FDMA7630 [ONSEMI]
N 沟道，PowerTrench® MOSFET，30V，11A，13mΩ;
| 型号： | FDMA7630 |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道，PowerTrench® MOSFET，30V，11A，13mΩ 开关 光电二极管 晶体管 |
| 文件： | 总7页 (文件大小：214K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
MOSFET – Single,
N-Channel, POWERTRENCH)
Pin 1
Drain
D G
D
D
Source
30 V, 11 A, 13 mW
D
S
FDMA7630
Description
MicroFET 2X2 (Bottom View)
This Device has been Designed To Provide Maximum Efficiency
and Thermal Performance for synchronous buck converters. The low
WDFN6 2X2, 0.65P
CASE 511CZ
R
DS(on)
and gate charge provide excellent switching
performance.
Bottom Drain Contact
Features
D
D
D
S
• Max R
• Max R
= 13 mꢀ at V = 10 V, I = 11 A
GS D
DS(on)
= 20 mꢀ at V = 4.5 V, I = 9 A
GS D
DS(on)
D
G
• Low Profile − 0.8 mm Maximum − in the New Package
MicroFET™ 2x2 mm
• Free from halogenated compounds and antimony oxides
• These Devices is Pb−Free, Halide Free and is RoHS Compliant
Typical Applications
• DC–DC Buck Converters
MARKING DIAGRAM
ABSOLUTE MAXIMUM RATINGS T = 25°C unless otherwise noted
&Z&2&K
630
A
Symbol
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Value
30
Unit
V
V
DSS
GSS
&Z
&2
&K
= Assembly Plant Code
= Date Code (Year & Week)
= Lot Traceability Code
V
20
V
I
D
A
− Continuous T = 25°C (Note 1a)
11
24
630 = Specific Device Code
A
− Pulsed
P
Power Dissipation T = 25°C (Note 1)
24
0.9
D
A
ORDERING INFORMATION
W
Power Dissipation T = 25°C (Note 1)
A
†
Device
FDMA7630
Shipping
3000 /
Tape & Reel
Package
T , T
J
Operating and Storage Junction
Temperature Range
−55 to +150
°C
stg
WDFN−6
(Pb−Free)
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2016
1
Publication Order Number:
March, 2023 − Rev 6
FDMA7630/D
FDMA7630
THERMAL CHARACTERISTICS
Symbol
Parameter
Value
52
Unit
°C/W
°C/W
R
R
Thermal Resistance, Junction to Ambient (Note 1a)
Thermal Resistance, Junction to Ambient (Note 1b)
θ
θ
JA
JA
145
ELECTRICAL CHARACTERISTICS T = 25°C unless otherwise noted
J
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
Off Characteristics
BV
Drain to Source Breakdown Voltage
I
I
= 250 ꢁ A, V = 0 V
30
−
−
−
V
DSS
D
GS
Breakdown Voltage Temperature
Coefficient
= 250 ꢁ A, Referenced to 25°C
−
15
mV/°C
ꢂ BVDSS
ꢂ TJ
D
−
−
−
−
ꢁ A
I
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
V
V
= 24 V, V = 0 V
1
DSS
GSS
DS
GS
nA
I
=+/−20 V, V = 0 V
100
GS
DS
On Characteristics
