FDD8647L [ONSEMI]
N 沟道，PowerTrench® MOSFET，40V，42A，9mΩ;
| 型号： | FDD8647L |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道，PowerTrench® MOSFET，40V，42A，9mΩ 开关 脉冲 晶体管 |
| 文件： | 总8页 (文件大小：474K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
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March 2015
FDD8647L
N-Channel PowerTrench® MOSFET
40 V, 42 A, 9 mΩ
Features
General Description
This N-Channel MOSFET has been produced using Fairchild
Semiconductor’s proprietary PowerTrench® technology to
deliver low rDS(on) and optimized BVDSS capability to offer
superior performance benefit in the application.
Max rDS(on) = 9 mΩ at VGS = 10 V, ID = 13 A
Max rDS(on) = 13 mΩ at VGS = 4.5 V, ID = 11 A
Fast Switching
100% UIL tested
Applications
RoHS Compliant
Inverter
Power Supplies
D
D
G
G
S
D-PAK
(TO-252)
S
MOSFET Maximum Ratings TC = 25 °C unless otherwise noted
Symbol
VDS
VGS
Parameter
Ratings
Units
Drain to Source Voltage
Gate to Source Voltage
40
V
V
±20
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
TC = 25 °C
C = 25 °C
42
T
52
ID
A
TA = 25 °C
(Note 1a)
(Note 3)
(Note 1a)
14
100
-Pulsed
EAS
Single Pulse Avalanche Energy
Power Dissipation
33
mJ
W
TC = 25 °C
TA = 25 °C
43
PD
Power Dissipation
3.1
TJ, TSTG
Operating and Storage Junction Temperature Range
-55 to +150
°C
Thermal Characteristics
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
2.9
40
°C/W
(Note 1a)
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
13 ’’
Tape Width
16 mm
Quantity
FDD8647L
FDD8647L
D-PAK (TO-252)
2500 units
©2008 Fairchild Semiconductor Corporation
FDD8647L Rev. 1.2
www.fairchildsemi.com
1
Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250 µA, VGS = 0 V
40
V
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
I
D = 250 µA, referenced to 25 °C
31
mV/°C
IDSS
IGSS
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
VDS = 32 V, VGS = 0 V
VGS = ±20 V, VDS = 0 V
1
µA
±100
nA
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250 µA
1.0
2.0
-6
3.0
V
∆VGS(th)
∆TJ
Gate to Source Threshold Voltage
Temperature Coefficient
I
D = 250 µA, referenced to 25 °C
GS = 10 V, ID = 13 A
mV/°C
V
7.1
9.9
10.7
49
9.0
rDS(on)
gFS
Static Drain to Source On Resistance
Forward Transconductance
VGS = 4.5 V, ID = 11 A
13.0
13.6
mΩ
VGS = 10 V, ID = 13 A, TJ = 125 °C
VDS = 5 V, ID = 13 A
S
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
1230
340
55
1640
455
80
pF
pF
pF
Ω
VDS = 20 V, VGS = 0 V,
f = 1 MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
0.9
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
8
3
16
10
34
10
28
14
ns
ns
VDD = 20 V, ID = 13 A,
VGS = 10 V, RGEN = 6 Ω
Turn-Off Delay Time
Fall Time
19
2
ns
ns
Qg
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
VGS = 0 V to 10 V
20
10
3.8
3.1
nC
nC
nC
nC
Qg
VGS = 0 V to 4.5 V
VDD = 20 V,
D = 13 A
I
Qgs
Qgd
Drain-Source Diode Characteristics
VGS = 0 V, IS = 2.6 A
VGS = 0 V, IS = 13 A
(Note 2)
(Note 2)
0.75
0.84
28
1.2
1.3
45
VSD
Source to Drain Diode Forward Voltage
V
trr
Reverse Recovery Time
ns
IF = 13 A, di/dt = 100 A/µs
Qrr
Reverse Recovery Charge
15
27
nC
Notes:
1:
R
R
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
θJA
θJC
is guaranteed by design while R
is determined by the user’s board design.
θJA
a)
40 °C/W when mounted on a
1 in pad of 2 oz copper
b) 96 °C/W when mounted on
a minimum pad
2
2: Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0%.
3: Starting T = 25 °C, L = 0.3 mH, I = 15.0 A, V = 36 V, V = 10.0 V.
