FDMA510PZ [ONSEMI]
单 P 沟道 PowerTrench® MOSFET -20V，-7.8A，30mΩ;
| 型号： | FDMA510PZ |
| 厂家： | 
ONSEMI |
| 描述： | 单 P 沟道 PowerTrench® MOSFET -20V，-7.8A，30mΩ |
| 文件： | 总7页 (文件大小：247K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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MOSFET – Single, P-Channel,
POWERTRENCH)
V
I
MAX
r
MAX
DS
D
DS(on)
−20 V
30 mW @ −4.5 V
−7.8 A
37 mW @ −2.5 V
50 mW @ −1.8 V
90 mW @ −1.5 V
-20 V, -7.8 A, 30 mW
FDMA510PZ
Pin 1
Drain
D
D
G
Source
General Description
This device is designed specifically for battery charge or load
switching in cellular handset and other ultraportable applications. It
features a MOSFET with low on−state resistance.
The MicroFET t 2x2 package offers exceptional thermal
performance for its physical size and is well suited to linear mode
applications.
D
D
S
Bottom
WDFN6 2x2, 0.65P
(MicroFET 2x2)
CASE 511CZ
Features
• Max R
• Max R
• Max R
• Max R
= 30 mW at V = −4.5 V, I = −7.8 A
GS D
DS(on)
DS(on)
DS(on)
DS(on)
= 37 mW at V = −2.5 V, I = −6.6 A
GS
D
= 50 mW at V = −1.8 V, I = −5.5 A
MARKING DIAGRAM
GS
D
= 90 mW at V = −1.5 V, I = −2.0 A
GS
D
• Low Profile − 0.8 mm Maximum in the New Package MicroFET
2x2 mm
&Z&2&K
510
• HBM ESD Protection Level > 3 kV Typical (Note 3)
• Free from Halogenated Compounds and Antimony Oxides
• This Device is Pb−Free, Halide Free and is RoHS Compliant
&Z = Assembly Plant Code
&2 = 2−Digit Date Code
&K = 2−Digits Lot Run Traceability Code
510 = Specific Device Code
MOSFET MAXIMUM RATINGS (T = 25°C, unless otherwise noted)
A
Symbol
Parameter
Drain to Source Voltage
Gate to Source Voltage
Ratings
Unit
V
PIN ASSIGNMENT
V
DS
GS
−20
Bottom Drain Contact
V
8
V
D
D
G
D
D
S
1
2
3
6
5
4
I
Drain Current
− Continuous
− Pulsed
A
D
(Note 1a)
−7.8
−24
P
Power Dissipation
Power Dissipation
(Note 1a)
(Note 1b)
2.4
0.9
W
D
T , T
Operating and Storage Junction
Temperature Range
−55 to +150
°C
J
STG
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
ORDERING INFORMATION
†
Shipping
Package
Device
FDMA510PZ
THERMAL CHARACTERISTICS (T = 25°C, unless otherwise noted)
WDFN8
MicroFET 2X2
(Pb−Free,
3000 /
Tape & Reel
A
Symbol
Parameter
Ratings
Unit
Halide Free)
Thermal Resistance, Junction to Ambient
(Note 1a)
52
°C/W
R
q
JA
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
R
Thermal Resistance, Junction to Ambient
(Note 1b)
145
q
JA
© Semiconductor Components Industries, LLC, 2017
1
Publication Order Number:
April, 2023 − Rev. 3
FDMA510PZ/D
FDMA510PZ
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Symbol
Parameter
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
BV
Drain to Source Breakdown Voltage
I
I
= −250 mA, V = 0 V
−20
−
−
−
V
DSS
D
GS
Breakdown Voltage Temperature
Coefficient
= −250 mA, referenced to 25°C
−
−13
mV/°C
DBVDSS
DTJ
D
I
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