V
GS(th)
Gate to Source Threshold Voltage
V
GS
= V , I = 250 ꢁ A
1.0
2.0
3.0
V
DS D
Gate to Source Threshold Voltage
Temperature Coefficient
I = 250 ꢁA, Referenced to 25°C
D
−
−6
−
mV/°C
ꢂ VGS(th)
ꢂ TJ
R
Static Drain−Source On−Resistance
V
GS
V
GS
V
GS
= 10 V, I = 11 A
−
−
−
10
14
14
13
20
18
mꢀ
DS(on)
D
= 4.5 V, I = 9 A,
D
= 10 V, I = 11 A, T = 125°C
D
J
g
FS
Forward Transconductance
V
DS
= 5 V, I = 11 A
36
−
S
D
Dynamic Characteristics
C
Input Capacitance
V
DS
= 15 V, V = 0 V, f = 1.0 MHz
−
−
−
−
1020
315
35
1360
415
55
pF
pF
pF
ꢀ
iss
GS
C
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
oss
C
rss
−
R
1.7
g
Switching Characteristics (Note 2)
t
Turn−On Delay Time
Rise Time
V
V
= 15 V, I = 11 A,
−
−
−
−
−
8
3
15
10
34
10
22
ns
ns
ns
ns
nC
d(on)
DD
GS
D
= 10 V, R
= 6 Ω
GEN
t
r
t
Turn−Off Delay Time
Fall Time
19
3
d(off)
t
f
Q
Total Gate Charge
V
GS
V
DD
= 0 V to 10 V
16
g
= 15 V, I = 11 A
D
V
GS
V
DD
= 0 V to 4.5 V,
−
8
10
nC
= 15 V, I = 11 A
D
Q
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
V
D
= 15 V,
−
−
3.0
2.2
−
−
nC
nC
gs
DD
I
= 11 A
Q
gd
Drain−Source Diode Characteristics and Maximum Ratings
Maximum Continuous Drain–Source Diode Forward Current
I
S
−
−
−
−
−
0.8
21
6
2
A
V
V
Source to Drain Diode Forward Voltage
Reverse Recovery Time
V
= 0 V, I = 2 A (Note 2)
1.2
33
12
SD
GS
S
I = 11 A, di/dt = 100 A/ꢁ s
F
t
ns
nC
rr
Q
Reverse Recovery Charge
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
www.onsemi.com
2
FDMA7630
NOTES:
1. R
2
is determined with the device mounted on a 1 in pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR−4 material. R
is guaranteed
ꢃ
ꢃ
JC
JA
by design while R
is determined by the user’s board design.
ꢃ
CA
a. 52 °C/W when mounted
b. 145 °C/W when mounted
on a minimum pad of 2 oz copper.
2
on a 1 in pad of 2 oz copper.
2. Pulse Test: Pulse Width ≤ 300 ꢁ s, Duty Cycle ≤ 2.0%
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3
FDMA7630
TYPICAL CHARACTERISTICS
3.0
24
V
V
= 10 V
= 6 V
PULSE DURATION = 80 ꢁ s
DUTY CYCLE = 0.5% MAX
GS
V
GS
= 3.5 V
GS
20
16
12
8
2.5
2.0
1.5
1.0
0.5
V
V
= 4.5 V
= 4 V
GS
GS
V
= 3.5 V
GS
V
= 4 V
GS
V
= 4.5 V
= 10 V
GS
4
PULSE DURATION = 80 ꢁ s
DUTY CYCLE = 0.5% MAX
V
GS
V
= 6 V
GS
0
0
0.5
1.0 1.5
2.0
0
4
8
12
16
20
24
I , DRAIN CURRENT (A)
D
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 2. Normalized On−Resistance vs.
