FDFMA2P029Z-F106 [ONSEMI]
集成式 P 沟道，Power Trench® MOSFET 和肖特基二极管，-20V，3.1A，95mΩ;
| 型号： | FDFMA2P029Z-F106 |
| 厂家： | 
ONSEMI |
| 描述： | 集成式 P 沟道，Power Trench® MOSFET 和肖特基二极管，-20V，3.1A，95mΩ 开关 光电二极管 晶体管 肖特基二极管 |
| 文件： | 总8页 (文件大小：254K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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MOSFET
MOSFET – P-Channel,
POWERTRENCH) Integrated
with Schottky Diode
V
MAX
r
MAX
I MAX
D
DS
DS(on)
−20 V
95 mW @ −4.5 V
141 mW @ −2.5 V
−3.1 A
-20 V, -3.1 A, 95 mW
SCHOTTKY DIODE
V
RRM
MAX
V MAX
F
I MAX
O
FDFMA2P029Z,
FDFMA2P029Z-F106
20 V
0.37 V @ 500 mA
2 A
Pin 1
C
A
General Description
NC
D
This device is designed specifically as a single package solution for
the battery charge switch in cellular handset and other ultra−portable
applications. It features a MOSFET with very low on−state resistance
and an independently connected low forward voltage schottky diode
allows for minimum conduction losses.
The MicroFETt 2X2 package offers exceptional thermal
performance for its physical size and is well suited to linear mode
applications.
D
C
G
S
WDFN6 2x2, 0.65P
MicroFET
CASE 511DA
Features
MOSFET
MARKING DIAGRAM
• Max r
• Max r
= 95 mW at V = –4.5 V, I = –3.1 A
GS D
DS(on)
&Z&2&K
P29
= 141 mW at V = –2.5 V, I = –2.5 A
DS(on)
GS
D
• HBM ESD Protection Level > 2.5 kV (Note 1)
Schottky
• V < 0.37 V @ 500 mA
F
&Z = Assembly Plant Code
&2 = 2−Digit Date Code
&K = 2−Digits Lot Run Traceability Code
P29 = Device Code
• Low Profile − 0.8 mm Maximum − In the New Package MicroFET
2x2 mm
• These Devices are Pb−Free and are RoHS Compliant
NOTE:
PIN CONNECTIONS
1. The diode connected between the gate and source serves only
protection against ESD. No gate overvoltage rating is implied.
A
NC
D
1
2
3
6
5
4
C
G
S
ORDERING INFORMATION
See detailed ordering and shipping information on page 6 of
this data sheet.
© Semiconductor Components Industries, LLC, 2008
1
Publication Order Number:
February, 2022 − Rev. 3
FDFMA2P029Z/D
FDFMA2P029Z, FDFMA2P029Z−F106
MOSFET MAXIMUM RATINGS (T = 25°C unless otherwise noted)
A
Symbol
Parameter
Ratings
Unit
V
V
DS
V
GS
Drain to Source Voltage
Gate to Source Voltage
Drain Current
–20
12
V
I
D
Continuous (Note 2a)
–3.1
A
Pulsed
−6
P
D
Power Dissipation
(Note 2a)
(Note 2b)
1.4
W
0.7
T , T
Operating and Storage Junction Temperature Range
Schottky Repetitive Peak Reverse Voltage
Schottky Average Forward Current
–55 to +150
°C
V
J
STG
V
RRM
20
2
I
O
A
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Symbol
Parameter
Thermal Resistance, Junction to Ambient (Note 2a)
Thermal Resistance, Junction to Ambient (Note 2b)
Thermal Resistance, Junction to Ambient (Note 2c)
Ratings
86
Unit
°C/W
R
q
JA
R
173
q
JA
R
86
q
JA
R
Thermal Resistance, Junction to Ambient (Note 2d)
140
q
JA
2
2. R
is determined with the device mounted on a 1 in oz. copper pad on a 1.5 x 1.5 in. board of FR−4 material. R
is guaranteed by design
q
q
JC
JA
while R
is determined by the user’s board design.
q
JA
2
a. MOSFET R
b. MOSFET R
c. Schottky R
= 86°C/W when mounted on a 1 in pad of 2 oz copper, 1.5” x 1.5” x 0.062” thick PCB.
q
JA
= 173°C/W when mounted on a minimum pad of 2 oz copper.
q
JA
2
= 86°C/W when mounted on a 1 in pad of 2 oz copper, 1.5” x 1.5” x 0.062” thick PCB.
= 140°C/W when mounted on a minimum pad of 2 oz copper.
q
q
JA
JA
d. Schottky R
b. 173°C/W when
mounted on a
minimumpad of
2 oz copper.
a. 86°C/W when
c. 86°C/W when
d. 140°C/W when
mounted on a
minimum pad
of 2 oz copper.
mounted on a
mounted on a
2
2
1 in pad of 2
1 in pad of 2
oz copper.
oz copper.
