FDFS6N754 [ONSEMI]
集成式 N 沟道，Power Trench® MOSFET 和肖特基二极管，30V，4A，56mΩ;
| 型号： | FDFS6N754 |
| 厂家： | 
ONSEMI |
| 描述： | 集成式 N 沟道，Power Trench® MOSFET 和肖特基二极管，30V，4A，56mΩ PC 开关 脉冲 光电二极管 晶体管 肖特基二极管 |
| 文件： | 总9页 (文件大小：555K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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Final Datasheet
August 2014
FDFS6N754
®
Integrated N-Channel PowerTrench MOSFET and Schottky Diode
30V, 4A, 56mΩ
Features
General Description
Max rDS(on) = 56mΩ at VGS = 0V, ID = 4A
The FDFS6N754 combines the exceptional performance of
Fairchild's PowerTrench MOSFET technology with a very
low forward voltage drop Schottky barrier rectifier in an SO-
8 package.
Max rDS(on) = 75mΩ at VGS = 4.5V, ID = 3.5A
VF < 0.45V @ 2A
This device is designed specifically as a single package
solution for DC to DC converters. It features a fast
switching, low gate charge MOSFET with very low on-state
resistance. The independently connected Schottky diode
allows its use in a variety of DC/DC converter topologies.
VF < 0.28V @ 100mA
Schottky and MOSFET incorporated into single power
surface mount SO-8 package
Electrically independent Schottky and MOSFET pinout
Applications
DC/DC converters
for design flexibility
Low Gate Charge (Qg = 4nC)
Low Miller Charge
D
D
1
2
3
4
8
7
6
5
A
A
S
C
C
D
D
C
C
G
SO-8
S
G
A
Pin 1
A
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDS
VGS
Parameter
Ratings
Units
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
30
V
V
±20
(Note 1a)
4
ID
A
20
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
Schottky Repetitive Peak Reverse Voltage
Schottky Average Forward Current
Operating and Storage Temperature
2
PD
W
(Note 1a)
(Note 1a)
1.6
VRRM
IO
30
2
V
A
TJ, TSTG
-55 to 150
°C
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
(Note 1)
78
40
°C/W
°C/W
RθJC
Thermal Resistance, Junction-to-Case
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape Width
12mm
Quantity
FDFS6N754
FDFS6N754
SO-8
330mm
2500 units
©2006 Fairchild Semiconductor Corporation
FDFS6N754 Rev. A1
1
www.fairchildsemi.com
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250µA, VGS = 0V
30
V
Breakdown Voltage Temperature
Coefficient
ID = 250µA, referenced to
25°C
∆BVDSS
∆TJ
24.5
mV/°C
1
VDS = 24V
VGS = 0V
IDSS
IGSS
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
µA
TJ = 125°C
20
VGS = ±20V, VDS = 0V
±100
nA
On Characteristics (Note 2)
VGS(th)
Gate to Source Threshold Voltage
VDS = VGS, ID = 250µA
1
1.7
2.5
V
∆VGS(th)
∆TJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = 250µA, referenced to
25°C
-4.2
mV/°C
V
GS = 10V, ID = 4A
42
53
56
75
VGS = 4.5V, ID =3.5A
rDS(on)
Drain to Source On Resistance
mΩ
VGS = 10V, ID = 4A,
TJ = 125°C
61
10
81
gFS
Forward Transconductance
VDS = 5V, ID = 4A
S
Dynamic Characteristics
Ciss
Coss
Crss
RG
Input Capacitance
225
80
299
107
63
pF
pF
pF
Ω
VDS = 15V, VGS = 0V,
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
42
f = 1.0MHz
5.1
Switching Characteristics (Note 2)
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
6
8
12
16
32
10
6
ns
ns
V
DD = 15V, ID = 1A
VGS = 10V, RGS = 6Ω
Turn-Off Delay Time
Fall Time
20
2
ns
ns
Qg(TOT)
Qg(5)
Qgs
Qgd
Total Gate Charge at 10V
Total Gate Charge at 5V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
4
nC
nC
nC
nC
VDS = 15V,
2
3
I
D = 4A
0.6
1
Drain-Source Diode Characteristics and Maximum Ratings
VSD
trr
Source to Drain Diode Forward Voltage VGS = 0V, IS = 1.3A (Note 2)
0.8
13
4
1.2
20
6
V
Reverse Recovery Time
Reverse Recovery Charge
IF = 4A, di/dt = 100A/µs
IF = 4A, di/dt = 100A/µs
ns
nC
Qrr
Schottky Diode Characteristics
VR
Reverse Breakdown Voltage
IR = -1mA
-30
V
TJ = 25oC
TJ = 125oC
TJ = 25oC
TJ = 125oC
TJ = 25oC
TJ = 125oC
39
18
250
280
450
µA
mA
IR
Reverse Leakage
VR = -10V
225
140
364
290
IF = 100mA
VF
Forward Voltage
mV
IF = 2A
FDFS6N754 Rev. A1
2
www.fairchildsemi.com
Notes:
1:
drain pins. R
R
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the
θJA
is guaranteed by design while R
is determined by the user’s board design.