Figure 1. On−Region Characteristics
Drain Current and Gate Voltage
60
1.6
1.4
1.2
1.0
I
V
= 11 A
PULSE DURATION = 80 ꢁ s
DUTY CYCLE = 0.5% MAX
D
= 10 V
GS
50
40
30
20
10
0
I
D
= 11 A
T = 125°C
J
0.8
0.6
T = 25°C
J
−75 −50 −25
0
25
50
75 100 125 150
2
4
6
8
10
V
GS
, GATE TO SOURCE VOLTAGE (V)
T , JUNCTION TEMPERATURE (5C)
J
Figure 4. On−Resistance vs Gate to
Figure 3. Normalized On−Resistance vs
Source Voltage
Junction Temperature
24
10
24
PULSE DURATION = 80 ꢁ s
DUTY CYCLE = 0.5% MAX
V
GS
= 0 V
20
16
12
8
V
DS
= 5 V
T = 125°C
J
1
T = 125°C
J
T = 25°C
J
T = 25°C
J
0.1
T = −55°C
J
4
0
T = −55°C
J
0.01
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode Forward Voltage vs
Source Current
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4
FDMA7630
TYPICAL CHARACTERISTICS (CONTINUED)
3000
1000
10
8
I
D
= 11 A
C
ISS
V
DD
= 10 V
6
V
DD
= 15 V
C
OSS
4
100
10
V
DD
= 20 V
2
f = 1 MHz
= 0 V
C
RSS
V
GS
0
0
5
10
15
20
0.1
1
10
30
Q , GATE CHARGE (nC)
g
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs Drain to Source Voltage
50
10
1000
SINGLE PULSE
= 145°C/W
T = 25°C
A
R
ꢃ
JA
V
GS
= 10 V
100
10
1 ms
1
THIS AREA IS
LIMITED BY
10 ms
R
100 ms
DS(on)
SINGLE PULSE
0.1
1 s
10 s
DC
1
T = MAX RATED
J
ꢃ
R
= 145°C/W
JA
DERIVED FROM
TEST DATA
T = 25°C
A
0.01
0.01
0.1
10
−4
−3
−2
−1
0.1
1
10
100
10
10
10
1
10
100 1000
SINGLE PULSE TIME (s)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 9. Forward Bias Safe Operating
Area
Figure 10. Single Pulse Maximum
Power Dissipation
2
DUTY CYCLE−DESCENDING ORDER
1
D = 0.5
0.2
0.1
0.1
0.05
P
DM
0.02
0.01
t
1
0.01
t
2
SINGLE PULSE
NOTES:
R
= 145 °C/W
ꢃ
JA
DUTY FACTOR: D = t /t
1
2
x R
PEAK T = P
x Z
+ T
JA A
ꢃ
ꢃ
J
DM
JA
0.001
−4
−3
−2
−1
10
10
10
10
1
10
100
1000
t, RECTANGULAR PULSE DURATION (s)
Figure 11. Transient Thermal Response Curve
MicroFET is trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other
countries.
www.onsemi.com
5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
WDFN6 2x2, 0.65P
CASE 511CZ
ISSUE O
DATE 31 JUL 2016
1.70
1.00
0.05
C
2.0
A
(0.20)
No Traces
2X
B
allowed in
this Area
4
6
2.0
1.05
2.30
0.47(6X)
0.05
C
PIN#1 IDENT
TOP VIEW
2X
1
3
0.40(6X)
0.65
0.75 0.05
RECOMMENDED
LAND PATTERN OPT 1
0.10
C
0.20 0.05
1.70
0.45
(0.20)
1.00
0.08
C
SIDE VIEW
C
0.025 0.025
4
6
SEATING
PLANE
2.00 0.05
(0.15)
0.90 0.05
PIN #1 IDENT
1.05
0.66
(0.50)
0.30 0.05
2.30
(0.20)4X
0.47(6X)
1
3
0.28 0.05
(6X)
1
3
0.56 0.05
1.00 0.05
0.40(7X)
0.65
RECOMMENDED
LAND PATTERN OPT 2
2.00 0.05
(6X)
(0.50)
NOTES:
6
4
A. PACKAGE DOES NOT FULLY CONFORM
0.30 0.05
0.10
TO JEDEC MO−229 REGISTRATION
0.65
C
C
A
B
B. DIMENSIONS ARE IN MILLIMETERS.
1.30
0.05
C. DIMENSIONS AND TOLERANCES PER
ASME Y14.5M, 2009.
BOTTOM VIEW
D. LAND PATTERN RECOMMENDATION IS
EXISTING INDUSTRY LAND PATTERN.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13614G
WDFN6 2X2, 0.65P
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
ADDITIONAL INFORMATION
TECHNICAL PUBLICATIONS:
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For additional information, please contact your local Sales Representative at
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