FDD850N10LD [ONSEMI]
BoostPak（N 沟道，PowerTrench® MOSFET + 二极管），100 V，15.3A，75 mΩ;
| 型号： | FDD850N10LD |
| 厂家： | 
ONSEMI |
| 描述： | BoostPak（N 沟道，PowerTrench® MOSFET + 二极管），100 V，15.3A，75 mΩ 开关 脉冲 晶体管 二极管 |
| 文件： | 总13页 (文件大小：1124K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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2014 年2 月
FDD850N10LD
®
BoostPak （N 沟道PowerTrench MOSFET + 二极管）
100 V, 15.3 A, 75 mΩ
特性
•
说明
此N 沟道MOSFET采用飞兆半导体的PowerTrench® 工艺生产，
这一先进工艺是专为最大限度地降低导通电阻并保持卓越开关性
能而定制的。
RDS(on) = 61 mΩ (Typ.)@VGS = 10 V, ID = 12 A
•
RDS(on) = 64 mΩ (Typ.)@VGS = 5.0 V, ID = 12 A
• 低栅极电荷（典型值22.2 nC)
• 低Crss （典型值42 pF)
• 快速开关
NP 二极管为超快速整流器，具有低正向压降和出色的开关性
能。
应用
•
100% 经过雪崩测试
•
•
•
LED 显示器背光
LED 电视背光
LED 照明
• 改善的dv/dt 处理能力
• 符合RoHS 标准
• 消费类家用电器，
DC-DC 转换器（升压和降压）
3
3
1. 栅极
2. 源极
4,5
3. 漏极/ 阳极
4. 阴极
5. 阴极
1
1
2
4
TO252-5L
5
2
最大额定值TC = 25°C 除非另有说明。
FDD850N10LD
符号
参数
单位
VDSS
VGSS
100
±20
15.3
9.7
46
V
漏极－源极电压
栅极－源极电压
V
- 连续(TC = 25°C)
- 连续(TC = 100°C)
- 脉冲
ID
A
漏极电流
IDM
A
mJ
V/ns
W
漏极电流
（说明1）
（说明2）
（说明3）
EAS
dv/dt
41
单脉冲雪崩能量
二极管恢复dv/dt 峰值
6.0
42
(TC = 25°C)
PD
功耗
0.33
5
W/°C
A
- 降低至25°C 以上
IF(AV)
IFSM
二极管平均整流正向电流(TC = 138°C)
二极管非重复峰值浪涌电流60 Hz 半正弦波
工作和存储温度范围
50
A
TJ, TSTG
TL
°C
-55 至+150
300
°C
用于焊接的最大引线温度，距离外壳1/8"，持续5 秒
热性能
FDD850N10LD
符号
RθJC
参数
MOSFET 结至外壳热阻最大值
二极管结至外壳热阻最大值
结至环境热阻最大值
单位
3.0
2.5
87
RθJC
°C/W
RθJA
www.fairchildsemi.com
© 2013 飞兆半导体公司
1
FDD850N10LD Rev. C2
封装标识与定购信息
器件编号
顶标
封装
包装方法
卷带
卷尺寸
带宽
数量
FDD850N10LD
850N10LD
TO-252 5L
13”
16 mm
2500 装
MOSFET 的电气特性TC = 25°C 除非另有说明。
符号
参数
测试条件
最小值 典型值 最大值
单位
关断特性
BVDSS
ID = 250 μA, VGS = 0 V
D = 250 μA，温度参考25°C
100
-
-
-
-
V
漏极－源极击穿电压
ΔBVDSS
/ ΔTJ
击穿电压温度系数
I
0.1
V/°C
VDS = 80 V, VGS = 0 V
VDS = 80 V, TC = 125°C
VGS = ±20 V, VDS = 0 V
-
-
-
-
-
-
1
IDSS
IGSS
μA
零栅极电压漏极电流
500
±100
nA
栅极- 体漏电流
导通特性
VGS(th)
VGS = VDS, ID = 250 μA
VGS = 10 V, ID = 12 A
VGS = 5 V, ID =12 A
1.0
-
2.5
75
96
-
V
mΩ
S
栅极阈值电压
-
-
-
61
64
31
RDS(on)
gFS
漏极至源极静态导通电阻
正向跨导
VDS = 10 V, ID = 15.3 A
动态特性
Ciss
-
-
-
-
-
-
-
-
1100
80
1465
pF
pF
pF
nC
nC
nC
nC
Ω
输入电容
VDS = 25 V, VGS = 0 V,
f = 1 MHz
Coss
105
输出电容
Crss
42
-
反向传输电容
Qg(tot)
Qg(tot)
Qgs
22.2
12.3
3.0
28.9
10 V 的栅极电荷总量
5 V 的栅极电荷总量
栅极- 源极栅极电荷
栅极- 漏极“ 米勒” 电荷
等效串联电阻(G-S)
16.0
V
DS = 80 V, ID = 15.3 A
-
-
-
（说明4）
Qgd
5.7
ESR
f = 1 MHz
1.75
开关特性
td(on)
tr
td(off)
tf
-
-
-
-
17
21
27
8
44
52
64
26
ns
ns
ns
ns
导通延迟时间
开通上升时间
关断延迟时间
关断下降时间
VDD = 50 V, ID = 15.3 A,
V
GS = 5 V, RG = 4.7 Ω
