FDD5612 [ONSEMI]
60V N 沟道 PowerTrench® MOSFET 18A，55mΩ;
| 型号： | FDD5612 |
| 厂家： | 
ONSEMI |
| 描述： | 60V N 沟道 PowerTrench® MOSFET 18A，55mΩ 开关 脉冲 晶体管 |
| 文件： | 总8页 (文件大小：441K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MOSFET – N-Channel,
POWERTRENCH)
60 V
FDD5612
General Description
This N−Channel MOSFET has been designed specifically
to improve the overall efficiency of DC/DC converters using either
synchronous or conventional switching PWM controllers.
These MOSFETs feature faster switching and lower gate charge
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D
than other MOSFETs with comparable R
specifications.
DS(ON)
The result is a MOSFET that is easy and safer to drive (even at very
high frequencies), and DC/DC power supply designs with higher
overall efficiency.
G
Features
• 18 A, 60 V
S
♦ R
♦ R
= 55 mW @ V = 10 V
GS
DS(ON)
= 64 mW @ V = 6 V
DS(ON)
GS
• Optimized for Use in High Frequency DC/DC Converters
• Low Gade Charge
D
G
• Very Fast Switching
S
• This Device is Pb−Free and are RoHS Compliant
DPAK3 (TO−252 3 LD)
CASE 369AS
MARKING DIAGRAM
$Y&Z&3&K
FDD
5612
$Y
= ON Semiconductor Logo
&Z
&3
&K
= Assembly Plant Code
= Numeric Date Code
= Lot Code
FDD5612
= Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2001
1
Publication Order Number:
January, 2021 − Rev. 4
FDD5612/D
FDD5612
ABSOLUTE MAXIMUM RATINGS (T = 25°C, Unless otherwise noted)
A
Symbol
Parameter
Ratings
Units
V
Drain−Source Voltage
Gate−Source Voltage
60
V
V
A
DSS
GSS
V
20
I
D
Drain Current − Continuous
T
T
= 25°C
18
C
= 100°C
13
C
T = 25°C (Note 1a)
A
5.4
T = 25°C (Note 1b)
A
3.5
Drain Current − Pulsed
100
P
D
Maximum Power Dissipation
T
T
= 25°C
42
21
W
C
= 100°C
C
T = 25°C (Note 1a)
A
3.8
T = 25°C (Note 1b)
A
1.6
T , T
Operating and Storage Junction Temperature Range
−55 to +175
°C
J
STG
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Symbol
Parameter
Ratings
3.5
Unit
R
Thermal Resistance, Junction−to−Case
_C/W
_C/W
_C/W
q
JC
R
Thermal Resistance, Junction−to−Ambient (Note 1a)
Thermal Resistance, Junction−to−Ambient (Note 1b)
40
q
JA
R
96
q
JA
PACKAGE MARKING AND ORDERING INFORMATION
Part Number
Device
Reel Size
Tape Width
Quantity
FDD5612
FDD5612
13”
16 mm
2500 Units
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
DRAIN−SOURCE AVALANCHE RATINGS (Note 1)
W
Single Pulse Drain−Source
Avalanche Energy
V
DD
= 30 V, I = 5.4 A
90
mJ
A
DSS
D
I
Maximum Drain−Source Avalanche
Current
5.4
AR
OFF CHARACTERISTICS
BV
Drain–Source Breakdown Voltage
V
I
= 0 V, I = 250 mA
60
V
DSS
GS
D
DBV
/ DT
Breakdown Voltage Temperature
Coefficient
= –250 mA, Referenced to 25°C
62
mV/_C
DSS
J
D
I
I
I
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
V
DS
V
GS
V
GS
= 48 V, V = 0 V
1
mA
nA
nA
DSS
GS
= 20 V, V = 0 V
100
−100
GSSF
GSSR
DS
= −20V, V = 0 V
DS
ON CHARACTERISTICS (Note 2)
V
Gate Threshold Voltage
V
I
= V , I = 250 mA
1
2.4
3
V
GS(th)
DS
GS
D
DV
/ DT
Gate Threshold Voltage Temperature
Coefficient
= 250 mA, Referenced to 25°C
−6
mV/_C
GS(th)
J
D
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2
FDD5612
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (continued)
A
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
ON CHARACTERISTICS (Note 2)
R
Static Drain–Source
On−Resistance
V
GS
V
GS
V
GS
= 10 V, I = 5.4 A
= 6 V, I = 5 A
D
36
42
64
55
64
103
mΩ
DS(on)
D
= 10 V, I = 5.4 A, T = 125°C
D
J
I
On–State Drain Current
V
GS
V
DS
= 10 V, V = 5 V
20
A
S
D(on)
DS
g
Forward Transconductance
= 5 V, I = 5.4 A
15
FS
D
DYNAMIC CHARACTERISTICS
C
C
C
Input Capacitance
V
= 30 V, V = 0 V,
660
79
pF
pF
pF
iss
DS
GS
f = 1.0 MHz
Output Capacitance
oss
rss
Reverse Transfer Capacitance
36
SWITCHING CHARACTERISTICS (Note 2)
t
t
t
t
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
V
V
= 30 V, I = 1 A,
8
4
16
8
ns
ns
d(on)
DD
D
= 10 V, R
= 6 W
GS
GEN
r
24
4
38
8
ns
d(off)
f
ns
Q
Q
Q
V
V
= 30 V, I = 5.4 A,
7.5
2.5
3
11
nC
nC
nC
g
DS
D
= 10 V
GS
gs
gd
DRAIN−SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I
Source Current (Body Diode)
T
= 25°C
18
A
V
S
C
V
Drain–Source Diode Forward Voltage
V
= 0 V, I = 2.7 A (Note 2)
0.8
1.2
SD
GS
S
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
NOTES:
1. R
is the sum of the junction−to−case and case−to−ambient thermal resistance where the case thermal reference is defined as the drain
q
JA
tab. R
is the guaranteed design while R
is determined by the user’s design. R
has been used to determine some of the maximum
q
q
q
JA
JA
JA
ratings.
