FDG8842CZ [ONSEMI]
互补，PowerTrench® MOSFET，30V/-25V;
| 型号： | FDG8842CZ |
| 厂家： | 
ONSEMI |
| 描述： | 互补，PowerTrench® MOSFET，30V/-25V 开关 光电二极管 晶体管 |
| 文件： | 总9页 (文件大小：568K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi
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liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,
regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
FDG8842CZ
Complementary PowerTrench® MOSFET
Q1:30V,0.75A,0.4Ω; Q2:–25V,–0.41A,1.1Ω
Features
General Description
Q1: N-Channel
These N & P-Channel logic level enhancement mode field
effect transistors are produced using ON Semiconductor’s
proprietary, high cell density, DMOS technology. This very
high density process is especially tailored to minimize
on-state resistance. This device has been designed
especially for low voltage applica-tions as a replacement for
bipolar digital transistors and small signal MOSFETs. Since
bias resistors are not required, this dual digital FET can replace
several different digital transistors, with different bias resistor
values.
Max rDS(on) = 0.4Ω at VGS = 4.5V, ID = 0.75A
Max rDS(on) = 0.5Ω at VGS = 2.7V, ID = 0.67A
Q2: P-Channel
Max rDS(on) = 1.1Ω at VGS = –4.5V, ID = –0.41A
Max rDS(on) = 1.5Ω at VGS = –2.7V, ID = –0.25A
Very low level gate drive requirements allowing direct
operation in 3V circuits(VGS(th) <1.5V)
Very small package outline SC70-6
RoHS Compliant
S2
G2
D1
Q1
D1
S1
G1
D2
G2
S2
D2
G1
Q2
S1
SC70-6
Pin 1
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDS
VGS
Parameter
Q1
30
Q2
Units
Drain to Source Voltage
Gate to Source Voltage
–25
–8
V
V
±12
0.75
2.2
Drain Current
-Continuous
-Pulsed
–0.41
–1.2
ID
A
0.36
0.30
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
PD
W
TJ, TSTG
Operating and Storage Junction Temperature Range
–55 to +150
°C
Thermal Characteristics
RθJA
RθJA
Thermal Resistance, Junction to Ambient Single operation
Thermal Resistance, Junction to Ambient Single operation
(Note 1a)
(Note 1b)
350
415
°C/W
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape Width
8mm
Quantity
.42
FDG8842CZ
7”
3000 units
1
©2007 Semiconductor Components Industries, LLC.
October-2017, Rev.2
Publication Order Number:
FDG8842CZ/D
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Type
Min
Typ
Max
Units
Off Characteristics
Drain to Source Breakdown
Voltage
ID = 250μA, VGS = 0V
ID = –250μA, VGS = 0V
Q1
Q2
30
–25
BVDSS
V
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient
ID = 250μA, referenced to 25°C
Q1
Q2
25
–21
mV/°C
μA
I
D = –250μA, referenced to 25°C
V
DS = 24V, VGS = 0V
Q1
Q2
1
–1
IDSS
IGSS
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
VDS = –20V, VGS = 0V
VGS = ±12V, VDS= 0V
VGS = –8V, VDS= 0V
Q1
Q2
±10
–100
μA
nA
On Characteristics
V
GS = VDS, ID = 250μA
Q1
Q2
0.65
–0.65 –0.8
1.0
1.5
–1.5
VGS(th)
Gate to Source Threshold Voltage
V
VGS = VDS, ID = –250μA
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage ID = 250μA, referenced to 25°C
Q1
Q2
–3.0
1.8
mV/°C
Temperature Coefficient
ID = –250μA, referenced to 25°C
V
V
GS = 4.5V, ID = 0.75A
GS = 2.7V, ID = 0.67A
0.25
0.29
0.36
0.4
0.5
0.6
Q1
Q2
VGS = 4.5V, ID = 0.75A ,TJ = 125°C
Static Drain to Source On
Resistance
rDS(on)
Ω
VGS = –4.5V, ID = –0.41A
VGS = –2.7V, ID = –0.25A
VGS = –4.5V, ID = –0.41A ,TJ = 125°C
0.87
1.20
1.22
1.1
