FDMA410NZ [ONSEMI]
N 沟道，PowerTrench® MOSFET，1.5 V 指定，20V，9.5A，23mΩ;
| 型号： | FDMA410NZ |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道，PowerTrench® MOSFET，1.5 V 指定，20V，9.5A，23mΩ PC 光电二极管 晶体管 |
| 文件： | 总8页 (文件大小：258K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
MOSFET – Single, N-Channel,
POWERTRENCH),
1.5 V Specified
V
R
MAX
I MAX
D
DS
DS(on)
20 V
23 mW @ 4.5 V
29 mW @ 2.5 V
36 mW @ 1.8 V
50 mW @ 1.5 V
9.5 A
20 V, 9.5 A, 23 mW
FDMA410NZ
Pin 1
Drain
D
D
G
Source
General Description
This Single N−Channel MOSFET has been designed using
onsemi’s advanced POWERTRENCH process to optimize
the R
@ V = 1.5 V on special MicroFETt leadframe.
DS(on)
GS
D
D
S
Features
• Max R
• Max R
• Max R
• Max R
Bottom
= 23 mW at V = 4.5 V, I = 9.5 A
DS(on)
DS(on)
DS(on)
DS(on)
GS
D
= 29 mW at V = 2.5 V, I = 8.0 A
GS
D
WDFN6 2x2, 0.65P
(MicroFET 2x2)
CASE 511CZ
= 36 mW at V = 1.8 V, I = 4.0 A
GS
D
= 50 mW at V = 1.5 V, I = 2.0 A
GS
D
• HBM ESD Protection Level > 2.5 kV (Note 3)
• Low Profile − 0.8 mm Maximum in the New Package MicroFET
2x2 mm
MARKING DIAGRAM
• Free from Halogenated Compounds and Antimony Oxides
• This Device is Pb−Free, Halide Free and is RoHS Compliant
&Z&2&K
410
Applications
• Li−lon Battery Pack
• Baseband Switch
• Load Switch
&Z = Assembly Plant Code
&2 = 2−Digit Date Code
&K = 2−Digits Lot Run Traceability Code
410 = Specific Device Code
• DC−DC Conversion
PIN ASSIGNMENT
ABSOLUTE MAXIMUM RATINGS (T = 25°C, unless otherwise noted)
A
Symbol
Parameter
Drain to Source Voltage
Gate to Source Voltage
Ratings
Unit
V
Bottom Drain Contact
V
20
8
DS
GS
D
D
G
1
2
3
6
5
4
D
D
S
V
V
I
D
Drain Current
− Continuous (Note 1a)
− Pulsed
A
T = 25°C
A
9.5
24
P
D
Power Dissipation
− (Note 1a)
− (Note 1b)
W
T = 25°C
2.4
0.9
A
T = 25°C
A
T , T
Operating and Storage Junction
Temperature Range
−55 to +150
°C
J
STG
ORDERING INFORMATION
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
†
Device
Package
Shipping
FDMA410NZ
WDFN6
(Pb−Free,
Halide Free)
3000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2009
1
Publication Order Number:
April, 2023 − Rev. 2
FDMA410NZ/D
FDMA410NZ
THERMAL CHARACTERISTICS
Symbol
Parameter
Ratings
52
Unit
Thermal Resistance, Junction to Ambient (Note 1a)
Thermal Resistance, Junction to Ambient (Note 1b)
°C/W
R
R
q
q
JA
JA
145
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Symbol
Parameter
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
BV
Drain to Source Breakdown Voltage
I
I
= 250 mA, V = 0 V
20
−
−
−
V
DSS
D
GS
Breakdown Voltage Temperature
Coefficient
= 250 mA, referenced to 25°C
−
17
mV/°C
DBVDSS
DTJ
D
I
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
V
V
= 16 V, V = 0 V
−
−
−
−
1
mA
mA
DSS
GSS
DS
GS
I
=
8 V, V = 0 V
10
GS
DS
ON CHARACTERISTICS
V
Gate to Source Threshold Voltage
V
I
= V , I = 250 mA
0.4
0.7
1.0
V
GS(th)
GS
DS D
Gate to Source Threshold Voltage
Temperature Coefficient
= 250 mA, referenced to 25°C
−
−3
−
mV/°C
DVGS(th)
DTJ
D
R
Static Drain to Source On Resistance
V
GS
V
GS
V
GS
