
UIS Capability
D
RoHS Compliant
Qualified to AEC Q101
G
S
Applications
D-PAK
(TO-252)
Inverter
Power Supplies
MOSFET Maximum Ratings TJ = 25°C unless otherwise noted.
Symbol
VDSS
Parameter
Ratings
-40
Units
Drain-to-Source Voltage
Gate-to-Source Voltage
V
V
VGS
±20
Drain Current - Continuous (TC < 90°C, VGS=10)
Pulsed Drain Current
(Note 1)
-32
ID
A
See Figure 4
EAS
PD
Single Pulse Avalanche Energy
(Note 2)
121
83
mJ
W
W/oC
oC
oC/W
oC/W
Power Dissipation
Derate Above 25oC
0.56
TJ, TSTG Operating and Storage Temperature
-55 to + 175
1.8
RJC
RJA
Thermal Resistance, Junction to Case
Maximum Thermal Resistance, Junction to Ambient
(Note 3)
40
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape Width
12mm
Quantity
2500units
FDD4685-F085
FDD4685
D-PAK(TO-252)
13”
Notes:
1. Current is limited by bondwire configuration.
2. Starting T = 25°C, L = 3mH, I = 9A, V = 40V during inductor charging and V = 0V during time in avalanche.
J
AS
DD
DD
3. R
is the sum of the junction-to-case and case-to-ambient thermal resistance, where the case thermal reference is defined as the solder
θJA
mounting surface of the drain pins. R
presented here is based on mounting on a 1 in pad of 2oz copper.
4. A suffix as “…F085P” has been temporarily introduced in order to manage a double source strategy as ON Semiconductor has officially
is guaranteed by design, while R
is determined by the board design. The maximum rating
θJC
θJA
2
announced in Aug 2014.
Publication Order Number:
FDD4685-F085/D
©2016 Semiconductor Components Industries, LLC.
September-2017,Rev.2
Electrical Characteristics TJ = 25°C unless otherwise noted.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BVDSS
Drain-to-Source Breakdown Voltage
ID = -250A, VGS = 0V
-40
-
-
-
-
V
BVDSS Breakdown Voltage Temperature
TJ
IDSS
ID = -250μA, referenced to 25oC
-33
mV/oC
Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Leakage Current
VDS = -32V
VGS = ±20V
-
-
-
-
-1
A
IGSS
±100
nA
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = -250A
-1
-
-1.6
4.9
-3
-
V
VGS(th) Gate to Source Threshold Voltage
ID = –250μA, referenced to 25°C
mV/oC
TJ
RDS(on)
gFS
Temperature Coefficient
I
D = -8.4A, VGS= -10V
-
-
-
-
23
30
38
23
27
35
45
-
Drain to Source On Resistance
Forward Transconductance
ID = -7A, VGS= -4.5V
ID = -8.4A, VGS= -10V, TJ = 150oC
m
ID = –8.4A, VDS = –5V
s
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
-
-
-
-
-
-
-
1790
260
140
4
2380
pF
pF
pF
VDS = -20V, VGS = 0V,
f = 1MHz
Output Capacitance
345
Reverse Transfer Capacitance
Gate Resistance
205
f = 1MHz
-
27
-
Qg(ToT)
Qgs
Total Gate Charge
19
nC
nC
nC
VDD = -20V, VGS = -5V,
ID = -8.4A
Gate-to-Source Gate Charge
Gate-to-Drain “Miller“ Charge
5.6
6.1
Qgd
-
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay
Rise Time
-
-
-
-
8
16
27
55
26
ns
ns
ns
ns
15
34
14
VDD = -20V, ID = -8.4A,
V
GS = -10V, RGEN = 6
Turn-Off Delay
Fall Time
Drain-Source Diode Characteristics
VSD
trr
Source-to-Drain Diode Voltage
Reverse-Recovery Time
ISD = -8.4A, VGS = 0V
-
-
-
-0.85
30
-1.2
45
V
ns
nC
ISD = -8.4A, dISD/dt = 100A/s
Qrr
Reverse-Recovery Charge
31
47
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2
Typical Characteristics
Figure 2. Maximum Continuous Drain Current vs.
Case Temperature
Figure 1. Normalized Power Dissipation vs. Case
Temperature
Figure 3. Normalized Maximum Transient Thermal Impedance
Figure 4. Peak Current Capability
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3
Typical Characteristics
NOTE: Refer to ON SemiconductorApplication Notes AN7514
and AN7515
Figure 5. Forward Bias Safe Operating Area
Figure 6. Unclamped Inductive Switching
Capability
Figure 7. Transfer Characteristics
Figure 8. Saturation Characteristics
Figure 9. Drain to Source On-Resistance
Variation vs. Gate to Source Voltage
Figure 10. Normalized Drain to Source On
Resistance vs. Junction Temperature
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4
Typical Characteristics
Figure 11. Normalized Gate Threshold Voltage vs.
Junction Temperature
Figure 12. Normalized Drain to Source
Breakdown Voltage vs. Junction Temperature
Figure 13. Capacitance vs. Drain to Source
Voltage
Figure 14. Gate charge vs. Gate to Source
Voltage
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5
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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❖
相关型号：
FDD4685_F085
Power Field-Effect Transistor, 32A I(D), 40V, 0.027ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT, DPAK-3
FAIRCHILD
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