FDD5810-F085 [ONSEMI]
60 V、37 A、18 mΩ、DPAK、逻辑电平N 沟道 PowerTrench®;
| 型号： | FDD5810-F085 |
| 厂家： | 
ONSEMI |
| 描述： | 60 V、37 A、18 mΩ、DPAK、逻辑电平N 沟道 PowerTrench® |
| 文件： | 总8页 (文件大小：344K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi
product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without
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or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all
liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,
regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
FDD5810-F085
N-Channel Logic Level Trench®MOSFET!
60V, 36A, 27m"
Applications
Motor / Body Load Control
Features
ABS Systems
RDS(ON) = 22m"!#Typ.), VGS = 5V, ID = 29A
Powertrain Management
Qg(5) = 13nC (Typ.), VGS = 5V
Injection System
Low Miller Charge
DC-DC converters and Off-line UPS
Low Qrr Body Diode
Distributed Power Architecture and VRMs
UIS Capability (Single Pulse / Repetitive Pulse)
Primary Switch for 12V and 24V systems
Qualified to AEC Q101
RoHS Compliant
D
D
G
G
S
D-PAK
(TO-252)
S
Publication Order Number:
FDD5810-F085/D
©2010 Semiconductor Components Industries, LLC.
September-2017,Rev.1
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
VGS
Parameter
Ratings
60
Units
V
Drain to Source Voltage
Gate to Source Voltage
ꢀ20
V
Drain Current Continuous (VGS = 10V)
Drain Current Continuous (VGS = 5V)
Continuous (TA = 25oC, VGS = 10V, with R%JA = 52oC/W)
Pulsed
37
A
33
A
ID
7.4
A
Figure 4
45
A
EAS
Single Pulse Avalanche Energy (Note 1)
mJ
Power Dissipation
Derate above 25oC
72
W
PD
0.48
-55 to 175
W/oC
oC
TJ, TSTG
Operating and Storage Temperature
Thermal Characteristics
R%JC
R%JA
Maximum Thermal resistance Junction to Case TO-252
Thermal Resistance Junction to Ambient TO-252, 1in2 copper pad area
2.1
52
oC/W
oC/W
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape Width
16mm
Quantity
2500 units
FDD5810
TO-252AA
330mm
FDD5810-F085
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
ID = 250&A, VGS = 0V
60
-
-
-
-
-
-
V
V
DS = 48V
1
IDSS
&A
nA
VGS = 0V
TC = 150oC
-
250
ꢀ100
IGSS
VGS = ꢀ20V
-
On Characteristics
VGS(TH)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250&A
1
-
1.6
18
22
2
V
ID = 32A, VGS = 10V
22
27
ID = 29A, VGS = 5V
-
RDS(ON)
Drain to Source On Resistance
m"
ID = 32A, VGS = 10V,
TJ = 175oC
-
43
53
Dynamic Characteristics
Ciss
Coss
Crss
RG
Input Capacitance
-
-
-
-
-
-
-
-
-
-
1420
150
65
1890
pF
pF
pF
"
VDS = 25V, VGS = 0V,
f = 1MHz
Output Capacitance
200
Reverse Transfer Capacitance
Gate Resistance
100
f = 1MHz
3.5
24
-
34
18
-
Qg
Total Gate Charge at 10V
Total Gate Charge at 5V
Threshold Gate Charge
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
VGS = 0V to 10V
VGS = 0V to 5V
nC
nC
nC
nC
nC
nC
Qg
13
VDD = 30V
ID = 35A
Qg(th)
Qgs
Qgs2
Qgd
VGS = 0V to 1V
1.3
4.0
2.7
5.0
-
-
-
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2
Switching Characteristics
ton
td(on)
tr
Turn-On Time
Turn-On Delay Time
Rise Time
-
-
-
-
-
-
-
130
ns
ns
ns
ns
ns
ns
12
75
26
34
-
-
-
VDD = 30V, ID = 35A
VGS = 5V, RGS = 11"
td(off)
tf
Turn-Off Delay Time
Fall Time
-
-
toff
Turn-Off Time
90
Drain-Source Diode Characteristics
I
SD = 32A
ISD = 16A
F = 35A, di/dt = 100A/&s
-
-
-
-
-
-
-
-
1.25
1.0
39
V
V
VSD
Source to Drain Diode Voltage
trr
Reverse Recovery Time
Reverse Recovery Charge
I
ns
nC
Qrr
IF = 35A, di/dt = 100A/&s
35
Notes:
1: Starting T = 25°C, L = 110µH, IAS = 28A, VDD = 54V, VGS = 10V.
