FDD5353 [ONSEMI]
N 沟道，Power Trench® MOSFET，60V，50A，12.3mΩ;
| 型号： | FDD5353 |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道，Power Trench® MOSFET，60V，50A，12.3mΩ 开关 脉冲 晶体管 |
| 文件： | 总8页 (文件大小：471K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Is Now Part of
To learn more about ON Semiconductor, please visit our website at
www.onsemi.com
Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers
will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor
product management systems do not have the ability to manage part nomenclature that utilizes an underscore
(_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain
device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated
device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please
email any questions regarding the system integration to Fairchild_questions@onsemi.com.
ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number
of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right
to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON
Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out
of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor
is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
April 2015
FDD5353
N-Channel Power Trench® MOSFET
60V, 50A, 12.3m
Features
General Description
Max rDS(on) = 12.3m at VGS = 10V, ID = 10.7A
Max rDS(on) = 15.4m at VGS = 4.5V, ID = 9.5A
100% UIL Tested
This N-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced Power Trench® process that has
been especially tailored to minimize the on-state resistance and
yet maintain superior switching performance.
RoHS Compliant
Application
Inverter
Synchronous rectifier
Primary switch
D
D
G
G
S
D-PAK
(TO-252)
S
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDS
VGS
Parameter
Ratings
60
Units
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Continuous
V
V
±20
TC = 25°C
TA = 25°C
50
ID
(Note 1a)
(Note 3)
11.5
A
-Pulsed
100
EAS
Single Pulse Avalanche Energy
Power Dissipation
253
mJ
W
TC = 25°C
TA = 25°C
69
PD
Power Dissipation
(Note 1a)
3.1
TJ, TSTG
Operating and Storage Junction Temperature Range
-55 to +150
°C
Thermal Characteristics
RJC
RJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
1.8
40
°C/W
(Note 1a)
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
13’’
Tape Width
16mm
Quantity
FDD5353
FDD5353
D-PAK (TO-252)
2500 units
1
©2013 Fairchild Semiconductor Corporation
FDD5353 Rev.1.4
www.fairchildsemi.com
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250A, VGS = 0V
60
V
BVDSS
TJ
Breakdown Voltage Temperature
Coefficient
I
D = 250A, referenced to 25°C
77
mV/°C
IDSS
IGSS
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
VGS = 0V, VDS = 48V,
VGS = ±20V, VDS = 0V
1
A
±100
nA
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250A
1.0
1.8
-8
3.0
V
VGS(th)
TJ
Gate to Source Threshold Voltage
Temperature Coefficient
I
D = 250A, referenced to 25°C
GS = 10V, ID = 10.7A
mV/°C
V
10.1
12.1
16.7
41
12.3
15.4
20.3
rDS(on)
gFS
Static Drain to Source On Resistance
Forward Transconductance
VGS = 4.5V, ID = 9.5A
m
VGS = 10V, ID = 10.7A, TJ = 125°C
VDD = 5V, ID = 10.7A
S
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
2420
215
120
1.7
3215
285
pF
pF
pF
VDS = 30V, VGS = 0V,
f = 1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
180
f = 1MHz
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
11
6
20
11
58
10
65
32
ns
ns
VDD = 30V, ID = 10.7A,
V
GS = 10V, RGEN = 6
Turn-Off Delay Time
Fall Time
36
4
ns
ns
Qg
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
VGS = 0V to 10V
VGS = 0V to 4.5V
46
23
7
nC
nC
nC
nC
VDD = 30V,
D = 10.7A
Qg
I
Qgs
Qgd
9
Drain-Source Diode Characteristics
V
GS = 0V, IS = 10.7A
(Note 2)
(Note 2)
0.8
0.7
28
1.3
1.2
45
VSD
Source to Drain Diode Forward Voltage
V
VGS = 0V, IS = 2.6A
trr
Reverse Recovery Time
ns
IF = 10.7A, di/dt = 100A/s
Qrr
Reverse Recovery Charge
21
34
nC
Notes:
1: R
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
JA
R
is guaranteed by design while R
is determined by the user’s board design.
JC
JA
a)
40°C/W when mounted on a
1 in pad of 2 oz copper
b) 96°C/W when mounted
on a minimum pad.
2
2: Pulse Test: Pulse Width < 300s, Duty cycle < 2.0%.
3: E of 253mJ is based on starting T = 25°C, L = 3mH, I = 13A, V = 60V, V = 10V. 100% test at L = 0.1mH, I = 41A.
