FDMA420NZ [ONSEMI]
N 沟道，PowerTrench® MOSFET，2.5V 指定，20V，5.7A，30mΩ;
| 型号： | FDMA420NZ |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道，PowerTrench® MOSFET，2.5V 指定，20V，5.7A，30mΩ |
| 文件： | 总7页 (文件大小：147K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
MOSFET – Single,
N-Channel, 2.5 V, Specified,
POWERTRENCH)
V
R
MAX
I MAX
D
DSS
DS(on)
20 V
30 mW @ 4.5 V
40 mW @ 2.5 V
5.7 A
20 V, 5.7 A, 30 mW
Pin 1
D
D
G
Source
FDMA420NZ
Drain
General Description
This Single N−Channel MOSFET has been designed using
onsemi’s advanced POWERTRENCH process to optimize the R
DS(on)
@ V = 2.5 V on special MicroFETt leadframe.
GS
D
D
S
Features
Bottom View
• R
• R
= 30 mW @ V = 4.5 V, I = 5.7 A
GS D
DS(on)
DS(on)
WDFN6 2x2, 0.65P
(MicroFET 2x2)
CASE 511CZ
= 40 mW @ V = 2.5 V, I = 5.0 A
GS
D
• Low Profile − 0.8 mm Maximum−in the New Package MicroFET
2x2 mm
• HBM ESD Protection Level > 2.5 kV Typical (Note 3)
MARKING DIAGRAM
• Free from Halogenated Compounds and Antimony Oxides
• This Device is Pb−Free, Halide Free and is RoHS Compliant
&Z&2&K
420
Applications
• Li−lon Battery Pack
&Z = Assembly Plant Code
&2 = 2−Digit Date Code
&K = 2−Digits Lot Run Traceability Code
420 = Specific Device Code
MOSFET MAXIMUM RATINGS (T = 25°C, unless otherwise noted)
A
Symbol
Parameter
Drain−Source Voltage
Ratings
20
Unit
V
V
DSS
GSS
V
Gate−Source Voltage
12
V
PIN ASSIGNMENT
I
D
Drain Current
A
− Continuous (Note 1a)
− Pulsed
5.7
24
S
D
D
4
5
6
3
2
1
G
D
D
P
Power Dissipation (Steady State)
(Note 1a)
(Note 1b)
W
D
2.4
0.9
T , T
Operating and Storage Junction
Temperature Range
−55 to +150
°C
J
STG
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
Bottom Drain Contact
THERMAL CHARACTERISTICS (T = 25°C, unless otherwise noted)
A
Symbol
Parameter
Ratings
Unit
ORDERING INFORMATION
See detailed ordering and shipping information on page 5 of
this data sheet.
R
Thermal Resistance, Junction to Ambient
(Note 1a)
52
°C/W
q
q
JA
R
Thermal Resistance, Junction to Ambient
(Note 1b)
145
JA
© Semiconductor Components Industries, LLC, 2009
1
Publication Order Number:
April, 2023 − Rev. 2
FDMA420NZ/D
FDMA420NZ
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Symbol
Parameter
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
B
Drain−Source Breakdown Voltage
V
I
= 0 V, I = 250 mA
20
−
−
−
−
V
VDSS
GS
D
Breakdown Voltage Temperature
Coefficient
= 250 mA, Referenced to 25°C
12
mV/°C
DBVDSS
DTJ
D
I
Zero Gate Voltage Drain Current
Gate−Body Leakage
V
V
= 16 V, V = 0 V
−
−
−
−
1
mA
mA
DSS
GSS
DS
GS
I
=
12V, V = 0 V
10
GS
DS
ON CHARACTERISTICS
V
Gate Threshold Voltage
V
I
= V , I = 250 mA
0.6
−
0.83
−3.1
1.5
−
V
GS(th)
DS
GS D
Gate Threshold Voltage Temperature
Coefficient
= 250 mA, Referenced to 25°C
mV/°C
DVGS(th)
DTJ
D
R
Static Drain−Source On−Resistance
V
GS
V
GS
V
GS
V
GS
V
GS
V
DS
= 4.5 V, I = 5.7 A
