FDD4685 [ONSEMI]

P 沟道 PowerTrench® MOSFET，-40V，-23A，27mΩ;


型号：	FDD4685
厂家：	ONSEMI
描述：	P 沟道 PowerTrench® MOSFET，-40V，-23A，27mΩ 脉冲晶体管
文件：	总8页 (文件大小：595K)
中文：	中文翻译
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Semiconductor data sheets and/or speciﬁcations can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s

technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA

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of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor

is an Equal Opportunity/Afﬁrmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

March 2015

FDD4685

40V P-Channel PowerTrench^®MOSFET

–40V, –32A, 27mΩ

Features

General Description

Max r_DS(on)= 27mΩ at V_GS= –10V, I_D= –8.4A

Max r_DS(on)= 35mΩ at V_GS= –4.5V, I_D= –7A

High performance trench technology for extremely low r_DS(on)

RoHS Compliant

This P-Channel MOSFET has been produced using Fairchild

Semiconductor’s proprietary PowerTrench^®technology to

deliver low r_DS(on)and good switching characteristic offering

superior performance in application.

Application

Inverter

Power Supplies

D-PAK

TO-252

(TO-252)

MOSFET Maximum Ratings T_C= 25°C unless otherwise noted

Symbol

V_DS

V_GS

Parameter

Ratings

–40

Units

Drain to Source Voltage

Gate to Source Voltage

±20

Drain Current -Continuous(Package Limited)

-Continuous(Silicon Limited)

-Continuous

T_C= 25°C

T_A= 25°C

–32

(Note 1)

–40

I_D

(Note 1a)

–8.4

-Pulsed

–100

121

E_AS

Drain-Source Avalanche Energy

Power Dissipation

(Note 3)

T_C= 25°C

P_D

Power Dissipation

(Note 1a)

T_J, T_STG

Operating and Storage Junction Temperature Range

–55 to +150

°C

Thermal Characteristics

R_θJC

R_θJA

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

1.8

°C/W

(Note 1a)

Package Marking and Ordering Information

Device Marking

Device

Package

Reel Size

13’’

Tape Width

16mm

Quantity

FDD4685

D-PAK(TO-252)

2500 units

FDD4685 Rev. 1.3

www.fairchildsemi.com

Electrical Characteristics ^T_J^{= 25°C unless otherwise noted}

Symbol

Parameter

Test Conditions

Min

Typ

Max

Units

Off Characteristics

BV_DSS

Drain to Source Breakdown Voltage

I_D= –250µA, V_GS= 0V

–40

∆BV_DSS

∆T_J

Breakdown Voltage Temperature

Coefficient

I_D= –250µA, referenced to 25°C

–33

mV/°C

I_DSS

I_GSS

Zero Gate Voltage Drain Current

Gate to Source Leakage Current

V_DS= –32V, V_GS= 0V

V_GS= ±20V, V_GS= 0V

–1

µA

±100

On Characteristics (Note 2)

V_GS(th)

Gate to Source Threshold Voltage

V_GS= V_DS, I_D= –250µA

–1

–1.6

4.9

–3

∆V_GS(th)

∆T_J

Gate to Source Threshold Voltage

Temperature Coefficient

I_D= –250µA, referenced to 25°C

mV/°C

V_GS= –10V, I_D= –8.4A

V_GS= –4.5V, I_D= –7A

r_DS(on)

Static Drain to Source On Resistance

Forward Transconductance

mΩ

V_GS= –10V, I_D= –8.4A, T_J=125°C

V_DS= –5V, I_D= –8.4A

g_FS

Dynamic Characteristics

C_iss

C_oss

C_rss

R_g

Input Capacitance

1790

260

140

2380

345

Ω

V_DS= –20V, V_GS= 0V,

f = 1MHz

Output Capacitance

Reverse Transfer Capacitance

Gate Resistance

205

f = 1MHz

Switching Characteristics

t_d(on)

t_r

t_d(off)

t_f

Turn-On Delay Time

Rise Time

V_DD= –20V, I_D= –8.4A

V_GS= –10V, R_GEN= 6Ω

5.6

6.1

Turn-Off Delay Time

Fall Time

Q_g(TOT)

Q_gs

Q_gd

Total Gate Charge

Gate to Source Gate Charge

Gate to Drain “Miller” Charge

V_DD=–20V, I_D= –8.4A

V_GS= –5V

Drain-Source Diode Characteristics

V_SD

t_rr

Source to Drain Diode Forward Voltage

Reverse Recovery Time

V_GS= 0V, I_S= –8.4A (Note 2)

–0.85

–1.2

I_F= –8.4A, di/dt = 100A/µs

Q_rr

Reverse Recovery Charge

Notes:

1: R

is the sum of the junction-to-case and case-to- ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.

