FDD8424H-F085A_技术文档

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Jan 2013

FDD8424H_F085A

tm

Dual N & P-Channel PowerTrench^®MOSFET

N-Channel: 40V, 20A, 24mΩ P-Channel: -40V, -20A, 54mΩ

Features

General Description

Q1: N-Channel

These dual N and P-Channel enhancement mode Power

MOSFETs are produced using Fairchild Semiconductor’s

advanced PowerTrench process that has been especially

tailored to minimize on-state resistance and yet maintain

superior switching performance.

Max r_DS(on)= 24mΩ at V_GS= 10V, I_D= 9.0A

Max r_DS(on)= 30mΩ at V_GS= 4.5V, I_D= 7.0A

Q2: P-Channel

Max r_DS(on)= 54mΩ at V_GS= -10V, I_D= -6.5A

Application

Inverter

Max r_DS(on)= 70mΩ at V_GS= -4.5V, I_D= -5.6A

Fast switching speed

H-Bridge

Qualified to AEC Q101

RoHS Compliant

D1

D2

D1/D2

G1

G2

S2

G1

S1

N-Channel

S2

P-Channel

Dual DPAK 4L

MOSFET Maximum Ratings ^T_C= 25°C unless otherwise noted

Symbol

V_DS

V_GS

Parameter

Q1

Q2

-40

±20

-20

-6.5

-40

35

Units

Drain to Source Voltage

Gate to Source Voltage

40

±20

20

V

Drain Current

- Continuous (Package Limited)

- Continuous (Silicon Limited)

- Continuous

T_C= 25°C

26

I_D

A

T_A= 25°C

9.0

55

- Pulsed

Power Dissipation for Single Operation

T_C= 25°C (Note 1)

T_A= 25°C (Note 1a)

T_A= 25°C (Note 1b)

(Note 3)

30

P_D

3.1

1.3

W

E_AS

Single Pulse Avalanche Energy

29

33

mJ

°C

T_J, T_STG

Operating and Storage Junction Temperature Range

-55 to +150

Thermal Characteristics

R_θJC

Thermal Resistance, Junction to Case, Single Operation for Q1

Thermal Resistance, Junction to Case, Single Operation for Q2

(Note 1)

4.1

3.5

°C/W

R_θJC

Package Marking and Ordering Information

Device Marking

Device

Package

Reel Size

13”

Tape Width

12mm

Quantity

FDD8424H

FDD8424H_F085A

TO-252-4L

2500 units

1

FDD8424H_F085A Rev.C1

www.fairchildsemi.com

Electrical Characteristics T_J= 25°C unless otherwise noted

Symbol

Parameter

Test Conditions

Type

Min

Typ

Max

Units

Off Characteristics

I_D= 250µA, V_GS= 0V

I_D= -250µA, V_GS= 0V

Q1

Q2

40

-40

BV_DSS

Drain to Source Breakdown Voltage

V

∆BV_DSS

∆T_J

Breakdown Voltage Temperature

Coefficient

I_D= 250µA, referenced to 25°C

Q1

Q2

34

-32

mV/°C

µA

I

_D= -250µA, referenced to 25°C

V

_DS= 32V, V_GS= 0V

Q1

Q2

1

-1

I_DSS

I_GSS

Zero Gate Voltage Drain Current

Gate to Source Leakage Current

V_DS= -32V, V_GS= 0V

Q1

Q2

±100

nA

V_GS= ±20V, V_DS= 0V

On Characteristics

V

_GS= V_DS, I_D= 250µA

Q1

Q2

1

-1

1.7

-1.6

3

-3

V_GS(th)

Gate to Source Threshold Voltage

V

V_GS= V_DS, I_D= -250µA

∆V_GS(th)

∆T_J

Gate to Source Threshold Voltage

Temperature Coefficient

I_D= 250µA, referenced to 25°C

I_D= -250µA, referenced to 25°C

Q1

Q2

-5.3

4.8

mV/°C

V

_GS= 10V, I_D= 9.0A

_GS= 4.5V, I_D= 7.0A

19

23

29

24

30

37

Q1

Q2

V_GS= 10V, I_D= 9.0A, T_J= 125°C

r_DS(on)

