FDD8782 [ONSEMI]
N 沟道，PowerTrench® MOSFET，25V，35A，11mΩ;
| 型号： | FDD8782 |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道，PowerTrench® MOSFET，25V，35A，11mΩ 局域网 开关 脉冲 晶体管 |
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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
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March 2015
FDD8782/FDU8782
N-Channel PowerTrench® MOSFET
25V, 35A, 11mΩ
General Description
Features
Max rDS(on) =11.0mΩ at VGS = 10V, ID = 35A
Max rDS(on) =14.0mΩ at VGS = 4.5V, ID = 35A
Low gate charge: Qg(10) = 18nC(Typ), VGS = 10V
Low gate resistance
This N-Channel MOSFET has been designed specifically
to improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
rDS(on) and fast switching speed.
Avalanche rated and 100% tested
RoHS Compliant
Application
Vcore DC-DC for Desktop Computers and Servers
VRM for Intermediate Bus Architecture
D
G
D
G
S
I-PAK
G
D S
Short Lead I-PAK
(TO-251AA)
S
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDS
VGS
Parameter
Ratings
Units
Drain to Source Voltage
Gate to Source Voltage
25
±20
V
V
Drain Current -Continuous (Package Limited)
-Continuous (Die Limited)
-Pulsed
35
ID
54
A
(Note 1)
(Note 2)
321
EAS
Single Pulse Avalanche Energy
Power Dissipation
72
mJ
W
PD
50
TJ, TSTG
Operating and Storage Temperature
-55 to 175
°C
Thermal Characteristics
RθJC
RθJA
RθJA
Thermal Resistance, Junction to Case TO-252,TO-251
Thermal Resistance, Junction to Ambient TO-252,TO-251
Thermal Resistance, Junction to Ambient TO-252,1in2 copper pad area
3.0
100
52
°C/W
°C/W
°C/W
Package Marking and Ordering Information
Device Marking
FDD8782
Device
FDD8782
Package
TO-252AA
TO-251AA
TO-251AA
Reel Size
13’’
Tape Width
16mm
N/A
Quantity
2500 units
75 units
FDU8782
FDU8782
N/A(Tube)
N/A(Tube)
FDU8782
FDU8782_F071
N/A
75 units
©2009 Fairchild Semiconductor Corporation
FDD8782/FDU8782 Rev. 1.2
1
www.fairchildsemi.com
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250μA, VGS = 0V
25
V
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient
ID = 250μA, referenced to
25°C
14.3
mV/°C
1
VDS = 20V,
VGS = 0V
IDSS
IGSS
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
μA
TJ = 150°C
250
±100
VGS = ±20V
nA
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250μA
1.2
1.7
2.5
V
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = 250μA, referenced to
25°C
-6.5
mV/°C
VGS = 10V, ID = 35A
VGS = 4.5V, ID = 35A
8.5
11.0
14.0
11.0
rDS(on)
Drain to Source On Resistance
mΩ
VGS = 10V, ID = 35A
TJ = 175°C
12.1
18.0
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
920
230
160
1.4
1220
310
pF
pF
pF
Ω
VDS = 13V, VGS = 0V,
f = 1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
240
f = 1MHz
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
7
14
18
36
25
25
13
ns
ns
VDD = 13V, ID = 35A
VGS = 10V, RGS = 9Ω
9
Turn-Off Delay Time
Fall Time
22
14
18
9.4
3.1
4.0
ns
ns
Qg
Total Gate Charge
Total Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller”Charge
VGS = 0V to 10V
nC
nC
nC
nC
VDD = 13V
Qg
VGS = 0V to 5V
I
D = 35A
Qgs
Qgd
Ig = 1.0mA
Drain-Source Diode Characteristics
VGS = 0V, IS = 35A
0.96
0.86
25
1.25
1.2
38
VSD
Source to Drain Diode Forward Voltage
V
VGS = 0V, IS = 15A
trr
Reverse Recovery Time
IF = 35A, di/dt = 100A/μs
IF = 35A, di/dt = 100A/μs
ns
Qrr
Reverse Recovery Charge
17
26
nC
Notes:
1: Pulse time < 300us,Duty cycle = 2%.
o
2: Starting T = 25 C, L = 1.0mH, I = 12A ,V = 23V, V = 10V.
