FDMC007N08LCDC [ONSEMI]
N 沟道，屏蔽门极，PowerTrench® MOSFET，80V，64A，6.8mΩ;
| 型号： | FDMC007N08LCDC |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道，屏蔽门极，PowerTrench® MOSFET，80V，64A，6.8mΩ |
| 文件： | 总8页 (文件大小：456K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MOSFET - N‐Channel
Shielded Gate
POWERTRENCH)
80 V, 64 A, 6.8 mW
FDMC007N08LCDC
General Description
www.onsemi.com
This N-Channel MV MOSFET is produced using
ON Semiconductor’s advanced PowerTrench process that incorporates
Shielded Gate technology. This process has been optimized to
minimize on-state resistance and yet maintain superior switching
performance with best in class soft body diode.
V
R
MAX
I MAX
D
DS
DS(ON)
80 V
6.8 mW @ 10 V
22 A
11.1 mW @ 4.5 V
Features
• Shielded Gate MOSFET Technology
S (1, 2, 3)
• Max R
• Max R
= 6.8 mW at V = 10 V, I = 22 A
GS D
DS(on)
= 11.1 mW at V = 4.5 V, I = 18 A
DS(on)
GS
D
G (4)
• 5 V Drive Capable
• 50% Lower Q than Other MOSFET Suppliers
rr
• Lowers Switching Noise/EMI
• MSL1 Robust Package Design
• 100% UIL Tested
D (5, 6, 7, 8)
N-CHANNEL MOSFET
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Pin 1
Applications
• Primary DC−DC MOSFET
• Synchronous Rectifier in DC−DC and AC−DC
• Motor Drive
Top
Bottom
Dual Coolt 33
• Solar
(PQFN8)
CASE 483AY
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
A
MARKING DIAGRAM
Symbol
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current:
Value
80
Unit
V
G
S
S
S
V
DS
V
GS
20
V
I
D
A
Continuous, T = 25°C (Note 5)
64
41
15
339
C
Continuous, T = 100°C (Note 5)
C
Continuous, T = 25°C (Note 1a)
A
&Z&3&K
7N08LDC
Pulsed (Note 4)
E
AS
Single Pulse Avalanche Energy
(Note 3)
150
mJ
W
D
D
D
D
P
D
Power Dissipation:
&Z
&3
&K
= Assembly Plant Code
= Numeric Date Code
= Lot Code
T
A
= 25°C
57
3
C
T = 25°C (Note 1a)
7N08LDC
= Specific Device Code
T , T
Operating and Storage Junction
Temperature Range
−55 to +150
°C
J
STG
ORDERING INFORMATION
See detailed ordering and shipping information on page 6 of
this data sheet.
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
© Semiconductor Components Industries, LLC, 2017
1
Publication Order Number:
June, 2021 − Rev. 3
FDMC007N08LCDC/D
FDMC007N08LCDC
THERMAL CHARACTERISTICS
Symbol
Parameter
Value
2.2
Unit
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient (Note 1a)
°C/W
R
q
JC
JA
R
42
q
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Symbol
Parameter
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
BV
Drain to Source Breakdown Voltage
I
I
= 250 mA, V = 0 V
80
V
DSS
D
GS
DBV
Breakdown Voltage Temperature
Coefficient
= 250 mA, referenced to 25°C
67
mV/°C
DSS
D
/DT
J
DSS
GSS
I
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
V
V
= 64 V, V = 0 V
1
mA
DS
GS
I
=
20 V, V = 0 V
100
nA
GS
DS
ON CHARACTERISTICS
V
Gate to Source Threshold Voltage
V
I
= V , I = 130 mA
1.0
1.5
2.5
V
GS(th)
GS
DS
D
DV
/DT
Gate to Source Threshold Voltage
Temperature Coefficient
= 130 mA, referenced to 25°C
−5.2
mV/°C
GS(th)
J
D
R
Static Drain to Source On Resistance
Forward Transconductance
V
GS
V
GS
V
GS
V
DS
= 10 V, I = 22 A
5.1
7.3
9.5
80
6.8
11.1
12.5
mW
DS(on)
D
= 4.5 V, I = 18 A
D
= 10 V, I = 22 A, T = 125°C
D
J
g
FS
= 5 V, I = 22 A
S
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
DS
= 40 V, V = 0 V, f = 1 MHz
2195
521
25
3070
730
40
pF
pF
pF
W
iss
GS
C
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
oss
C
rss
R
0.1
0.5
0.9
g
SWITCHING CHARACTERISTICS
t
Turn-On Delay Time
Rise Time
V
= 40 V, I = 22 A, V = 10 V,
GEN
11
3
21
10
58
10
44
ns
ns
ns
ns
nC
d(on)
DD
D
GS
R
= 6 W
t
r
t
Turn-Off Delay Time
Fall Time
36
4
d(off)
t
f
Q
Total Gate Charge