（说明4）
漏极- 源极二极管特性
IS
-
-
-
-
-
-
-
15.3
46
1.3
-
A
A
漏极- 源极二极管最大正向连续电流
漏极- 源极二极管最大正向脉冲电流
漏极- 源极二极管正向电压
反向恢复时间
ISM
VSD
trr
VGS = 0 V, ISD = 12 A
-
V
38
50
ns
nC
VGS = 0 V, ISD = 15.3 A, VDS = 80 V,
dIF/dt = 100 A/μs
Qrr
-
反向恢复电荷
注意：
1. 重复额定值：脉冲宽度受限于最大结温。
2. L = 1 mH，I = 9.1 A，R = 25 Ω，启动T = 25°C。
AS
G
J
3. I ≤ 15.3 A，di/dt ≤ 200 A/μs，V ≤ BV
，启动T = 25°C。
J
SD
DD
DSS
4. 本质上独立于工作温度的典型特性。
www.fairchildsemi.com
© 2013 飞兆半导体公司
2
FDD850N10LD Rev. C2
二极管的电气特性TC = 25°C 除非另有说明。
符号
参数
测试条件
最小值 典型值 最大值
单位
VR
IR = 250 μA
150
-
-
-
V
直流阻断电压
T
C = 25°C
-
-
2.5
VFM
IF = 5 A
V
uA
ns
A
最大瞬时正向电压
TC = 125°C
TC = 25°C
TC = 125°C
0.9
-
-
-
50
IRM
trr
最大瞬时反向电流@ 额定值VR
二极管反向恢复时间
-
-
1000
T
C = 25°C
TC = 125°C
C = 25°C
TC = 125°C
C = 25°C
TC = 125°C
-
10.7
14.5
2.2
3.4
11.7
24.7
-
22
-
-
IF = 5 A,
dI/dt = 200 A/μs
T
-
5
-
Irr
二极管反向恢复峰值电流
-
T
-
-
Qrr
nC
mJ
二极管反向恢复电荷
-
-
WAVL
10
-
雪崩能量(L = 40 mH)
www.fairchildsemi.com
© 2013 飞兆半导体公司
3
FDD850N10LD Rev. C2
典型性能特征- MOSFET
图1. 导通区域特性
图2. 传输特性
46
46
VGS = 15.0V
*Notes:
1. VDS = 10V
10.0V
6.0V
5.0V
3.5V
3.0V
2. 250μs Pulse Test
10
1
150oC
10
25oC
-55oC
*Notes:
1. 250μs Pulse Test
2. TC = 25oC
1
0.1
0.1
1
10
0
2
4
6
VDS, Drain-Source Voltage[V]
VGS, Gate-Source Voltage[V]
图3. 导通电阻变化与漏极电流和栅极电压
图4. 体二极管正向电压变化vs. 源极电流和温度
46
0.20
0.16
150oC
25oC
10
0.12
VGS = 5V
0.08
VGS = 10V
0.04
*Notes:
1. VGS = 0V
*Note: TC = 25oC
40 50
2. 250μs Pulse Test
1
0.2
0.00
0.4
0.6
0.8
1.0
1.2
1.4
0
10
20
30
VSD, Body Diode Forward Voltage [V]
ID, Drain Current [A]
图5. 电容特性
图6. 栅极电荷特性
10
5000
C
C
C
= C + C (C = shorted)
gs gd ds
iss
= C + C
ds
= C
gd
oss
rss
gd
VDS = 20V
8
6
4
2
0
VDS = 50V
VDS = 80V
1000
Ciss
Coss
100
*Note:
1. VGS = 0V
Crss
*Note: ID = 15.3A
16 20
2. f = 1MHz
10
0.1
0
4
8
12
24
1
10
100
Qg, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
www.fairchildsemi.com
© 2013 飞兆半导体公司
4
FDD850N10LD Rev. C2
典型性能特征- MOSFET （续）
图7. 击穿电压变化vs. 温度
图8. 导通电阻变化vs. 温度
1.15
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1.10
1.05
1.00
0.95
0.90
*Notes:
1. VGS = 0V
*Notes:
1. VGS = 10 V
2. ID = 250μA
2. ID = 12 A
-100
-50
0
50
100
150
200
-100
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
TJ, Junction Temperature [oC]
图9. 最大安全工作区
图10. 最大漏极电流vs. 外壳温度
100
18
15
100μs
10
1
12
VGS = 10V
1ms
10ms
100ms
9
VGS = 5V
Operation in This Area
is Limited by R DS(on)
6
3
DC
*Notes:
0.1
1. TC = 25oC
2. TJ = 150oC
RθJC = 3.0oC/W
3. Single Pulse
0.01
0
25
0.1
1
10
100 200
