FDD86067-F085 [ONSEMI]
N-Channel PowerTrench® MOSFET 100V, 94A, 5.7 mΩ;
| 型号： | FDD86067-F085 |
| 厂家： | 
ONSEMI |
| 描述： | N-Channel PowerTrench® MOSFET 100V, 94A, 5.7 mΩ |
| 文件： | 总8页 (文件大小：313K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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www.onsemi.com
onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi
product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without
notice. The information herein is provided “as-is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality,
or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all
liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,
regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
MOSFET - Power, Single
N-Channel
100 V, 5.7 mW, 94 A
FDD86067-F085
Features
• Low R
to Minimize Conduction Losses
• Low Q and Capacitance to Minimize Driver Losses
www.onsemi.com
DS(on)
G
• Wettable Flank for Enhanced Optical Inspection
• AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR−Free and are RoHS
Compliant
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
100 V
5.7 mW @ 10 V
94 A
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
D
Parameter
Drain−to−Source Voltage
Symbol
Value
100
20
Unit
V
V
DSS
Gate−to−Source Voltage
V
GS
V
G
Continuous Drain
Current R
T
= 25°C
= 100°C
= 25°C
I
94
A
C
D
q
JC
T
C
67
S
(Notes 1, 3)
Steady
State
POWER MOSFET
Power Dissipation
T
C
P
107
53.6
16
W
A
D
R
(Note 1)
q
JC
T
C
= 100°C
D
Continuous Drain
Current R
T = 25°C
A
I
D
q
JA
T = 100°C
A
11
(Notes 1, 2, 3)
Steady
State
G
Power Dissipation
T = 25°C
A
P
3.1
1.6
598
W
D
S
R
(Notes 1, 2)
q
JA
D−PAK
CASE 369AS
T = 100°C
A
Pulsed Drain Current
T = 25°C, t = 10 ms
I
DM
A
A
p
Operating Junction and Storage Temperature
Range
T , T
−55 to
+175
°C
J
stg
MARKING DIAGRAM
Source Current (Body Diode)
I
85.7
535
A
S
Single Pulse Drain−to−Source Avalanche
E
AS
mJ
&Z&3&K
FDD
86067
Energy (I
= 7.3 A)
L(pk)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
&Z
&3
&K
= Assembly Plant Code
= Data Code (Year & Week)
= Lot
Parameter
Symbol
Value
1.4
Unit
Junction−to−Case − Steady State
Junction−to−Ambient − Steady State (Note 2)
R
°C/W
q
JC
FDD86067
= Specific Device Code
R
47.8
q
JA
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
2
2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
© Semiconductor Components Industries, LLC, 2020
1
Publication Order Number:
October, 2020 − Rev. 0
FDD86067−F085/D
FDD86067−F085
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
GS
= 0 V, I = 250 mA
100
V
(BR)DSS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/T
J
56
mV/°C
(BR)DSS
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
I
V
V
= 0 V, V = 100 V
1
mA
DSS
GS
DS
I
= 0 V, V
=
20 V
100
nA
GSS
DS
GS
V
V
GS
= V , I = 250 mA
2
3.3
−9
5
4.5
5.7
V
GS(TH)
DS
D
Threshold Temperature Coefficient
Drain−to−Source On Resistance
CHARGES AND CAPACITANCES
Input Capacitance
V
/T
J
mV/°C
mW
GS(TH)
R
V
= 10 V, I = 38 A
DS(on)
GS
D
C
2600
1500
19
33
5
pF
nC
iss
V
= 0 V, f = 1 MHz,
DS
GS
Output Capacitance
C
oss
V
= 50 V
Reverse Transfer Capacitance
Total Gate Charge
C
rss
Q
V
= 10 V, V = 50 V, I = 38 A
GS DS D
G(TOT)
Threshold Gate Charge
Q
V
GS
= 0 to 2 V
G(TH)
Gate−to−Source Charge
Gate−to−Drain “Miller” Charge
Plateau Voltage
Q
12
6
GS
GD
GP
Q
V
V
DD
= 50 V, I = 39 A
D
5
V
SWITCHING CHARACTERISTICS
Turn−On Delay Time
t
13
29
28
22
ns
d(on)
Turn−On Rise Time
t
r
V
= 50 V, V = 10 V,
GS
DD
D
I
= 38 A, R = 6 W
G
Turn−Off Delay Time
t
d(off)