−
−
−
−
−
−
16.8
17.3
18.9
21.2
24.8
28.3
30
31
33
40
44
−
mW
DS(ON)
D
= 4.0 V, I = 5.7 A
D
= 3.1 V, I = 5.0 A
D
= 2.5 V, I = 5.0 A
D
= 4.5 V, I = 5.7 A, T = 150°C
D
J
g
FS
Forward Transconductance
= 5 V, I = 5.7 A
S
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
= 10 V, V = 0 V, f = 1.0 MHz
−
−
−
−
701
163
125
1.92
935
220
190
−
pF
pF
pF
W
iss
DS
GS
C
oss
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
C
rss
R
f = 1.0 MHz
G
SWITCHING CHARACTERISTICS
t
Turn−On Delay Time
Turn−On Rise Time
Turn−Off Delay Time
Turn−Off Fall Time
Total Gate Charge
Gate−Source Charge
Gate−Drain Charge
V
R
= 10 V, I = 1 A V = 4.5 V,
−
−
−
−
−
−
−
9.8
8.6
21.5
8.6
8.8
0.9
2.4
20
18
43
18
12
2
ns
ns
d(on)
DD
D
GS
= 6 W
GEN
t
r
t
ns
d(off)
t
f
ns
Q
g
V
DS
= 10 V, I = 5.7 A, V = 4.5 V
nC
nC
nC
D
GS
Q
gs
gd
Q
4
DRAIN−SOURCE CHARACTERISTICS
Maximum Continuous Drain−Source Diode Forward Current
I
S
−
−
−
−
−
0.69
−
2.0
1.2
20
5
A
V
V
SD
Drain−Source Diode Forward Voltage
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
V = 0 V, I = 2.0 A
GS S
t
rr
I = 5.7 A, di/dt = 100 A/ms
F
ns
nC
Q
rr
−
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. R
is the sum of the junction−to−case and case−to−ambient thermal resistance where the case thermal reference is defined as the solder
q
JA
mounting surface of the drain pins.
a. 52°C/W when mounted on a
b. 145°C/W when mounted on a
minimum pad of 2 oz copper
2
1 in pad of 2 oz copper
2. Pulse Test: Pulse Width < 300 ms, Duty cycle < 2.0%.
3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
www.onsemi.com
2
FDMA420NZ
TYPICAL CHARACTERISTICS (T = 25°C, unless otherwise noted)
J
50
45
40
35
30
25
20
15
10
5
2.1
PULSE DURATION = 300 ms
DUTY CYCLE = 2.0% MAX
PULSE DURATION = 300 ms
DUTY CYCLE = 2.0% MAX
1.8
1.5
1.2
0.9
V
GS
= 2.5 V
V
GS
= 2.0 V
V
= 4.5 V
GS
V
GS
= 3.5 V
= 3.0 V
V
GS
= 2.5 V
V
GS
= 3.0 V
V
GS
V
GS
= 3.5 V
V
V
= 2.0 V
= 1.5 V
GS
GS
V
GS
= 4.5 V
0
0
1
2
3
4
10
20
30
40
50
V
DS
, DRAIN−SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 1. On Region Characteristics
Figure 2. On−Resistance vs. Drain Current and
Gate Voltage
1.6
1.4
1.2
1.0
0.8
0.6
60
I
V
= 5.7 A
= 4.5 V
PULSE DURATION = 300 ms
D
DUTY CYCLE = 2.0% MAX
50
GS
I
D
= 2.8 A
40
30
20
10
T = 125°C
J
T = 25°C
J
−80
−40
0
40
80
120
160
1
2
3
4
5
T , JUNCTION TEMPERATURE (°C)
J
V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On Resistance vs.
Junction Temperature
Figure 4. On−Resistance vs. Gate to Source Voltage
30
25
20
15
10
5
100
PULSE DURATION = 300 ms
DUTY CYCLE = 2.0% MAX
V
GS
= 0 V
10
1
V
DS
= 5 V
T = 125°C
J
0.1
T = 125°C
J
T = 25°C
J
T = 25°C
J
0.01
1E−3
1E−4
T = −55°C
J
T = −55°C
J
0
0.5
1.0
1.5
2.0
2.5
0.2
0.4
0.6
0.8
1.0
1.2
1.4
V
GS
, GATE TO SOURCE VOLTAGE (V)
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode Forward Voltage vs.