V
V
= −16 V, V = 0 V
−
−
−
−
−1
mA
mA
DSS
GSS
DS
GS
I
=
8 V, V = 0 V
10
GS
DS
ON CHARACTERISTICS
V
Gate to Source Threshold Voltage
V
I
= V , I = −250 mA
−0.4
−0.7
−1.5
V
GS(th)
GS
DS D
Gate to Source Threshold Voltage
Temperature Coefficient
= −250 mA, referenced to 25°C
−
3
−
mV/°C
DVGS(th)
DTJ
D
RDS(on)
Static Drain to Source On Resistance
V
GS
V
GS
V
GS
V
GS
V
GS
V
DD
= −4.5 V, I = −7.8 A
−
−
−
−
−
−
27
34
46
60
36
26
30
37
50
90
40
−
mW
D
= −2.5 V, I = −6.6 A
D
= −1.8 V, I = −5.5 A
D
= −1.5 V, I = −2.0 A
D
= −4.5 V, I = −7.8 A ,T = 125°C
D
J
gFS
Forward Transconductance
= −5 V, I = −7.8 A
S
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
= −10 V, V = 0 V,
−
−
−
1110
205
185
1480
275
pF
pF
pF
iss
DS
GS
f = 1 MHz
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
280
SWITCHING CHARACTERISTICS
t
Turn−On Delay Time
Rise Time
V
V
= −10 V, I = −7.8 A,
−
−
−
−
−
−
−
7
9
14
18
200
103
27
−
ns
ns
d(on)
DD
GS
D
= −4.5 V, R
= 6 W
GEN
t
r
t
Turn−Off Delay Time
Fall Time
125
64
19
2.1
4.2
ns
d(off)
t
f
ns
Q
g
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
V
DD
V
GS
= −5 V, I = −7.8 A,
nC
nC
nC
D
= −4.5 V
Q
gs
gd
Q
−
DRAIN−SOURCE CHARACTERISTICS
IS
VSD
trr
Maximum Continuous Drain−Source Diode Forward Current
−
−
−
−
−
−0.8
66
−2
−1.2
106
71
A
V
Source to Drain Diode Forward Voltage
Reverse Recovery Time
V
= 0 V, I = −2 A
GS S
I = −7.8 A, di/dt = 100 A / μs
F
ns
nC
Qrr
Reverse Recovery Charge
44
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2
1. R
is determined with the device mounted on a 1 in pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR−4 material. R
is guaranteed
JC
q
q
JA
by design while R
is determined by the user’s board design.
q
JA
a. 52°C/W when mounted on a
b. 145°C/W when mounted on a
minimum pad of 2 oz copper
2
1 in pad of 2 oz copper
2. Pulse Test: Pulse Width < 300 ms, Duty cycle < 2.0%.
3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
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2
FDMA510PZ
TYPICAL CHARACTERISTICS (T = 25°C, unless otherwise noted)
J
24
20
16
12
8
2.5
V
GS
= −4.5 V
V
= −1.5 V
V
= −1.8 V
GS
GS
V
= −1.8 V
GS
2.0
1.5
1.0
0.5
V
= −2.5 V
GS
V
= −2 V
GS
V
= −2 V
GS
V
= −2.5 V
GS
V
GS
= −1.5 V
V
GS
= −4.5 V
4
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
0
0
1
2
3
4
0
4
8
12
16
20
24
−V , DRAIN TO SOURCE VOLTAGE (V)
DS
−I , DRAIN CURRENT (A)
D
Figure 1. On−Region Characteristics
Figure 2. Normalized On−Resistance vs.
Drain Current and Gate Voltage
1.6
200
150
100
50
I
= −7.8 A
= −4.5 V
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
D
V
GS
1.4
1.2
1.0
0.8
0.6
I
D
= −7.8 A
T = 125°C
J
T = 25°C
J
0
−75 −50 −25
0
25
50
75 100 125 150
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
T , JUNCTION TEMPERATURE (°C)
J
−V , GATE TO SOURCE VOLTAGE (V)
GS
Figure 3. Normalized On−Resistance vs.
