FDFS2P106A [ONSEMI]
集成式 P 沟道,Power Trench® MOSFET 和肖特基二极管,-60V,-3.0 A,110mΩ;型号: | FDFS2P106A |
厂家: | ONSEMI |
描述: | 集成式 P 沟道,Power Trench® MOSFET 和肖特基二极管,-60V,-3.0 A,110mΩ PC 开关 脉冲 光电二极管 晶体管 肖特基二极管 |
文件: | 总7页 (文件大小:238K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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www.onsemi.com
onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi
product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without
notice. The information herein is provided “as-is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality,
or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all
liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,
regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
FDFS2P106A
Integrated 60V P-Channel PowerTrench MOSFET and Schottky Diode
Features
General Description
• –3.0 A, –60V RDS(ON) = 110 mΩ @ VGS = –10 V
The
performance of ON Semiconductor's PowerTrench
MOSFET technology with very low forward
FDFS2P106A
combines
the
exceptional
RDS(ON) = 140 mΩ @ VGS = –4.5 V
• V < 0.45 V @ 1 A (TJ = 125°C)
a
F
voltage drop Schottky barrier rectifier in an SO-8
package.
V < 0.53 V @ 1 A
F
V < 0.62 V @ 2 A
F
This device is designed specifically as a single package
solution for DC to DC converters. It features a fast
switching, low gate charge MOSFET with very low on-
• Schottky and MOSFET incorporated into single
power surface mount SO-8 package
state resistance.
The independently connected
Schottky diode allows its use in a variety of DC/DC
converter topologies.
• Electrically independent Schottky and MOSFET
pinout for design flexibility
D
D
1
2
3
4
8
7
6
5
A
A
S
C
C
D
D
C
C
G
SO-8
S
G
A
Pin 1
A
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
Parameter
MOSFET Drain-Source Voltage
MOSFET Gate-Source Voltage
Drain Current – Continuous
– Pulsed
Ratings
–60
Units
V
V
A
VGSS
±20
ID
(Note 1a)
–3
–10
2
PD
W
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
1.6
1
0.9
TJ, TSTG
VRRM
IO
Operating and Storage Junction Temperature Range
Schottky Repetitive Peak Reverse Voltage
°C
V
–55 to +150
45
Schottky Average Forward Current
(Note 1a)
1
A
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
2500 units
FDFS2P106A
FDFS2P106A
13’’
12mm
Publication Order Number:
FDFS2P106A/D
2001 Semiconductor Components Industries, LLC.
September-2017, Rev. 2
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage
–60
V
VGS = 0 V,
ID = –250 µA
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
–60
ID = –250 µA, Referenced to 25°C
mV/°C
IDSS
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
VDS = –48 V, VGS = 0 V
–1
µA
nA
nA
IGSSF
IGSSR
VGS = 20V,
VDS = 0 V
100
VGS = –20 V VDS = 0 V
–100
On Characteristics
(Note 2)
VGS(th)
Gate Threshold Voltage
–1
–1.6
4
–3
V
VDS = VGS
,
ID = –250 µA
∆VGS(th)
∆TJ
Gate Threshold Voltage
Temperature Coefficient
ID = –250 µA,Referenced to 25°C
mV/°C
RDS(on)
Static Drain–Source
On–Resistance
VGS = –10 V, ID = –3A
91
112
150
110
140
192
mΩ
V
GS = –4.5 V, ID = –2.7 A
VGS = –10 V, ID = –3 A, TJ=125°C
ID(on)
gFS
On–State Drain Current
VGS = –10 V, VDS = –5 V
–10
A
S
Forward Transconductance
VDS = –5 V,
ID = –3.3 A
8
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
714
84
pF
pF
pF
VDS = –30 V, V GS = 0 V,
f = 1.0 MHz
Output Capacitance
Reverse Transfer Capacitance
33
Switching Characteristics (Note 2)
td(on)
tr
td(off)
tf
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
8
11
28
8.5
15
2
15
19
45
17
21
ns
ns
V
DD = –30 V, ID = –1 A,
VGS = –10 V, RGEN = 6 Ω
ns
ns
Qg
Qgs
Qgd
nC
nC
nC
V
V
DS = –30V,
GS = –10 V
ID = –3A,
3
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
–1.3
–1.2
A
V
VSD
Drain–Source Diode Forward
Voltage
VGS = 0 V, IS = –1.3 A (Note 2)
–0.8
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2
Electrical Characteristics (continued)
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Schottky Diode Characteristics
IR
Reverse Leakage
Forward Voltage
VR = 45 V
2.8
2.2
0.44
0.34
0.49
0.42
80
80
0.53
0.45
0.62
0.57
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
µA
mA
V
VF
IF = 1 A
IF = 2 A
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient
(Note 1a)
(Note 1)
78
40
RθJA
°C/W
°C/W
Thermal Resistance, Junction-to-Case
RθJC
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a)
78°C/W when
mounted on a
0.5in2 pad of 2
oz copper
b)
125°C/W when
mounted on a
0.02 in2 pad of
2 oz copper
c)
135°C/W when
mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
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3
Typical Characteristics
2.2
2
10
VGS = -10V
-4.5V
-6.0V
-3.5V
8
6
4
2
0
VGS = -3.0V
1.8
1.6
1.4
1.2
1
-3.0V
-3.5V
-4.0V
-4.5V
-2.5V
-6.0V
-10V
0.8
0
1
2
3
4
5
0
2
4
6
8
10
-VDS, DRAIN-SOURCE VOLTAGE (V)
- ID, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
2
1.8
1.6
1.4
1.2
1
0.29
ID = -3A
VGS = -10V
ID = -1.5A
0.24
TA = 125oC
0.19
0.14
TA = 25oC
0.09
0.8
0.6
0.4
0.04
2
4
6
8
10
-50
-25
0
25
50
75
100
125
150
TJ, JUNCTION TEMPERATURE (oC)
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
10
VGS = 0V
TA = -55oC
VDS = -5V
25oC
125oC
10
8
6
4
2
0
TA = 125oC
1
25oC
0.1
-55oC
0.01
0.001
0.0001
0
0.2
0.4
0.6
0.8
1
1.2
1
1.5
2
2.5
3
3.5
4
-VSD, BODY DIODE FORWARD VOLTAGE (V)
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
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4
Typical Characteristics
1000
800
600
400
200
0
10
f = 1MHz
VGS = 0 V
ID = -3A
VDS = -20V
-40V
-30V
8
6
4
2
0
CISS
COSS
CRSS
0
5
10
15
20
0
3
6
9
12
15
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
10
1.00E-01
TJ = 125oC
1.00E-02
1.00E-03
1.00E-04
1.00E-05
1.00E-06
1.00E-07
1.00E-08
TJ = 125oC
1
0.1
TJ = 25oC
TJ = 25oC
0.01
0.001
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0
10
20
30
40
50
60
VF, FORWARD VOLTAGE (V)
VR, REVERSE VOLTAGE (V)
Figure 9. Schottky Diode Forward Voltage.
Figure 10. Schottky Diode Reverse Current.
1
D = 0.5
RθJA(t) = r(t) + RθJA
RθJA = 135 °C/W
0.2
P(pk)
0.1
0.1
t1
0.05
t2
J - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
T
0.02
0.01
SINGLE PULSE
0.01
0.001
0.01
0.1
1
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
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5
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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❖
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