FDD6680AS [ONSEMI]
N 沟道，PowerTrench® SyncFET™ MOSFET，30V，55A，10.5mΩ;
| 型号： | FDD6680AS |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道，PowerTrench® SyncFET™ MOSFET，30V，55A，10.5mΩ |
| 文件： | 总10页 (文件大小：435K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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March 2015
FDD6680AS
30V N-Channel PowerTrench® SyncFET™
General Description
Features
The FDD6680AS is designed to replace a single
MOSFET and Schottky diode in synchronous DC:DC
power supplies. This 30V MOSFET is designed to
maximize power conversion efficiency, providing a low
• 55 A, 30 V
RDS(ON) max= 10.5 mΩ @ VGS = 10 V
RDS(ON) max= 13.0 mΩ @ VGS = 4.5 V
• Includes SyncFET Schottky body diode
• Low gate charge (21nC typical)
RDS(ON)
and low gate charge.
The FDD6680AS
includes an integrated Schottky diode using Fairchild’s
monolithic SyncFET technology. The performance of
the FDD6680AS as the low-side switch in
a
synchronous rectifier is indistinguishable from the
• High performance trench technology for extremely
performance of the FDD6680A in parallel with
Schottky diode.
a
low RDS(ON)
• High power and current handling capability
Applications
• DC/DC converter
• Low side notebook
.
D
D
G
G
S
TO-252
S
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
Parameter
Ratings
Unit
s
V
V
A
VDSS
VGSS
ID
Drain-Source Voltage
Gate-Source Voltage
30
±20
Drain Current – Continuous
– Pulsed
(Note 3)
(Note 1a)
(Note 1)
55
100
PD
W
Power Dissipation
60
(Note 1a)
(Note 1b)
3.1
1.3
TJ, TSTG
Operating and Storage Junction Temperature Range
–55 to +150
°C
Thermal Characteristics
Thermal Resistance, Junction-to-Case
(Note 1)
(Note 1a)
(Note 1b)
2.1
40
96
RθJC
RθJA
RθJA
°C/W
°C/W
°C/W
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
FDD6680AS
FDD6680AS
13’’
16mm
2500 units
FDD6680AS Rev. 1.2
©2008 Fairchild Semiconductor Corporation
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Drain-Source Avalanche Ratings (Note 2)
Single Pulse, VDD = 15 V,
ID=13.5A
WDSS
IAR
Drain-Source Avalanche Energy
Drain-Source Avalanche Current
54
205
mJ
A
13.5
Off Characteristics
Drain–Source Breakdown
Voltage
BVDSS
VGS = 0 V, ID = 1 mA
30
V
29
∆BVDSS
∆TJ
Breakdown Voltage Temperature ID = 1 mA, Referenced to 25°C
Coefficient
mV/°C
IDSS
Zero Gate Voltage Drain Current VDS = 24 V,
Gate–Body Leakage
VGS = 0 V
VDS = 0 V
500
µA
IGSS
nA
VGS = ±20 V,
±100
On Characteristics
(Note 2)
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 1 mA
1
1.4
–3
3
V
Gate Threshold Voltage
Temperature Coefficient
∆VGS(th)
∆TJ
ID = 1 mA, Referenced to 25°C
mV/°C
RDS(on)
Static Drain–Source
On–Resistance
VGS = 10 V,
GS = 4.5 V,
VGS= 10 V, ID = 12.5A, TJ= 125°C
ID = 12.5 A
ID = 10 A
8.6
10.3
12.5
10.5
13.0
16.0
mΩ
V
ID(on)
gFS
On–State Drain Current
VGS = 10 V,
VDS = 15 V,
VDS = 5 V
50
A
S
Forward Transconductance
ID = 12.5 A
44
Dynamic Characteristics
VDS = 15 V,
f = 1.0 MHz
V GS = 0 V,
Ciss
Input Capacitance
1200
pF
Coss
Crss
RG
Output Capacitance
350
120
1.6
pF
pF
Ω
Reverse Transfer Capacitance
Gate Resistance
VGS = 15 mV,
f = 1.0 MHz
Switching Characteristics (Note 2)
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
Turn–On Delay Time
10
6
20
12
45
22
25
23
32
20
29
15
ns
ns
ns
ns
ns
ns
ns
ns
nC
nC
nC
nC
Turn–On Rise Time
VDD = 15 V,
VGS = 10 V,
ID = 1 A,
RGEN = 6 Ω
Turn–Off Delay Time
Turn–Off Fall Time
28
12
14
13
20
11
21
11
3
Turn–On Delay Time
Turn–On Rise Time
VDD = 15 V,
VGS = 4.5 V,
ID = 1 A,
RGEN = 6 Ω
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge at Vgs=10V
Total Gate Charge at Vgs=5V
Gate–Source Charge
Gate–Drain Charge
Qg
Qg
(TOT)
V
DD = 15 V, ID = 12.5 A
Qgs
Qgd
4
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
4.4
0.7
A
V
VSD
VGS = 0 V, IS = 4.4 A
VGS = 0 V, IS = 7 A
IF = 12.5A,
(Note 2)
(Note 2)
0.5
0.6
17
Drain–Source Diode Forward
Voltage