Static Drain to Source On Resistance

mΩ

V_GS= -10V, I_D= -6.5A

V_GS= -4.5V, I_D= -5.6A

V_GS= -10V, I_D= -6.5A, T_J= 125°C

42

58

62

54

70

80

V_DS= 5V, I_D= 9.0A

Q1

Q2

29

13

g_FS

Forward Transconductance

S

V

_DS= -5V, I_D= -6.5A

Dynamic Characteristics

Q1

Q2

750

1000

1330

Q1

C_iss

C_oss

C_rss

R_g

Input Capacitance

pF

Ω

V_DS= 20V, V_GS= 0V, f = 1MHZ

Q1

Q2

115

140

155

185

Output Capacitance

Reverse Transfer Capacitance

Gate Resistance

Q2

V_DS= -20V, V_GS= 0V, f = 1MHZ

Q1

Q2

75

115

Q1

Q2

1.1

3.3

f = 1MHz

Switching Characteristics

Q1

Q2

7

14

t_d(on)

t_r

t_d(off)

t_f

Turn-On Delay Time

Rise Time

ns

Q1

_DD= 20V, I_D= 9.0A,

V_GS= 10V, R_GEN= 6Ω

V

Q1

Q2

13

3

24

10

Q1

Q2

17

20

31

36

Q2

Turn-Off Delay Time

Fall Time

ns

V_DD= -20V, I_D= -6.5A,

V_GS= -10V, R_GEN= 6Ω

Q1

Q2

6

3

12

10

ns

Q1

Q2

14

17

20

24

Q_g(TOT)

Q_gs

Q_gd

Total Gate Charge

Gate to Source Charge

Gate to Drain “Miller” Charge

nC

Q1

V_GS= 10V, V_DD= 20V, I_D= 9.0A

Q1

Q2

2.3

3.0

Q2

Q1

Q2

3.2

3.6

V

_GS= -10V, V_DD= -20V, I_D= -6.5A

FDD8424H_F085A Rev.C1

2

www.fairchildsemi.com

Electrical Characteristics T_J= 25°C unless otherwise noted

Symbol

Parameter

Test Conditions

Type

Min

Typ

Max

Units

Drain-Source Diode Characteristics

V_GS= 0V, I_S= 9.0A

V_GS= 0V, I_S= -6.5A

(Note 2) Q1

(Note 2) Q2

0.87

0.88

1.2

-1.2

V_SD

t_rr

Source to Drain Diode Forward Voltage

Reverse Recovery Time

V

Q1

Q2

25

29

38

44

Q1

ns

nC

I_F= 9.0A, di/dt = 100A/s

Q2

I_F= -6.5A, di/dt = 100A/s

Q1

Q2

19

29

44

Q_rr

Reverse Recovery Charge

Notes:

2

1. R

is determined with the device mounted on a 1in pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R

is guaranteed by design while R is determined

θCA

θJA

θJC

by the user's board design.

b. 96°C/W when mounted on a

minimum pad of 2 oz copper

a. 40°C/W when mounted on

a 1 in pad of 2 oz copper

Q1

2

Scale 1 : 1 on letter size paper

a. 40°C/W when mounted on

b. 96°C/W when mounted on a

minimum pad of 2 oz copper

Q2

2

a 1 in pad of 2 oz copper

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%.

