FDLL3595 [ONSEMI]
高导通,快速二极管;型号: | FDLL3595 |
厂家: | ONSEMI |
描述: | 高导通,快速二极管 二极管 |
文件: | 总5页 (文件大小:178K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DATA SHEET
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High Conductance, Low
Leakage Diode
Cathode Band
FDLL3595
Description
MiniMELF/SOD−80
A general purpose diode that couples high forward conductance fast
switching speed and high blocking voltages in a glass leadless LL−34
surface mount package. Placement of the expansion gap has no
relationship to the location of the cathode terminal which is indicated
by the first color band.
CASE 100AD
MARKING DIAGRAM
COLOR BAND MARKING
Features
st
1
BAND
DEVICE
• This is a Pb−Free and Halide Free Device
WHITE
FDLL3595
st
−1 band denotes cathode terminal and has wider width
ABSOLUTE MAXIMUM RATINGS
(Values are at T = 25°C unless otherwise noted.)
A
Symbol
Parameter
Working Inverse Voltage
Value
125
200
500
600
1.0
Unit
V
W
IV
ORDERING INFORMATION
I
O
Average Rectified Forward Current
DC Forward Current
mA
mA
mA
A
I
F
†
Device
FDLL3595
Package
Shipping
i
F
Recurrent Peak Forward Current
I
Non−Repetitive Pulse Width = 1.0 s
MiniMELF/SOD−80
2500 /
FSM
Peak Forward
Current
(Pb−Free/Halide Free) Tape & Reel
Pulse Width = 1.0 ms
4.0
T
Storage Temperature Range
−65 to +200
−65 to +200
°C
°C
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
STG
T
J
Operating Junction Temperature
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Symbol
Parameter
Power Dissipation
Value
500
Unit
mW
P
D
Linear Derating Factor from T = 25°C
3.33
350
mW/°C
°C/W
A
R
Thermal Resistance,
Junction to Ambient
q
JA
© Semiconductor Components Industries, LLC, 2000
1
Publication Order Number:
June, 2023 − Rev. 2
FDLL3595/D
FDLL3595
ELECTRICAL CHARACTERISTICS (Values are at T = 25°C unless otherwise noted.)
A
Symbol
Parameter
Breakdown Voltage
Test Conditions
Min
150
520
600
650
750
790
0.83
−
Max
−
Unit
V
V
R
IR = 100 mA
I = 1.0 mA
V
F
Forward Voltage
680
750
800
880
920
1.0
1.0
300
500
3.0
8.0
3.0
mV
F
I = 5.0 mA
F
I = 10 mA
F
I = 50 mA
F
I = 100 mA
F
I = 200 mA
F
V
I
R
Reverse Leakage
V
R
V
R
V
R
V
R
V
R
= 125 V
nA
nA
nA
mA
pF
ms
= 30 V, T = 125°C
−
A
= 125 V, T = 125°C
−
A
= 180 V, T = 150°C
−
A
C
Total Capacitance
= 0, f = 1.0 MHz
−
T
t
rr
Reverse Recovery Time
I = 10 mA V = 3.5 V R = 1.0 kW
−
F
R
L
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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2
FDLL3595
TYPICAL CHARACTERISTICS
8
6
4
2
100
10
Heat−Sink mounting, TC
4”x4”x0.15”Copper Plate
1
T = 25 °C
Pulse Width = 30 ms
1% Duty Cycle
Mounted on PC Board,
TA 0.5” (12.7 mm) Lead
Length 60 Hz Resistive
of Inductive Load
A
0
0.01
0
50
100
150
0.7
0.8
0.9
1
1.1
1.2
1.3
1.4
Ambient Temperature (5C)
Figure 1. Forward Current Derating Curve
Forward Voltage (V)
Figure 2. Forward Characteristics
10
200
160
120
80
T
C
= 100°C
1
T = 105°C
A
0.1
T = 25°C
A
40
0.01
0
0
20
40
60
80
100
120
140
10
20
100
1
2
5
50
Number of Cycles At 60Hz
Percent Of Rated Peak Reverse Voltage (%)
Figure 3. Reverse Characteristics
Figure 4. Non−Repetitive Surge Current
400
100
50
T = 25 °C
A
f = 1.0 MHz
V
= 50 m Vp−p
isg
10
2
5
10
50
100
Reverse Voltage (V)
Figure 5. Junction Capacitance
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3
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
MiniMELF / SOD−80
CASE 100AD
ISSUE O
DATE 30 APR 2012
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON79582E
MINIMELF / SOD−80
PAGE 1 OF 1
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