FDFS2P753Z [ONSEMI]
-30V Integrated P-Channel PowerTrench® MOSFET and Schottky Diode;
| 型号： | FDFS2P753Z |
| 厂家： | 
ONSEMI |
| 描述： | -30V Integrated P-Channel PowerTrench® MOSFET and Schottky Diode 脉冲 光电二极管 晶体管 |
| 文件： | 总9页 (文件大小：591K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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November 2006
FDFS2P753Z
tm
®
Integrated P-Channel PowerTrench MOSFET and Schottky Diode
-30V, -3A, 115mΩ
Features
General Description
Max rDS(on) = 115mΩ at VGS = -10V, ID = -3.0A
Max rDS(on) = 180mΩ at VGS = -4.5V, ID = -1.5A
VF < 500mV @ 1A
The FDFS2P753Z combines the exceptional performance of
Fairchild's PowerTrench MOSFET technology with a very low
forward voltage drop Schottky barrier rectifier in an SO-8
package.
VF < 580mV @ 2A
This device is designed specifically as a single package solution
for DC to DC converters. It features a fast switching, low gate
charge MOSFET with very low on-state resistance. The
independently connected Schottky diode allows its use in a
variety of DC/DC converter topologies.
Schottky and MOSFET incorporated into single power surface
mount SO-8 package
Electrically independent Schottky and MOSFET pinout for
design flexibility
Application
RoHS Compliant
DC - DC Conversion
D
D
4
G
S
A
D
D
C
C
5
6
7
8
C
C
3
2
G
SO-8
S
1
A
A
Pin 1
A
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDS
VGS
Parameter
Ratings
Units
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
-30
V
V
±25
(Note 1a)
-3
ID
A
-16
PD
Power Dissipation
(Note 1a)
(Note 2)
1.6
W
mJ
V
EAS
Single Pulse Avalanche Energy
6
-20
VRRM
IO
Schottky Repetitive Peak Reverse Voltage
Schottky Average Forward Current
(Note 1a)
-2
A
TJ, TSTG
Operating and Storage Junction Temperature Range
-55 to +150
°C
Thermal Characteristics
RθJA
RθJC
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
(Note 1a)
(Note 1)
78
40
°C/W
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape Width
12mm
Quantity
FDFS2P753Z
FDFS2P753Z
SO-8
330mm
2500 units
1
©2006 Fairchild Semiconductor Corporation
FDFS2P753Z Rev.A
www.fairchildsemi.com
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = -250µA, VGS = 0V
-30
V
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
I
D = -250µA, referenced to 25°C
DS = -24V,
VGS = 0V
-21
mV/°C
V
-1
IDSS
IGSS
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
µA
µA
TJ = 125°C
-100
±10
VGS = ±25V, VDS = 0V
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = -250µA
-1
-2.1
5
-3
V
∆VGS(th)
∆TJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = -250µA, referenced to 25°C
mV/°C
V
GS = -10V, ID = -3.0A
69
115
180
VGS = -4.5V, ID = -1.5A
115
rDS(on)
Drain to Source On-Resistance
mΩ
VGS = -10V, ID = -3.0A, TJ =
125°C
97
6
162
gFS
Forward Transconductance
VDS = -5V, ID = -3.0A
S
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
340
80
455
110
100
pF
pF
pF
Ω
V
DS = -10V, VGS = 0V,
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
f = 1MHz
65
f = 1MHz
18
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
7
14
50
ns
ns
VDD = -10V, ID = -3.0A
31
V
GS = -10V, RGEN = 6Ω
Turn-Off Delay Time
Fall Time
18
33
ns
20
35
ns
Qg(TOT)
Qg(4.5)
Qgs
Total Gate Charge at -10V
Total Gate Charge at -4.5V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
VGS = 0V to -10V
VGS = 0V to -4.5V
6.6
3.3
1.3
1.6
9.3
4.6
nC
nC
nC
nC
VDD = -10V
D = -3.0A
I
Qgd
Drain-Source Diode Characteristics
VSD
trr
Source to Drain Diode Forward Voltage
Reverse Recovery Time
VGS = 0V, IS = -2.0A (Note 3)
-0.9
20
-1.2
30
V
ns
nC
IF = -3.0A, di/dt = 100A/µs
Qrr
Reverse Recovery Charge
14
21
Schottky Diode Characteristics
TJ = 25°C
VR = -20V
-190
-66
µA
IR
Reverse Leakage
TJ = 125°C
mA
TJ = 25°C
IF = 1A
0.5
TJ = 125°C
0.39
0.58
0.53
VF
Forward Voltage
V
TJ = 25°C
IF = 2A
TJ = 125°C
www.fairchildsemi.com
2
FDFS2P753Z Rev.A
Notes:
1: R
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting
θJA
surface of the drain pins. R
is guaranteed by design while R
is determined by the user’s board design.