J
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3
Typical Characteristics TJ = 25°C unless otherwise noted
1.2
40
1.0
30
VGS = 10V
0.8
0.6
VGS = 5V
20
0.4
10
0.2
0
0
25
50
75
100
125
150
175
0
25
50
75
100
150
175
125
TC, CASE TEMPERATURE (oC)
TC, CASE TEMPERATURE(oC)
Figure 1. Normalized Power Dissipation vs Case
Temperature
Figure 2. Maximum Continuous Drain Current vs
Case Temperature
2
DUTY CYCLE - DESCENDING ORDER
0.5
1
0.2
0.1
0.05
0.02
0.01
PDM
0.1
t1
t2
SINGLE PULSE
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x R%JC + TC
0.01
10-5
10-4
10-3
10-2
10-1
100
101
t, RECTANGULAR PULSE DURATION (s)
Figure 3. Normalized Maximum Transient Thermal Impedance
600
TC = 25oC
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:
175 - TC
I = I25
150
100
VGS = 5V
30
10-5
10-4
10-3
10-2
10-1
100
101
t, PULSE WIDTH (s)
Figure 4. Peak Current Capability
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4
Typical Characteristics TJ = 25°C unless otherwise noted
500
200
100
If R = 0
10us
tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD
If R!ꢁ 0
tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1]
)
100
10
100us
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(on)
STARTING TJ = 25oC
10
1
SINGLE PULSE
1ms
STARTING TJ = 150oC
T
= MAX RATED
o
J
10ms
DC
T
C
= 25 C
1
0.1
200
1
10
100
0.001
0.01
0.1
1
10
100
VDS, DRAIN TO SOURCE VOLTAGE (V)
tAV, TIME IN AVALANCHE (ms)
NOTE: Refer to ON Semiconductor Application Notes AN7514 and
AN7515
Figure 5. Forward Bias Safe Operating Area
Figure 6. Unclamped Inductive Switching
Capability
60
60
VGS = 4.5V
PULSE DURATION = 80&s
VGS = 10V
DUTY CYCLE = 0.5% MAX
VDD = 6V
VGS = 5V
VGS = 4V
40
40
TJ = 25oC
VGS = 3.5V
20
20
VGS = 3V
TJ = 175oC
PULSE DURATION = 80&s
TJ = -55oC
TC = 25oC
DUTY CYCLE = 0.5% MAX
0
0
4.0
VGS, GATE TO SOURCE VOLTAGE (V)
2.0
3.0
5.0
0
0.5
1.0
1.5
2.0
2.5
0
1.0
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Transfer Characteristics
Figure 8. Saturation Characteristics
30
2.8
PULSE DURATION = 80&s
PULSE DURATION = 80&s
DUTY CYCLE = 0.5% MAX
DUTY CYCLE = 0.5% MAX
2.4
2.0
1.6
1.2
0.8
0.4
26
ID = 35A
22
18
14
ID = 1A
ID = 32A
VGS = 10V
-80
-40
0
40
80
120
160
200
2
4
6
8
10
TJ, JUNCTION TEMPERATURE(oC)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 9. Drain to Source On Resistance vs Gate
Voltage and Drain Current
Figure 10. Normalized Drain to Source On
Resistance vs Junction Temperature
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5
Typical Characteristics TJ = 25°C unless otherwise noted
1.4
1.1
0.8
1.2
1.1
1.0
0.9
ID = 250&A
VGS = VDS, ID = 250&A
0.5
0.2
-80
-40
0
40
80
120
160
200
-80
-40
0
40
80
120
160
200
TJ, JUNCTION TEMPERATURE (oC)
TJ, JUNCTION TEMPERATURE (oC)
Figure 11. Normalized Gate Threshold Voltage vs
Junction Temperature
Figure 12. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
10000
10
VDD = 30V
Ciss
8
1000
6
Coss
4
Crss
100
WAVEFORMS IN
DESCENDING ORDER:
2
ID = 35A
ID = 1A
VGS = 0V, f = 1MHz
10
0
1
0.1
60
10
0
5
10
15
20
25
VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
Figure 13. Capacitance vs Drain to Source
Voltage
Figure 14. Gate Charge Waveforms for Constant
Gate Current
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6
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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