V
GS
V
GS
V
DD
= 4.5 V, I = 9.5 A
−
−
−
−
−
−
17
20
24
29
23
35
23
29
36
50
32
−
mW
DS(on)
D
= 2.5 V, I = 8.0 A
D
= 1.8 V, I = 4.0 A
D
= 1.5 V, I = 2.0 A
D
= 4.5 V, I = 9.5 A, T = 125°C
D
J
g
FS
Forward Transconductance
= 5 V, I = 9.5 A
S
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
= 10 V, V = 0 V, f = 1 MHz
−
−
−
−
815
130
85
1080
175
130
−
pF
pF
pF
W
iss
DS
GS
C
oss
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
C
rss
R
f = 1 MHz
2.1
g
SWITCHING CHARACTERISTICS
t
Turn−On Delay Time
Rise Time
V
= 10 V, I = 9.5 A, V = 4.5 V,
GEN
−
−
−
−
−
−
−
7.5
3.9
27
15
10
44
10
14
−
ns
ns
d(on)
DD
D
GS
R
= 6 W
t
r
t
Turn−Off Delay Time
Fall Time
ns
d(off)
t
f
3.7
10
ns
Q
g
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
V
DD
= 10 V, I = 9.5 A, V = 4.5 V
nC
nC
nC
D
GS
Q
1.2
2.0
gs
gd
Q
−
DRAIN−SOURCE DIODE CHARACTERISTICS
Maximum Continuous Drain−Source Diode Forward Current
I
S
−
−
−
−
−
2.0
1.2
22
A
V
V
Source to Drain Diode Forward Voltage
Reverse Recovery Time
V
= 0 V, I = 2.0 A (Note 2)
0.7
12
2.6
SD
GS
S
t
I = 9.5 A, di/dt = 100 A/ms
F
ns
nC
rr
Q
rr
Reverse Recovery Charge
10
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
www.onsemi.com
2
FDMA410NZ
NOTES:
1. R
2
is determined with the device mounted on a 1 in pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR−4 material. R
is guaranteed
q
q
JC
JA
by design while R
is determined by the user’s board design.
q
JA
a. 52°C/W when mounted
b. 145°C/W when mounted
on a minimum pad of 2 oz copper
2
on a 1 in pad of 2 oz copper
2. Pulse Test: Pulse Width < 300 ms, Duty cycle < 2.0%.
3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
www.onsemi.com
3
FDMA410NZ
TYPICAL CHARACTERISTICS
(T = 25°C unless otherwise noted)
J
4.0
24
20
16
12
8
V
= 4.5 V
GS
V
GS
= 1.2 V
PULSE DURATION = 80 ms
3.5
3.0
2.5
2.0
1.5
1.0
0.5
V
= 3.5 V
= 2.5 V
= 1.8 V
GS
GS
DUTY CYCLE = 0.5% MAX
V
V
GS
V
GS
= 1.5 V
V
V
= 1.5 V
= 1.2 V
GS
V
GS
= 1.8 V
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
V
GS
= 2.5 V
GS
4
V
8
= 3.5 V
V
= 4.5 V
20
GS
GS
0
0.0
0.5
1.0
1.5
2.0
0
4
12
16
24
V
DS
, Drain to Source Voltage (V)
I , Drain Current (A)
D
Figure 1. On−Region Characteristics
Figure 2. Normalized On−Resistance vs. Drain
Current and Gate Voltage
60
50
40
30
20
1.6
1.4
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
I
D
= 4.75 A
I
V
= 9.5 A
D
= 4.5 V
GS
1.2
1.0
T = 125°C
J
0.8
0.6
T = 25°C
J
10
4.5
−75 −50 −25
0
25
50
75 100 125 150
1.0
1.5
2.0
2.5
3.0
3.5
4.0
T , Junction Temperature (5C)
J
V
GS
, Gate to Source Voltage (V)
Figure 3. Normalized On−Resistance
Figure 4. On−Resistance vs. Gate to Source
vs. Junction Temperature
Voltage
24
30
10
V
GS
= 0 V
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
20
16
12
V
DS
= 5 V
T = 125°C
J
1
T = 25°C
J
0.1
T = 125°C
J
8
4
0
T = −55°C
J
T = 25°C
J
0.01
T = −55°C
J
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0.0
0.5
1.0
1.5
2.0
V
SD
, Body Diode Forward Voltage (V)
V
GS
, Gate to Source Voltage (V)