θJC
θCA
b) 135°C/W when
mounted on a
minimun pad
a) 78°C/W when
mounted on a 0.5in2
pad of 2 oz copper
o
2: Starting T = 25 C, L = 3mH, I = 2A, V = 27V, V = 10V
J
AS
DD
GS
3: Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%.
www.fairchildsemi.com
3
FDFS2P753Z Rev.A
Typical Characteristics TJ = 25°C unless otherwise noted
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
16
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
V
= -10V
GS
12
8
VGS = 3.5V
VGS = 4V
V
= -5V
VGS = -5V
GS
V
= -4.5V
GS
VGS = -4.5V
VGS = -10V
V
= -4V
4
GS
V
= -3.5V
3
GS
0
0
4
8
12
16
0
1
2
4
5
-I , DRAIN CURRENT(A)
D
-V , DRAIN TO SOURCE VOLTAGE (V)
DS
Figure 1. On Region Characteristics
Figure2. N o r m a l i z e d O n - R e s i s ta n c e
vs Drain Current and Gate Voltage
450
1.6
ID = -3A
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
I
= -3A
D
400
350
300
250
200
150
100
50
VGS = -10V
1.4
1.2
1.0
0.8
0.6
T = 150oC
J
T
= 25oC
5
J
3
4
6
7
8
9
10
-75 -50 -25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
-VGS, GATE TO SOURCE VOLTAGE (V)
F ig u re 3. No rmal i zed O n-Re si stan ce
vs Junction Temperature
Figure4. On-Resistance vs Gate to
Source Voltage
20
16
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
10
1
V
GS
= 0V
12
8
T = 150oC
J
T = 150oC
J
T
J
= 25oC
0.1
T
J
= 25oC
4
0.01
T
= -55oC
J
T
J
= -55oC
1.0
0
1E-3
1
2
3
4
5
6
0.2
0.4
0.6
0.8
1.2
-VGS, GATE TO SOURCE VOLTAGE (V)
-V , BODY DIODE FORWARD VOLTAGE (V)
SD
Figure 5. Transfer Characteristics
Figure6. Source to Drain Diode
Forward Voltage vs Source Current
www.fairchildsemi.com
4
FDFS2P753Z Rev.A
Typical Characteristics TJ = 25°C unless otherwise noted
10
800
V
DD
= -5V
8
6
4
2
0
C
iss
V
DD
= -10V
C
oss
100
20
V
DD
= -15V
f = 1MHz
= 0V
V
GS
C
rss
30
0.1
1
10
0
2
4
6
8
-VDS, DRAIN TO SOURCE VOLTAGE (V)
-Q , GATE CHARGE(nC)
g
Figure 7. Gate Charge Characteristics
Figure8. C a p a c i t a n c e v s D r a i n
to Source Voltage
4
3
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
V
GS
= -10V
TJ = 25oC
2
TJ = 125oC
V
GS
= -4.5V
100
R
θJA
= 78oC/W
50
1
0.01
0.1
1
25
75
125
150
TA, AMBIENT TEMPERATURE (oC)
tAV, TIME IN AVALANCHE(ms)
Figure9. U n c l a m p e d I n d u c t i v e
Switching Capability
Figure10. Maximum Continuous Drain
Current vs Case Temperature
30
10
200
VGS = -10V
100
FOR TEMPERATURES
o
ABOVE 25 C DERATE PEAK
100us
CURRENT AS FOLLOWS:
150 – T
A
1ms
1
0.1
----------------------
I = I
25
125
10
10ms
o
T
= 25 C
A
100ms
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(on)
1s
10s
DC
SINGLE PULSE
T
J
= MAX RATED
SINGLE PULSE
1
O
T
= 25 C
A
0.6
0.01
10-4
10-3
10-2
t, PULSE WIDTH (s)