3. Starting T = 25°C, N-ch: L = 0.3mH, I = 14A, V = 40V, V = 10V; P-ch: L = 0.3mH, I = -15A, V = -40V, V = -10V.

J

AS

DD

GS

AS

DD

GS

FDD8424H_F085A Rev.C1

3

www.fairchildsemi.com

Typical Characteristics (Q1 N-Channel)^T_J^{= 25°C unless otherwise noted}

60

50

40

30

20

10

0

3.0

2.5

2.0

1.5

1.0

0.5

V_GS= 4.0V

PULSE DURATION = 80µs

DUTY CYCLE = 0.5%MAX

V_GS= 3.0V

V_GS= 10V

PULSE DURATION = 80µs

DUTY CYCLE = 0.5%MAX

V_GS= 4.0V

V_GS= 3.5V

V_GS= 4.5V

V_GS= 3.5V

V_GS= 3.0V

V_GS= 10V

50

0

1

2

3

4

0

10

20

30

40

60

I_D, DRAIN CURRENT(A)

V_DS, DRAIN TO SOURCE VOLTAGE (V)

Figure 1. On- Region Characteristics

Figure2. N o r m a l i z e d O n - R e s i s ta n c e

vs Drain Current and Gate Voltage

1.8

1.6

1.4

1.2

1.0

0.8

0.6

50

40

30

20

10

I_D= 9A

PULSE DURATION = 80µs

DUTY CYCLE = 0.5%MAX

I_D= 9A

V_GS= 10V

T_J= 125^oC

T_J= 25^oC

-75 -50 -25

0

25 50 75 100 125 150

2

4

6

8

10

T_J, JUNCTION TEMPERATURE (^oC)

V_GS, GATE TO SOURCE VOLTAGE (V)

F i gu re 3 . N orma li zed On -Res is ta nc e

vs Junction Temperature

Figure4. On-Resistance vs Gate to

Source Voltage

60

50

40

30

20

10

0

60

PULSE DURATION = 80µs

DUTY CYCLE = 0.5%MAX

V_GS= 0V

10

1

V_DS= 5V

T_J= 150^oC

T_J= 25^oC

0.1

T_J= 150^oC

T_J= 25^oC

T_J= -55^oC

0.01

T_J= -55^oC

0.001

0.0

0.3

0.6

0.9

1.2

1.5

2.0

2.5

3.0

3.5

4.0

4.5

V_SD, BODY DIODE FORWARD VOLTAGE (V)

V_GS, GATE TO SOURCE VOLTAGE (V)

Figure 5. Transfer Characteristics

Figure6. Source to Drain Diode

Forward Voltage vs Source Current

4

FDD8424H_F085A Rev.C1

www.fairchildsemi.com

Typical Characteristics (Q1 N-Channel)T_J= 25°C unless otherwise noted

10

8

2000

1000

I_D= 9A

C_iss

6

V_DD= 20V

V_DD= 15V

C_oss

4

V_DD= 25V

100

30

2

f = 1MHz

= 0V

C_rss

V

GS

0

0.1

1

10

40

0

4

8

Q , GATE CHARGE(nC)

12

16

100

80

V_DS, DRAIN TO SOURCE VOLTAGE (V)

g

Figure 7. Gate Charge Characteristics

Figure8. C a p a c i t a n c e v s D r a i n

to Source Voltage

30

25

20

15

10

5

30

Limited by Package

V_GS= 10V

T_J= 25^oC

10

T_J= 125^oC

V_GS= 4.5V

R_θJC= 4.1^oC/W

1

0.001

0

25

0.01

0.1

1

10

50

75

100

125

150

T_C, CASE TEMPERATURE (^oC)

t_AV, TIME IN AVALANCHE(ms)

Figure9. U n c l a m p e d I n d u c t i v e

Switching Capability

F i g u r e 1 0 . M a x i m u m C o n t i n u o u s D r a i n

Current vs CaseTemperature

100

10

1

10000

10us

FOR TEMPERATURES

o

V_GS= 10V

ABOVE 25 C DERATE PEAK

CURRENT AS FOLLOWS:

100us

1000

100

10

150 – T

C

I = I

-----------------------

25

125

THIS AREA IS

LIMITED BY r_DS(on)

T_C= 25^oC

SINGLE PULSE

1ms

T

_J= MAX RATED

_θJC= 4.1^oC/W

T_C= 25^oC

10ms

DC

SINGLE PULSE

_θJC= 4.1^oC/W

R

0.1

10^-5

10^-4

10^-3

t, PULSE WIDTH (s)

10^-2

10^-1

10⁰

10¹

1

10

V_DS, DRAIN to SOURCE VOLTAGE (V)