V
= 0 V to 10 V, V = 40 V,
31
g
GS
DD
I
= 22 A
D
V
D
= 0 V to 4.5 V, V = 40 V,
15
21
nC
GS
DD
I
= 22 A
Q
Gate to Source Charge
Gate to Drain “Miller” Charge
Output Charge
V
DD
V
DD
V
DD
V
DS
= 40 V, I = 22 A
5
4
nC
nC
nC
nC
gs
D
Q
= 40 V, I = 22 A
D
gd
Q
= 40 V, V = 0 V
29
28
oss
GS
Q
Total Gate Charge Sync
= 0 V, I = 22 A
D
sync
DRAIN-SOURCE DIODE CHARACTERISTICS
V
Source to Drain Diode Forward Voltage
V
V
= 0 V, I = 2.5 A (Note 2)
0.7
0.8
18
1.2
1.3
32
V
SD
GS
S
= 0 V, I = 22 A (Note 2)
GS
S
t
Reverse Recovery Time
I = 11 A, di/dt = 300 A/ms
F
ns
rr
Q
Reverse Recovery Charge
24
38
nC
rr
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2
FDMC007N08LCDC
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (continued)
J
Symbol
Parameter
Test Condition
Min
Typ
Max
Unit
DRAIN-SOURCE DIODE CHARACTERISTICS
t
Reverse Recovery Time
I = 11 A, di/dt = 1000 A/ms
F
15
60
26
96
ns
rr
Q
Reverse Recovery Charge
nC
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
THERMAL CHARACTERISTICS
Symbol
Parameter
Thermal Resistance, Junction to Case (Top Source)
Thermal Resistance, Junction to Case (Bottom Source)
Thermal Resistance, Junction to Ambient (Note 1a)
Thermal Resistance, Junction to Ambient (Note 1b)
Thermal Resistance, Junction to Ambient (Note 1c)
Thermal Resistance, Junction to Ambient (Note 1d)
Thermal Resistance, Junction to Ambient (Note 1e)
Thermal Resistance, Junction to Ambient (Note 1f)
Thermal Resistance, Junction to Ambient (Note 1g)
Thermal Resistance, Junction to Ambient (Note 1h)
Thermal Resistance, Junction to Ambient (Note 1i)
Thermal Resistance, Junction to Ambient (Note 1j)
Thermal Resistance, Junction to Ambient (Note 1k)
Thermal Resistance, Junction to Ambient (Note 1l)
Value
6.0
2.2
42
Unit
R
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
q
JC
R
q
JC
R
q
JA
R
105
29
q
JA
R
q
JA
R
40
q
JA
R
19
q
JA
R
23
q
JA
R
30
q
JA
R
79
q
JA
R
17
q
JA
R
26
q
JA
R
12
q
JA
R
16
q
JA
NOTES:
1. R
is determined with the device mounted on a FR−4 board using a specified pad of 2 oz copper as shown below. R
is guaranteed by
q
q
JC
JA
design while R
is determined by the user’s board design.
q
CA
a) 42°C/W when mounted on
b) 105°C/W when mounted on
a minimum pad of 2 oz copper.
2
a 1 in pad of 2 oz copper.
2
c. Still air, 20.9 × 10.4 × 12.7 mm Aluminum Heat Sink, 1 in pad of 2 oz copper
d. Still air, 20.9 × 10.4 × 12.7 mm Aluminum Heat Sink, minimum pad of 2 oz copper
e. Still air, 45.2 × 41.4 × 11.7 mm Aavid Thermalloy Part # 10−L41B−11 Heat Sink, 1 in pad of 2 oz copper
f. Still air, 45.2 × 41.4 × 11.7 mm Aavid Thermalloy Part # 10−L41B−11 Heat Sink, minimum pad of 2 oz copper
g. 200FPM Airflow, No Heat Sink,1 in2 pad of 2 oz copper
2
h. 200FPM Airflow, No Heat Sink, minimum pad of 2 oz copper
i. 200FPM Airflow, 20.9 × 10.4 × 12.7 mm Aluminum Heat Sink, 1 in pad of 2 oz copper
2
j. 200FPM Airflow, 20.9 × 10.4 × 12.7 mm Aluminum Heat Sink, minimum pad of 2 oz copper
k. 200FPM Airflow, 45.2 × 41.4 × 11.7 mm Aavid Thermalloy Part # 10−L41B−11 Heat Sink, 1 in pad of 2 oz copper
2
l. 200FPM Airflow, 45.2 × 41.4 × 11.7 mm Aavid Thermalloy Part # 10−L41B−11 Heat Sink, minimum pad of 2 oz copper
2. Pulse Test: Pulse Width < 300 ms, Duty cycle < 2.0%.
3. E of 150 mJ is based on starting T = 25°C; L = 3 mH, I = 10 A, V = 80 V, V = 10 V. 100% test at L = 0.1 mH, I = 32 A.
AS
J
AS
DD
GS
AS
4. Pulsed Id please refer to Figure 11 SOA graph for more details.
5. Computed continuous current limited to Max Junction Temperature only, actual continuous current will be limited by thermal &
electro-mechanical application board design.