10-1
100
101
102
103
80
0.1
1
10
-V , DRAIN to SOURCE VOLTAGE (V)
DS
Figure 11. Forward Bias Safe
Operating Area
Figure12. Single Pulse Maximum
Power Dissipation
www.fairchildsemi.com
5
FDFS2P753Z Rev.A
Typical Characteristics TJ = 25°C unless otherwise noted
30
10
10
1
TJ = 125oC
1
T = 125oC
J
0.1
0.1
T = 25oC
0.01
1E-3
J
0.01
TJ = 25oC
1E-3
0.0
0.4
0.8
1.2
1.6
2.0
0
5
10
15
20
VR, REVERSE VOLTAGE (V)
VF, REVERSE VOLTAGE (V)
Figure 13. Schottky Diode Forward Voltage
Figure 14. Schottky Diode Reverse Current
2
DUTY CYCLE-DESCENDING ORDER
1
D = 0.5
0.2
0.1
0.05
0.02
0.01
P
DM
0.1
t
1
t
2
NOTES:
DUTY FACTOR: D = t /t
1
2
0.01
PEAK T = P
J
x Z
x R
+ T
θJA A
DM
θJA
SINGLE PULSE
0.005
10-4
10-3
10-2
10-1
100
101
102
103
t, RECTANGULAR PULSE DURATION (s)
Figure 15. Transient Thermal Response Curve
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6
FDFS2P753Z Rev.A
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
PowerTrench®
PowerXS™
Programmable Active Droop
QFET®
The Power Franchise®
2Cool
AccuPower
AX-CAP*
F-PFS
FRFET®
Global Power ResourceSM
GreenBridge
Green FPS
Green FPS e-Series
Gmax
GTO
IntelliMAX
ISOPLANAR
Making Small Speakers Sound Louder
and Better™
MegaBuck
MICROCOUPLER
MicroFET
MicroPak
MicroPak2
MillerDrive
MotionMax
Motion-SPM
mWSaver
BitSiC
TinyBoost
TinyBuck
QS
Build it Now
CorePLUS
CorePOWER
CROSSVOLT
CTL
Current Transfer Logic
DEUXPEED®
Dual Cool™
EcoSPARK®
EfficientMax
Quiet Series
RapidConfigure
TinyCalc
TinyLogic®
TINYOPTO
TinyPower
TinyPWM
TinyWire
Saving our world, 1mW/W/kW at a time™
SignalWise
SmartMax
SMART START
Solutions for Your Success
SPM®
TranSiC
TriFault Detect
TRUECURRENT®*
SerDes
ESBC
STEALTH
®
SuperFET®
Fairchild®
SuperSOT-3
UHC®
Ultra FRFET
UniFET
VCX
VisualMax
VoltagePlus
XS™
Fairchild Semiconductor®
FACT Quiet Series
FACT®
SuperSOT-6
SuperSOT-8
SupreMOS®
SyncFET
Sync-Lock™
FAST®
OptoHiT
FastvCore
FETBench
FlashWriter®*
FPS
OPTOLOGIC®
OPTOPLANAR®
®
*
®
* Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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Datasheet contains the design specifications for product development. Specifications may change
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Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
Semiconductor reserves the right to make changes at any time without notice to improve design.
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The datasheet is for reference information only.
Rev. I61
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regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
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