Figure 11. Forward Bias Safe

Operating Area

Figure12. Si n g l e P u l s e M a x i m u m

Power Dissipation

FDD8424H_F085A Rev.C1

5

www.fairchildsemi.com

Typical Characteristics (Q1 N-Channel)T_J= 25°C unless otherwise noted

2

DUTY CYCLE-DESCENDING ORDER

1

D = 0.5

0.2

0.1

0.05

0.02

0.01

P

DM

0.1

t

1

t

2

NOTES:

DUTY FACTOR: D = t /t

1

2

SINGLE PULSE

R_θJC= 4.1^oC/W

0.01

PEAK T = P

J

x Z

x R

+ T

DM

θJC

θJC C

0.005

10^-5

10^-4

10^-3

10^-2

10^-1

10⁰

10¹

t, RECTANGULAR PULSE DURATION (s)

Figure 13. Transient Thermal Response Curve

6

FDD8424H_F085A Rev.C1

www.fairchildsemi.com

Typical Characteristics (Q2 P-Channel)T_J= 25°C unless otherwise noted

3.0

2.5

2.0

1.5

1.0

0.5

40

30

20

10

0

V_GS= -3V

PULSE DURATION = 80µs

DUTY CYCLE = 0.5%MAX

PULSE DURATION = 80µs

DUTY CYCLE = 0.5%MAX

V_GS= -10V

V_GS= -3.5V

V_GS= -4.5V

V_GS= -4V

V_GS= -4.5V

V_GS= -3.5V

V_GS= -3V

V_GS= -10V

0

10

20

30

40

0

1

2

3

4

-V_DS, DRAIN TO SOURCE VOLTAGE (V)

-I_D, DRAIN CURRENT(A)

Figure 14. On- Region Characteristics

Figure 15. Normalized on-Resistance vs Drain

Current and Gate Voltage

1.6

160

I_D= -6.5A

PULSE DURATION = 80µs

DUTY CYCLE = 0.5%MAX

V_GS= -10V

1.4

1.2

1.0

0.8

0.6

120

I_D= -6.5A

T_J= 125^oC

80

40

T_J= 25^oC

0

-75 -50 -25

0

25 50 75 100 125 150

2

4

6

8

10

T_J, JUNCTION TEMPERATURE (^oC)

-V_GS, GATE TO SOURCE VOLTAGE (V)

Figure 17. On-Resistance vs Gate to

Source Voltage

Figure 16. Normalized On-Resistance

vs Junction Temperature

40

10

V_GS= 0V

PULSE DURATION = 80µs

DUTY CYCLE = 0.5%MAX

30

20

10

0

V_DS= -5V

1

0.1

T_J= 25^oC

T_J= 150^oC

T_J= 25^oC

T_J= -55^oC

0.01

0.001

T_J= 150^oC

T_J= -55^oC

0.0

0.3

0.6

0.9

1.2

1.5

1

2

3

4

5

-V_SD, BODY DIODE FORWARD VOLTAGE (V)

-V_GS, GATE TO SOURCE VOLTAGE (V)

Figure 18. Transfer Characteristics

Figure 19. Source to Drain Diode

Forward Voltage vs Source Current

FDD8424H_F085A Rev.C1

8

www.fairchildsemi.com

Typical Characteristics (Q2 P-Channel)T_J= 25°C unless otherwise noted

10

2000

1000

C_iss

I_D= -6.5A

8

V_DD= -15V

C_oss

V_DD= -20V

V_DD= -25V

6

4

C_rss

100

30

2

f = 1MHz

= 0V

V

GS

0

40

0.1

1

10

0

4

8

12

16

20

-V_DS, DRAIN TO SOURCE VOLTAGE (V)

Q , GATE CHARGE(nC)

g

Figure 21. Capacitance vs Drain

to Source Voltage

Figure 20. Gate Charge Characteristics

25

20

15

10

5

30

10

T_J= 25^oC

V_GS= -10V

T_J= 125^oC

V_GS= -4.5V

R

_θJC= 3.5^oC/W

1

0.001

0

0.01

0.1

1

10

100

25

50

75

100

125

150

T_C, CASE TEMPERATURE (^oC)

t_AV, TIME IN AVALANCHE(ms)

