FDG328P_技术文档

MOSFET– Specified,

P-Channel, POWERTRENCH⁾

2.5 V

FDG328P

General Description

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This P−Channel 2.5 V specified MOSFET is produced in a rugged

gate version of ON Semiconductor’s advanced POWERTRENCH

process. It has been optimized for power management applications for

a wide range of gate drive voltages (2.5 V – 12 V).

S

D

G

D

Features

D

Pin 1

• −1.5 A, −20 V

SC−88/SC70−6/SOT−363

CASE 419B−02

♦ R

= 0.145 W @ V = −4.5 V

GS

DS(ON)

= 0.210 W @ V = −2.5 V

DS(ON)

GS

• Low Gate Charge

MARKING DIAGRAM

• High Performance Trench Technology for Extremely Low R

• Compact Industry Standard SC70−6 Surface Mount Package

• These Devices are Pb−Free and are RoHS Compliant

DS(ON)

28M

Applications

• Load Switch

• Power Management

• DC/DC Converter

28

M

= Specific Device Code

= Assembly Operation Month

PIN CONNECTIONS

ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted)

A

Symbol

Parameter

Drain−Source Voltage

Ratings

−20

Units

1

6

5

4

V

DSS

V

GSS

V

A

Gate−Source Voltage

12

2

3

I

D

Drain Current

Continuous

(Note 1a)

−1.5

Pulsed

−6

0.75

P

D

Power Dissipation for

Single Operation

(Note 1a)

(Note 1b)

W

0.48

ORDERING INFORMATION

See detailed ordering and shipping information on page 2 of

this data sheet.

T , T

Operating and Storage Junction

Temperature Range

−55 to +150

°C

J

STG

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

THERMAL CHARACTERISTICS

Symbol

Parameter

Ratings

Unit

R

Thermal Resistance, Junction−to−Ambient (Note 1b)

260

_C/W

q

JA

1. R

is the sum of the junction−to−case and case−to−ambient thermal resistance where the case thermal reference is defined as the solder

q

JA

mounting surface of the drain pins. R

is guaranteed by design while R

is determined by the user’s board design.

q

JC

CA

2

a) 170°C/W when mounted on a 1 in pad of 2 oz copper.

b) 260°C/W when mounted on a minimum pad.

1

Publication Order Number:

FDG328P/D

June, 2020 − Rev. 3

FDG328P

PACKAGE MARKING AND ORDERING INFORMATION

†

Device Marking

Device

Reel Size

Tape Width

Shipping

28

FDG328P

7”

8 mm

3000 / Tape & Reel

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

A

Symbol

Parameter

Test Conditions

Min

Typ

Max

Unit

OFF CHARACTERISTICS

BV

Drain−Source Breakdown Voltage

V

I

= 0 V, I = −250 mA

−20

−

V

DSS

GS

D

DBV

/ DT

Breakdown Voltage Temperature

Coefficient

= −250 mA, Referenced to 25_C

−

−9

mV/_C

DSS

J

D

I

Zero Gate Voltage Drain Current

Gate−Body Leakage, Forward

Gate−Body Leakage, Reverse

V

DS

V

GS

V

GS

= −16 V, V = 0 V

−

−1

100

mA

nA

DSS

GS

I

= 12 V, V = 0 V

DS

GSSF

I

= −12 V, V = 0 V

−100

GSSR

DS

ON CHARACTERISTICS (Note 2)

V

Gate Threshold Voltage

V

I

= V , I = −250 mA

−0.6

−

−1.5

V

GS(th)

DS

GS

D

DV

/ DT

Gate Threshold Voltage

Temperature Coefficient

= −250 mA, Referenced to 25_C

−

3

−

mV/_C

GS(th)

J

D

R

Static Drain−Source

On−Resistance

V

= −4.5 V, I = −1.5 A

−

120

169

156

145

210

203

mW

DS(on)

GS

D

= −2.5 V, I = −1.2 A

D

= −4.5 V, I = −1.5 A, T = 125_C

D

J

I

On−State Drain Current

V

GS

V

DS

= −4.5 V, V = −5 V

−3

−

A

S

D(on)

DS

g

FS

Forward Transconductance

= −5 V, I = −1.5 A

−

3

D

DYNAMIC CHARACTERISTICS

C

Input Capacitance

V

DS

= −10 V, V = 0 V, f = 1.0 MHz

−

337

88

−

pF

iss

GS

C

Output Capacitance

oss

C

Reverse Transfer Capacitance

51

rss

SWITCHING CHARACTERISTICS (Note 2)

t

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

Total Gate Charge

Gate−Source Charge

Gate−Drain Charge

V

= −10 V, I = 1 A,

−

9

18

22

20

10

6

ns

d(on)

