FDMC012N03 [ONSEMI]
N 沟道，PowerTrench® MOSFET，30 V，1.23 mΩ;
| 型号： | FDMC012N03 |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道，PowerTrench® MOSFET，30 V，1.23 mΩ 开关 脉冲 光电二极管 晶体管 |
| 文件： | 总8页 (文件大小：505K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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July 2015
FDMC012N03
N-Channel Power Trench® MOSFET
30 V, 1.23 mΩ
Features
General Description
Max rDS(on) = 1.23 mΩ at VGS = 10 V, ID = 35 A
Max rDS(on) = 1.46 mΩ at VGS = 4.5 V, ID = 32 A
High performance technology for extremely low rDS(on)
Termination is Lead-free
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced Power Trench® process that has
been especially tailored to minimize the on-state resistance and
yet maintain superior switching performance.
Application
RoHS Compliant
DC-DC Conversion
Pin 1
Pin 1
S
S
S
S
D
D
S
G
S
D
D
D
D
D
D
G
Top
Bottom
Power 33
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
Parameter
Ratings
30
Units
Drain to Source Voltage
Gate to Source Voltage
V
V
±12
Drain Current
-Continuous
TC = 25 °C
TC = 100 °C
TA = 25 °C
(Note 5)
(Note 5)
(Note 1a)
(Note 4)
(Note 3)
185
-Continuous
-Continuous
-Pulsed
117
ID
A
35
688
EAS
Single Pulse Avalanche Energy
Power Dissipation
337.5
64
mJ
W
TC = 25 °C
TA = 25 °C
PD
Power Dissipation
(Note 1a)
2.3
TJ, TSTG
Operating and Storage Junction Temperature Range
-55 to +150
°C
Thermal Characteristics
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
(Note 1)
1.95
53
°C/W
(Note 1a)
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
13 ’’
Tape Width
12 mm
Quantity
FDMC012N03
FDMC012N03
Power33
3000 units
©2015 Fairchild Semiconductor Corporation
FDMC012N03 Rev. 1.0
www.fairchildsemi.com
1
Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250 μA, VGS = 0 V
30
V
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient
I
D = 250 μA, referenced to 25 °C
21
mV/°C
IDSS
IGSS
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
VDS = 24 V, VGS = 0 V
VGS = ±12 V, VDS = 0 V
1
μA
±100
nA
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250 μA
0.8
1.3
2.0
V
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = 250 μA, referenced to 25 °C
-4.5
mV/°C
V
GS = 10 V, ID = 35 A
0.96
1.14
1.36
220
1.23
1.46
1.77
rDS(on)
gFS
Static Drain to Source On Resistance
Forward Transconductance
VGS = 4.5 V, ID = 32 A
mΩ
VGS = 10 V, ID = 35 A, TJ = 125 °C
VDD = 5 V, ID = 35A
S
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
5845
1440
94
8183
2016
132
1
pF
pF
pF
Ω
V
DS = 15 V, VGS = 0 V,
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
f = 1 MHz
0.1
0.5
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
16
5.5
43
29
11
ns
ns
VDD = 15 V, ID = 35 A,
VGS = 10 V, RGEN = 6 Ω
Turn-Off Delay Time
Fall Time
69
10
110
50
ns
4.5
78
ns
Qg(TOT)
Qg(TOT)
Qgs
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
VGS = 0 V to 10 V
nC
nC
nC
nC
VGS = 0 V to 4.5 V
35
VDD = 15 V,
ID = 35 A
11.5
6
Qgd
Drain-Source Diode Characteristics
V
GS = 0 V, IS = 35 A
(Note 2)
(Note 2)
0.8
0.7
45
1.3
1.2
80
V
V
VSD
Source to Drain Diode Forward Voltage
VGS = 0 V, IS = 2 A
trr
Reverse Recovery Time
ns
nC
IF = 35 A, di/dt = 100 A/μs
Qrr
Reverse Recovery Charge
27.5
45
Notes:
2
1. R
is determined with the device mounted on a 1 in pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
is determined by the user's board design.
θCA
θJA
53 °C/W when mounted on a
1 in pad of 2 oz copper
130 °C/W when mounted on
a minimum pad of 2 oz copper
2
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. E of 337.5 mJ is based on starting T = 25 °C, L = 3 mH, I = 15 A, V = 30 V, V = 10 V. 100% test at L = 0.1 mH, I = 47 A.
AS
J
AS
DD
GS
AS
4. Pulsed Id please refer to Fig.11 SOA curve for more details.
5. Computed continuous current limited to Max Junction Temperature only, actual continuous current will be limited by thermal & electro-mechanical application board design.