Figure 22. Unclamped Inductive

Switching Capability

Fi gu re 23. Max imu m Co nti nu ou s Dr ain

Current vs Case Temperature

11000

10

1

10000

V_GS= -10V

10us

FOR TEMPERATURES

o

ABOVE 25 C DERATE PEAK

100us

CURRENT AS FOLLOWS:

1000

100

10

150 – T

C

I = I

-----------------------

25

THIS AREA IS

LIMITED BY r_ds(on)

125

T_C= 25^oC

1ms

SINGLE PULSE

T_J= MAX RATED

10ms

R

_θJC= 3.5^oC/W

_C= 25^oC

SINGLE PULSE

R_θJC= 3.5^oC/W

DC

T

0.1

10^-510^-410^-310^-210^-110⁰10¹10²10³

t, PULSE WIDTH (s)

80

1

10

-V_DS, DRAIN to SOURCE VOLTAGE (V)

Figure24. Forward Bias Safe

Operating Area

Figure 25. Single Pulse Maximum

Power Dissipation

9

FDD8424H_F085A Rev.C1

www.fairchildsemi.com

Typical Characteristics (Q2 P-Channel)T_J= 25°C unless otherwise noted

2

1

DUTY CYCLE-DESCENDING ORDER

D = 0.5

0.2

0.1

P

DM

0.05

0.02

0.01

0.1

t

1

t

2

NOTES:

DUTY FACTOR: D = t /t

1

2

PEAK T = P

x Z

x R

+ T

SINGLE PULSE

J

DM

θJC

θJC C

0.01

R

_θJC= 3.5^oC/W

0.005

10^-5

10^-4

10^-3

10^-2

10^-1

10⁰

10¹

t, RECTANGULAR PULSE DURATION (s)

Figure 26. Transient Thermal Response Curve

10

FDD8424H_F085A Rev.C1

www.fairchildsemi.com

6.73

6.35

A

6.00 MIN

5.46

5.21

1.25

1.15

B

M

0.10

C

A

B

6.50 MIN

6.22

5.97

6.25

1.01

0.64

3.00 MIN

1

5

1.14

4.56

0.80 MIN

0.68

0.81

0.61

F

0.70

0.55

1.14

M

0.10

C

A

B

4.56

C

2.39

2.18

SEE

NOTE D

0.61

0.46

4.32 MIN

5.21 MIN

10.41

9.40

SEE DETAIL "A"

5

1

0.10

C

NOTES: UNLESS OTHERWISE SPECIFED

0.51

A. THIS PACKAGE CONFORMS TO JEDEC, TO252

VARIATION AD.

0.127 MAX

GAGE PLANE

SEATING PLANE

B. ALL DIMENSIONS ARE IN MILLIMETERS.

C. DIMENSIONS ARE EXCLUSIVE OF BURRS,

MOLD FLASH AND TIE BAR PROTRUSIONS

D. HEATSINK TOP EDGE COULD BE IN CHAMFERED

CORNERS OR EDGE PROTRUSION.

E. DIMENSIONS AND TOLERANCES AS PER ASME

Y14.5-2009.

1.78

1.40

F

(2.82)

F

EXCEPTION TO TO-252 STANDARD.

G. FILE NAME: TO252B05REV3

H. FAIRCHILDSEMICONDUCTOR

0-10°

0.61

0.46

DETAIL A

SCALE 2:1

ON Semiconductor and

are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.

ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent

coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.

ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,

regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or

specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer

application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not

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1


型号：	FDD8424H-F085A
厂家：	ONSEMI
描述：	40 V/-40 V、26/-20 A、24/54 mΩ、DPAK（4 引脚）N 沟道和 P 沟道 PowerTrench®
文件：	总12页 (文件大小：589K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

FDD8424H-F085A [ONSEMI]

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