FDD86252 [ONSEMI]
N 沟道屏蔽门极 PowerTrench® MOSFET 150 V，27 A，52 mΩ;
| 型号： | FDD86252 |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道屏蔽门极 PowerTrench® MOSFET 150 V，27 A，52 mΩ 开关 脉冲 晶体管 |
| 文件： | 总8页 (文件大小：571K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
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March 2015
FDD86252
N-Channel Shielded Gate PowerTrench® MOSFET
150 V, 27 A, 52 mΩ
Features
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced PowerTrench® process that
incorporates Shielded Gate technology. This process has been
optimized for the on-state resistance and yet maintain superior
switching performance.
Shielded Gate MOSFET Technology
Max rDS(on) = 52 mΩ at VGS = 10 V, ID = 5 A
Max rDS(on) = 72 mΩ at VGS = 6 V, ID = 4 A
100% UIL tested
Application
RoHS Compliant
DC - DC Conversion
D
D
G
S
G
D-PAK
(TO-252)
S
MOSFET Maximum Ratings TC = 25 °C unless otherwise noted
Symbol
VDS
VGS
Parameter
Ratings
Units
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Continuous
150
V
V
±20
TC = 25 °C
TA = 25 °C
27
ID
(Note 1a)
(Note 4)
(Note 3)
5
A
-Pulsed
30
EAS
Single Pulse Avalanche Energy
Power Dissipation
72
89
mJ
W
TC = 25 °C
TA = 25 °C
PD
Power Dissipation
(Note 1a)
3.1
TJ, TSTG
Operating and Storage Junction Temperature Range
-55 to +150
°C
Thermal Characteristics
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
1.4
40
°C/W
(Note 1a)
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
13 ’’
Tape Width
16 mm
Quantity
FDD86252
FDD86252
D-PAK(TO-252)
2500 units
©2012 Fairchild Semiconductor Corporation
FDD86252 Rev.1.6
1
www.fairchildsemi.com
Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250 μA, VGS = 0 V
150
V
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient
I
D = 250 μA, referenced to 25 °C
104
mV/°C
IDSS
IGSS
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
VDS = 120 V, VGS = 0 V
VGS = ±20 V, VDS = 0 V
1
μA
±100
nA
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250 μA
2.0
3.1
-10
4.0
V
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Temperature Coefficient
I
D = 250 μA, referenced to 25 °C
mV/°C
V
GS = 10 V, ID = 5 A
41
49
81
15
52
72
rDS(on)
gFS
Static Drain to Source On Resistance
Forward Transconductance
VGS = 6 V, ID = 4 A
mΩ
VGS = 10 V, ID = 5 A,TJ = 125 °C
VDS = 10 V, ID = 5 A
103
S
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
741
78
985
130
10
pF
pF
pF
Ω
VDS = 75 V, VGS = 0 V,
f = 1 MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
4.2
0.4
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
8.3
1.8
14
17
10
25
10
16
9
ns
ns
VDD = 75 V, ID = 5 A,
V
GS = 10 V, RGEN = 6 Ω
Turn-Off Delay Time
Fall Time
ns
3
ns
Qg
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
VGS = 0 V to 10 V
VGS = 0 V to 5 V
11.3
6.3
3.4
2.6
nC
nC
nC
nC
Qg
VDD = 75 V,
D = 5 A
I
Qgs
Qgd
Drain-Source Diode Characteristics
V
GS = 0 V, IS = 5 A
(Note 2)
(Note 2)
0.80
0.77
60
1.3
1.2
97
V
VSD
Source-Drain Diode Forward Voltage
VGS = 0 V, IS = 2.6 A
trr
Reverse Recovery Time
ns
IF = 5 A, di/dt = 100 A/μs
Qrr
Reverse Recovery Charge
72
115
nC
Notes:
1:
R
R
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
θJA
θJC
is guaranteed by design while R
is determined by the user’s board design.
θJA
b) 96 °C/W when mounted on
a minimum pad
a) 40 °C/W when mounted on a
1 in pad of 2 oz copper
2
2: Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3: Starting T = 25 °C, L = 1 mH, I = 12 A, V = 135 V, V = 10 V.
J
AS
DD
GS
4: Pulsed Drain current is tested at 300 μs with 2% duty cycle. For repetitive pulses, the pulse width is limited by the maximum junction temperature.