DD

GS

D

= −4.5 V, R

= 6 W

GEN

t

r

12

10

5

t

ns

d(off)

t

f

ns

Q

V

DS

V

GS

= −10 V, I = −1.5 A,

3.7

0.7

1.3

nC

g

D

= −4.5 V

Q

−

gs

gd

Q

−

DRAIN−SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

Maximum Continuous Drain−Source Diode Forward Current

I

S

−

−0.62

−1.2

A

V

SD

Drain−Source Diode Forward

Voltage

V

GS

= 0 V, I = −0.62 A (Note 2)

−0.7

S

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

2. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%

www.onsemi.com

2

FDG328P

TYPICAL PERFORMANCE CHARACTERISTICS

2.5

6

5

4

3

2

1

0

V_GS= −4.5 V

−3.5 V

2.25

−2.5 V

V_GS= −2.0 V

−3.0 V

2

1.75

1.5

−2.5 V

−2.0 V

−1.8 V

−3.0 V

1.25

1

−3.5 V

−4.5 V

0.75

0

0.5

1

1.5

2

2.5

0

1

2

3

4

5

6

−V_DS, DRAIN−SOURCE VOLTAGE (V)

−I_D, DRAIN CURRENT (A)

Figure 1. On−Region Characteristics

Figure 2. On−Resistance Variation with

Drain Current and Gate Voltage

0.4

1.5

1.4

1.3

1.2

1.1

1

I_D= −0.8 A

I_D= −1.5 A

V_GS= −4.5 V

0.35

0.3

0.25

0.2

°

T_A= 125 C

0.15

0.1

0.9

0.8

0.7

°

T_A= 25 C

0.05

1.5

2

2.5

3

3.5

4

4.5

5

−50

−25

0

25

50

75

100

125

150

°

−V_GS, GATE TO SOURCE VOLTAGE (V)

T_J, JUNCTION TEMPERATURE ( C)

Figure 3. On−Resistance Variation with

Figure 4. On−Resistance Variation with

Gate−to−Source Voltage

Temperature

6

10

1

°

V_GS= 0 V

T_A= −55 C

V_DS= −5 V

°

25 C

5

4

3

2

1

0

°

125 C

°

T_A= 125 C

°

25 C

0.1

°

−55 C

0.01

0.001

0.0001

0.5

1

1.5

2

2.5

3

0

0.2

0.4

0.6

0.8

1

1.2

1.4

−V_GS, GATE TO SOURCE VOLTAGE (V)

−V_SD, BODY DIODE FORWARD VOLTAGE (V)

Figure 5. Transfer Characteristics

Figure 6. Body Diode Forward Voltage Variation

with Source Current and Temperature

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3

FDG328P

TYPICAL PERFORMANCE CHARACTERISTICS (continued)

5

4

3

2

1

0

600

f = 1 MHz

= 0 V

V_DS= −5 V

−10 V

I_D= −1.5 A

V

GS

500

−15 V

400

C_ISS

300

200

C_OSS

C_RSS

100

0

1

2

3

4

5

0

5

10

15

20

Q_g, GATE CHARGE (nC)

−V_DS, DRAIN TO SOURCE VOLTAGE (V)

Figure 7. Gate Charge Characteristics

Figure 8. Capacitance Characteristics

100

30

24

18

12

6

SINGLE PULSE

R

= 260°C/W

q

JA

T

A

= 25°C

100 ms

10

1

R_DS(ON)LIMIT

1 ms

10 ms

100 ms

1 s

DC

V

= −4.5 V

GS

0.1

0.01

SINGLE PULSE

R

= 260°C/W

q

JA

T

A

= 25°C

0

0.1

1

10

100

0.0001

0.001

0.01

0.1

1

10

100

−V_DS, DRAIN−SOURCE VOLTAGE (V)

SINGLE PULSE TIME (sec)

Figure 10. Single Pulse Maximum Power

Dissipation

Figure 9. Maximum Safe Operating Area

1

D = 0.5

R

(t) = r(t) * R

= 260°C/W

0.2

q

JA

0.1

0.01

0.05

0.02

P(pk)

0.01

t₁

t ₂

SINGLE PULSE

T

− T = P * R

(t)

q

JA

J

A

Duty Cycle, D = t / t

1

2

0.001

0.0001

0.001

0.01

0.1

1

10

100

1000

t₁, TIME (sec)

Thermal characterization performed using the conditions described in Note 1b.

Transient thermal response will change depending on the circuit board design.