©2015 Fairchild Semiconductor Corporation
FDMC012N03 Rev. 1.0
www.fairchildsemi.com
2
Typical Characteristics TJ = 25 °C unless otherwise noted
5
4
3
2
1
0
150
VGS = 10 V
VGS = 2.5 V
VGS = 4.5 V
120
VGS = 3.5 V
90
VGS = 3 V
VGS = 3 V
VGS = 3.5 V
60
VGS = 2.5 V
30
VGS = 10 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
VGS = 4.5 V
0
0.0
0.2
0.4
0.6
0.8
1.0
0
30
60
90
120
150
VDS, DRAIN TO SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
Figure 1. On Region Characteristics
Figure2. N o r m a l i z e d O n - R e s i s ta n c e
vs Drain Current and Gate Voltage
8
1.6
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
ID = 35 A
VGS = 10 V
ID = 35 A
6
4
2
0
1.4
1.2
1.0
0.8
TJ = 125 o
C
TJ = 25 o
C
-75 -50 -25
0
25 50 75 100 125 150
1
2
3
4
5
6
7
8
9
10
TJ, JUNCTION TEMPERATURE (oC)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On Resistance
vs Junction Temperature
Figure4. On-Resistance vs Gate to
Source Voltage
150
150
100
VGS = 0 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
120
90
60
30
0
10
VDS = 5 V
TJ = 150 o
C
1
TJ = 150 o
C
TJ = 25 o
C
0.1
TJ = 25 o
C
0.01
0.001
TJ = -55 o
C
TJ = -55 o
C
0
1
2
3
4
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure6. Source to Drain Diode
Forward Voltage vs Source Current
©2015 Fairchild Semiconductor Corporation
FDMC012N03 Rev. 1.0
www.fairchildsemi.com
3
Typical Characteristics TJ = 25 °C unless otherwise noted
10
10000
1000
100
ID = 35 A
Ciss
8
VDD = 10 V
Coss
6
VDD = 15 V
4
VDD = 20 V
Crss
f = 1 MHz
GS = 0 V
2
0
V
10
0.1
0
16
32
48
64
80
1
10
30
VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics
Figure8. C a p a c i t a n c e v s D r a i n
to Source Voltage
200
160
120
80
100
10
1
VGS = 10 V
TJ = 25 o
C
VGS = 4.5 V
TJ = 100 o
C
TJ = 150 o
C
40
RθJC = 1.95 oC/W
0
25
0.001
0.01
0.1
1
10
100
1000
50
75
100
125
150
TC, CASE TEMPERATURE (oC)
tAV, TIME IN AVALANCHE (ms)
Figure9. U n c l a m p e d I n d u c t i v e
Switching Capability
Figure10. Maximum Continuous Drain
Current vs Case Temperature
10000
1000
100
10
SINGLE PULSE
RθJC = 1.95 oC/W
T
C = 25 oC
10 μs
1000
100
10
100 μs
THIS AREA IS
LIMITED BY rDS(on)
1 ms
10 ms
100 ms/DC
SINGLE PULSE
TJ = MAX RATED
RθJC = 1.95 oC/W
1
CURVE BENT TO
MEASURED DATA
T
C = 25 oC
0.1
10-5 10-4 10-3 10-2 10-1
t, PULSE WIDTH (sec)
1
10
0.1
1
10
100 200
100 1000
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe
Operating Area
Figure12. Single Pulse Maximum
Power Dissipation
©2015 Fairchild Semiconductor Corporation
FDMC012N03 Rev. 1.0
www.fairchildsemi.com
4
Typical Characteristics TJ = 25 °C unless otherwise noted
2
DUTY CYCLE-DESCENDING ORDER
1
P
DM
D = 0.5
0.2
0.1
0.1
t
1
0.05
0.02
0.01
t
2
NOTES:
(t) = r(t) x R
= 1.95 C/W
Peak T = P
Z
R
θJC
θJC
o
θJC
SINGLE PULSE
0.01
x Z (t) + T
J
DM
θJC C
Duty Cycle, D = t / t
1
2
0.005
10-5
10-4
10-3
10-2
10-1
1
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Junction-to-Case Transient Thermal Response Curve
©2015 Fairchild Semiconductor Corporation
FDMC012N03 Rev. 1.0
www.fairchildsemi.com
5
2.37 MIN
SYM
3.40
3.20
A
PKG
C
C
L
L
8
5
(0.45)
B
8
5
2.15 MIN
0.70 MIN
(0.40)
(0.65)
PKG
3.40
3.20
C
PKG
C
L
L
1
4
1
4
PIN 1
INDICATOR
0.42 MIN
(8X)
0.65
1.95
SEE
DETAIL A
LAND PATTERN
RECOMMENDATION
1.95
0.10 C A B
0.37
(8X)
0.27
0.65
0.50
0.30
1
4
C
PKG
L
2.05
1.85
NOTES: UNLESS OTHERWISE SPECIFIED
A) PACKAGE STANDARD REFERENCE:
JEDEC MO-240, ISSUE A, VAR. BA,
DATED OCTOBER 2002.
8
5
(0.34)
(0.33) TYP
(0.52 TYP)
(2.27)
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS DO NOT INCLUDE BURRS
OR MOLD FLASH. MOLD FLASH OR
BURRS DOES NOT EXCEED 0.10MM.
D) DIMENSIONING AND TOLERANCING PER
ASME Y14.5M-1994.
0.10 C
E) DRAWING FILE NAME: PQFN08HREV1
0.80
0.70
0.08 C
0.05
0.00
C
SEATING
PLANE
0.25
0.15
SCALE: 2X
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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