1.5
1.9
VDS = 5V, ID = 0.75A
Q1
Q2
3
8
gFS
Forward Transconductance
S
V
DS = –5V, ID = –0.41A
Dynamic Characteristics
Q1
Q2
90
70
120
100
Q1
Ciss
Coss
Crss
Input Capacitance
pF
pF
pF
VDS = 10V, VGS = 0V, f= 1MHZ
Q2
VDS = –10V, VGS = 0V, f= 1MHZ
Q1
Q2
20
30
30
40
Output Capacitance
Q1
Q2
15
15
25
25
Reverse Transfer Capacitance
Switching Characteristics (note 2)
Q1
Q2
4
6
10
12
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
ns
ns
Q1
VDD = 5V, ID = 0.5A,
Q1
Q2
1
16
10
29
V
GS = 4.5V,RGEN = 6Ω
Q2
Q1
Q2
9
35
18
56
VDD = –5V, ID = –0.5A,
Turn-Off Delay Time
Fall Time
ns
V
GS = –4.5V,RGEN = 6Ω
Q1
Q2
1
40
10
64
ns
Q1
Q2
1.03
1.20
1.44
1.68
Qg
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
nC
nC
nC
Q1
VGS =4.5V, VDD = 5V, ID = 0.75A
Q2
VGS = –4.5V, VDD = –5V, ID = –0.41A
Q1
Q2
0.29
0.31
Qgs
Qgd
Q1
Q2
0.17
0.22
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2
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Type
Min
Typ
Max
Units
Drain-Source Diode Characteristics and Maximum Ratings
Q1
Q2
0.3
–0.3
IS
Maximum Continuous Drain-Source Diode Forward Current
A
V
VGS = 0V, IS = 0.3A
(Note 2)
(Note 2)
Q1
Q2
0.76
–0.84
1.2
–1.2
VSD
Source to Drain Diode Forward Voltage
V
GS = 0V, IS = –0.3A
Notes:
1. R
R
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
θJA
θJC
is guaranteed by design while R
is determined by the user's board design.
θJA
a. 350°C/W when mounted on a
1 in pad of 2 oz copper .
b. 415°C/W when mounted on a minimum pad
of 2 oz copper.
2
Scale 1:1 on letter size paper.
2. Pulse Test: Pulse Width < 300μs, Duty cycle < 2.0%.
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3
Typical Characteristics (Q1 N-Channel)TJ = 25°C unless otherwise noted
2.20
1.76
1.32
0.88
0.44
0.00
2.6
2.2
1.8
1.4
1.0
0.6
VGS = 4.5V
VGS = 2.7V
VGS = 1.8V
VGS = 2.0V
VGS =1.8V
VGS = 2.0V
VGS = 3.5V
VGS = 4.5V
VGS = 2.7V
PULSE DURATION = 80μs
DUTY CYCLE = 0.5%MAX
VGS = 1.5V
PULSE DURATION = 80μs
DUTY CYCLE = 0.5%MAX
0.0
0.5
1.0
1.5
2.0
0.00
0.44
0.88
1.32
1.76
2.20
VDS, DRAIN TO SOURCE VOLTAGE (V)
ID, DRAIN CURRENT(A)
Figure 1. On-Region Characteristics
Figure2. N o r m a l i z e d O n - R e s i s ta n c e
vs Drain Current and Gate Voltage
0.8
1.6
PULSE DURATION = 80μs
DUTY CYCLE = 0.5%MAX
ID =0.38A
ID = 0.75A
VGS = 4.5V
1.4
1.2
1.0
0.8
0.6
0.6
0.4
0.2
TJ = 125oC
TJ = 25oC
1
2
3
4
5
-50 -25
0
25
50
75
100 125 150
TJ, JUNCTION TEMPERATURE (oC)
VGS, GATE TO SOURCE VOLTAGE (V)
Fi gu re 3. Nor mal ize d O n - Resi sta nce
vs Junction Temperature
Figure4. On-Resistance vs Gate to
Source Voltage
2.20
2
1
VGS = 0V
PULSE DURATION = 80μs
DUTY CYCLE = 0.5%MAX
1.76
1.32
0.88
0.44
0.00
VDD = 5V
TJ = 150oC
0.1
0.01
TJ = 25oC
T = 150oC
J
T
= 25oC
J
TJ = -55oC
T
J
= -55oC
2.0
0.001
0.0
0.5
1.0
1.5
2.5
0.2
0.4
0.6
0.8
1.0
1.2
VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure6. Source to Drain Diode
Forward Voltage vs Source Current
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4
Typical Characteristics (Q1 N-Channel)TJ = 25°C unless otherwise noted
5
4
3
2
1
0
200
100
Ciss
ID = 0.22A
Coss
V
= 10V
DD
V
= 5V
DD
10
1
Crss
V
= 15V
DD
f = 1MHz
= 0V
V
GS
30
0.1
1
10
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
VDS, DRAIN TO SOURCE VOLTAGE (V)
Q , GATE CHARGE(nC)
g
Figure 7. Gate Charge Characteristics
Figure8. C a p a c i t a n c e v s D r a i n
