FDG410NZ [ONSEMI]
N 沟道，PowerTrench® MOSFET，20 V，2.2 A，70 mΩ;
| 型号： | FDG410NZ |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道，PowerTrench® MOSFET，20 V，2.2 A，70 mΩ 开关 光电二极管 晶体管 |
| 文件： | 总9页 (文件大小：389K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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March 2009
FDG410NZ
Single N-Channel PowerTrench® MOSFET
20 V, 2.2 A, 70 mΩ
Features
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using either
synchronous or conventional switching PWM controllers. It has
been optimized use in small switching regulaters, providing an
extremely low rDS(on) and gate charge (Qg) in a small package.
Max rDS(on) = 70 mΩ at VGS = 4.5 V, ID = 2.2 A
Max rDS(on) = 77 mΩ at VGS = 2.5 V, ID = 2.0 A
Max rDS(on) = 87 mΩ at VGS = 1.8 V, ID = 1.8 A
Max rDS(on) = 115 mΩ at VGS = 1.5 V, ID = 1.5 A
HBM ESD protection level > 2 kV (Note 3)
High performance trench technology for extremely low rDS(on)
High power and current handling capability
Fast switching speed
Applications
DC/DC converter
Power management
Load switch
Low gate charge
RoHS Compliant
S
D
D
D
6
5
1
D
D
D 2
G
D
D
3
4 S
G
SC70-6
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
Parameter
Ratings
20
Units
Drain to Source Voltage
Gate to Source Voltage
V
V
±8
-Continuous
-Pulsed
Power Dissipation
Power Dissipation
TA = 25 °C
(Note 1a)
2.2
ID
A
6.0
TA = 25 °C
TA = 25 °C
(Note 1a)
(Note 1b)
0.42
PD
W
0.38
TJ, TSTG
Operating and Storage Junction Temperature Range
-55 to +150
°C
Thermal Characteristics
RθJA
RθJA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
(Note 1a)
(Note 1b)
300
333
°C/W
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape Width
8 mm
Quantity
.41
FDG410NZ
SC70-6
7 ”
3000 units
©2009 Fairchild Semiconductor Corporation
FDG410NZ Rev.B
www.fairchildsemi.com
1
Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250 µA, VGS = 0 V
20
V
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
I
D = 250 µA, referenced to 25 °C
17
mV/°C
IDSS
IGSS
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
VDS = 16 V, VGS = 0 V
VGS = ±8 V, VDS = 0 V
1
µA
µA
±10
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250 µA
0.4
0.7
-3
1.0
V
∆VGS(th)
∆TJ
Gate to Source Threshold Voltage
Temperature Coefficient
I
D = 250 µA, referenced to 25 °C
GS = 4.5 V, ID = 2.2 A
mV/°C
V
50
56
67
83
70
77
VGS = 2.5 V, ID = 2.0 A
VGS = 1.8 V, ID = 1.8 A
VGS = 1.5 V, ID = 1.5 A
87
rDS(on)
Static Drain to Source On Resistance
Forward Transconductance
mΩ
115
VGS = 4.5 V, ID = 2.2 A,
TJ = 125 °C
71
11
100
gFS
VDD = 5 V, ID = 2.2 A
S
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
400
70
535
95
pF
pF
pF
Ω
VDS = 10 V, VGS = 0 V,
f = 1 MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
45
70
2.8
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
5.3
2.3
18
11
10
33
10
7.2
ns
ns
VDD = 10 V, ID = 2.2 A,
V
GS = 4.5 V, RGEN = 6 Ω
Turn-Off Delay Time
Fall Time
ns
2.3
5.1
0.6
1.0
ns
Qg
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
nC
nC
nC
VGS = 4.5 V, VDD = 10 V,
D = 2.2 A
Qgs
Qgd
I
Drain-Source Diode Characteristics
IS
Maximum Continuous Drain-Source Diode Forward Current
0.35
1.2
20
A
V
VSD
trr
Source to Drain Diode Forward Voltage
Reverse Recovery Time
VGS = 0 V, IS = 0.35 A (Note 2)
0.6
11
ns
nC
IF = 2.2 A, di/dt = 100 A/µs
Qrr
Reverse Recovery Charge
2.5
10
Notes:
2
1. R
is determined with the device mounted on a 1 in pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
is guaranteed by design while R is determined by
θJA
θJA
θJC
the user's board design.
b. 333 °C/W when mounted on a
minimum pad of 2 oz copper.
a. 300 °C/W when mounted
on a 1 in pad of 2 oz copper.
2
2. Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0%.