AS
J
AS
DD
GS
AS
www.fairchildsemi.com
©2013 Fairchild Semiconductor Corporation
FDD5353 Rev.1.4
2
Typical Characteristics TJ = 25°C unless otherwise noted
100
3.0
2.5
2.0
1.5
1.0
0.5
VGS = 10V
VGS = 3V
VGS = 3.5V
80
VGS = 4.5V
VGS = 4V
VGS = 4V
60
VGS = 3.5V
VGS = 4.5V
40
PULSE DURATION = 80s
DUTY CYCLE = 0.5%MAX
20
VGS = 10V
VGS = 3V
PULSE DURATION = 80s
DUTY CYCLE = 0.5%MAX
0
0
1
2
3
4
5
0
20
40
60
80
100
ID, DRAIN CURRENT(A)
VDS, DRAIN TO SOURCE VOLTAGE (V)
F ig u r e 1 . O n - R e g i o n C h a r a c t e r i s t i c s
F ig u r e 2 . N o r m a li z e d On - R e s is ta n c e
vs Drain Current and Gate Voltage
2.0
40
PULSE DURATION = 80s
DUTY CYCLE = 0.5%MAX
ID = 10.7A
VGS = 10V
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
32
24
16
8
ID = 10.7A
TJ = 125oC
TJ = 25oC
0
2
3
4
5
6
7
8
9
10
-75 -50 -25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
VGS, GATE TO SOURCE VOLTAGE (V)
F igu re 3 . N orma lized On - Res is ta nc e
vs Junction Temperature
Figure 4. On-Resistance vs Gate to
Source Voltage
100
200
100
VGS = 0V
PULSE DURATION = 80s
DUTY CYCLE = 0.5%MAX
80
60
40
20
0
10
VDS = 5V
TJ = 150oC
1
TJ = 25oC
TJ = 150oC
0.1
TJ = 25oC
TJ = -55oC
0.01
TJ = -55oC
0.001
1
2
3
4
5
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
www.fairchildsemi.com
©2013 Fairchild Semiconductor Corporation
FDD5353 Rev.1.4
3
Typical Characteristics TJ = 25°C unless otherwise noted
10
10000
1000
100
ID = 10.7A
VDD = 20V
Ciss
8
Coss
6
VDD = 30V
4
VDD = 40V
Crss
f = 1MHz
= 0V
2
0
V
GS
10
0.1
0
10
20
30
40
50
1
10
30
VDS, DRAIN TO SOURCE VOLTAGE (V)
Q , GATE CHARGE(nC)
g
F i g u r e 7 . G a t e C h a r g e C h a r a c t e r i s t i c s
F i g u r e 8 . C a p a c i t a n c e v s D r a i n
to Source Voltage
60
50
40
30
20
10
100
VGS = 10V
TJ = 25oC
Limited by Package
VGS = 4.5V
10
TJ = 125oC
R
JC = 1.8oC/W
0
25
1
0.01
50
75
100
125
150
0.1
1
10
100
o
tAV, TIME IN AVALANCHE(ms)
TC, CASE TEMPERATURE ( C)
F i g u r e 9 . U n c l a m p e d I n d u c t i v e
Switching Capability
Figure 10. Maximum Continuous Drain
Current vs Case Temperature
105
200
100
VGS = 10V
104
103
102
10
100µs
SINGLE PULSE
JC = 1.8oC/W
TC = 25oC
10
1
R
THIS AREA IS
LIMITED BY rDS(on)
1ms
SINGLE PULSE
TJ = MAX RATED
10ms
DC
R
JC = 1.8oC/W
C = 25oC
T
0.1
10-6
10-5
10-4
t, PULSE WIDTH (sec)
10-3
10-2
10-1
1
1
10
100 200
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe
Operating Area
Figure 12. Single Pulse Maximum
Power Dissipation
www.fairchildsemi.com
©2013 Fairchild Semiconductor Corporation
FDD5353 Rev.1.4
4
Typical Characteristics TJ = 25°C unless otherwise noted
2
1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
P
DM
t
0.01
1
t
2
NOTES:
DUTY FACTOR: D = t /t
SINGLE PULSE
RJC = 1.8oC/W
1
2
PEAK T = P
J
x Z x R + T
Jc Jc C
DM
0.001
5E-4
10-6
10-5
10-4
10-3
10-2
10-1
1
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Transient Thermal Response Curve
2
1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.01
0.1
P
DM
0.05
0.02
0.01
t
1
t
2
SINGLE PULSE
NOTES:
DUTY FACTOR: D = t /t
0.001
R
JA = 96oC/W
1
2
PEAK T = P
J
x Z
x R
+ T
DM
JA
JA A
(Note 1b)
0.0001
10-4
10-3
10-2
10-1
t, RECTANGULAR PULSE DURATION (sec)
1
10
100
1000
Figure 14. Transient Thermal Response Curve
www.fairchildsemi.com
©2013 Fairchild Semiconductor Corporation
FDD5353 Rev.1.4
5
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
Literature Distribution Center for ON Semiconductor
19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
For additional information, please contact your local
Sales Representative
© Semiconductor Components Industries, LLC
www.onsemi.com
相关型号：
FDD5614P_NL
Power Field-Effect Transistor, 15A I(D), 60V, 0.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, TO-252, 3 PIN
FAIRCHILD
FDD5670_NL
Power Field-Effect Transistor, 21A I(D), 60V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3
FAIRCHILD
©2020 ICPDF网 联系我们和版权申明