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2
FDFMA2P029Z, FDFMA2P029Z−F106
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
BV
Drain to Source Breakdown Voltage
I
I
= –250 mA, V = 0 V
–20
−
−
−
V
DSS
D
GS
Breakdown Voltage Temperature
Coefficient
= –250 mA, referenced to 25°C
−
–12
mV/°C
DBVDSS
DTJ
D
I
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
V
V
= –16 V, V = 0 V
−
−
−
−
–1
10
mA
mA
DSS
GSS
DS
GS
I
= 12 V, V = 0 V
DS
GS
ON CHARACTERISTICS
V
Gate to Source Threshold Voltage
V
I
= V , I = –250 mA
–0.6
–1.0
4
–1.5
V
GS(th)
GS
DS
D
Gate to Source Threshold Voltage
Temperature Coefficient
= –250 mA, referenced to 25°C
−
−
mV/°C
DVGS(th)
DTJ
D
r
Static Drain to Source On−Resistance
V
GS
V
GS
V
GS
V
DS
= –4.5 V, I = –3.1 A
−
−
−
−
60
88
95
141
140
−
mW
DS(on)
D
= –2.5 V, I = –2.5 A
D
= –4.5 V, I = –3.1 A, T = 125°C
87
D
J
g
FS
Forward Transconductance
= –10 V, I = –3.1 A
–11
S
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
DS
= –10 V, V = 0 V, f = 1 MHz
−
−
−
540
120
100
720
160
150
pF
pF
pF
iss
GS
C
Output Capacitance
oss
C
Reverse Transfer Capacitance
rss
SWITCHING CHARACTERISTICS
t
Turn−On Delay Time
Rise Time
V
V
= –10 V, I = –1 A
−
−
−
−
−
−
−
13
11
37
36
7
24
20
59
58
10
−
ns
ns
d(on)
DD
GS
D
= –4.5 V, R
= 6 W
GEN
t
r
t
Turn−Off Delay Time
Fall Time
ns
d(off)
t
f
ns
Q
Total Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
V
DD
V
GS
= –10 V, I = –3.1 A
nC
nC
nC
g(TOT)
D
= –4.5 V
Q
Q
1.1
2.4
gs
−
gd
DRAIN−SOURCE DIODE CHARACTERISTICS
Maximum Continuous Drain−Source Diode Forward Current
I
S
−
−
−
−
−
–0.8
25
9
–1.1
–1.2
−
A
V
V
Source to Drain Diode Forward Voltage
Reverse Recovery Time
V
= 0 V, I = –1.1 A (Note 3)
SD
GS S
t
I = –3.1 A, di/dt = 100 A/ms
F
ns
nC
rr
Q
Reverse Recovery Charge
−
rr
SCHOTTKY DIODE CHARACTERISTICS
V
I
Reverse Voltage
Reverse Leakage
I
= 1 mA
= 20 V
T = 25°C
20
−
−
−
V
mA
mA
V
R
R
J
V
T = 25°C
J
30
300
45
R
R
T = 125°C
J
−
10
V
Forward Voltage
I = 500 mA
F
T = 25°C
J
−
0.32
0.21
0.37
0.28
0.37
0.26
0.435
0.33
F
T = 125°C
J
−
I = 1 A
F
T = 25°C
J
−
T = 125°C
J
−
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
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FDFMA2P029Z, FDFMA2P029Z−F106
TYPICAL CHARACTERISTICS
(T = 25°C unless otherwise noted)
J
2.6
6
5
4
3
2
1
0
PULSE DURATION = 300 ms
DUTY CYCLE = 2.0% MAX
V
GS
= −2.0 V
2.2
1.8
1.4
1.0
0.6
V
= −2.0 V
= −1.5 V
GS
V
V
V
= −4.5 V
= −3.0 V
= −2.5 V
V
GS
= −3.5 V
GS
V
V
= −2.5 V
= −3.0 V
GS
GS
GS
GS
V
GS
PULSE DURATION = 300 ms
DUTY CYCLE = 2.0% MAX
V
GS
= −4.5 V
0.0
0.5
1.0
1.5
2.0
0
1
2
3
4
5
6
−V , DRAIN TO SOURCE VOLTAGE (V)
DS
−I , DRAIN CURRENT (A)
D
Figure 1. On Region Characteristics
Figure 2. Normalized On−Resistance vs. Drain
Current and Gate Voltage
1.6
1.4
1.2
1.0
0.8
0.6
200
PULSE DURATION = 300 ms
DUTY CYCLE = 2.0% MAX
I
V
= −3.1 A
D
= −4.5 V
GS
160
I
D
= −1.55 A
120
80
T = 125°C
J
T = 25°C
J
40
−50 −25
0
25
50
75 100 125 150
0
2
4
6
8
10
T , JUNCTION TEMPERATURE (°C)
J
−V , GATE TO SOURCE VOLTAGE (V)
GS
Figure 3. Normalized On−Resistance vs.