a) R
= 40°C/W when
b) R
= 96°C/W when
JA
q
q
JA
2
2
mounted on a 1in pad
of 2 oz copper
mounted on a 0.076 in pad
of 2 oz copper
2. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
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3
FDD5612
TYPICAL CHARACTERISTICS
30
25
20
15
10
5
2.2
V
GS
= 10 V
6.0 V
5.0 V
V
GS
= 4.0 V
2
1.8
1.6
1.4
1.2
1
4.5 V
4.5 V
5.0 V
4.0 V
6.0 V
10 V
0
0.8
30
0
12
18
24
0
1
2
3
4
5
6
I , Drain Current [A]
D
V
DS
, Drain-Source Voltage [V]
Figure 2. On−Resistance Variation with
Figure 1. On-Region Characteristics
Drain Current and Gate Voltage
2.6
2.2
1.8
1.4
1
0.12
0.1
I
= 5.4 A
GS
I
D
= 5.4 A
D
V
= 10 V
T = 125°C
A
0.08
0.06
T = 25°C
A
0.04
0.02
0.6
0.2
−50 −25
0
25 50 75 100 125 150 175
2
4
6
8
10
T , Junction Temperature [°C]
J
V
GS
, Gate to Source Voltage [V]
Figure 3. On-Resistance Variation
with Temperature
Figure 4. On−Resistance Variation with
Gate−to−Source Voltage
30
25
20
15
10
5
100
10
V
GS
= 0 V
V
DS
= 5 V
T = −55°C
A
25°C
125°C
T = 125°C
A
1
25°C
0.1
−55°C
0.01
0.001
0.0001
0
5
1
2
3
4
1
0
0.2
V
0.4
0.6
0.8
1.2
, Body Diode Forward Voltage [V]
V
, Gate to Source Voltage [V]
SD
GS
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature
Figure 5. Transfer Characteristics
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4
FDD5612
TYPICAL CHARACTERISTICS (continued)
10
8
1000
f = 1 MHz
= 0 V
I
D
= 5.4 A
V
DS
= 20 V
V
GS
800
600
C
ISS
6
30 V
4
400
40 V
2
C
OSS
200
0
C
RSS
0
0
10
20
30
40
50
60
0
14
2
4
6
8
10
12
V
DS
, Drain to Source Voltage [V]
Q , Gate Charge [nC]
g
Figure 8. Capacitance Characteristics
Figure 7. Gate Charge Characteristics
1000
100
10
80
60
40
20
0
SINGLE PULSE
R
= 96°C/W
q
JA
T = 25°C
A
R
LIMIT
DS(ON)
1 m
10 ms
100 ms
1 s
1
0.1
10 s
DC
V
GS
= 4.5 V
SINGLE PULSE
= 96°C/W
R
q
JA
T = 25°C
A
0.01
10
, Drain−Source Voltage [V]
100
0.1
1
0.01
0.1
1
10
100
1000
t , Time [sec]
V
DS
1
Figure 10. Single Pulse Maximum
Power Dissipation
Figure 9. Maximum Safe Operating Area
20
15
10
5
0
175
125
T , Case Temperature [°C]
150
75
100
25
50
C
Figure 11. Maximum Drain Current vs. Case
Temperature
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5
FDD5612
1
0.1
D = 0.5
0.2
0.1
0.05
R
R
(t) = r(t) * R
q
q
q
JA
JA
JA
= 96°C/W
0.02
0.01
P(pk)
0.01
t
1
t
2
0.001
0.0001
T − T = P * R (t)
q
JA
J
A
SINGLE PULSE
0.001
Duty Cycle, D = t /t
1
2
0.0001
0.01
0.1
1
10
100
1000
t , Time [sec]
1
Figure 12. Transient Thermal Response Curve
NOTES:
3. Thermal characterization performed using the conditions described in Note 1b.
4. Transient thermal response will change depending on the circuit board design.
POWERTRENCH is registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or
other countries.
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6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
DPAK3 (TO−252 3 LD)
CASE 369AS
ISSUE A
DATE 28 SEP 2022
GENERIC
MARKING DIAGRAM*
XXXXXX
XXXXXX
AYWWZZ
XXXX = Specific Device Code
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
A
Y
= Assembly Location
= Year
WW = Work Week
ZZ
= Assembly Lot Code
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
98AON13810G
DPAK3 (TO−252 3 LD)
PAGE 1 OF 1
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