J
AS
DD
GS
©2008 Fairchild Semiconductor Corporation
FDD8647L Rev. 1.2
www.fairchildsemi.com
2
Typical Characteristics TJ = 25 °C unless otherwise noted
100
3.5
3.0
2.5
2.0
1.5
1.0
0.5
VGS = 5 V
VGS = 10 V
VGS = 3.5 V
VGS = 4 V
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
VGS = 4.5 V
80
60
40
20
0
VGS = 4.5 V
VGS = 4 V
PULSE DURATION = 80
µ
s
DUTY CYCLE = 0.5% MAX
VGS = 5 V
VGS = 3.5 V
VGS = 10 V
0.0
0.5
VDS
1.0
1.5
2.0
2.5
0
20
40
60
80
100
,
DRAIN TO SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
Figure 1. On Region Characteristics
Figure2. N o r m a l i z e d O n - R e s i s ta n c e
vs Drain Current and Gate Voltage
40
1.8
ID = 13 A
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
µs
ID = 13 A
VGS = 10 V
1.6
1.4
1.2
1.0
0.8
0.6
30
20
10
0
TJ = 125 o
C
TJ = 25 o
C
2
4
6
8
10
-75 -50 -25
TJ
0
25 50 75 100 125 150
,
JUNCTION TEMPERATURE ( )
oC
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On Resistance
vs Junction Temperature
Figure4. On-Resistance vs Gate to
Source Voltage
100
100
80
60
40
20
0
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
VGS = 0 V
10
1
VDS = 5 V
TJ = 150 o
C
TJ = 25 oC
0.1
TJ = 150 o
C
TJ = -55 o
C
0.01
TJ = 25 o
C
TJ = -55 o
C
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1
2
3
4
5
VSD, BODY DIODE FORWARD VOLTAGE (V)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure6. Source to Drain Diode
Forward Voltage vs Source Current
©2008 Fairchild Semiconductor Corporation
FDD8647L Rev. 1.2
www.fairchildsemi.com
3
Typical Characteristics TJ = 25 °C unless otherwise noted
10
3000
1000
ID = 13 A
8
Ciss
VDD = 20 V
6
Coss
VDD = 15 V
VDD = 25 V
100
10
4
2
0
Crss
f = 1 MHz
= 0 V
V
GS
0.1
1
10
40
150
1
0
5
10
Qg, GATE CHARGE (nC)
15
20
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics
Figure8. C a p a c i t a n c e v s D r a i n
to Source Voltage
100
60
50
40
30
20
10
0
42
10
VGS = 10 V
TJ = 25 oC
Limited by Package
RθJC = 2.9 oC/W
TJ = 125 o
C
VGS = 4.5 V
1
0.001
0.01
0.1
1
10
100
25
50
75
100
125
oC
tAV, TIME IN AVALANCHE (ms)
TC,
CASE TEMPERATURE ( )
Figure9. U n c l a m p e d I n d u c t i v e
Switching Capability
Figure10. Maximum Continuous Drain
Current vs Case Temperature
105
200
100
VGS = 10 V
104
103
102
10
10
1
100 us
SINGLE PULSE
RθJC = 2.9 oC/W
THIS AREA IS
LIMITED BY rDS(on)
TC = 25 oC
1 ms
SINGLE PULSE
TJ = MAX RATED
RθJC = 2.9 oC/W
10 ms
100 ms
DC
T
C = 25 oC
0.1
0.1
10-6
10-5
10-4
t, PULSE WIDTH (sec)
10-3
10-2
10-1
1
10
100
200
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe
Operating Area
Figure12. Single Pulse Maximum
Power Dissipation
©2008 Fairchild Semiconductor Corporation
FDD8647L Rev. 1.2
www.fairchildsemi.com
4
Typical Characteristics TJ = 25 °C unless otherwise noted
2
1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
P
0.1
0.1
0.01
DM
0.05
0.02
0.01
t
1
t
2
NOTES:
DUTY FACTOR: D = t /t
1
2
SINGLE PULSE
RθJC = 2.9 oC/W
PEAK T = P
J
x Z
x R + T
C
DM
θJC
θJc
0.001
10-6
10-5
10-4
10-3
10-2
10-1
1
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Junction-to-Case Transient Thermal Response Curve
2
1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
0.1
0.01
P
DM
t
1
t
2
NOTES:
DUTY FACTOR: D = t /t
SINGLE PULSE
RθJA = 96 oC/W
1
2
PEAK T = P
J
x Z
x R
+ T
DM
θJA
θJA A
(
Note 1b
)
0.001
10-4
10-3
10-2
10-1
t, RECTANGULAR PULSE DURATION (sec)
1
10
100
1000
Figure 14. Junction-to-Ambient Transient Thermal Response Curve
©2008 Fairchild Semiconductor Corporation
FDD8647L Rev. 1.2
www.fairchildsemi.com
5
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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