©2012 Fairchild Semiconductor Corporation
FDD86252 Rev.1.6
2
www.fairchildsemi.com
Typical Characteristics TJ = 25 °C unless otherwise noted
4
3
2
1
0
30
VGS = 6 V
VGS = 10 V
VGS = 5 V
25
20
15
10
5
VGS = 5.5 V
VGS = 6.5 V
VGS = 5.5 V
VGS = 6 V
VGS = 5 V
VGS = 6.5 V VGS = 10 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
0
0
5
10
15
20
25
30
0
1
2
3
4
5
ID, DRAIN CURRENT (A)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics
Figure2. N o r m a l i z e d O n - R e s i s ta n c e
vs Drain Current and Gate Voltage
2.4
250
ID = 5 A
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
ID = 5 A
VGS = 10 V
200
150
100
50
TJ = 125 o
C
TJ = 25 o
C
0
-75 -50 -25
0
25 50 75 100 125 150
4
5
6
7
8
9
10
TJ, JUNCTION TEMPERATURE (oC)
VGS, GATE TO SOURCE VOLTAGE (V)
F i gu re 3 . N orma li zed On - Res is ta nc e
vs Junction Temperature
Figure4. On-Resistance vs Gate to
Source Voltage
30
30
PULSE DURATION = 80 μs
VGS = 0 V
DUTY CYCLE = 0.5% MAX
25
10
VDS = 5 V
TJ = 150 o
C
20
1
15
TJ = 25 oC
TJ = 150 o
C
0.1
10
5
TJ = 25 o
C
TJ = -55 o
C
0.01
0.001
TJ = -55 o
C
0
2
3
4
5
6
7
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure6. Source to Drain Diode
Forward Voltage vs Source Current
©2012 Fairchild Semiconductor Corporation
FDD86252 Rev.1.6
3
www.fairchildsemi.com
Typical Characteristics TJ = 25 °C unless otherwise noted
10
1000
100
10
ID = 5 A
Ciss
VDD = 50 V
8
VDD = 75 V
6
Coss
VDD = 100 V
4
2
0
Crss
f = 1 MHz
= 0 V
V
GS
1
0.1
1
10
100
0
3
6
9
12
VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics
Figure8. C a p a c i t a n c e v s D r a i n
to Source Voltage
30
25
20
15
10
5
50
VGS = 10 V
TJ = 25 o
C
10
VGS = 6 V
TJ = 100 oC
TJ = 125 o
C
R
θJC = 1.4 oC/W
0
25
1
0.001
0.01
0.1
1
10
50
75
100
125
150
TC, CASE TEMPERATURE (oC)
tAV, TIME IN AVALANCHE (ms)
Figure9. U n c l a m p e d I n d u c t i v e
Switching Capability
Figure10. Maximum Continuous Drain
Current vs Case Temperature
5000
50
10
SINGLE PULSE
RθJC = 1.4 oC/W
C = 25 oC
T
100 μs
1000
THIS AREA IS
LIMITED BY r
DS(on)
SINGLE PULSE
TJ = MAX RATED
1
RθJC = 1.4 oC/W
1 ms
T
C = 25 oC
100
50
10 ms
DC
0.1
0.05
10-5
10-4
10-3
10-2
10-1
1
1
10
100
400
t, PULSE WIDTH (sec)
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure11. Forward BiasSafe
Operating Area
Figure12. Single Pulse Maximum
Power Dissipation
©2012 Fairchild Semiconductor Corporation
FDD86252 Rev.1.6
4
www.fairchildsemi.com
Typical Characteristics TJ = 25 °C unless otherwise noted
2
DUTY CYCLE-DESCENDING ORDER
1
D = 0.5
0.2
P
DM
0.1
0.05
0.02
0.01
0.1
t
1
t
2
NOTES:
DUTY FACTOR: D = t /t
SINGLE PULSE
θJC = 1.4 oC/W
1
2
R
PEAK T = P
x Z
x R + T
J
DM
θJC θJc C
0.01
10-5
10-4
10-3
10-2
10-1
1
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Junction-to-Case Transient Thermal Response Curve
©2012 Fairchild Semiconductor Corporation
FDD86252 Rev.1.6
5
www.fairchildsemi.com
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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