FDMA037N08LC [ONSEMI]
N 沟道，PowerTrench® MOSFET，80 V，4 A，36.5 mΩ;
| 型号： | FDMA037N08LC |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道，PowerTrench® MOSFET，80 V，4 A，36.5 mΩ |
| 文件： | 总8页 (文件大小：437K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
MOSFET – Single, N-Channel,
POWERTRENCH)
V
R
MAX
I
D MAX
DS
DS(on)
80 V
6 A
36.5 mW @ 10 V
80 V, 6 A, 36.5 mW
Single N−Channel
Bottom Drain Contact
FDMA037N08LC
D
D
1
6
Description
2
3
5
4
D
G
D
S
This device has been designed to provide maximum efficiency and
thermal performance for synchronous buck converters. The low
R
DS(on)
and gate charge provide excellent switching performance.
Features
PTNG MOSFET Technology
Max R
Max R
= 36.5 mW at V = 10 V, I = 4 A
DS(on)
GS D
= 56.9 mW at V = 4.5 V, I = 3 A
DS(on)
GS
D
5 V Drive Capable
50% Lower Q than Other MOSFET Suppliers
rr
Lower Switching Noise/EMI
Low Profile − 0.8 mm Maximum in the New Package MicroFETt
2x2 mm
WDFN6 2x2, 0.65P
CASE 511DB
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MARKING DIAGRAM
Typical Applications
DC−DC Buck Converters
&Z&2&K
037L
&Z
&2
&K
= Assembly Plant Code
= Numeric Date Code
= Lot Code
037L
= Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
Semiconductor Components Industries, LLC, 2017
1
Publication Order Number:
April, 2023 − Rev. 3
FDMA037N08LC/D
FDMA037N08LC
MOSFET MAXIMUM RATINGS (T = 25C, Unless otherwise specified)
A
Symbol
Parameter
Ratings
Unit
V
V
DS
V
GS
Drain to Source Voltage
Gate to Source Voltage
Continuous
80
20
V
I
D
TA = 25C (Note 1a)
6
55
A
Pulsed
P
D
Power Dissipation
Power Dissipation
TA = 25C (Note 1a)
TA = 25C (Note 1b)
2.4
W
0.9
T , T
Operating and Storage Junction Temperature Range
−55 to +150
C
J
STG
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Symbol
Parameter
Thermal Resistance, Junction to Ambient (Note 1a)
Thermal Resistance, Junction to Ambient (Note 1b)
Ratings
52
Unit
C/W
R
q
JA
R
145
q
JA
PACKAGE MARKING AND ORDERING INFORMATION
†
Device Marking
Device
Package
Reel Size
Tape Width
Shipping (Qty / Packing)
037L
FDMA037N08LC
WDFN6 2x2, 0.65P
(MicroFET)
(Pb−Free/Halogen Free)
7
8 mm
3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted)
J
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
BV
Drain to Source Breakdown Voltage
I
I
= 250 mA, V = 0 V
80
−
−
−
V
DSS
D
GS
Breakdown Voltage
Temperature Coefficient
= 250 mA, referenced to 25C
−
69
mV/C
DBVDSS
DTJ
D
I
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
V
V
= 64 V, V = 0 V
−
−
−
−
−1
1
mA
mA
DSS
GSS
DS
GS
I
= 20 V, V = 0 V
DS
GS
ON CHARACTERISTICS
V
Gate to Source Threshold Voltage
V
I
= V , I = 20 mA
1.0
1.3
2.5
V
GS(th)
GS
DS
D
Gate to Source Threshold Voltage
Temperature Coefficient
= 20 mA, referenced to 25C
−
−5
−
mV/C
DVGS(th)
DTJ
D
R
Static Drain to Source On Resistance
Forward Transconductance
V
GS
V
GS
V
GS
V
DD
= 10 V, I = 4 A
−
−
−
−
30.9
42.1
51.4
15
36.5
56.9
61
mW
DS(on)
D
= 4.5 V, I = 3 A
D
= 10 V, I = 4 A, T = 125C
D
J
g
FS
= 5 V, I = 4 A
−
S
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
DS
= 40 V, V = 0 V, f = 1 MHz
−
−
−
425
110
6.0
595
155
8.3
pF
pF
pF
iss
GS
C
Output Capacitance
oss
C
Reverse Transfer Capacitance
rss
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2
FDMA037N08LC
ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted)
J
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
SWITCHING CHARACTERISTICS
t
t
Turn−on Delay Time
Rise Time
V
= 40 V, I = 4 A, VGS = 10 V,
GEN
−
−
−
−
−
−
−
−
−
−
4.9
1.3
14
10
10
24
10
9.0
4.5
−
ns
d(on)
DD
D
R
= 6 W
t
r
Turn−off Delay Time
Fall Time
d(off)
t
f
1.7
6.5
3.2
0.9
0.9
6.4
5.9
Q
Q
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain ”Miller” Charge
Output Charge
V
GS
V
GS
V
DD
V
DD
V
DD
V
DS
= 0V to 10 V, V = 40 V, I = 4 A
nC
nC
nC
nC
nC
nC
g
g
DD
D
= 0V to 4.5 V, V = 40 V, I = 4 A
DD
D
Q
= 40 V, I = 4 A
D
gs
gd
Q
= 40 V, I = 4 A
−
D
Q
= 40 V, V = 0 V
−
oss
GS
Q
Total Gate Charge Sync
= 0 V, I = 4 A
−
sync
D
DRAIN−SOURCE DIODE CHARACTERISTICS
V
Source to Drain Diode Forward Voltage
V
V
= 0 V, I = 2 A (Note 2)
−
−
−
−
−
−
0.8
0.8
10
9
1.2
1.3
20
14
16
51
V
V
SD
GS
S
= 0 V, I = 4 A (Note 2)
GS
S
t
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Time
Reverse Recovery Charge
I = 2 A, di/dt = 300 A/ms
F
ns
nC
ns
nC
rr
Q
rr
t
I = 2 A, di/dt = 1000 A/ms
F
8
rr
Q
26
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
NOTES:
2
1. R
is determined with the device mounted on a 1 in pad 2 oz copper pad on a 1.5 1.5 in. board of FR−4 material. R
is guaranteed
JC
q
q
JA
by design while RJA is determined by the user’s board design.
