FDD8451 [ONSEMI]
N 沟道 PowerTrench® MOSFET 40V，28A，24mΩ;
| 型号： | FDD8451 |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道 PowerTrench® MOSFET 40V，28A，24mΩ 开关 脉冲 晶体管 |
| 文件： | 总8页 (文件大小：456K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
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March 2015
FDD8451
N-Channel PowerTrench® MOSFETꢀ
40V, 28A, 24m:
Features
General Description
Max rDS(on) 24m: at VGS = 10V, ID = 9A
This N-Channel MOSFET has been designed specifically
to improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, fast
Max rDS(on) 30m: at VGS = 4.5V, ID = 7A
Low gate charge
switching speed and extremely low rDS(on)
.
Fast Switching
Application
High performance trench technology for extremely low
rDS(on)
DC/DC converter
Backlight inverter
RoHS compliant
D
G
S
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDS
VGS
Parameter
Ratings
Units
Drain to Source Voltage
Gate to Source Voltage
40
V
V
20
Drain Current -Continuousꢀ@TC=25°C
-Continuous @TA=25°Cꢀ
-Pulsed
28
ID
9
78
A
(Note 1a)
EAS
Single Pulse Avalanche Energy
Power Dissipation
(Note 3)
20
mJ
W
PD
30
TJ, TSTG
Operating and Storage Temperature
-55 to 150
°C
Thermal Characteristics
RTJC
RTJA
RTJA
Thermal Resistance, Junction to Case
4.1
40
96
°C/W
°C/W
°C/W
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
(Note 1a)
(Note 1b)
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FDD8451
FDD8451
D-PAK(TO-252)
13’’
16mm
2500 units
©2009 Fairchild Semiconductor Corporation
FDD8451 Rev. 1.2
1
www.fairchildsemi.com
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250PA, VGS = 0V
40
V
'BVDSS
ꢀꢀꢀ'TJ
Breakdown Voltage Temperature
Coefficient
ID = 250PA, referenced to
25°C
33.5
mV/°C
IDSS
IGSS
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
VDS = 32V, VGS = 0V
1
PA
nA
VGS
=
20V, VDS = 0V
100
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250PA
1
2.1
3
V
ꢀ'VGS(th)
ꢀꢀꢀ'TJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = 250PA, referenced to
25°C
-5.7
mV/°C
VGS = 10V, ID = 9A
19
23
24
30
V
GS = 4.5V, ID = 7A
rDS(on)
Drain to Source On Resistance
Forward Transcondductance
m:
VGS = 10V, ID = 9A
TJ = 150°C
32
29
41
gFS
VDS = 5V, ID = 9A
S
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
780
112
72
990
150
110
pF
pF
pF
:
VDS = 20V, VGS = 0V,
f = 1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
f = 1MHz
1.1
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
7
3
14
10
34
10
20
11
ns
ns
VDD = 20V, ID = ꢁA
VGS = 10V, RGEN = 6:
Turn-Off Delay Time
Fall Time
19
2
ns
ns
Qg
Total Gate Charge at 10V
Total Gate Charge at 5V
Gate to Source Gate Charge
Gate to Drain “Miller”Charge
16
8.6
2.5
3.7
nC
nC
nC
nC
Qg
VDS= 20V, ID = 9A
VGS = 10V
Qgs
Qgd
Drain-Source Diode Characteristics
VSD
trr
Source to Drain Diode Forward Voltage VGS = 0V, IS = 9A
0.87
25
1.2
38
29
V
Reverse Recovery Time
IF = 9A, di/dt = 100A/Ps
IF = 9A, di/dt = 100A/Ps
ns
nC
Qrr
Reverse Recovery Charge
19
Notes:
R
1:
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
is determined by the user’s board design.
TJA
the drain pins. R
is guaranteed by design while R
TJCꢀ
TJA
a)
b)
40 °C/W when mounted on a
2
96 °C/W when mounted on
a minimum pad
1 in pad of 2 oz copper
2: Pulse Test: Pulse Width < 300 Ps, Duty cycle < 2.0%.
3: Starting T = 25 °C, L = 0.1 mH, I = 20 A, V = 36 V, V = 10 V.