Figure 11. Transient Thermal Response Curve

POWERTRENCH is a registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United

States and/or other countries.

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4

MECHANICAL CASE OUTLINE

PACKAGE DIMENSIONS

SC−88/SC70−6/SOT−363

CASE 419B−02

ISSUE Y

1

DATE 11 DEC 2012

SCALE 2:1

2X

aaa H

D

NOTES:

D

H

1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.

2. CONTROLLING DIMENSION: MILLIMETERS.

A

3. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD FLASH,

PROTRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRU-

SIONS, OR GATE BURRS SHALL NOT EXCEED 0.20 PER END.

4. DIMENSIONS D AND E1 AT THE OUTERMOST EXTREMES OF

THE PLASTIC BODY AND DATUM H.

5. DATUMS A AND B ARE DETERMINED AT DATUM H.

6. DIMENSIONS b AND c APPLY TO THE FLAT SECTION OF THE

LEAD BETWEEN 0.08 AND 0.15 FROM THE TIP.

7. DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSION.

ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 TOTAL IN

EXCESS OF DIMENSION b AT MAXIMUM MATERIAL CONDI-

TION. THE DAMBAR CANNOT BE LOCATED ON THE LOWER

RADIUS OF THE FOOT.

D

GAGE

PLANE

6

1

5

2

4

3

L

L2

E1

E

DETAIL A

aaa

C

2X

2X 3 TIPS

bbb H

D

e

MILLIMETERS

DIM MIN NOM MAX

−−−

INCHES

MIN

−−−

NOM MAX

−−− 0.043

−−− 0.004

6X b

B

TOP VIEW

A

−−−

1.10

A1 0.00

A2 0.70

0.10 0.000

M

ddd

C A-B D

0.90

0.20

0.15

2.00

2.10

1.25

0.65 BSC

0.36

1.00 0.027 0.035 0.039

0.25 0.006 0.008 0.010

0.22 0.003 0.006 0.009

2.20 0.070 0.078 0.086

2.20 0.078 0.082 0.086

1.35 0.045 0.049 0.053

0.026 BSC

b

C

D

E

0.15

0.08

1.80

2.00

A2

DETAIL A

A

E1 1.15

e

L

0.26

0.46 0.010 0.014 0.018

0.006 BSC

L2

0.15 BSC

0.15

aaa

bbb

ccc

ddd

0.006

0.012

0.004

0.30

0.10

6X

ccc C

A1

SEATING

PLANE

c

C

SIDE VIEW

END VIEW

GENERIC

MARKING DIAGRAM*

RECOMMENDED

SOLDERING FOOTPRINT*

6

6X

0.30

XXXMG

6X

0.66

G

1

2.50

XXX = Specific Device Code

M

= Date Code*

G

= Pb−Free Package

0.65

(Note: Microdot may be in either location)

PITCH

*Date Code orientation and/or position may

vary depending upon manufacturing location.

DIMENSIONS: MILLIMETERS

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

*This information is generic. Please refer to

device data sheet for actual part marking.

Pb−Free indicator, “G” or microdot “G”, may

or may not be present. Some products may

not follow the Generic Marking.

STYLES ON PAGE 2

Electronic versions are uncontrolled except when accessed directly from the Document Repository.

Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

DOCUMENT NUMBER:

DESCRIPTION:

98ASB42985B

SC−88/SC70−6/SOT−363

PAGE 1 OF 2

onsemi and

are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves

the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular

purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation

special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.

www.onsemi.com

SC−88/SC70−6/SOT−363

CASE 419B−02

ISSUE Y

DATE 11 DEC 2012

STYLE 1:

PIN 1. EMITTER 2

2. BASE 2

STYLE 2:

CANCELLED

STYLE 3:

CANCELLED

STYLE 4:

STYLE 5:

STYLE 6:

PIN 1. ANODE 2

2. N/C

PIN 1. CATHODE

2. CATHODE

3. COLLECTOR

4. EMITTER

5. BASE

PIN 1. ANODE

2. ANODE

3. COLLECTOR 1

4. EMITTER 1

5. BASE 1

3. COLLECTOR

3. CATHODE 1

4. ANODE 1

5. N/C

4. EMITTER

5. BASE

6. COLLECTOR 2

6. ANODE

6. CATHODE

6. CATHODE 2

STYLE 7:

STYLE 8:

CANCELLED

STYLE 9:

STYLE 10:

STYLE 11:

STYLE 12:

PIN 1. SOURCE 2

2. DRAIN 2

3. GATE 1

PIN 1. EMITTER 2

2. EMITTER 1

3. COLLECTOR 1

4. BASE 1

PIN 1. SOURCE 2

2. SOURCE 1

3. GATE 1

PIN 1. CATHODE 2

2. CATHODE 2

3. ANODE 1

PIN 1. ANODE 2

2. ANODE 2

3. CATHODE 1

4. ANODE 1

5. ANODE 1

6. CATHODE 2

4. SOURCE 1

5. DRAIN 1

6. GATE 2

4. DRAIN 1

5. DRAIN 2

6. GATE 2

4. CATHODE 1

5. CATHODE 1

6. ANODE 2

5. BASE 2

6. COLLECTOR 2

STYLE 13:

PIN 1. ANODE

2. N/C

STYLE 14:

PIN 1. VREF

2. GND

STYLE 15:

STYLE 16:

STYLE 17:

STYLE 18:

PIN 1. VIN1

2. VCC

PIN 1. ANODE 1

2. ANODE 2

PIN 1. BASE 1

2. EMITTER 2

3. COLLECTOR 2

4. BASE 2

PIN 1. BASE 1

2. EMITTER 1

3. COLLECTOR 2

4. BASE 2

3. COLLECTOR

4. EMITTER

5. BASE

3. GND

3. ANODE 3

3. VOUT2

4. VIN2

5. GND

6. VOUT1

4. IOUT

5. VEN

6. VCC

4. CATHODE 3

5. CATHODE 2

6. CATHODE 1

5. EMITTER 1

6. COLLECTOR 1

5. EMITTER 2

6. COLLECTOR 1

6. CATHODE

STYLE 19:

PIN 1. I OUT

2. GND

STYLE 20:

STYLE 21:

PIN 1. ANODE 1

2. N/C

STYLE 22:

PIN 1. D1 (i)

2. GND

STYLE 23:

PIN 1. Vn

2. CH1

3. Vp

STYLE 24:

PIN 1. CATHODE

2. ANODE

PIN 1. COLLECTOR

2. COLLECTOR

3. BASE

3. GND

3. ANODE 2

4. CATHODE 2

5. N/C

3. D2 (i)

3. CATHODE

4. CATHODE

5. CATHODE

6. CATHODE

4. V CC

4. EMITTER

5. COLLECTOR

6. COLLECTOR

4. D2 (c)

5. VBUS

6. D1 (c)

4. N/C

5. V EN

5. CH2

6. N/C

6. V REF

6. CATHODE 1

STYLE 30:

STYLE 25:

STYLE 26:

PIN 1. SOURCE 1

2. GATE 1

STYLE 27:

PIN 1. BASE 2

2. BASE 1

STYLE 28:

PIN 1. DRAIN

2. DRAIN

3. GATE

STYLE 29:

PIN 1. ANODE

2. ANODE

PIN 1. SOURCE 1

2. DRAIN 2

3. DRAIN 2

4. SOURCE 2

5. GATE 1

PIN 1. BASE 1

2. CATHODE

3. COLLECTOR 2

4. BASE 2

3. DRAIN 2

4. SOURCE 2

5. GATE 2

3. COLLECTOR 1

4. EMITTER 1

5. EMITTER 2

6. COLLECTOR 2

3. COLLECTOR

4. EMITTER

5. BASE/ANODE

6. CATHODE

4. SOURCE

5. DRAIN

6. DRAIN

5. EMITTER

6. COLLECTOR 1

6. DRAIN 1

Note: Please refer to datasheet for

style callout. If style type is not called

out in the datasheet refer to the device

datasheet pinout or pin assignment.

Electronic versions are uncontrolled except when accessed directly from the Document Repository.

Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

DOCUMENT NUMBER:

DESCRIPTION:

98ASB42985B

SC−88/SC70−6/SOT−363

PAGE 2 OF 2

onsemi and

are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves

the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular

purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation

special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.

www.onsemi.com

onsemi,

, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates

and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.

A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any

products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the

information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use

of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products

and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information

provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may

vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license

under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems

or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should

Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,

and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death

associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal

Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

ADDITIONAL INFORMATION

TECHNICAL PUBLICATIONS:

Technical Library: www.onsemi.com/design/resources/technical−documentation

onsemi Website: www.onsemi.com

ONLINE SUPPORT: www.onsemi.com/support

For additional information, please contact your local Sales Representative at

www.onsemi.com/support/sales




型号：	FDG328P
厂家：	ONSEMI
描述：	P 沟道，2.5V，指定 PowerTrench® MOSFET，-20 V，-1.5 A，145 mΩ 开关光电二极管晶体管
文件：	总7页 (文件大小：300K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

FDG328P [ONSEMI]

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