FDG330P [ONSEMI]
P 沟道,1.8V 指定,PowerTrench® MOSFET,-12 V,-2 A,110 mΩ;型号: | FDG330P |
厂家: | ONSEMI |
描述: | P 沟道,1.8V 指定,PowerTrench® MOSFET,-12 V,-2 A,110 mΩ 开关 光电二极管 晶体管 |
文件: | 总7页 (文件大小:266K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
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December 2001
FDG330P
P-Channel 1.8V Specified PowerTrench MOSFET
General Description
Features
This P-Channel 1.8V specified MOSFET uses
Fairchild’s advanced low voltage PowerTrench process.
It has been optimized for battery power management
applications.
• –2 A, –12 V.
RDS(ON) = 110 mΩ @ VGS = –4.5 V
RDS(ON) = 150 mΩ @ VGS = –2.5 V
DS(ON) = 215 mΩ @ VGS = –1.8 V
R
• Low gate charge
Applications
• High performance trench technology for extremely
low RDS(ON)
• Battery management
• Load switch
• Compact industry standard SC70-6 surface mount
package
S
1
6
5
4
D
D
2
3
G
D
Pin 1
D
SC70-6
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
–12
V
VGSS
ID
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
V
A
8
–2
–6
(Note 1a)
PD
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
0.75
0.48
W
TJ, TSTG
Operating and Storage Junction Temperature Range
–55 to +150
°C
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient
Note 1b)
260
RθJA
°C/W
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
.30
FDG330P
7’’
8mm
3000 units
FDG330P Rev D (W)
2001 Fairchild Semiconductor Corporation
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage
–12
V
V
GS = 0 V,
ID = –250 µA
Breakdown Voltage Temperature
–2.7
∆BVDSS
∆TJ
ID = –250 µA, Referenced to 25°C
mV/°C
Coefficient
IDSS
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
VDS = –10 V, VGS = 0 V
–1
100
–100
µA
nA
nA
IGSSF
IGSSR
VGS = 8 V,
VDS = 0 V
VGS = –8 V, VDS = 0 V
On Characteristics
(Note 2)
Gate Threshold Voltage
VGS(th)
–0.4
–6
–0.7
2.3
–1.5
V
V
DS = VGS
,
ID = –250 µA
Gate Threshold Voltage
∆VGS(th)
∆TJ
ID = –250 µA, Referenced to 25°C
mV/°C
Temperature Coefficient
RDS(on)
Static Drain–Source
On–Resistance
VGS = –4.5 V, ID = –2.0 A
84
107
145
98
110
150
215
148
mΩ
V
GS = –2.5 V, ID = –1.7 A
VGS = –1.8 V, ID = –1.4 A
VGS = –4.5 V, ID = –2.0 A, TJ = 125°C
VGS = –4.5 V, VDS = –5 V
ID(on)
gFS
On–State Drain Current
Forward Transconductance
A
S
VDS = –5 V,
ID = –2.0 A
6.8
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
477
186
124
pF
pF
pF
VDS = –6.0 V, V GS = 0 V,
f = 1.0 MHz
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 2)
V
DD = –6.0 V, ID = 1 A,
td(on)
tr
td(off)
tf
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
10
11
12
18
5
20
20
22
32
7
ns
ns
ns
VGS = –4.5 V, RGEN = 6 Ω
ns
V
DS = –6.0 V, ID = –2.0 A,
Qg
Qgs
Qgd
nC
nC
nC
VGS = –4.5 V
0.8
1.4
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
–0.62
–1.2
A
V
VSD
Drain–Source Diode Forward
VGS = 0 V, IS = –0.62 A (Note 2)
–0.7
Voltage
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a.) 170°C/W when mounted on a 1 in2 pad of 2 oz. copper.
b.) 260°C/W when mounted on a minimum pad.
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDG330P Rev D (W)
Typical Characteristics
6
3
2.6
2.2
1.8
1.4
1
VGS=-4.5V
-3.0V
-2.5V
-2.0V
VGS=-1.5V
-1.8V
4.5
3
-1.8V
-2.0V
-1.5V
-2.5V
-3.0V
1.5
0
-4.5V
0.6
0
1.5
3
4.5
6
0
0.5
1
1.5
2
2.5
150
2
-ID, DRAIN CURRENT (A)
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.4
0.3
ID = -2.0A
GS = -4.5V
ID = -1A
1.3
1.2
1.1
1
V
0.25
0.2
TA = 125oC
0.15
0.9
0.8
0.7
0.1
TA = 25oC
0.05
-50
-25
0
25
50
75
100
125
1
2
3
4
5
TJ, JUNCTION TEMPERATURE (oC)
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
10
6
VGS = 0V
VDS = -5V
TA = -55oC
25oC
125oC
1
4.5
3
TA = 125oC
0.1
25oC
0.01
-55oC
1.5
0
0.001
0.0001
0.5
1
1.5
0
0.2
0.4
0.6
0.8
1
1.2
-VGS, GATE TO SOURCE VOLTAGE (V)
-VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDG330P Rev D (W)
Typical Characteristics
6
800
700
600
500
400
300
200
100
0
ID = -2A
VDS = -4V
f = 1 MHz
GS = 0 V
-6V
V
5
4
3
2
1
0
-8V
CISS
COSS
CRSS
0
2
4
6
8
0
2
4
6
8
10
12
Qg, GATE CHARGE (nC)
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
100
10
8
SINGLE PULSE
R
θJA = 260°C/W
10
1
RDS(ON) LIMIT
T
A = 25°C
100µs
1ms
10ms
6
100ms
1s
4
DC
VGS = -4.5V
0.1
0.01
SINGLE PULSE
R
θJA = 260oC/W
T
2
A = 25oC
0
0.01
0.1
1
10
100
0.1
1
10
100
-VDS, DRAIN-SOURCE VOLTAGE (V)
t1, TIME (sec)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
R
R
θJA(t) = r(t) * RθJA
θJA = 260oC/W
0.2
0.1
0.1
P(pk)
0.05
t1
0.02
t2
0.01
0.01
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
SINGLE PULSE
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDG330P Rev D (W)
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
â
SMART START™
STAR*POWER™
Stealth™
VCX™
FAST
ACEx™
Bottomless™
CoolFET™
OPTOLOGIC™
OPTOPLANAR™
PACMAN™
FASTr™
FRFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MicroPak™
MICROWIRE™
CROSSVOLT™
DenseTrench™
DOME™
POP™
Power247™
PowerTrenchâ
QFET™
EcoSPARK™
E2CMOSTM
TinyLogic™
QS™
EnSignaTM
TruTranslation™
UHC™
QT Optoelectronics™
Quiet Series™
SILENTSWITCHERâ
FACT™
FACT Quiet Series™
UltraFETâ
STAR*POWER is used under license
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support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
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Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
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product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. H4
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are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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