trr
nS
nC
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
diF/dt = 300 A/µs
(Note 3)
Qrr
11
FDD6680AS Rev. 1.2
Electrical Characteristics
TA = 25°C unless otherwise noted
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) RθJA = 40°C/W when mounted on a
1in2 pad of 2 oz copper
b) RθJA = 96°C/W when mounted
on a minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
PD
3. Maximum current is calculated as:
RDS(ON)
where PD is maximum power dissipation at TC = 25°C and RDS(on) is at TJ(max) and VGS = 10V. Package current limitation is 21A
FDD6680AS Rev. 1.2
Typical Characteristics
100
2
1.8
1.6
1.4
1.2
1
VGS = 3.0V
VGS = 10V
4.0V
80
4.5V
6.0V
3.5V
60
40
20
0
3.5V
4.0V
4.5V
3.0V
5.0V
6.0V
10V
2.5V
0.8
0
20
40
60
80
100
0
0.5
1
1.5
2
2.5
3
VDS, DRAIN-SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.032
1.6
ID = 12.5A
GS =10V
ID = 6.3A
V
1.4
1.2
1
0.026
0.02
TA = 125oC
0.014
0.008
0.8
0.6
TA =25oC
2
4
6
8
10
-50
-25
0
25
50
75
100
125
150
TJ, JUNCTION TEMPERATURE (oC)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
100
VGS = 0V
VDS = 5V
80
60
40
20
0
10
1
TA = 125oC
TA = 125oC
25oC
-55oC
-55oC
0.1
0.01
25oC
3
1
1.5
2
2.5
3.5
4
4.5
0
0.2
0.4
0.6
0.8
1
VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDD6680AS Rev. 1.2
Typical Characteristics (continued)
10
1800
1500
1200
900
600
300
0
f = 1MHz
VGS = 0 V
ID = 12.5A
VDS = 10V
8
20V
6
Ciss
15V
4
Coss
2
0
Crss
0
5
10
15
20
25
0
5
10
15
20
25
30
Qg, GATE CHARGE (nC)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
100
1000
100
10
SINGLE PULSE
RθJA = 96°C/W
TA = 25°C
80
60
40
20
0
RDS(ON) LIMIT
100us
1ms
10ms
100ms
1s
10s
1
DC
VGS = 10V
SINGLE PULSE
RθJA = 96oC/W
TA = 25oC
0.1
0.01
0.01
0.1
1
10
100
0.001
0.01
0.1
1
10
100
1000
VDS, DRAIN-SOURCE VOLTAGE (V)
t1, TIME (sec)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
RθJA(t) = r(t) * RθJA
RθJA = 96 °C/W
0.2
0.1
0.1
0.05
P(pk
0.02
t1
t2
= P * RθJA(t)
Duty Cycle, D = t1 / t2
0.01
0.01
T - T
J A
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDD6680AS Rev. 1.2
Typical Characteristics (continued)
SyncFET Schottky Body Diode
Characteristics
Fairchild’s SyncFET process embeds a Schottky diode
in parallel with PowerTrench MOSFET. This diode
exhibits similar characteristics to a discrete external
Schottky diode in parallel with a MOSFET. Figure 12
shows the reverse recovery characteristic of the
FDD6680AS.
Schottky barrie diodes exhibit significant leakage at
high temperature and high reverse voltage. This will
increase the power in the device.
0.1
TA = 125oC
10nS/div
0.01
0.001
TA = 100oC
Figure 12. FDD6680AS SyncFET body diode
reverse recovery characteris
0.0001
TA = 25oC
For comparison purposes, Figure 13 shows the
reverse recovery characteristics of the body diode
of an equivalent size MOSFET produced without
SyncFET (FDD6680).
0.00001
0.000001
0
5
10
15
20
25
30
V
DS, REVERSE VOLTAGE (V)
Figure 14. SyncFET body diode reverse
leakage versus drain-source voltage and
temperature.
10nS/div
Figure 13. Non-SyncFET (FDD6680) body
diode reverse recovery characteristic.
FDD6680AS Rev. 1.2
Typical Characteristics
L
VDS
BVDSS
tP
VGS
RGE
VDS
VDD
+
-
IAS
DUT
VDD
0V
VGS
vary tP to obtain
tp
IAS
0.01Ω
required peak IAS
tAV
Figure 12. Unclamped Inductive Load Test
Figure 13. Unclamped Inductive
Waveforms
Circuit
Drain Current
Same type as
+
50kΩ
10V
10µF
-
1µF
+
VDD
QG(TOT)
-
VGS
10V
VGS
DUT
QGD
QGS
Ig(REF
Charge, (nC)
Figure 14. Gate Charge Test Circuit
Figure 15. Gate Charge Waveform
tON
td(ON)
tOFF
td(OFF
RL
tf
VDS
tr
VDS
)
90%
90%
+
-
VGS
RGEN
10%
10%
0V
DUT
VDD
90%
50%
VGS
50%
VGS
Pulse Width ≤ 1µs
Duty Cycle ≤ 0.1%
10%
0V
Pulse Width
Figure 16. Switching Time Test
Circuit
Figure 17. Switching Time Waveforms
FDD6680AS Rev. 1.2
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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