θJA

θJC

is guaranteed by design while R

is determined by the user’s board design.

θJA

a. 40°C/W when mounted on a 1 in pad of 2 oz copper

b. 96°C/W when mounted on a minimum pad.

2: Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%.

3: Starting T = 25°C, L = 3mH, I = 9A, V = 40V, V = 10V.

www.fairchildsemi.com

FDD4685 Rev. 1.3

Typical Characteristics ^T_J^{= 25°C unless otherwise noted}

100

3.0

2.6

2.2

1.8

1.4

1.0

0.6

PULSE DURATION = 80µs

DUTY CYCLE = 0.5%MAX

PULSE DURATION = 80µs

DUTY CYCLE = 0.5%MAX

V_GS= -3V

V_GS= -4V

V_GS= -4.5V

= -6V

= -10V

= -4.5V

= -4V

V_GS= -6V

V_GS= -10V

= -3V

100

-V , DRAIN TO SOURCE VOLTAGE (V)

-I_D, DRAIN CURRENT(A)

Figure 1. On Region Characteristics

Figure2. N o r m a l i ze d O n - R e s i s t a n c e

vs Drain Current and Gate Voltage

1.8

I_D=-8.4A

PULSE DURATION = 80µs

= -8.4A

V_GS= -10V

1.6

1.4

1.2

1.0

0.8

0.6

DUTY CYCLE = 0.5%MAX

= 125^oC

= 25^oC

-50 -25

100 125 150

T_J, JUNCTION TEMPERATURE (^oC)

-V_GS, GATE TO SOURCE VOLTAGE (V)

Figure 3. Normalized On Resistance

vs Junction Temperature

Figure4. On-Resistance vs Gate to

Source Voltage

100

= 0V

PULSE DURATION = 80µs

DUTY CYCLE = 0.5%MAX

= 150^oC

= 25^oC

T = 150^oC

= -55^oC

0.1

0.4

0.6

0.8

1.0

1.2

-V_GS, GATE TO SOURCE VOLTAGE (V)

-V , BODY DIODE FORWARD VOLTAGE (V)

Figure 5. Transfer Characteristics

Figure6. Source to Drain Diode

Forward Voltage vs Source Current

www.fairchildsemi.com

FDD4685 Rev. 1.3

Typical Characteristics ^T_J^{= 25°C unless otherwise noted}

10⁴

10³

10²

10¹

= -10V

iss

= -20V

oss

= -30V

rss

f = 1MHz

= 0V

0.1

Q , GATE CHARGE(nC)

-V_DS, DRAIN TO SOURCE VOLTAGE (V)

Figure 7. Gate Charge Characteristics

Figure8. C a p a c i t a n c e v s D r a i n

to Source Voltage

= -10V

= -4.5V

T_J= 25^oC

T_J= 125^oC

Limited by Package

θJC

= 1.8^oC/W

0.01

0.1

100

125

150

T_C, CASE TEMPERATURE (^oC)

t_AV, TIME IN AVALANCHE(ms)

Figure9. U n c l a m p e d I n d u c t i v e

Switching Capability

Figure10. Maximum Continuous Drain

Current vs Case Temperature

300

200

FOR TEMPERATURES

100

250

200

ABOVE 25 C DERATE PEAK

V_GS= -10V

CURRENT AS FOLLOWS:

100us

150 – T

I = I

----------------------

150

100

125

= 25 C

1ms

10ms

OPERATION IN THIS

AREA MAY BE

LIMITED BY r_DS(on)

SINGLE PULSE

= MAX RATED

= 25^OC

SINGLE PULSE

10^-2

0.1

10^-3

10^-1

10⁰

10¹

100

t, PULSE WIDTH (s)

-V , DRAIN to SOURCE VOLTAGE (V)

Figure 11. Forward Bias Safe

Operating Area

Figure12. Single Pulse Maximum

Power Dissipation

www.fairchildsemi.com

FDD4685 Rev. 1.3

Typical Characteristics ^T_J^{= 25°C unless otherwise noted}

DUTY CYCLE-DESCENDING ORDER

D = 0.5

0.2

0.1

0.05

0.02

0.01

0.1

0.01

SINGLE PULSE

NOTES:

DUTY FACTOR: D = t /t

PEAK T = P

x Z

x R

+ T

θJC

θJC C

1E-3

10^-5

10^-4

10^-3

10^-2

10^-1

10⁰

10¹

t, RECTANGULAR PULSE DURATION (s)

Figure 13. Transient Thermal Response Curve

www.fairchildsemi.com

FDD4685 Rev. 1.3

ON Semiconductor and

are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.

ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent

coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.

ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,

regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or

specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer

application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not

designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification

in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized

application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and

expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such

claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This

literature is subject to all applicable copyright laws and is not for resale in any manner.

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FDD4685 [ONSEMI]

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