Turn−Off Fall Time
t
f
DRAIN−SOURCE DIODE CHARACTERISTICS
Source−to−Drain Diode Voltage
Reverse Recovery Time
V
I
= 38 A, V = 0 V
0.9
15
1.25
23
V
SD
RR
SD
GS
t
ns
nC
V
= 0 V, dI /dt = 100 A/ms,
S
GS
I
S
= 38 A
Reverse Recovery Charge
Q
123
225
RR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
5. Switching characteristics are independent of operating junction temperatures.
DEVICE ORDERING INFORMATION
†
Device
Marking
Package
Reel Size
Tape Width
Shipping
FDD86067−F085
FDD86067
DPAK (TO−252)
(Pb−Free)
13″
16 mm
2500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
www.onsemi.com
2
FDD86067−F085
TYPICAL CHARACTERISTICS
300
250
200
150
100
300
10 V
V
GS
= 15 V
8.0 V
7.0 V
V
= 5 V
DS
250
200
150
100
T = 25°C
J
6.0 V
T = 25°C
J
5.5 V
5.0 V
50
0
50
0
T = 175°C
J
T = −55°C
J
0
1
2
3
4
5
3
4
5
6
7
8
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
7
6
5
25
20
15
10
V
= 10 V
I
= 38 A
GS
D
T = 25°C
J
T = 175°C
J
4
3
5
0
T = 25°C
J
4
5
6
7
8
9
10
0
20
40
60
80
100
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 3. On−Resistance vs. Gate−to−Source
Figure 4. On−Resistance vs. Drain Current and
Voltage
Gate Voltage
100
10
1
2.2
2.0
1.8
1.6
1.4
V
GS
= 0 V
T = 175°C
J
V
= 10 V
= 38 A
GS
I
D
T = 150°C
J
T = 125°C
J
1.2
1.0
0.8
0.6
T = 85°C
0.1
J
0.01
−75 −50 −25
0
25 50 75 100 125 150 175 200
5
10
15
20
25
30
35
40
T , JUNCTION TEMPERATURE (°C)
J
V
, DRAIN−TO−SOURCE VOLTAGE (V)
DS
Figure 5. On−Resistance Variation with
Figure 6. Drain−to−Source Leakage Current
Temperature
vs. Voltage
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3
FDD86067−F085
TYPICAL CHARACTERISTICS
10
10K
1K
Q
G(TOT)
C
9
8
7
6
5
4
3
2
1
0
iss
C
oss
Q
Q
GS
GD
100
C
rss
10
1
V
DS
= 32 V
V
= 0 V
GS
I
D
= 50 A
f = 1 MHz
T = 25°C
J
0.1
1
10
100
0
6
12
18
24
30
36
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q , TOTAL GATE CHARGE (nC)
G
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source Voltage vs. Total
Gate Charge
1000
100
V
GS
= 0 V
V
= 10 V
= 50 V
= 38 A
GS
100
10
1
V
DS
I
t
d(off)
t
r
D
t
d(on)
t
f
0.1
10
1
T = 175°C
J
0.01
T = 25°C
T = −55°C
J
J
0.001
1
10
R , GATE RESISTANCE (W)
100
0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
G
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
1000
100
10
100
T
= 25°C
C
Single Pulse
≤ 10 V
V
GS
T
= 25°C
10 ms
J(initial)
10
T
= 150°C
J(initial)
0.5 ms
1 ms
1
R
Limit
DS(on)
Thermal Limit
Package Limit
10 ms
1
0.1
0.1
1
10
100
1000
0.00001
0.0001
t , TIME IN AVALANCHE (s)
AV
0.001
0.01
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. Forward Biased Safe Operating
Area
Figure 12. Avalanche Characteristics
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4
FDD86067−F085
TYPICAL CHARACTERISTICS
100
50% Duty Cycle
20%
10%
5%
2%
1%
10
1
0.1
0.01
Single Pulse
0.001
0.000001 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (s)
Figure 13. Thermal Response
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5
FDD86067−F085
PACKAGE DIMENSIONS
DPAK3 (TO−252 3 LD)
CASE 369AS
ISSUE O
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6
FDD86067−F085
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Email Requests to: orderlit@onsemi.com
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