a) 52C/W when mounted on
b) 145C/W when mounted on
a minimum pad of 2 oz copper.
2
a 1 in pad of 2 oz copper.
2. Pulse Test: Pulse Width < 300 ms, Duty cycle < 2.0%.
3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
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3
FDMA037N08LC
TYPICAL CHARACTERISTICS (T = 25C UNLESS OTHERWISE NOTED)
J
5
40
30
20
10
0
VGS = 10 V
V
GS = 2.5 V
VGS = 6 V
V
GS = 3 V
4
3
2
VGS = 3.5 V
VGS = 4.5 V
V
GS = 4.5 V
V
GS = 3.5 V
VGS = 6 V
V
GS = 3 V
1
0
VGS = 10 V
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
VGS = 2.5 V
0
10
20
30
40
0
1
2
3
4
5
D , DRAIN CURRENT (A)
I
, DRAIN TO SOURCE VOLTAGE (V)
VDS
Figure 1. On Region Characteristics
Figure 2. Normalized On−Resistance
vs. Drain Current and Gate Voltage
400
300
200
100
0
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
PULSE DURATION = 80ms
DUTY CYCLE = 0.5% MAX
ID = 4 A
VGS = 10 V
ID = 4 A
TJ = 125 o
C
TJ = 25 o
C
2
3
4
5
6
7
8
9
10
−75 −50 −25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
V
GS, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On Resistance
vs. Junction Temperature
Figure 4. On-Resistance
vs. Gate to Source Voltage
40
30
20
10
0
40
10
PULSE DURATION = 80ms
DUTY CYCLE = 0.5% MAX
VDS = 5 V
VGS = 0 V
1
0.1
TJ = 150 o
C
TJ = 25 o
C
TJ = 150 o
C
0.01
TJ = −55oC
TJ = 25 o
C
T
J = −55oC
0.001
1
2
3
4
5
6
0.0
0.3
0.6
0.9
1.2
1.5
VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode
Forward Voltage vs. Source Current
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4
FDMA037N08LC
TYPICAL CHARACTERISTICS (CONTINUED)
10
8
1000
Ciss
ID = 4 A
VDD = 30 V
100
10
1
Coss
6
V
DD = 40 V
4
VDD = 50 V
Crss
2
f = 1 MHz
GS = 0 V
V
0
0
1
2
3
4
5
6
7
0.1
1
10
80
Qg, GATE CHARGE (nC)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance
vs. Drain to Source Voltage
100
10
30
10
10 ms
100 ms
1
TJ = 25 o
C
1 ms
10 ms
100 ms
1 s
10 s
DC
THIS AREA IS
LIMITED BY RDS(on)
TJ = 100 o
C
0.1
SINGLE PULSE
TJ = MAX RATED
0.01
R
qJA = 145oC/W
TJ = 125 o
C
CURVE BENT TO
MEASURED DATA
T
A = 25 oC
0.001
1
0.1
1
10
100 300
0.001
0.01
0.1
1
tAV, TIME IN AVALANCHE (ms)
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 9. Unclamped Inductive
Switching Capability
Figure 10. Forward Bias Safe Operating Area
10000
SINGLE PULSE
qJA = 145 oC/W
A = 25 o
R
1000
100
10
T
C
1
0.1
10−6
10−5
10−4
10−3
10−2
10−1
11
0
100
1000
t, PULSE WIDTH (sec)
Figure 11. Single Pulse Maximum Power Dissipation
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5
FDMA037N08LC
TYPICAL CHARACTERISTICS (CONTINUED)
2
1
DUTY CYCLE−DESCENDING ORDER
D = 0.5
0.2
0.1
0.1
0.01
P
DM
0.05
0.02
0.01
t
1
t
2
0.001
NOTES:
Z
R
(t) = r(t) x R
o
qJA
qJA
SINGLE PULSE
= 145 C/W
qJA
0.0001
Peak T = P
x Z (t) + T
J
DM
qJA A
Duty Cycle, D = t / t
1
2
0.00001
10−6
10−5
10−4
10−3
t, RECTANGULAR PULSE DURATION (sec)
10−2
10−1
11
100
0
1000
Figure 12. Junction−to−Case Transient Thermal Response Curve
POWERTRENCH is registered trademark and MicroFET is a trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
subsidiaries in the United States and/or other countries.
www.onsemi.com
6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
WDFN6 2x2, 0.65P
CASE 511DB
ISSUE O
DATE 31 AUG 2016
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13617G
WDFN6 2X2, 0.65P
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
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the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
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© Semiconductor Components Industries, LLC, 2019
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, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
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A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
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