50
75
100
125
150
TC, Case Temperature [oC]
VDS, Drain-Source Voltage [V]
www.fairchildsemi.com
© 2013 飞兆半导体公司
5
FDD850N10LD Rev. C2
典型性能特征- 二极管（续）
图11. 二极管正向压降与正向电流
图12. 二极管反向电流与反向电压
5000
50
1000
TC = 125oC
100
TC = 125oC
10
TC = 75oC
TC = 25oC
TC = 75oC
10
1
TC = 25oC
0.1
1
0.0
10
20
40
60
80
100
120
0.5
1.0
1.5
2.0
2.5
Reverse Voltage, VR [V]
Forward Voltage, VF [V]
图13. 二极管结电容
200
图14. 二极管反向恢复时间与di/dt
20
IF = 5A
Typical Capacitance
at 0V = 183 pF
150
100
50
TC = 125oC
15
TC = 75oC
10
TC = 25oC
5
100
0
0.1
200
300
di/dt [A/μs]
400
500
1
10
100
Reverse Voltage, VR [V]
图15. 二极管反向恢复电流与di/dt
图16. 二极管正向电流降额曲线
30
8
T
= 125oC
25
20
15
10
5
C
6
4
2
0
TC = 75oC
T
= 25oC
C
IF = 5A
500
0
25
50
75
100
125
150
100
200
300
di/dt [A/μs]
400
Case temperature, TC [oC]
www.fairchildsemi.com
© 2013 飞兆半导体公司
6
FDD850N10LD Rev. C2
典型性能特征（接上页）
图17. 瞬态热响应曲线MOSFET
4
1
0.5
0.2
0.1
PDM
0.05
0.02
t1
0.1
t2
0.01
*Notes:
Single pulse
1. ZθJC(t) = 3.0oC/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZθJC(t)
0.01
10-5
10-4
10-3
10-2
10-1
1
t1，矩形脉冲持续时间[ 秒]
图18. 瞬态热响应曲线二极管
3
1
0.5
0.2
0.1
PDM
0.05
0.1
t1
0.02
0.01
t2
*Notes:
1. ZθJC(t) = 2.5oC/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZθJC(t)
Single pulse
0.01
10-5
10-4
10-3
10-2
10-1
1
t1，矩形脉冲持续时间[ 秒]
www.fairchildsemi.com
© 2013 飞兆半导体公司
7
FDD850N10LD Rev. C2
I
= 常量
G
图19. 栅极电荷测试电路与波形
RL
VDS
90%
VDS
VDD
VGS
RG
10%
VGS
DUT
V
GS
td(on)
tr
td(off)
tf
t on
t off
图20. 阻性开关测试电路与波形
VGS
图21. 非箝位感性开关测试电路与波形
www.fairchildsemi.com
© 2013 飞兆半导体公司
8
FDD850N10LD Rev. C2
+
DUT
VDS
_
I SD
L
Driver
RG
Same Type
as DUT
VDD
VGS
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
--------------------------
VGS
D =
Gate Pulse Period
10V
( Driver )
IFM , Body Diode Forward Current
I SD
di/dt
( DUT )
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
图22. 二极管恢复dv/dt 峰值测试电路与波形
www.fairchildsemi.com
© 2013 飞兆半导体公司
9
FDD850N10LD Rev. C2
机械尺寸
图23. TO252 (D-PAK)，模塑，5 引脚，选项AD
封装图纸作为一项服务，提供给考虑飞兆半导体元件的客户。具体参数可能会有变化，且不会做出相应通知。请注意图纸上的版本和 /
或日期，并联系飞兆半导体代表核实或获得最新版本。封装规格并不扩大飞兆公司全球范围内的条款与条件，尤其是其中涉及飞兆公司
产品保修的部分。
随时访问飞兆半导体在线封装网页，可以获取最新的封装图纸：
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT252-005
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© 2013 飞兆半导体公司
10
FDD850N10LD Rev. C2
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
AccuPower™
AX-CAP *
BitSiC™
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
F-PFS™
FRFET
Sync-Lock™
®*
®
®