θJC
θCA
c) 135°C/W when
mounted on a
minimun pad
b) 125°C/W when
mounted on a 0.02 in
pad of 2 oz copper
a) 78°C/W when
mounted on a 0.5in
pad of 2 oz copper
2
2
Scale 1 : 1 on letter size paper
2: Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
www.fairchildsemi.com
FDFS6N754 Rev. A1
3
Typical Characteristics TJ = 25°C unless otherwise noted
20
15
10
5
3.0
2.5
2.0
1.5
1.0
0.5
VGS = 10V
VGS = 6V
VGS = 3.0V
VGS = 4.5V
VGS = 5V
VGS = 4.5V
VGS = 5V
PULSE DURATION = 300µs
DUTY CYCLE = 2.0%MAX
VGS = 6V
VGS = 3.5V
VGS = 3.5V
VGS = 3V
VGS = 10V
VGS = 2.5V
PULSE DURATION = 300µs
DUTY CYCLE = 2.0%MAX
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
4
8
12
16
20
1
VDS, DRAIN TO SOURCE VOLTAGE (V)
ID, DRAIN CURRENT(A)
Figure 1. On Region Characteristics
Figure 2. On-Resistance vs Drain Current and
Gate Voltage
1.6
0.20
I
= 4A
PULSE DURATION = 300µs
DUTY CYCLE = 2.0%MAX
D
I
D
= 3A
V
= 10V
GS
1.4
1.2
1.0
0.8
0.6
0.15
0.10
0.05
0.00
T = 125oC
J
T
= 25oC
J
-60
-30
0
30
60
90
120
150
2
4
6
8
10
TJ, JUNCTION TEMPERATURE (oC)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On Resistance vs Temperature
Figure 4. On-Resistance vs Gate to Source
Voltage
20
30
PULSE DURATION = 300µs
DUTY CYCLE = 2.0%MAX
VGS = 0V
10
16
12
8
VDS = 5V
TJ = 125oC
1
TJ = 25oC
TJ = 125oC
0.1
TJ = -55oC
0.01
4
TJ = -55oC
TJ = 25oC
4
0
1E-3
1
2
3
5
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode Forward Voltage
vs Source Current
FDFS6N754 Rev. A1
4
www.fairchildsemi.com
Typical Characteristics TJ = 25°C unless otherwise noted
500
100
20
10
8
f = 1MHz
= 0V
V
GS
C
iss
VDD = 10V
VDD = 20V
6
C
oss
4
VDD = 15V
C
rss
2
0
40
0.1
1
10
0
1
2
3
4
5
VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs Drain to Source Voltage
10
9
6
5
8
7
6
5
4
3
2
1
0
VGS = 10V
4
T
= 25oC
J
3
2
VGS = 4.5V
R
θJC = 40oC/W
1
0.01
0.1
tAV, TIME IN AVALANCHE(ms)
1
2
25
50
75
100
125
150
TC, CASE TEMPERATURE (oC)
Figure 9. Unclamped Inductive Switching
Capability
Figure 10. Maximum Continuous Drain Current vs
Case Temperature
100
100
o
T
= 25 C
VGS = 10V
A
FOR TEMPERATURES
10us
o
ABOVE 25 C DERATE PEAK
10
CURRENT AS FOLLOWS:
150 – T
100us
A
I = I
25
-----------------------
10
1
125
1ms
10ms
100ms
0.1
1s
10s
DC
SINGLE PULSE
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(on)
T
= MAX RATED
= 25OC
J
SINGLE PULSE
T
A
1
10-4
0.01
10-3
10-2
t, PULSE WIDTH (s)
10-1
100
101
102
103
0.1
1
10
80
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe Operating Area
Figure 12. Single Pulse Maximum Power
Dissipation
FDFS6N754 Rev. A1
5
www.fairchildsemi.com
Typical Characteristics TJ = 25°C unless otherwise noted
100
10
0.1
0.01
1E-3
1E-4
1E-5
TJ = 125oC
TJ = 125oC
1
TJ = 25oC
0.1
TJ = 25oC
0.01
1E-3
20
1E
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
5
10
15
20
25
30
VF, FORWARD VOLTAGE (V)
VR, REVERSE VOLATGE(V)
Figure 13. Schottky Diode Forward Voltage
Figure 14. Schottky Diode Reverse Current
2
DUTY CYCLE-DESCENDING ORDER
1
D = 0.5
0.2
0.1
0.05
0.02
0.01
P
DM
0.1
t
1
t
2
NOTES:
DUTY FACTOR: D = t /t
1
2
SINGLE PULSE
PEAK T = P
J
x Z
x R
+ T
DM
θJA
θJA A
0.01
10-4
10-3
10-2
10-1
100
101
102
103
t, RECTANGULAR PULSE DURATION (s)
Figure 15. Transient Thermal Response Curve
FDFS6N754 Rev. A1
6
www.fairchildsemi.com
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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