to Source Voltage
50
10
4
SINGLE PULSE
RθJA= 415OC/W
TA = 25OC
100μs
1
1ms
10ms
0.1
1
SINGLE PULSE
TJ = MAX RATED
100ms
RθJA = 415OC/W
TA = 25OC
1s
0.01
DC
0.1
0.005
0.0001 0.001 0.01
0.1
1
10
100 1000
0.1
1
10
100
t, PULSE WIDTH (s)
V , DRAIN to SOURCE VOLTAGE (V)
DS
Figure9. Forward Bias Safe
Operating Area
Figure 10. Single Pulse Maximum Power
Dissipation
1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
P
DM
0.05
0.02
0.01
0.1
t
1
t
2
NOTES:
DUTY FACTOR: D = t /t
1
2
PEAK T = P
J
x Z
x R
+ T
DM
θJA
θJA A
o
RθJA = 415 C/W
SINGLE PULSE
0.01
0.0001
0.001
0.01
0.1
1
10
100
1000
t, RECTANGULAR PULSE DURATION (s)
Figure 11. Transient Thermal Response Curve
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5
Typical Characteristics (Q2 P-Channel)TJ = 25°C unless otherwise noted
1.2
0.9
0.6
0.3
0.0
5
4
3
2
1
0
VGS = -3.5V
PULSE DURATION = 80μs
DUTY CYCLE = 0.5%MAX
VGS = -4.5V
VGS = -1.5V
VGS = -2.0V
VGS = -2.7V
VGS = -2.5V
VGS = -2.5V
VGS = -2.7V
VGS = -2.0V
VGS = -3.5V
VGS = -4.5V
PULSE DURATION = 80μs
DUTY CYCLE = 0.5%MAX
VGS = -1.5V
0
1
2
3
4
0.0
0.3
0.6
-ID, DRAIN CURRENT(A)
0.9
1.2
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 13. On Region Characteristics
Figure 14. Normalized on-Resistance vs Drain
Current and Gate Voltage
1.6
4
PULSE DURATION = 80μs
DUTY CYCLE = 0.5%MAX
ID = -0.41A
VGS = -4.5V
ID =-0.22A
1.4
1.2
1.0
0.8
0.6
3
2
1
0
TJ = 125oC
TJ = 25oC
-50 -25
0
25
50
75
100 125 150
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
TJ, JUNCTION TEMPERATURE (oC)
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 16. On-Resistance vs Gate to
Source Voltage
Figure 15. Normalized On Resistance
vs Junction Temperature
0.6
3
1
PULSE DURATION = 80μs
DUTY CYCLE = 0.5%MAX
VGS = 0V
TJ = -55oC
VDS = -5V
TJ = 150oC
TJ = 25oC
0.4
0.2
0.0
TJ = 150oC
0.1
0.01
TJ = 25oC
TJ = -55oC
0.001
0.5
1.0
1.5
2.0
2.5
0.2
0.4
0.6
0.8
1.0
1.2
-VGS, GATE TO SOURCE VOLTAGE (V)
-VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 17. Transfer Characteristics
Figure 18. Source to Drain Diode
Forward Voltage vs Source Current
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6
Typical Characteristics(Q2 P-Channel) TJ = 25°C unless otherwise noted
5
4
3
2
1
0
200
100
ID = -0.41A
Ciss
VDD = -5V
VDD = -10V
Coss
10
1
VDD = -15V
Crss
f = 1MHz
= 0V
V
GS
25
0.1
1
10
0.0
0.4
0.8
Q , GATE CHARGE(nC)
1.2
1.6
-VDS, DRAIN TO SOURCE VOLTAGE (V)
g
Figure 20. Capacitance vs Drain
to Source Voltage
Figure 19. Gate Charge Characteristics
3
1
20
10
SINGLE PULSE
θJA= 415OC/W
TA = 25OC
R
1ms
10ms
1
0.1
SINGLE PULSE
J = MAX RATED
θJA = 415oC/W
T
100ms
R
TA = 25oC
1s
DC
0.01
0.1
0.001
50
1
10
0.01
0.1
1
10
100
1000
0.3
t, PULSE WIDTH (s)
-VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 21. Forward Bias Safe
Operating Area
Figure 22. Single Pulse Maximum Power
Dissipation
1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
P
DM
0.05
0.02
0.01
t
1
0.1
t
2
NOTES:
DUTY FACTOR: D = t /t
1
2
PEAK T = P
x Z
x R
+ T
J
DM
θJA
θJA A
RθJA = 415oC/W
SINGLE PULSE
0.01
10-3
10-2
10-1
100
t, RECTANGULAR PULSE DURATION (s)
101
102
103
Figure 23. Transient Thermal Response Curve
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ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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