®
®
Global Power ResourceSM
GreenBridge™
Green FPS™
PowerTrench
PowerXS™
Programmable Active Droop™
QFET
QS™
Quiet Series™
RapidConfigure™
™
®
TinyBoost
TinyBuck
®
®
Green FPS™ e-Series™
Gmax™
GTO™
TinyCalc™
®
TinyLogic
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
TranSiC™
TriFault Detect™
Current Transfer Logic™
IntelliMAX™
®
DEUXPEED
ISOPLANAR™
Marking Small Speakers Sound Louder
and Better™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MicroPak2™
MillerDrive™
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®
EcoSPARK
Saving our world, 1mW/W/kW at a time™
SignalWise™
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ESBC™
®
TRUECURRENT *
μSerDes™
SMART START™
®
Solutions for Your Success™
®
®
SPM
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SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
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OPTOLOGIC
OPTOPLANAR
FACT
FAST
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*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
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As used here in:
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and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
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2. A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
ANTI-COUNTERFEITING POLICY
Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website,
www.Fairchildsemi.com, under Sales Support.
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their
parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed
application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the
proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild
Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild
Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of
up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and
warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is
committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Advance Information
Formative / In Design
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
Preliminary
First Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
No Identification Needed
Obsolete
Full Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Not In Production
Rev. I66
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FDD850N10LD Rev. C2
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