3: The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
©2009 Fairchild Semiconductor Corporation
FDG410NZ Rev.B
www.fairchildsemi.com
2
Typical Characteristics TJ = 25 °C unless otherwise noted
6
2.5
2.0
1.5
1.0
0.5
VGS = 4.5 V
VGS = 3.5 V
VGS = 2.5 V
5
4
3
2
1
0
VGS = 1.5 V
VGS = 1.8 V
VGS = 1.5 V
VGS = 1.8 V
VGS = 2.5 V
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
µs
VGS = 3.5 V
VGS = 4.5 V
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
0
0.2
VDS
0.4
0.6
0.8
1.0
1
2
3
4
5
6
,
DRAIN TO SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
Figure 1. On Region Characteristics
Figure2. N o r m a l i z e d O n - R e s i s ta n c e
vs Drain Current and Gate Voltage
1.6
1.4
1.2
1.0
0.8
0.6
180
ID = 2.2 A
GS = 4.5 V
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
V
160
140
120
100
80
ID = 1.1 A
TJ = 125 oC
TJ = 25 oC
60
40
1.0
-75 -50 -25
TJ
0
25 50 75 100 125 150
1.5
2.0
2.5
3.0
3.5
4.0
4.5
,
JUNCTION TEMPERATURE ( )
oC
VGS
, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On Resistance
vs Junction Temperature
Figure4. On-Resistance vs Gate to
Source Voltage
6
6
VGS = 0 V
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
5
4
3
2
1
0
VDS = 5 V
1
0.1
TJ = 125 oC
TJ = 25 o
C
TJ = 125 o
C
TJ = 25 o
C
TJ = -55 o
C
TJ = -55 oC
0.01
0.2
0.4
0.6
0.8
1.0
1.2
0.0
0.5
1.0
1.5
2.0
VSD, BODY DIODE FORWARD VOLTAGE (V)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure6. Source to Drain Diode
Forward Voltage vs Source Current
©2009 Fairchild Semiconductor Corporation
FDG410NZ Rev.B
www.fairchildsemi.com
3
Typical Characteristics TJ = 25 °C unless otherwise noted
5
1000
100
10
ID = 2.2 A
4
Ciss
VDD = 5 V
3
VDD = 10 V
VDD = 15 V
Coss
2
1
0
Crss
f = 1 MHz
= 0 V
V
GS
0.1
1
10
20
0
1
2
3
4
5
6
Q , GATE CHARGE (nC)
g
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics
Figure8. C a p a c i t a n c e v s D r a i n
to Source Voltage
10
105
103
101
10-1
10-3
10-5
VGS = 0 V
0.1 ms
1 ms
1
0.1
TJ = 125 oC
10 ms
THIS AREA IS
LIMITED BY r
TJ = 25 o
C
DS(on)
100 ms
SINGLE PULSE
J = MAX RATED
RθJA = 333 oC/W
T
10 s
1 s
DC
T
A = 25 oC
0.01
0
2
4
6
8
10
12
14
0.01
0.1
1
10
100
VGS, GATE TO SOURCE VOLTAGE (V)
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 9. Forward Bias Safe
Operating Area
Figure 10. Gate Leakage Current vs Gate to Source
Voltage
100
10
1
VGS = 4.5 V
SINGLE PULSE
RθJA = 333 oC/W
A = 25 oC
T
0.1
10-4
10-3
10-2
10-1
t, PULSE WIDTH (sec)
1
10
100
1000
Figure 11. Single Pulse Maximum Power Dissipation
©2009 Fairchild Semiconductor Corporation
FDG410NZ Rev.B
www.fairchildsemi.com
4
Typical Characteristics TJ = 25 °C unless otherwise noted
2
1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
P
0.1
DM
0.05
0.02
0.01
t
1
t
0.01
0.001
2
NOTES:
DUTY FACTOR: D = t /t
SINGLE PULSE
RθJA = 333 oC/W
1
2
PEAK T = P
J
x Z
x R
+ T
DM
θJA
θJA A
10-4
10-3
10-2
10-1
t, RECTANGULAR PULSE DURATION (sec)
1
10
100
1000
Figure 12. Junction-to-Ambient Transient Thermal Response Curve
©2009 Fairchild Semiconductor Corporation
FDG410NZ Rev.B
www.fairchildsemi.com
5
Dimensional Outline and Pad Layout
©2009 Fairchild Semiconductor Corporation
FDG410NZ Rev.B
www.fairchildsemi.com
6
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®
®
Auto-SPM™
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Green FPS™ e-Series™
Gmax™
PowerTrench
PowerXS™
The Power Franchise
®
®
SM
Programmable Active Droop™
®
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TinyBoost™
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Quiet Series™
RapidConfigure™
®
TinyLogic
Current Transfer Logic™
EcoSPARK
GTO™
IntelliMAX™
®
TINYOPTO™
TinyPower™
TinyPWM™
EfficentMax™
ISOPLANAR™
MegaBuck™
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™
EZSWITCH™ *
Saving our world, 1mW /W /kW at a time™
SmartMax™
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™*
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TRUECURRENT™*
µSerDes™
SMART START™
®
MicroPak™
SPM
®
MillerDrive™
MotionMax™
Motion-SPM™
STEALTH™
SuperFET™
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®*
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Definition of Terms
Datasheet Identification
Product Status
Definition
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Advance Information
Formative / In Design
Datasheet contains preliminary data; supplementary data will be published at a later
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First Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
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Full Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Not In Production
Rev. I40
7
©2009 Fairchild Semiconductor Corporation
FDG410NZ Rev.B
www.fairchildsemi.com
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
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