Figure 4. On−Resistance vs. Gate to Source
Junction Temperature
Voltage
24
20
10
1
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
V
GS
= 0 V
V
DS
= −5 V
16
12
0.1
T = 150°C
J
8
4
0
T = 25°C
J
T = −55°C
J
0.01
1E−3
T = 25°C
T = 150°C
J
T = −55°C
J
J
0.6
0.0
0.5
1.0
1.5
2.0
2.5
0.0
0.2
0.4
0.8
1.0
1.2
−V , GATE TO SOURCE VOLTAGE (V)
GS
−V , BODY DIODE FORWARD VOLTAGE (V)
SD
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode Forward
Voltage vs. Source Current
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3
FDMA510PZ
TYPICAL CHARACTERISTICS (T = 25°C, unless otherwise noted) (continued)
J
4.5
3.0
1.5
0.0
3000
I
D
= −7.8 A
C
iss
V
= −3 V
DD
1000
C
oss
V
DD
= −5 V
V
= −7 V
DD
C
rss
f = 1 MHz
V
GS
= 0 V
100
0.1
0
5
10
15
20
1
10
20
Q , GATE CHARGE (nC)
g
−V , DRAIN TO SOURCE VOLTAGE (V)
DS
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs. Drain to
Source Voltage
10−1
10−2
10−3
10−4
10−5
10−6
10−7
10−8
10−9
10−10
30
10
V
= 0 V
DS
100 ms
1 ms
1
0.1
10 ms
100 ms
THIS AREA IS
LIMITED BY R
T = 125°C
J
DS(on)
1 s
10 s
DC
SINGLE PULSE
T = 25°C
J
T = MAX RATED
J
R
= 145°C/W
q
JA
T = 25°C
A
0.01
0
3
6
9
12
15
0.1
1
10
60
−V , GATE TO SOURCE VOLTAGE (V)
GS
−V , DRAIN TO SOURCE VOLTAGE (V)
DS
Figure 9. Gate Leakage Current vs.
Gate to Source Voltage
Figure 10. Forward Bias Safe Operating Area
400
100
SINGLE PULSE
R
= 145°C/W
q
JA
T = 25°C
A
V
GS
= − 4.5 V
10
1
0.5
102
10 3
0
10−4
10−3
10−2
10−1
10
101
t, PULSE WIDTH (s)
Figure 11. Single Pulse Maximum Power Dissipation
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4
FDMA510PZ
TYPICAL CHARACTERISTICS (T = 25°C, unless otherwise noted) (continued)
J
2
1
DUTY CYCLE−DESCENDING ORDER
D = 0.5
0.2
0.1
P
0.05
0.02
0.01
DM
0.1
t
1
t
2
0.01
NOTES:
DUTY FACTOR: D = t / t
SINGLE PULSE
1
2
PEAK T = P
x Z
x R
+ T
JA A
R
= 145°C/W
q
q
q
J
DM
JA
JA
1E−3
102
103
10−4
10−3
10−2
10−1
100
101
t, RECTANGULAR PULSE DURATION (s)
Figure 12. Transient Thermal Response Curve
POWERTRENCH is registered trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States
and/or other countries.
MicroFET is trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other
countries.
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5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
WDFN6 2x2, 0.65P
CASE 511CZ
ISSUE O
DATE 31 JUL 2016
1.70
1.00
0.05
C
2.0
A
(0.20)
No Traces
2X
B
allowed in
this Area
4
6
2.0
1.05
2.30
0.47(6X)
0.05
C
PIN#1 IDENT
TOP VIEW
2X
1
3
0.40(6X)
0.65
0.75 0.05
RECOMMENDED
LAND PATTERN OPT 1
0.10
C
0.20 0.05
1.70
0.45
(0.20)
1.00
0.08
C
SIDE VIEW
C
0.025 0.025
4
6
SEATING
PLANE
2.00 0.05
(0.15)
0.90 0.05
PIN #1 IDENT
1.05
0.66
(0.50)
0.30 0.05
2.30
(0.20)4X
0.47(6X)
1
3
0.28 0.05
(6X)
1
3
0.56 0.05
1.00 0.05
0.40(7X)
0.65
RECOMMENDED
LAND PATTERN OPT 2
2.00 0.05
(6X)
(0.50)
NOTES:
6
4
A. PACKAGE DOES NOT FULLY CONFORM
0.30 0.05
0.10
TO JEDEC MO−229 REGISTRATION
0.65
C
C
A
B
B. DIMENSIONS ARE IN MILLIMETERS.
1.30
0.05
C. DIMENSIONS AND TOLERANCES PER
ASME Y14.5M, 2009.
BOTTOM VIEW
D. LAND PATTERN RECOMMENDATION IS
EXISTING INDUSTRY LAND PATTERN.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13614G
WDFN6 2X2, 0.65P
PAGE 1 OF 1
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