Figure 4. On−Resistance vs. Gate to Source
Junction Temperature
Voltage
6
5
4
3
2
1
0
10
PULSE DURATION = 300 ms
DUTY CYCLE = 2.0% MAX
V
= 0 V
GS
1
0.1
V
DD
= −5 V
T = 125°C
J
T = 25°C
J
T = 125°C
J
0.01
0.001
T = −55°C
J
T = −55°C
J
T = 25°C
J
0.0001
0.0
0.5
1.0
1.5
2.0
2.5
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
−V , GATE TO SOURCE VOLTAGE (V)
GS
−V , BODY DIODE FORWARD VOLTAGE (V)
SD
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode Forward Voltage
vs. Source Current
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4
FDFMA2P029Z, FDFMA2P029Z−F106
TYPICAL CHARACTERISTICS
(T = 25°C unless otherwise noted) (continued)
J
1000
10
8
I
= −3.1 A
DD
C
iss
V
DD
= −5 V
V
DD
= −15 V
6
V
DD
= −10 V
C
oss
4
100
50
C
2
rss
f = 1 MHz
= 0 V
V
GS
0
0
2
4
6
8
10
12
14
0.1
1
10
20
103
30
Q , GATE CHARGE (nC)
g
−V , DRAIN TO SOURCE VOLTAGE (V)
DS
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance Characteristics
50
20
10
SINGLE PULSE
= 173°C/W
T = 25°C
r
LIMIT
DS(on)
R
q
JA
40
30
20
10
0
100 ms
A
1 ms
1
0.1
10 ms
100 ms
V
= −4.5 V
1 s
GS
10 s
SINGLE PULSE
SINGLE PULSE
= 173°C/W
DC
R
q
JA
T = 25°C
A
0.01
0.1
1
10
60
10−4 10−3 10−2 10−1 100
t, PULSE WIDTH (s)
101
102
−V , DRAIN TO SOURCE VOLTAGE (V)
DS
Figure 9. Forward Bias Safe Operating Area
Figure 10. Single Pulse Maximum Power
Dissipation
10
100
T = 125°C
J
10
1
T = 125°C
J
1
0.1
T = 85°C
J
T = 85°C
J
0.1
T = 25°C
J
0.01
0.001
T = 25°C
J
0.01
0.001
0
200
400
600
800
0
5
10
15
20
25
V , FORWARD VOLTAGE (mV)
F
V , REVERSE VOLTAGE (V)
R
Figure 11. Schottky Diode Forward Voltage
Figure 12. Schottky Diode Reverse Current
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FDFMA2P029Z, FDFMA2P029Z−F106
TYPICAL CHARACTERISTICS
(T = 25°C unless otherwise noted) (continued)
J
2
1
DUTY CYCLE−DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
0.1
t1
t2
NOTES:
DUTY FACTOR: D = t / t
SINGLE PULSE
10−3
1
2
0.01
PEAK T = P
x Z
x R
+ T
JA A
q
q
J
DM
JA
0.005
10−4
10−2
10−1
100
101
102
103
t, RECTANGULAR PULSE DURATION (s)
Figure 13. Transient Thermal Response Curve
PACKAGE MARKING AND ORDERING INFORMATION
†
Device
Device Marking
Package Type
Reel Size
Tape Width
Shipping
FDFMA2P029Z
P29
WDFN6 2x2, 0.65P
MicroFET
7”
8 mm
3000 / Tape & Reel
(Pb−Free)
FDFMA2P029Z−F106
P29
WDFN6 2x2, 0.65P
MicroFET
7”
8 mm
3000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
POWERTRENCH is registered trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United
States and/or other countries.
MicroFET is trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other
countries.
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6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
WDFN6 2x2, 0.65P
CASE 511DA
ISSUE O
DATE 31 JUL 2016
0.05
C
2.0
A
2X
B
1.80
1.72
2.0
0.80(2X)
1.00(2X)
0.21
1.41
0.05
C
2.25
TOP VIEW
2X
0.42(6X)
PIN#1 IDENT
0.42(6X)
(0.10)
0.65
0.75 0.05
RECOMMENDED
LAND PATTERN
0.10
C
0.20 0.05
C
0.08
C
0.025 0.025
SEATING
PLANE
SIDE VIEW
NOTES:
A. CONFORM TO JADEC REGISTRATIONS MO−229,
VARIATION VCCC, EXCEPT WHERE NOTED.
2.00 0.05
1.64 0.05
B. DIMENSIONS ARE IN MILLIMETERS.
0.645 0.05
0.350
C. DIMENSIONS AND TOLERANCES PER
ASME Y14.5M, 2009.
PIN#1 IDENT
(0.185)4X
D. LAND PATTERN RECOMMENDATION IS
EXISTING INDUSTRY LAND PATTERN.
1
3
0.275 0.05
(6X)
F. NON−JEDEC DUAL DAP
0.86 0.05
2.00 0.05
(0.57)
F
6
4
0.33 0.05
(6X)
0.65
0.10
0.05
C A B
1.30
C
BOTTOM VIEW
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Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13615G
WDFN6 2X2, 0.65P
PAGE 1 OF 1
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