FDD5670 [ONSEMI]
N 沟道，PowerTrench® MOSFET，60V，52A，15mΩ;
| 型号： | FDD5670 |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道，PowerTrench® MOSFET，60V，52A，15mΩ |
| 文件： | 总6页 (文件大小：312K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
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or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
FDD5670
60V N-Channel PowerTrench® MOSFET
General Description
Features
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low RDS( ON) and fast switching speed.
extremely low RDS(ON) in a small package.
• 52 A, 60 V
RDS(ON) = 15 mΩ @ VGS = 10 V
RDS(ON) = 18 mΩ @ VGS = 6 V
• Low gate charge
• Fast switching
Applications
• High performance trench technology for extremely
low RDS(ON)
• DC/DC converter
• Motor drives
D
D
G
G
S
TO-252
S
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
60
V
V
A
VGSS
Gate-Source Voltage
20
52
150
ID
Drain Current – Continuous
– Pulsed
Power Dissipation for Single Operation
(Note 3)
(Note 1a)
(Note 1)
PD
W
83
(Note 1a)
(Note 1b)
3.8
1.6
TJ, TSTG
Operating and Storage Junction Temperature Range
-55 to +175
°C
Thermal Characteristics
Thermal Resistance, Junction-to-Case
(Note 1)
(Note 1a)
(Note 1b)
1.8
40
96
RθJC
RθJA
RθJA
°C/W
°C/W
°C/W
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
FDD5670
FDD5670
13’’
16mm
2500 units
©2011 Semiconductor Components Industries, LLC.
October-2017, Rev. 2
Publication Order Number:
FDD5670/D
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Drain-Source Avalanche Ratings (Note 2)
WDSS
IAR
Drain-Source Avalanche Energy
Drain-Source Avalanche Current
Single Pulse, VDD = 20 V, ID = 10A
360
10
mJ
A
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage
60
V
VGS = 0 V, ID = 250 μA
ΔBVDSS
===ΔTJ
IDSS
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
53
ID = 250 μA, Referenced to 25°C
mV/°C
V
V
V
DS = 48 V,
GS = 20 V,
GS = –20 V, VDS = 0 V
V
GS = 0 V
1
100
–100
μA
nA
nA
IGSSF
IGSSR
VDS = 0 V
On Characteristics
(Note 2)
VGS(th)
Gate Threshold Voltage
2
2.5
–6
4
V
VDS = VGS, ID = 250 μA
ID = 250 μA, Referenced to 25°C
Gate Threshold Voltage
ΔVGS(th)
===ΔTJ
mV/°C
Temperature Coefficient
12
14
19
RDS(on)
Static Drain–Source
On–Resistance
V
V
V
V
GS = 10 V, ID = 10 A
15
18
26
mΩ
GS = 6 V, ID = 9 A
GS = 10 V, ID = 10 A, TJ = 125°C
ID(on)
gFS
On–State Drain Current
Forward Transconductance
GS = 10 V,
DS = 5 V,
V
DS = 5 V
60
A
S
V
ID = 10 A
27
Dynamic Characteristics
VDS = 15 V,
f = 1.0 MHz
V GS = 0 V,
Ciss
Coss
Crss
Input Capacitance
2739
441
182
pF
pF
pF
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 2)
V
DD = 30 V,
ID = 1 A,
RGEN = 6 Ω
td(on)
tr
td(off)
tf
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
20
12
60
24
52
10
13
32
24
95
38
73
ns
ns
ns
VGS = 10 V,
ns
V
V
DS = 15 V,
GS = 10 V
ID = 10 A,
Qg
Qgs
Qgd
nC
nC
nC
Drain–Source Diode Characteristics and Maximum Ratings
VSD
Drain–Source Diode Forward
Voltage
VGS = 0 V, IS = 3.5 A
(Note 2)
0.74
1.2
V
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a)
R
θJA = 40°C/W when mounted on a
b)
R
θJA = 96°C/W when mounted
1in2 pad of 2 oz copper
on a minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300μs, Duty Cycle < 2.0%
P
D
RDS(ON)
3. Maximum current is calculated as:
where PD is maximum power dissipation at TC = 25°C and RDS(on) is at TJ(max) and VGS = 10V. Package current limitation is 21A
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2
Typical Characteristics
2
1.8
1.6
1.4
1.2
1
60
VGS = 10V
5.0V
6.0V
50
40
30
20
10
0
VGS = 4.0V
4.5V
4.0V
4.5V
5.0V
6.0V
7.0V
10V
3.5V
0.8
0
10
20
30
40
50
60
0
1
2
3
4
ID, DRAIN CURRENT (A)
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.05
0.04
0.03
0.02
0.01
0
1.8
ID = 10 A
ID =10A
VGS = 10V
1.6
1.4
1.2
1
TA = 125oC
TA = 25oC
0.8
0.6
0.4
-50
-25
0
25
50
75
100
125
150
3
4
5
6
7
8
9
10
TJ, JUNCTION TEMPERATURE (oC)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation
withTemperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
60
VGS = 0V
TA = -55oC
25oC
125oC
VDS = 5V
10
50
40
30
20
10
0
TA = 125oC
1
0.1
25oC
-55oC
0.01
0.001
0.0001
0
0.2
0.4
0.6
0.8
1
1.2
1.4
2
2.5
3
3.5
4
4.5
5
V
SD, BODY DIODE FORWARD VOLTAGE (V)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
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3
Typical Characteristics
10
5000
4000
3000
2000
1000
0
VDS = 10V
f = 1MHz
VGS = 0 V
ID = 11A
20V
8
6
4
2
0
30V
CISS
COSS
CRSS
0
10
20
30
40
50
60
0
10
20
30
40
50
60
Qg, GATE CHARGE (nC)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
1000
100
10
800
600
400
200
0
SINGLE PULSE
R
θJA = 96°C/W
C = 25°C
100μs
T
RDS(ON) LIMIT
1ms
10ms
100ms
1s
10s
1
DC
VGS = 10V
SINGLE PULSE
0.1
0.01
R
θJA = 96oC/W
TC = 25oC
0.0001
0.001
0.01
0.1
1
10
100
1000
0.1
1
10
100
t1, TIME (sec)
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
R
θJC(t) = r(t) x RθJC
0.2
R
θJA = 96 °C/W
0.1
0.1
0.05
P(pk)
0.02
t1
t2
0.01
0.01
TJ - TC = P x RθJC(t)
Duty Cycle, D = t1 / t2
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
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4
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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