www.onsemi.com
3
FDMC007N08LCDC
TYPICAL CHARACTERISTICS
(T = 25°C unless otherwise noted)
J
200
150
100
50
5
4
3
2
1
V
GS = 10 V
VGS = 3 V
VGS = 3.5 V
VGS = 8 V
V
GS = 6 V
VGS = 4.5 V
V
GS = 4.5 V
VGS = 6 V
VGS = 3.5 V
VGS = 10 V
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
VGS = 8 V
VGS = 3 V
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
0
0
0
1
2
3
4
5
0
50
100
, DRAIN CURRENT (A)
ID
150
200
, DRAIN TO SOURCE VOLTAGE (V)
VDS
Figure 1. On Region Characteristics
Figure 2. Normalized On-Resistance vs. Drain
Current and Gate Voltage
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
100
PULSE DURATION = 80ms
DUTY CYCLE = 0.5% MAX
ID = 22 A
VGS = 10 V
80
ID = 22 A
60
40
20
0
TJ = 125 o
C
TJ = 25 o
C
−75 −50 −25
0
25 50 75 100 125 150
0
2
4
6
8
10
VGS, GATE TO SOURCE VOLTAGE (V)
TJ, JUNCTION TEMPERATURE (5C)
Figure 3. Normalized On-Resistance vs.
Junction Temperature
Figure 4. On-Resistance vs. Gate to Source
Voltage
200
160
120
80
200
VGS = 0 V
100
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
VDS = 5 V
10
TJ = 150 o
C
1
0.1
TJ = 25 oC
TJ = 150 o
C
TJ = −55oC
40
0.01
TJ = 25 o
TJ = −55oC
C
0
0.001
1
2
3
4
5
6
7
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VGS , GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode Forward
Voltage vs. Source Current
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4
FDMC007N08LCDC
TYPICAL CHARACTERISTICS
(T = 25°C unless otherwise noted)
J
10
8
10000
1000
100
ID = 22 A
Ciss
V
DD = 30 V
Coss
6
VDD = 40 V
4
Crss
VDD = 50 V
10
2
f = 1 MHz
V
GS = 0 V
0
1
0
5
10
15
20
25
30
0.1
1
10
80
VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs. Drain to Source Voltage
100
10
1
70
R
qJC = 2.2oC/W
56
42
28
14
0
VGS = 10 V
TJ = 25 oC
TJ = 100 o
C
VGS = 4.5 V
TJ = 125 o
C
0.001
0.01
0.1
1
10
100
25
50
75
100
125
150
tAV , TIME IN AVALANCHE (ms)
, CASE TEMPERATURE (5C)
TC
Figure 9. Unclamped Inductive
Switching Capability
Figure 10. Maximum Continuous Drain Current
vs. Case Temperature
500
100
100000
SINGLE PULSE
R
TC = 25 oC
qJC = 2.2 oC/W
10 ms
10000
1000
100
10
1
100 ms
THIS AREA IS
LIMITED BY r DS(on)
1 ms
SINGLE PULSE
10 ms
TJ = MAX RATED
100 ms/DC
0.1
R
qJC = 2.2 oC/W
CURVE BENT TO
MEASURED DATA
TC = 25 oC
0.01
10
10−5
10−4
10−3
t, PULSE WIDTH (sec)
10−2
10−1
1
0.1
1
10
100
500
VDS , DRAIN to SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe Operating Area
Figure 12. Single Pulse Maximum Power
Dissipation
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5
FDMC007N08LCDC
TYPICAL CHARACTERISTICS
(T = 25°C unless otherwise noted)
J
2
1
DUTY CYCLE−DESCENDING ORDER
D = 0.5
0.2
P
DM
0.1
0.01
0.1
0.05
0.02
0.01
t
1
t
2
NOTES:
Z
(t) = r(t) x R
o
qJC
qJC
SINGLE PULSE
R
= 2.2 C/W
qJC
Peak T = P
x Z (t) + T
J
DM
qJC C
Duty Cycle, D = t / t
1
2
0.001
10−5
10−4
10−3
10−2
10−1
1
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Junction-to-Case Transient Thermal Response Curve
ORDERING INFORMATION
Device
Marking
Package
Reel Size
Tape Width
Quantity
3000 Units
FDMC007N08LCDC
7N08LDC
Dual Coolt 33 (PQFN8)
13″
12 mm
(Pb-Free / Halogen Free)
POWERTRENCH and DUAL COOL are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United
States and/or other countries.
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6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
PQFN8 3.3X3.3, 0.65P
CASE 483AY
ISSUE A
DATE 08 SEP 2021
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13674G
PQFN8 3.3X3.3, 0.65P
PAGE 1 OF 1
onsemi and
are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves
the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
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