Source Current
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3
FDMA420NZ
TYPICAL CHARACTERISTICS (T = 25°C, unless otherwise noted) (continued)
J
5
4
3
2
1
0
2000
V
= 15 V
C
DS
iss
1000
V
= 20 V
DS
C
oss
V
= 25 V
DS
C
rss
100
50
f = 1 MHz
= 0 V
V
GS
0
2
4
6
8
10
12
0.1
1
10
30
Q , GATE CHARGE (nC)
g
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs. Drain to Source Voltage
100
10
6
V
GS
= 4.5 V
10 ms
5
4
3
2
1
0
100 ms
1 ms
1
V
GS
= 2.5 V
OPERATION IN THIS
AREA MAY BE
10 ms
100 ms
1 s
10 s
DC
LIMITED BY R
0.1
0.01
DS(ON)
SINGLE PULSE
T = MAX RATED
T = 25°C
J
A
0.1
1
10
50
25
50
75
100
125
150
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
T , AMBIENT TEMPERATURE(°C)
A
Figure 9. Forward Bias Safe Operating Area
Figure 10. Maximum Continuous Drain Current vs.
Ambient Temperature
200
V
GS
= 10 V
T = 25°C
FOR TEMPERATURES
A
100
ABOVE 25°C DERATE PEAK
CURRENT AS FOLLOWS:
150 * TA
Ǹ
I + I25ƪ ƫ
125
10
SINGLE PULSE
1
0.5
10−4
10−3
10−2
10−1
100
101
102
103
t, PULSE WIDTH (s)
Figure 11. Single Pulse Maximum Power Dissipation
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4
FDMA420NZ
TYPICAL CHARACTERISTICS (T = 25°C, unless otherwise noted) (continued)
J
2
1
DUTY CYCLE−DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
P
DM
0.1
t
1
t
2
NOTES:
DUTY FACTOR: D = t / t
1
2
SINGLE PULSE
PEAK T = P
x Z
x R
+ T
JA A
q
q
J
DM
JA
R
= 145°C
q
JA
0.01
10−4
10−3
10−2
10−1
100
101
102
103
t, RECTANGULAR PULSE DURATION (s)
Figure 12. Transient Thermal Response Curve
PACKAGE MARKING AND ORDERING INFORMATION
†
Device
Device Marking
Package
Reel Size
Tape Width
Shipping
FDMA420NZ
420
WDFN6 2x2, 0.65P
(MicroFET 2x2)
7”
8 mm
3000 / Tape & Reel
(Pb−Free, Halide Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
POWERTRENCH is registered trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States
and/or other countries.
MicroFET is trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other
countries.
www.onsemi.com
5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
WDFN6 2x2, 0.65P
CASE 511CZ
ISSUE O
DATE 31 JUL 2016
1.70
1.00
0.05
C
2.0
A
(0.20)
No Traces
2X
B
allowed in
this Area
4
6
2.0
1.05
2.30
0.47(6X)
0.05
C
PIN#1 IDENT
TOP VIEW
2X
1
3
0.40(6X)
0.65
0.75 0.05
RECOMMENDED
LAND PATTERN OPT 1
0.10
C
0.20 0.05
1.70
0.45
(0.20)
1.00
0.08
C
SIDE VIEW
C
0.025 0.025
4
6
SEATING
PLANE
2.00 0.05
(0.15)
0.90 0.05
PIN #1 IDENT
1.05
0.66
(0.50)
0.30 0.05
2.30
(0.20)4X
0.47(6X)
1
3
0.28 0.05
(6X)
1
3
0.56 0.05
1.00 0.05
0.40(7X)
0.65
RECOMMENDED
LAND PATTERN OPT 2
2.00 0.05
(6X)
(0.50)
NOTES:
6
4
A. PACKAGE DOES NOT FULLY CONFORM
0.30 0.05
0.10
TO JEDEC MO−229 REGISTRATION
0.65
C
C
A
B
B. DIMENSIONS ARE IN MILLIMETERS.
1.30
0.05
C. DIMENSIONS AND TOLERANCES PER
ASME Y14.5M, 2009.
BOTTOM VIEW
D. LAND PATTERN RECOMMENDATION IS
EXISTING INDUSTRY LAND PATTERN.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13614G
WDFN6 2X2, 0.65P
PAGE 1 OF 1
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