FDD8445 [ONSEMI]
N 沟道 Power Trench® MOSFET 40V，50A，8.7mΩ;
| 型号： | FDD8445 |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道 Power Trench® MOSFET 40V，50A，8.7mΩ 开关 晶体管 |
| 文件： | 总9页 (文件大小：432K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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April 2015
FDD8445
®
N-Channel PowerTrench MOSFET
40V, 50A, 8.7m
Features
Applications
RDS(ON) = 6.7 m (Typ), VGS = 10V, ID=50A
Powertrain Management
Qg(10) = 45nC (Typ), VGS=10V
Low Miller Charge
Electronic Transmission
Distributed Power Architecture and VRMs
Low Qrr Body Diode
Primary Switch for 12V Systems
UIS Capability (Single Pulse/ Repetitive Pulse)
RoHS Compliant
D
G
S
©2007 Fairchild Semiconductor Corporation
FDD8445 Rev. 1.3
1
www.fairchildsemi.com
Absolute Maximum Ratings Tc = 25°C unless otherwise noted
Symbol
VDSS
VGS
Parameter
Ratings
40
Units
Drain to Source Voltage
Gate to Source Voltage
V
V
A
A
±20
Drain Current Continuous (VGS=10v) (Note 1)
Continuous (VGS=10v,with RJA = 52oC/W)
Pulsed
70
ID
15.2
Figure 4
1 4 4
EAS
S i n g l e P u l s e A v a l a n c h e E n e r g y ( N o t e 2 )
m J
W
W/oC
oC
Power Dissipation
Derate above 25oC
79
PD
0.53
TJ, TSTG
Operating and Storage Temperature
-55 to +175
Thermal Characteristics
RJC
RJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient TO-252, lin2 copper pad area
1.9
52
oC/W
oC/W
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
2500 units
FDD8445
FDD8445
TO-252AA
13”
16mm
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
ID = 250A, VGS = 0V
40
-
-
-
-
-
-
V
1
A
V
V
DS = 32V
GS = 0V
IDSS
TJ=150°C
-
250
100
IGSS
VGS = 20V
-
nA
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VDS = VGS, ID = 250A
2
-
2.8
6.7
4
V
ID = 50A, VGS = 10V
8.7
RDS(ON)
Drain to Source On Resistance
m
I
D = 50A, VGS = 10V,
-
12.5
16.3
TJ = 175°C
Dynamic Characteristics
CISS
COSS
CRSS
RG
Input Capacitance
-
-
-
-
-
-
-
-
-
-
3040
295
178
1.7
4050
390
270
-
pF
pF
pF
V
DS = 25V, VGS = 0V,
Output Capacitance
f = 1MHz
Reverse Transfer Capacitance
Gate Resistance
f = 1MHz
Qg(TOT)
Qg(5)
Qg(TH)
Qgs
Total Gate Charge at 10V
Total Gate Charge at 5V
Threshold Gate Charge
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
VGS = 0 to 10V
VGS = 0 to 5V
VGS = 0 to 2V
45
59
22
7.6
-
nC
nC
nC
nC
nC
nC
17
5.8
VDD=20V,
ID = 50A
12.5
9.5
Qgs2
Qgd
-
10.5
-
FDD8445 Rev. 1.3
2
www.fairchildsemi.com
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Switching Characteristics
t(on)
td(on)
tr
Turn-On Time
-
-
-
-
-
-
-
138
ns
ns
ns
ns
ns
ns
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Turn-Off Time
10
82
26
9.6
-
-
-
V
V
DD = 20V, ID = 50A
GS = 10V, RGS = 2
td(off)
tf
-
-
toff
53
Drain-Source Diode Characteristics
I
SD=50A
-
-
-
-
-
-
-
-
1.25
1.0
39
V
V
VSD
Source to Drain Diode Voltage
ISD=25A
trr
Reverse Recovery Time
IF= 50A, dIF/dt=100A/s
IF= 50A, dIF/dt=100A/s
ns
nC
Qrr
Reverse Recovery Charge
38
Notes:
1: Maximum package current capability is 50A.
o
2: Starting T = 25 C, L=0.18mH, I =40A.
