FDG311N [ONSEMI]
P 沟道,PowerTrench® MOSFET,2.5V 指定,1.9 A,115mΩ;型号: | FDG311N |
厂家: | ONSEMI |
描述: | P 沟道,PowerTrench® MOSFET,2.5V 指定,1.9 A,115mΩ 开关 光电二极管 晶体管 |
文件: | 总7页 (文件大小:203K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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February 2000
FDG311N
N-Channel 2.5V Specified PowerTrench MOSFET
General Description
Features
This N-Channel MOSFET is produced using Fairchild
Semiconductor's advanced PowerTrench process that
has been especially tailored to minimize the on-state
resistance and yet maintain low gate charge for
superior switching performance. These devices are
well suited for portable electronics applications.
• 1.9 A, 20 V. RDS(ON) = 0.115 Ω @ VGS = 4.5 V
RDS(ON) = 0.150 Ω @ VGS = 2.5 V.
• Low gate charge (3nC typical).
• High performance trench technology for extremely low
Applications
RDS(ON)
.
• Load switch
• Power management
• DC/DC converter
• Compact industry standard SC70-6 surface mount
package.
S
D
1
6
5
4
D
2
3
G
D
D
SC70-6
Absolute Maximum Ratings TA = 25 C unless otherwise noted
Symbol
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
Gate-Source Voltage
20
V
±
VGSS
ID
8
V
A
(Note 1a)
Drain Current - Continuous
- Pulsed
1.9
6
PD
(Note 1a)
(Note 1b)
Power Dissipation for Single Operation
0.75
0.48
W
°
C
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 to +150
Thermal Characteristics
(Note 1b)
°
C/W
RθJA
Thermal Resistance, Junction-to-Ambient
260
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape Width
Quantity
FDG311N
7
8mm
3000 units
.
11
2000 Fairchild Semiconductor Corporation
FDG311N Rev. D
Electrical Characteristics
TA = 25 C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
20
V
µ
GS = 0 V, ID = 250 A
V
Breakdown Voltage Temperature
Coefficient
14
∆
DSS
µ
°
°
mV/ C
BV
∆
ID = 250 A, Referenced to 25 C
TJ
IDSS
IGSS
IGSS
Zero Gate Voltage Drain Current
Gate-Body Leakage Forward
Gate-Body Leakage Reverse
VDS = 16 V, VGS = 0 V
VGS = 8 V, VDS = 0 V
VGS = -8 V, VDS = 0 V
1
µ
A
100
-100
nA
nA
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
0.4
0.9
-3
1.5
V
µ
DS = VGS, ID = 250 A
V
Gate Threshold Voltage
Temperature Coefficient
∆
GS(th)
µ
°
°
V
ID = 250 A, Referenced to 25 C
mV/ C
∆
TJ
RDS(on)
Static Drain-Source
On-Resistance
VGS = 4.5 V, ID = 1.9 A
VGS = 4.5 V, ID = 1.9 A,
0.082 0.115
0.110 0.170
Ω
°
TJ = 125 C
0.105 0.150
6
VGS = 2.5 V, ID = 1.6 A
ID(on)
gFS
On-State Drain Current
VGS = 4.5 V, VDS = 5 V
4
A
S
Forward Transconductance
VDS = 5 V, ID = 0.5 A
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
VDS = 10 V, VGS = 0 V,
f = 1.0 MHz
270
55
pF
pF
pF
Output Capacitance
Reverse Transfer Capacitance
20
Switching Characteristics (Note 2)
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD = 10 V, ID = 1 A,
5
9
12
17
18
6
ns
ns
Ω
VGS = 5 V, RGEN = 6
10
2
ns
ns
Qg
VDS = 10 V, ID = 1.9 A,
VGS = 4.5 V
3
4.5
nC
nC
nC
Qgs
Qgd
0.6
0.9
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
0.42
1.2
A
V
(Note 2)
VSD
Drain-Source Diode Forward
Voltage
VGS = 0 V, IS = 0.42 A
0.7
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface
of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) 170°C/W when mounted on a 1 in2 pad of 2oz copper.
b) 260°C/W when mounted on a minimum pad.
2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
FDG311N Rev. D
Typical Characteristics
10
2
1.8
1.6
1.4
1.2
1
VGS = 4.5V
3.5V
3.0V
2.5V
8
6
4
2
0
VGS = 2.0V
2.0V
2.5V
3.0V
3.5V
4.0V
4.5V
1.5V
2
0.8
0
0.5
1
1.5
2.5
3
0
2
4
6
8
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
Figure 2. On-Resistance Variation
with Drain Current and Gate Voltage.
Figure 1. On-Region Characteristics.
0.32
1.6
ID = 1A
ID = 1.9A
GS = 4.5V
0.28
0.24
0.2
V
1.4
1.2
1
0.16
0.12
0.08
0.04
0
TA = 125oC
TA = 25oC
0.8
0.6
-50
-25
0
25
50
75
100
125
150
1
2
3
4
5
TJ, JUNCTION TEMPERATURE (oC)
V
GS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation
with Temperature.
Figure 4. On-Resistance Variation
with Gate-to-Source Voltage.
10
1
10
8
TA = -55oC
VGS = 0V
25oC
125oC
VDS = 5V
TA = 125oC
0.1
6
25oC
-55oC
0.01
0.001
4
2
0.0001
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
0
1
2
3
4
VSD, BODY DIODE FORWARD VOLTAGE (V)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
Figure 5. Transfer Characteristics.
FDG311N Rev. D
Typical Characteristics (continued)
500
400
300
200
100
0
5
f = 1MHz
VGS = 0 V
ID = 1.9A
VDS = 5V
4
3
2
1
0
10V
15V
CISS
COSS
CRSS
0
4
8
12
16
20
0
0.5
1
1.5
2
2.5
3
3.5
4
V
DS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
Figure 7. Gate-Charge Characteristics.
Figure 8. Capacitance Characteristics.
10
1
30
24
18
12
6
SINGLE PULSE
RθJA= 260oC/W
TA= 25oC
RDS(ON) LIMIT
1ms
10ms
100ms
1s
10s
DC
0.1
VGS = 4.5V
SINGLE PULSE
RθJA = 260oC/W
T
A = 25oC
0
0.01
0.1
1
10
100
0.0001
0.001
0.01
0.1
1
10
100
1000
VDS, DRAIN-SOURCE VOLTAGE (V)
SINGLE PULSE TIME (SEC)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
0.5
R
(t) = r(t) * R
JA
θ
JA
θ
0.2
R
=260 C/W
JA
θ
0.1
0.05
0.1
P(pk)
0.05
0.01
0.02
Single Pulse
t1
t2
T - T = P * R
(t)
JA
θ
J
A
0.01
Duty Cycle, D = t 1/ t
2
0.005
0.0001
0.001
0.01
0.1
, TIME (sec)
1
10
100
300
t
1
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient themal response will change depending on the circuit board design.
FDG311N Rev. D
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ISOPLANAR™
MICROWIRE™
POP™
PowerTrench
QFET™
SyncFET™
TinyLogic™
UHC™
ACEx™
CoolFET™
CROSSVOLT™
E2CMOSTM
VCX™
FACT™
QS™
FACT Quiet Series™
FAST®
Quiet Series™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
FASTr™
GTO™
HiSeC™
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DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
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As used herein:
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failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
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2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
www.fairchildsemi.com
Rev. D
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
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