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode Forward Voltage
vs. Source Current
www.onsemi.com
4
FDMA410NZ
TYPICAL CHARACTERISTICS (continued)
(T = 25°C unless otherwise noted)
J
5
4
2000
1000
I
D
= 9.5 A
C
C
iss
3
2
1
0
V
DD
= 10 V
V
DD
= 8 V
oss
V
= 12 V
DD
100
C
rss
f = 1 MHz
V
GS
= 0 V
50
0.1
0
10
, Drain to Source Voltage (V)
DS
20
1
2
4
6
8
10
12
Q , Gate Charge (nC)
g
V
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs. Drain to Source
Voltage
−2
−3
40
10
10
V
GS
= 0 V
10
10
−4
0.1 ms
1 ms
10 ms
1
0.1
T = 125°C
J
−5
−6
−7
−8
10
10
10
10
THIS AREA IS
LIMITED BY R
100 ms
DS(on)
T = 25°C
J
1 s
10 s
DC
SINGLE PULSE
T = MAX RATED
J
R
= 145°C/W
q
JA
T = 25°C
A
0.01
0.1
0
12
15
10
, Drain to Source Voltage (V)
3
6
9
1
50
V
GS
, Gate to Source Voltage (V)
V
DS
Figure 9. Gate Leakage Current vs. Gate to
Source Voltage
Figure 10. Forward Bias Safe Operating Area
50
V
GS
= 4.5 V
SINGLE PULSE
R
= 145°C/W
q
JA
T = 25°C
A
10
1
0.5
10
−3
−2
−1
0
1
10
10
10
t, Pulse Width (s)
10
100
1000
Figure 11. Single Pulse Maximum Power Dissipation
www.onsemi.com
5
FDMA410NZ
TYPICAL CHARACTERISTICS (continued)
(T = 25°C unless otherwise noted)
J
2
1
DUTY CYCLE−DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
P
DM
0.1
t
1
t
2
SINGLE PULSE
NOTES:
DUTY FACTOR: D = t / t
R
= 145°C/W
q
JA
1
2
PEAK T = P
× Z
× R
+ T
JA A
q
q
J
DM
JA
0.01
−3
−2
−1
0
1
10
10
10
10
10
100
1000
t, Rectangular Pulse Duration (s)
Figure 12. Junction−to−Ambient Transient Thermal Response Curve
POWERTRENCH is a registered trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United
States and/or other countries.
MicroFET is a trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other
countries.
www.onsemi.com
6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
WDFN6 2x2, 0.65P
CASE 511CZ
ISSUE O
DATE 31 JUL 2016
1.70
1.00
0.05
C
2.0
A
(0.20)
No Traces
2X
B
allowed in
this Area
4
6
2.0
1.05
2.30
0.47(6X)
0.05
C
PIN#1 IDENT
TOP VIEW
2X
1
3
0.40(6X)
0.65
0.75 0.05
RECOMMENDED
LAND PATTERN OPT 1
0.10
C
0.20 0.05
1.70
0.45
(0.20)
1.00
0.08
C
SIDE VIEW
C
0.025 0.025
4
6
SEATING
PLANE
2.00 0.05
(0.15)
0.90 0.05
PIN #1 IDENT
1.05
0.66
(0.50)
0.30 0.05
2.30
(0.20)4X
0.47(6X)
1
3
0.28 0.05
(6X)
1
3
0.56 0.05
1.00 0.05
0.40(7X)
0.65
RECOMMENDED
LAND PATTERN OPT 2
2.00 0.05
(6X)
(0.50)
NOTES:
6
4
A. PACKAGE DOES NOT FULLY CONFORM
0.30 0.05
0.10
TO JEDEC MO−229 REGISTRATION
0.65
C
C
A
B
B. DIMENSIONS ARE IN MILLIMETERS.
1.30
0.05
C. DIMENSIONS AND TOLERANCES PER
ASME Y14.5M, 2009.
BOTTOM VIEW
D. LAND PATTERN RECOMMENDATION IS
EXISTING INDUSTRY LAND PATTERN.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13614G
WDFN6 2X2, 0.65P
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
ADDITIONAL INFORMATION
TECHNICAL PUBLICATIONS:
Technical Library: www.onsemi.com/design/resources/technical−documentation
onsemi Website: www.onsemi.com
ONLINE SUPPORT: www.onsemi.com/support
For additional information, please contact your local Sales Representative at
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