J
AS
FDD8445 Rev. 1.3
3
www.fairchildsemi.com
Typical Characteristics
1.2
80
60
40
20
0
VGS=10V
CURRENT LIMITED
BY PACKAGE
1.0
0.8
0.6
0.4
0.2
0.0
0
25
50
75
100
125
150
175
25
50
75
100
125
150
175
TC, CASE TEMPERATURE(oC)
o
TC , CASE TEMPERATURE( C)
Figure 1. Normalized Power Dissipation vs Case
Temperature
Figure 2. Maximum Continuous Drain Current vs
Case Temperature
2
DUTY CYCLE - DESCENDING ORDER
1
D = 0.50
0.20
P
DM
0.10
0.05
0.1
0.02
0.01
t
1
t
2
NOTES:
DUTY FACTOR: D = t /t
1
2
PEAK T = P
x Z
x R
+ T
J
DM
JC
JC C
SINGLE PULSE
0.01
10-5
10-4
10-3
10-2
10-1
100
101
t, RECTANGULAR PULSE DURATION(s)
Figure 3. Normalized Maximum Transient Thermal Impedance
2000
1000
o
VGS = 10V
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
T
= 25 C
C
FOR TEMPERATURES
o
ABOVE 25 C DERATE PEAK
CURRENT AS FOLLOWS:
175 - T
150
C
I = I
25
100
SINGLE PULSE
10-5
10
10-4
10-3
10-2
10-1
100
101
t, RECTANGULAR PULSE DURATION(s)
Figure 4. Peak Current Capability
FDD8445 Rev. 1.3
4
www.fairchildsemi.com
Typical Characteristics
200
100
1000
If R = 0
= (L)(I )/(1.3*RATED BV
t
AV
- V
)
AS
DSS
DD
10us
If R
0
t
AV
= (L/R)ln[(I *R)/(1.3*RATED BV
- V ) +1]
DD
AS
DSS
100
100us
STARTING TJ = 25OC
10
10
CURRENT LIMITED
BY PACKAGE
1ms
STARTING TJ = 150OC
1
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(ON)
SINGLE PULSE
10ms
DC
TJ = MAX RATED
TC = 25oC
0.1
1
1
0.01
10
100
0.1
1
10
100
1000
tAV, TIME IN AVALANCHE (ms)
VDS, DRAIN-SOURCE VOLTAGE (V)
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 6. Unclamped Indutive Switching
Figure 5. Forward Bias Safe Operating Area
Capability
120
140
PULSE DURATION=80s
DUTY CYCLE=0.5% MAX
5.0V
120
100
80
60
40
20
0
VGS=10V
100
80
60
40
20
0
VDD = 6V
PULSE DURATION =80S
DUTY CYCLE =0.5% MAX
TJ = 175OC
TJ = 25OC
4.5V
TJ = - 55OC
4.0V
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
VDS, DRAIN TO SOURCE VOLTAGE (V)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 7. Transfer Characteristics
Figure 8. Saturation Characteristics
20
16
12
8
2.0
PULSE DURATION=80S
DUTY CYCLE=0.5%MAX
PULSE DURATION =80S
DUTY CYCLE =0.5% MAX
ID=12A
1.8
1.6
1.4
1.2
1.0
0.8
0.6
TJ = 175oC
TJ = 25oC
I
= 50A
D
V
= 10V
GS
4
-80
-40
0
40
80
120
160
200
3.5
10
4.5
6.0
7.5
9.0
TJ, JUNCTION TEMPERATURE(oC)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 10. Normalized Drain to Source On
Resistance vs Junction Temperature
Figure 9. Drain to Source On-Resistance
Variation vsGate to Source Voltage
FDD8445 Rev. 1.3
5
www.fairchildsemi.com
Typical Characteristics
1.10
1.05
1.00
0.95
0.90
1.2
VGS=VDS
ID =250A
1.1
ID =250A
1.0
0.9
0.8
0.7
0.6
0.5
-80
-40
0
40
80
120
160
200
-80
-40
0
40
80
120
160
200
TJ, JUNCTION TEMPERATURE (oC)
o
TJ, JUNCTION TEMPERATURE ( C)
Figure 11. Normalized Gate Threshold Voltage vs
Junction Temperature
Figure 12. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
10000
10
VDD=15V
ID=50A
f = 1MHz
CISS
VGS = 0V
8
VDD=20V
VDD=25V
6
1000
COSS
4
2
0
CRSS
100
0.1
0
20
40
60
1
10
40
Qg , GATE CHARGE (nC)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 13. Capacitance vs Drain to Source
Voltage
Figure 14. Gate Charge vs Gate to Source
Voltage
FDD8445 Rev. 1.3
6
www.fairchildsemi.com
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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相关型号：
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FAIRCHILD
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