J
AS
DD
GS
FDD8451 Rev. 1.2
2
www.fairchildsemi.com
Typical Characteristics TJ = 25°C unless otherwise noted
4.0
60
50
40
30
20
10
0
PULSE DURATION = 80Ps
DUTY CYCLE = 0.5%MAX
V
= 10V
PULSE DURATION = 80Ps
DUTY CYCLE = 0.5%MAX
GS
3.5
3.0
2.5
2.0
1.5
1.0
0.5
V
= 4V
GS
V
= 3V
GS
VGS = 3.5V
V
= 4.5V
V
GS
= 3.5V
= 3V
GS
VGS = 4V
VGS = 5V
V
VGS = 10V
GS
0
10
20
30
40
50
60
0
1
2
3
4
ID, DRAIN CURRENT(A)
V
, DRAIN TO SOURCE VOLTAGE (V)
DS
Figure 1. On Region Characteristics
Figure 2. Normalized On-Resistance vs Drain
Current and Gate Voltage
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
160
I
= 9A
PULSE DURATION = 80Ps
DUTY CYCLE = 0.5%MAX
D
I
D
= 10A
V
= 10V
GS
120
80
40
0
T = 175oC
J
T
= 25oC
J
-80
-40
0
40
80
120
160
200
2
4
6
8
10
TJ, JUNCTION TEMPERATURE (oC)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On Resistance vs Junction
Temperature
Figure 4. On-Resistance vs Gate to Source
Voltage
40
100
V
GS
= 0V
PULSE DURATION = 80Ps
DUTY CYCLE = 0.5%MAX
10
1
30
20
T = 175oC
J
T
J
= 25oC
T = 175oC
J
0.1
T
J
= -55oC
10
T
J
= 25oC
0.01
T
J
= -55oC
0
1E-3
1.5
2.0
2.5
3.0
3.5
4.0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
VGS, GATE TO SOURCE VOLTAGE (V)
V , BODY DIODE FORWARD VOLTAGE (V)
SD
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode Forward
Voltage vs Source Current
FDD8451 Rev. 1.2
3
www.fairchildsemi.com
Typical Characteristics TJ = 25°C unless otherwise noted
10
3000
C
iss
1000
100
10
8
6
4
2
0
V
= 15V
DD
C
oss
V
= 20V
DD
V
DD
= 25V
C
rss
f = 1MHz
= 0V
V
GS
0
4
8
12
16
0.1
1
10
40
VDS, DRAIN TO SOURCE VOLTAGE (V)
Q , GATE CHARGE(nC)
g
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs Drain to Source Voltage
100
30
25
o
= 25 C
V
= 10V
20
15
10
5
GS
T
J
10
o
T
J
= 125 C
V
GS
=4.5V
o
T
J
= 150 C
o
= 4.1 C/W
R
TJC
1
1E-3
0
0.01
t
0.1
1
10
100
175
100 120 140 160
40
60
80
, TIME IN AVALANCHE(ms)
AV
TC, CASE TEMPERATURE(oC)
Figure 9. Unclamped Inductive Switching
Capability
Figure 10. Maximum Continuous Drain Current vs
Case Temperature
10000
100
o
T
= 25 C
C
100us
VGS = 10V
FOR TEMPERATURES
o
ABOVE 25 C DERATE PEAK
CURRENT AS FOLLOWS:
1ms
1000
100
10
10
175 – T
---------------------
150
C
I = I
25
LIMITED BY
PACKAGE
OPERATION IN THIS
1
AREA MAY BE
10ms
LIMITED BY r
DS(on)
SINGLE PULSE
= MAX RATED
= 25OC
100ms
DC
T
J
SINGLE PULSE
T
C
0.1
1
10-5
10-4
10-3
t, PULSE WIDTH (s)
10-2
10-1
100
101
80
10
V , DRAIN-SOURCE VOLTAGE (V)
DS
Figure 11. Forward Bias Safe Operating Area
Figure 12. Single Pulse Maximum Power
Dissipation
FDD8451 Rev. 1.2
4
www.fairchildsemi.com
Typical Characteristics TJ = 25°C unless otherwise noted
2
1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
P
DM
0.05
0.02
0.1
0.01
t
1
t
2
NOTES:
DUTY FACTOR: D = t /t
SINGLE PULSE
0.01
1
2
PEAK T = P
J
x Z
x R
+ T
TJC C
DM
TJC
0.005
10-5
10-4
10-3
10-2
10-1
100
101
t, RECTANGULAR PULSE DURATION (s)
Figure 13. Transient Thermal Response Curve
FDD8451 Rev. 1.2
5
www.fairchildsemi.com
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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