J
AS
DD
GS
FDD8782/FDU8782 Rev. 1.2
2
www.fairchildsemi.com
Typical Characteristics TJ = 25°C unless otherwise noted
70
60
50
40
30
20
10
0
7
6
5
4
3
2
1
0
PULSE DURATION = 80
DUTY CYCLE = 0.5%MAX
μs
VGS = 10V
VGS = 4.5V
PULSE DURATION = 80μs
DUTY CYCLE = 0.5%MAX
VGS = 3V
VGS = 3.5V
VGS = 3.5V
VGS = 4.5V
VGS = 10V
VGS = 3V
0
1
2
3
4
0
10
20
30
40
50
60
70
VDS, DRAIN TO SOURCE VOLTAGE (V)
ID, DRAIN CURRENT(A)
Figure 1. On Region Characteristics
Figure 2. Normalized On-Resistance vs Drain
Current and Gate Voltage
1.8
40
ID = 35A
PULSE DURATION = 80μs
DUTY CYCLE = 0.5%MAX
ID = 15A
VGS = 10V
1.6
1.4
1.2
1.0
0.8
0.6
30
20
10
0
TJ= 175oC
TJ = 25oC
-80
-40
0
40
80
120
160
)
200
2
4
6
8
10
TJ, JUNCTION TEMPERATURE
(
oC
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On Resistance vs Junction
Temperature
Figure 4. On-Resistance vs Gate to Source
Voltage
70
100
VGS = 0V
PULSE DURATION = 80
μs
60
50
40
30
20
10
0
DUTY CYCLE = 0.5%MAX
10
TJ = 175oC
1
TJ = 175oC
TJ = 25oC
0.1
TJ = 25oC
TJ = -55oC
TJ = -55oC
0.01
1E-3
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode Forward
Voltage vs Source Current
FDD8782/FDU8782 Rev. 1.2
3
www.fairchildsemi.com
Typical Characteristics TJ = 25°C unless otherwise noted
3000
10
8
f = 1MHz
VGS = 0V
VDD = 8V
1000
VDD = 13V
6
Ciss
Coss
VDD = 18V
4
Crss
2
100
0
30
0.1
1
10
0
5
10
15
20
25
VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE(nC)
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs Drain to Source Voltage
60
50
50
VGS = 10V
TJ = 25oC
40
30
TJ = 125oC
10
VGS = 4.5V
20
10
RθJC = 3.0oC/W
TJ = 150oC
1
0.001
0
25
0.01
0.1
1
10
100
50
75
100
125
150
175
tAV, TIME IN AVALANCHE(ms)
TC, CASE TEMPERATURE(oC)
Figure 9. Unclamped Inductive Switching
Capability
Figure 10. Maximum Continuous Drain Current vs
Case Temperature
7000
500
o
T
= 25 C
C
10us
VGS = 10V
FOR TEMPERATURES
100
o
ABOVE 25 C DERATE PEAK
1000
100
10
CURRENT AS FOLLOWS:
100us
175 – T
C
I = I
----------------------
25
10
150
LIMITED BY
PACKAGE
1ms
1
SINGLE PULSE
10ms
DC
SINGLE PULSE
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(on)
T
J
= MAX RATED
o
T
C
= 25 C
0.1
10-5
10-4
10-3
t, PULSE WIDTH (s)
10-2
10-1
100
101
1
10
50
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe Operating Area
Figure 12. Single Pulse Maximum Power
Dissipation
FDD8782/FDU8782 Rev. 1.2
4
www.fairchildsemi.com
Typical Characteristics TJ = 25°C unless otherwise noted
2
DUTY CYCLE-DESCENDING ORDER
1
D = 0.5
0.2
0.1
P
0.05
0.1
DM
0.02
0.01
t
1
t
2
0.01
NOTES:
DUTY FACTOR: D = t /t
SINGLE PULSE
1
2
PEAK T = P
x Z
x R
+ T
J
DM
θJC
θJC C
1E-3
10-5
10-4
10-3
10-2
10-1
100
101
t, RECTANGULAR PULSE DURATION(s)
Figure 13. Transient Thermal Response Curve
FDD8782/FDU8782 Rev. 1.2
5
www.fairchildsemi.com
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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